Accepted Manuscript

Title: Optimization and characterization of CuO thin films for

P-N junction diode application by JNSP technique

Author: P. Venkateswari P. Thirunavukkarasu M.

Ramamurthy M. Balaji J. Chandrasekaran

PII: S0030-4026(17)30434-5
DOI: http://dx.doi.org/doi:10.1016/j.ijleo.2017.04.039
Reference: IJLEO 59081

To appear in:

Received date: 16-11-2016

Revised date: 10-4-2017
Accepted date: 10-4-2017

Please cite this article as: P. Venkateswari, P. Thirunavukkarasu, M. Ramamurthy, M.

Balaji, J. Chandrasekaran, Optimization and characterization of CuO thin films for P-N
junction diode application by JNSP technique, Optik - International Journal for Light
and Electron Optics (2017), http://dx.doi.org/10.1016/j.ijleo.2017.04.039

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*Manuscript

Optimization and characterization of CuO thin films for P-N junction

1
2 diode application by JNSP technique
3
4
5 P. Venkateswaria,b, P. Thirunavukkarasua,*, M. Ramamurthyc, M. Balajic, J.
6
7 Chandrasekaranc
8 a
9 Department of Electronics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020,
10 Tamil Nadu, India
11

t
b
12 Department of Electronics and Communication, Rathnavel Subramaniam College of Arts and Science, Coimbatore

ip
13 641402, Tamil Nadu, India
14
15 c
Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641020, Tamil

cr
16
17 Nadu, India
18
Corresponding author: Ph: +91 8925556764

us
19
20 E-mail: iruarasu@yahoo.co.in
21
22 Abstract:
23
24
25
26
an
The present work illustrates the optimization of substrate temperature, mole
concentration and volume of the solution of copper oxide (CuO) thin films prepared by
27
jet nebulizer spray pyrolysis (JNSP) technique. Such prepared CuO films were optimized
M
28
29
30
and characterized by XRD, SEM, EDX, UV-vis and I-V. From XRD analysis the mole
31 concentration, volume level and substrate temperature of the prepared CuO films were
32
ed

33 fixed as 0.20M, 5 ml & 4500C respectively and optimized for P-N diode application. The
34
35 XRD pattern of the optimized CuO film reveals monoclinic structure. The surface
36
pt

37 morphological variations and elemental present were confirmed by SEM and EDX
38
39 analysis. The optical properties were recorded by UV-vis spectrum and the minimum
ce

40
band gap value is observed as 1.63 eV for 450°C substrate temperature. The maximum
41
42 conductivity value of the prepared CuO is recorded as 7.4 x 10-9 S/cm from I-V
43
44 characterization. Using J-V, the diode parameters of p-CuO/n-Si prepared at 450°C with
Ac

45
46 0.2 M and 5 ml were measured in dark and under illumination. The ideality factor (n) and
47
48 barrier height (b) values of p-CuO/n-Si diode are 6.2 and 0.80 eV in dark and 4.6 and
49
50 0.81 eV under illumination.
51
52 Keywords: CuO; Thin films; JNSP technique; P-N junction diode; ideality factor; barrier
53
54 height;
55
56 1. Introduction
57
58 In recent years, the transition metal oxides (TMOs) have attracted substantial interest
59
60 owing to their potential applications such as supercapacitors, sensors, solar cells,
61
62
63 1
64 Page 1 of 26
65
 photocatalysis and electrochromic devices [1-6]. Among them, copper oxide has two
1
2 stable forms of tenorite (CuO) with the band gap from 1.2 to 1.9 eV and cuprite (Cu 2O)
3
4 with the band gap from 2.0 to 2.2 eV [7,8]. Both CuO and Cu2O exhibit p-type
5
semiconducting nature owing to copper ion vacancies in the structure. The three main
6
7 advantages of copper oxide are (i) low cost and less toxicity, (ii) highly effective in
8
9 visible light and (iii) high absorption property for oxygen molecules [9-12].
10
11 Nowadays, the various methods are available to grow copper oxide thin films such as

t
12

ip
13 chemical deposition, sol-gel, spray pyrolysis, chemical vapour deposition, sputtering,
14
15 plasma evaporation and pulsed laser deposition [8, 13-18]. From those methods, spray

cr
16 pyrolysis is very simple, economical and a suitable method for large area coating for
17
18 many semiconducting thin films.

