BF 506

PNP Silicon RF Transistor BF 506

● For VHF mixer and oscillator stages

2
3
1

Type Marking Ordering Code Pin Configuration Package1)

1 2 3
BF 506 – Q62702-F534 C B E TO-92

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 35 V
Collector-base voltage VCB0 40
Emitter-base voltage VEB0 4
Collector current IC 30 mA
Base current IB 5
Total power dissipation, TA ≤ 45 ˚C Ptot 300 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 55 … + 150

Thermal Resistance
Junction - ambient Rth JA ≤ 350 K/W

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1
 BF 506

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC Characteristics
Collector-emitter breakdown voltage V(BR) CE0 35 – – V
IC = 2 mA
Collector-base breakdown voltage V(BR) CB0 40 – –
IC = 10 µA
Emitter-base breakdown voltage V(BR) EB0 4 – –
IE = 10 µA
Collector cutoff current ICB0 – – 100 nA
VCB = 20 V
DC current gain hFE 25 – – –
IC = 3 mA, VCE = 10 V

AC Characteristics
Transition frequency fT – 550 – MHz
IC = 2 mA, VCE = 10 V, f = 100 MHz
Collector-emitter capacitance Cce – 0.12 – V
VCB = 10 V, VBE = 0 V, f = 1 MHz
Noise figure F – 3 – dB
IC = 2 mA, VCB = 10 V, f = 200 MHz
RS = 60 Ω

Semiconductor Group 2