Beruflich Dokumente
Kultur Dokumente
improved ruggedness D
l Repetitive avalanche capability for robustness
and reliability
G
S TO-247AC
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 13 ––– from package
S
and center of die contact
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 220 mJ
EAR Repetitive Avalanche Energy c ––– 43 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 300 ––– V
IAS Avalanche Currentd ––– 42 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 60 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 240 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 42A, VGS = 0V e
trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 42A, VDD = 50V
Qrr Reverse Recovery Charge ––– 1230 1850 nC di/dt = 100A/µs e
2 www.irf.com
10 10
1000 4.0
3.0
100
(Normalized)
TJ = 175°C
2.0
TJ = 25°C
10
1.0
VDS = 30V
≤ 60µs PULSE WIDTH
1
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
1200 1000
L = 220nH L = 220nH
C = 0.4µF C = Variable
1000 800
100°C 100°C
Energy per pulse (µJ)
25°C
Energy per pulse (µJ)
25°C
800 600
600 400
400 200
200 0
150 160 170 180 190 200 160 170 180 190 200 210 220 230
VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Peak Drain Current
www.irf.com 3
TJ = 175°C
C= 0.2µF
1000
800 10.0
600
200
VGS = 0V
0
0.1
25 50 75 100 125 150
0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage
12000 20
VGS = 0V, f = 1 MHZ ID= 42A
Ciss = Cgs + Cgd, Cds SHORTED
8000
Ciss
12
6000
8
4000
4
2000
Coss
Crss 0
0
1 10 100 1000
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60 1000
OPERATION IN THIS AREA
54 LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
48
100
ID , Drain Current (A)
42 1µsec
36
10µsec
30 10
24 100µsec
18
1
12
Tc = 25°C
6 Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TC , CaseTemperature (°C) VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
4 www.irf.com
ID = 42A I D
TOP 12A
500 800 18A
BOTTOM 42A
400
TJ = 25°C
600
300
TJ = 125°C
400
200
200
100
0 0
4.0 6.0 8.0 10.0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)
Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.5 200
ton= 1µs
VGS(th) Gate threshold Voltage (V)
3.5
3.0 80
2.5
40
2.0
1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ , Temperature ( °C ) Case Temperature (°C)
Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20
0.10
0.05 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01 0.02 τJ τC 0.0091 0.000003
τJ τ
0.01 τ1 0.0487 0.000071
τ2 τ3 τ4
τ1 τ2 τ3 τ4 0.1264 0.001743
Ci= τi/Ri 0.1660 0.024564
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT Vgs(th)
0
1K
Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform
6 www.irf.com
Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms
RD VDS
V DS
90%
VGS
D.U.T.
RG
+
-V DD
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 % td(on) tr t d(off) tf
Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms
www.irf.com 7
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
8 www.irf.com
www.DatasheetCatalog.com