us
19
20
21 In this research work, CuO thin films were prepared using modified spray technique,
22
named jet nebulizer spray pyrolysis (JNSP) technique [19-21]. The prepared CuO films
23
24
25
26
an
were characterized by optical, structural and electrical properties. Finally, p-CuO/n-Si
junction diode parameters were observed using the current-voltage (I-V) measurements.
27
M
28 2. Experimental details
29
30 2.1. Preparation of CuO thin films
31
32 The precursor solution was prepared with different mole concentrations of 0.10, 0.15,
ed

33 0.20 and 0.25 M of copper (II) acetate monohydrate (C4H6CuO4. H2O) and deionized
34
35 water. CuO thin films were coated on well cleaned glass substrates (2 x 2 cm) under three
36
pt

37 conditions as follows (i) Initially, the CuO thin films were prepared by varying the
38
39 volume of spray solution (3, 4, 5 and 6 ml) with fixed 400°C substrate temperature and
ce

40
41 0.20 mole concentration for optimizing the volume level of the solution. (ii) Then by
42
43
varying the molarity (0.10, 0.15, 0.20 and 0.25 M) with fixed 400°C substrate
44 temperature and volume level as 5ml, the CuO films were prepared for optimizing the
Ac

45
46 mole concentration, (iii) Finally, CuO thin films were prepared by varying the substrate
47
48 temperatures (350, 400, 450 and 500°C) with optimized molarity as 0.2 M and volume
49
50 level as 5 ml and the temperature is optimized.
51
52 2.2. Fabrication of p-CuO/n-Si junction diode
53
54
Prior fabricating a diode, silicon (Si) wafer is cleaned well by piranha solution (3:1 of
55 H2SO4:H2O2) to remove impurities like organic residues, dust and grease. Next the native
56
57 oxides from the Si wafer is removed by H2O:HF (10:1) solution. 2.5 ml of precursor
58
59 solution with 0.20 M was coated on n-type Si wafer (1 x 1 cm) at 450°C substrate
60
61
62
63 2
64 Page 2 of 26
65
 temperature. Then the p-type CuO thin film coated on n-Si wafer, the silver (Ag) paste
1
2 was applied on the both surfaces of p-CuO/n-Si junction diode for better contacts. The
3
4 Ag applied diode is dried at ambient condition for about 6 hr. I-V measurements under
5
dark and light illumination (650 W halogen lamps) was taken using KEITHLEY 6517B
6
7 electrometer.
8
9 2.3. Characterization Technique
10
11 The X-ray diffractometer (XRD)(XPERT-PRO) with CuKα1 radiation of wavelength

t
12

ip
13 1.5406 Å at a generator setting of 30 mA and 40 KV in the 2θ range from 20 to 70° was
14
15 used to obtain the structure of the CuO thin films. The variations in surface morphology

cr
16 of the films were analyzed by the scanning electron microscope (JEOL/EOJSM-6390).
17
18 The presence of elements (Cu and O) was confirmed by the energy dispersive analysis

us
19
20 from X-ray spectroscopy (EDX) (BRUKER). The UV-visible spectrophotometer (Perkin
21
22 Elmer Lambda 35) showed the optical properties in the wavelength range from 300 to
23
24
25
26
an
900 nm. Dc electrical properties and diode characterizations of the CuO films and
p-CuO/n-Si junction diode was measured using Keithley Electrometer (6517-B).
27 3. Results and Discussion
M
28
29 3.1. Structural Studies
30
31 The uniform CuO thin films were prepared using (JNSP) technique by varying the
32
ed

33 volume of the spray solution; mole concentration and substrate temperature and their
34
35 crystalline natures were studied through XRD. By fixing the substrate temperature and
36
mole concentration as 400°C and 0.20 M, the volume of precursor solution was varied as
pt

37
38 3, 4, 5 and 6 ml and thin films of CuO were coated and their XRD patterns of various
39
ce

40 volume of solution from 3 to 6 ml were displayed in Fig. 1a, which depicts that the
41
42 crystallinity increases till 5 ml then decreases for 6 ml. The diffraction an angle (2θ in
43
44 degree) with corresponding hkl planes coincides with JCPDS values (Card no. 45-0937)
Ac

45
46 and indicates monoclinic structure.Fig. 1b shows the XRD pattern of CuO for different
47
48
mole concentrations 0.10, 0.15, 0.20 and 0.25 M with constant volume 5 ml and substrate
49 temperature 400°C. The intensity of the diffraction peaks increases with increasing mole
50
51 concentration from 0.10 to 0.20 M then it decreases for 0.25 M. The diffraction peaks
52
53 confirm the monoclinic structure.Fig. 1c elucidates the XRD pattern of CuO for different
54
55 substrate temperature from 350 to 500°C for fixed 0.20 M and 5 ml. The Fig. 1c reveals
56
57 that the crystallinity increases as increasing the substrate temperature till 450°C and then
58
decreases. It also confirms the monoclinic structure with preferred orientations of (002)
59
60 and (111) planes
61
62
63 3
64 Page 3 of 26
65
 The micro structural properties of crystallite size (D) and micro strain (ε) of CuO thin
1
2 films for the preferred orientation of (0 0 2) were calculated by the following relations (1,
3
4 2) [20, 21]
5
6
7
(1)
8
9
10 (2)
11

t
12 Where k is the shape factor (k=0.94), λ is the wavelength of the X-ray radiation, θ is

ip
13
14 diffraction angle and β is the full width at half maximum.
15

cr
16 The tables 1, 2 and 3, illustrates the maximum crystallite size and minimum microstrain
17 values as 41.37 nm and 0.8385 x 10-3 lines-2 m-4 (5 ml of volume), 46.63 nm and 0.7439 x
18

us
19 10-3 lines-2 m-4 (0.20 M concentration), and 48.18 nm and 0.7200 x 10-3 lines-2 m-4 (450°C
20
21 substrate temperature). Fig. 2a-c implies the variation of D and ε of CuO films for various
22
23 volumes of solution, mole concentrations and substrate temperatures. The results revealed
24
25
26
an
that the 5 ml of volume, 0.20 M of concentration and 450°C of substrate temperature

27
provide good crystalline nature in the present study of JNSP technique.
M
28 3.2. Morphological and Elemental Analysis
29
30 The surface morphological changes of CuO films for various volume of solution, mole
31
32 concentrations and substrate temperatures are shown in Fig. 3, 4 and 5.
ed

33
34 In Fig. 3a, the closely packed sub-microsized spherical shape grains were observed for 3
35
36 ml of volume. When the volume of the solution is increased, the large variations in
pt

37
38
surface with randomly oriented sub-micro sized grains were observed (Fig 3c-d).
39 Fig. 4a-d shows the surface morphology of different mole concentrations for CuO films.
ce

40
41 Fig. 4 shows the randomly oriented sub-micro sized morphological results, which is
42
43 similar to Fig. 3. The surface morphological images of CuO for different substrate
44
Ac

45 temperatures from 350 to 500°C are shown in Fig. 5a-d. Fig. 5a exposes the irregularly
46
47 arranged sub - microsized flake-like structure of CuO film at 350°C. Above 350°C
48
49
substrate temperature, the spherical shaped grains are observed with asymmetrical
50 arrangement (Fig. 5c-d).
51
52 Fig. 6a-d depicts the EDX results for elemental analysis at different substrate
53
54 temperatures from 350-500°C. The presence of elements of Cu and O is confirmed from
55
56 Fig. 6.
57
58 3.3. Optical Properties
59
60
61
62
63 4
64 Page 4 of 26
65
 Fig.7a illuminates the absorbance spectra of CuO films for different substrate
1
2 temperatures 350, 400, 450 and 500ºC between the wavelength range 300 - 900 nm. The
3
4 absorbance value is decreased up to 450ºC then increased in the visible region. The
5
variation of absorbance owes to increase in packing density and decrease in thickness of
6
7 the film which is due to shrinking of spray droplets [22].
8
9 Using UV-vis spectra, the band gap energy (Eg) for CuO films is calculated using
10
11 equation (3) [23],

t
12

ip
13 (3)
14
15 Where α is the absorption co-efficient, hυ is the photon energy, B is the constant and Eg is

cr
16
17 the band gap energy. Fig. 7b displays the variation of (hν)2 vs. (hν) plots for the CuO
18

us
19 films prepared at different substrate temperatures. The direct band gap energy values are
20
21 obtained by extrapolating the vertical straight line portion of the plot to the photon energy
22
23 axis (x-axis). The interception on photon energy axis gives the band gap energy values as
24
25
26
an
1.86, 1.81, 1.62 and 1.70 eV for different substrate temperatures 350, 400, 450 and

27
500ºC respectively. The minimum band gap energy 1.62 eV [24] is obtained for the
M
28 substrate temperature 450ºC. The difference in band gap energy is due to the change in
29
30 crystallinity of the films with temperature [25].
31
32 3.4. DC Electrical Properties
ed

33
34 I-V measurements of CuO thin films prepared for various volume of solution, mole
35
36 concentrations and substrate temperatures were taken at room temperature using Keithley
pt

37
electrometer through two probe. The current values were measured for different applied
38
39 voltages from 10 to 100 V (Fig. 8a, 9a and 10a).The dc conductivity () for CuO films
ce

40
41 was calculated using the given equation (4) [20,21],
42

43
44 (4)
Ac

45
46 where I is current, V is applied potential, d is inter-probe distance and A is cross-
47
48 sectional area of the film.
49
50 Fig. 8a shows the I-V characteristics of CuO films for different volume concentrations.
51
52
The obtained average conductivity values are 3.13 x 10-9, 3.44 x 10-9, 3.70 x 10-9 and 3.39
53 x 10-9 S/cm for volume of solution from 3 to 6 ml. The results revealed that the
54
55 conductivity value is increased up to 5 ml and decreases as shown in Fig. 8b. Fig. 9a
56
57 indicates the I-V characteristics for different mole concentrations. The average
58
59 conductivity values of CuO films obtained as 3.35 x 10-9, 3.72 x 10-9, 1.20 x 10-8 and 1.13
60
61
62
63 5
64 Page 5 of 26
65
 x 10-8 S/cm for different mole concentrations of 0.10, 0.15, 0.20 and 0.25 M. From the
1
2 Fig. 9b, the maximum conductivity is observed for 0.20 M. The I-V characterization for
3
4 different substrate temperatures is shown in Fig. 10a. By varying the substrate
5
temperatures from 350 to 500ºC, the observed average conductivity values of CuO films
6
7 are 2.98 x 10-11, 7.54 x 10-10, 7.36 x 10-9 and 1.63 x 10-9 S/cm. At the substrate
8
9 temperature of 450ºC, the maximum conductivity value is found as shown in Fig. 10b.
10
11 The variations in conductivity values may be attributed to the oxygen vacancies in the

t
12

ip
13 prepared CuO thin films [21,26-28]. The increasing of conductivity with the substrate
14
15 temperature owing to the variation in morphology and the increasing of grain size up to

cr
16 450ºC, which reduced the lattice dislocations and imperfections of the Cu–O matrix. This
17
18 phenomena decreases the grain boundary volume associated with flow of charge carriers

us
19
20 [29].
21
22 3.5. I-V characterization of p-CuO/n-Si junction diode
23
24
25
26
an
The junction formation of the P-N diode is carried out by the p-type CuO and n-type Si.
The P-N junction diode of p-CuO/n-Si was prepared based on the optimized results of
27 volume of solution (5 ml), mole concentration (0.20 M) and substrate temperature
M
28
29 (450ºC) by JNSP technique. The prepared p-CuO/n-Si junction diode parameters of
30
31 ideality factor (n) and barrier height (b) were measured under darkness and illumination
32
ed

33 of light (halogen + metal halide - 100 mW/cm2) [20]. The reverse to forward bias current
34
35 measurement is taken for the applied potential of -4 to +4 V. Fig. 11 shows the I-V
36
characteristics of p-CuO/n-Si junction diode under dark and illumination. Fig. 12
pt

37
38
39
illustrates the semi-log plot of the current density (ln J) vs voltage (V).From the Fig. 11,
ce

40 the p-CuO/n-Si junction diode exhibits a good rectifying nature in dark and under
41
42 illumination.
43
44 Using the thermionic emission (TE) equations, the current density of the p-CuO/n-Si
Ac

45
46 junction diode was calculated as follows (5) [21,30],
47
48 (5)
49
50
51 where Jo is reverse saturation current density, q is charge of electron, V is applied
52
53 potential, n is ideality factor, K is Boltzmann constant and T is absolute temperature.
54
55 Using equation (5) for V ≥ 3kT/q, n and Jo values were obtained from the slope and
56
57 interception of semi-log forward bias J-V plot. Thus, n and b were calculated by the
58
59
following equations (6,7) [21,30],
60
61
62
63 6
64 Page 6 of 26
65
 1
(6)
2
3
4  (7)
5
6
7 where A is the active area of prepared diode and A* is the Richardson constant. The n and
8
9 b values under darkness is obtained as 6.2 and 0.80 eV and under light illumination as
10
11
4.6 and 0.81 eV. The n value is unity (i.e., n = 1) for an ideal P-N diode but in the present

t
12 work, the n values are obtained as more than unity. The obtained result of n value is

ip
13
14 comparable to the reported value (3.5), for a reactive magnetron sputtering deposited
15

cr
16 Ag/p-CuO/n-Si Schottky diode [31]. The results suggest the non-ideal behavior of
17
18 prepared p-CuO/n-Si junction diode which may be owing to the presence of an interfacial

us
19
20 thin native oxide layer (SiO2) and barrier inhomogeneities [20,21,30]. It may also be
21
22
owing to series resistance and nonlinear metal-semiconductor contact [20,32]. Another
23
24
25
26
the interfacial charges [20,33].
an
reasons may be the abnormalities of the inorganic film thickness and non-uniformity of

27 4. Conclusion
M
28
29 The CuO thin films have been prepared by JNSP technique and the conditions for volume
30
31 of solution, mole concentrations and substrate temperatures were optimized. From the
32
ed

XRD results, it was observed that the prepared CuO film has monoclinic structure and
33
34 also has the maximum crystallite size as 41.37, 46.63 and 48.18 nm for 5 ml of volume,
35
36 0.20 M of molarity and 450 ºC of substrate temperature respectively. The surface
pt

37
38 morphological variations of sub-microsized grains of CuO were displayed by SEM
39
analysis for different volume, molarity and substrate temperatures and the presence of
ce

40
41
42 elements such as Cu and O were confirmed by EDX results. UU-vis for various substrate
43 temperatures was observed and it showed the minimum absorbance and minimum band
44
Ac

45 gap energy of 1.62 eV for the substrate temperature of 450ºC. The dc electrical
46
47 conductivity reveals that the 5 ml of volume, 0.20 M of molarity and 450ºC of substrate
48
49 temperature has maximum conductivity values. Based on the optimized volume (5ml),
50
51 molarity (0.20 M) and substrate temperature (450ºC), the p-CuO/n-Si junction diode was
52
53
prepared by JNSP technique. The diode parameter of ideality factor (n) values were
54 measured as 6.2 in darkness and under illumination as 4.6.The photoconduction nature of
55
56 the prepared p-CuO/n-Si junction diode will be endorsed for photo-detector application.
57
58
59
60
61
62
63 7
64 Page 7 of 26
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[25] D. Davazoglou, G. Leveque, A. Donnadieu, Study on the optical and
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7 electrochromic properties of polycrystalline WO3 thin films prepared by CVD, Sol.
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9 Energy Mater. 17 (1988) 379-390.
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11 [26] V. Nirupama, M. Chandrasekhar, P. Radhika, B. Sreedhar, S. uthanna,

t
12

ip
13 Characterization of molybdenum oxide films prepared by bias magnetron
14
15 sputtering, J. Optoelectron. Adv. Mater. 11 (2009) 320- 325.

cr
16 [27] V. Nirupama, M. Chandra Sekhar, T.K. Subramanyam, S. Uthanna, Structural and
17
18 electrical characterization of magnetron sputtered MoO3 thin films, J. Phys.: Conf.

us
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20 Ser. 208 (2010) 012101(1-6).
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22 [28] D.S. Sutrave, S.D. Gothe, Surface morphology and properties of molybdenum
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oxide thin films, DAMA Int. 2 (2015) 1-6. an
[29] M. Raja, J. Chandrasekaran, M. Balaji, B. Janarthanan, Impact of annealing
27 treatment on structural and dc electrical properties of spin coated tungsten trioxide
M
28
29 thin fi lms for Si/WO3/Ag junction diode, Mater. Sci. Semicond. Process. 56 (2016)
30
31 145-154.
32
ed

33 [30] M. Raja, J. Chandrasekaran, M. Balaji, Evaluation of microstructural and electrical

34
35 properties of WO3-x thin films for p-Si/n-WO3-x/Ag junction diodes, Optik 127
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(2016) 11009-11019.
pt

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38 [31] A. Tombak, M. Benhaliliba, Y.S. Ocak, T. Kilicoglu, The novel transparent
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ce

40 sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications,
41
42 Result. Phys. 5 (2015) 314-321.
43
44 [32] C.X. Wang, G.W. Yang, H.W. Liu, Y.H. Han, J.F. Luo, C.X. Gao, G.T. Zou,
Ac

45
46 Experimental analysis and theoretical model for anomalously high ideality factors
47
48
in ZnO/diamond p-n junction diode, Appl. Phys. Lett. 84 (2004) 2427-2429.
49 [33] R. Suresh, V. Ponnuswamy, R. Mariappan, Incorporation of Al3+ on the
50
51 rectification properties of ADC thin films, Ceram. Int. 41 (2015) 3081-3093.
52
53
54
55
56
57
58
59
60
61
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63 10
64 Page 10 of 26
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 FIGURE CAPTIONS
1
2 Fig. 1. XRD patterns fordifferent (a) voume concentrations, (b)mole concentrations and
3 (c) substrate temperatures.
4
5 Fig. 2. Microstructural properties of crytallite size and microstrain values fordifferent
6 (a) voume concentrations, (b)mole concentrations and (c) substrate temperatures.
7
8 Fig. 3 SEM images for different volume concentrations of (a) 3, (b) 4, (c) 5 and (d) 6
9 ml.
10
11 Fig. 4 SEM images for different mole concentrations of (a) 0.10, (b) 0.15, (c) 0.20 and

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12 (d) 0.25 M.

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13
14 Fig. 5 SEM images for different substrate temperaturesof (a) 350, (b) 400, (c) 450and
15 (d) 500°C.

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16
17
Fig. 6 EDX spectra for different substrate temperaturesof (a) 350, (b) 400, (c) 450 and
18 (d) 500°C.

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19
20
Fig. 7 (a) Absorbance spectra and (b) Band gap energy for different substrate
21 temperatures
22
23
Fig. 8 (a) I-V characterization and (b) Average conductivity for different volume
24
25
26
concentrations an
Fig. 9 (a) I-V characterization and (b) Average conductivity for different mole
27 concentrations
M
28 Fig. 10 (a) I-V characterization and (b) Average conductivity for different substrate
29
30 temperature
31 Fig. 11 I-V characterization for p-CuO/n-Si junction diode in darkness and under
32
ed

33 illumination
34 Fig. 12 Plots ln J vs. V for p-CuO/n-Si junction diode in darkness and under
35
36 illumination
pt

37
38
39 TABLE CAPTIONS
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40 Table 1 Microstructural properties for different volume concentrations

41
42 Table 2 Microstructural properties for different mole concentrations
43
44 Table 3 Microstructural properties for different substrate temperature
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46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63 11
64 Page 11 of 26
65
Figure

Figure 1

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Page 12 of 26
Figure 2

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Page 13 of 26
Figure 3

(a) (b)

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Page 14 of 26
Figure 4

(a) (b)

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Page 15 of 26
Figure 5

(a) (b)

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Figure 6

(a) (b)

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Figure 7

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Page 18 of 26
Figure 8

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Page 19 of 26
Figure 9

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Figure 10

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Figure 11

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Page 22 of 26
 Figure 12

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Page 23 of 26
Table

Table 1

Micro
Volume Crystallite
FWHM strain (ε)
variation size (D)
(Radians) (x 10-3 lines-2
(ml) nm
m-4)
3 0.0039 37.72 0.9197

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4 0.0038 38.73 0.8957

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5 0.0035 41.37 0.8385

6 0.0036 40.39 0.8589

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Page 24 of 26
Table 2
Micro
Molarity Crystallite
FWHM strain (ε)
Variation size (D)
(Radians) (x 10-3 lines-2
(M) nm
m-4)
0.10 0.0038 38.75 0.8949

t
0.15 0.0036 40.76 0.8508

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0.20 0.0031 46.63 0.7439

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0.25 0.0032 45.05 0.7700

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Page 25 of 26
Table 3
Micro
Substrate Crystallite
FWHM strain (ε)
Temperature size (D)
(Radians) (x 10-3 lines-2
(°C) nm
m-4)
350 0.0036 40.88 0.8485

t
400 0.0034 43.31 0.8010

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450 0.0030 48.18 0.7200

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500 0.0033 44.03 0.7878

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Page 26 of 26