SEMICONDUCTOR KF10N60P/F

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description
KF10N60P

This planar stripe MOSFET has better characteristics, such as fast A

O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for active power factor
E G DIM MILLIMETERS
correction and switching mode power supplies. A _ 0.2
9.9 +
B
B 15.95 MAX
Q C 1.3+0.1/-0.05
FEATURES I D _ 0.1
0.8 +
E _ 0.2
3.6 +
VDSS=600V, ID=10A K _ 0.1
P F 2.8 +
Drain-Source ON Resistance : M G 3.7
L
H 0.5+0.1/-0.05
RDS(ON)(Max)=0.69 @VGS=10V J I 1.5
Qg(typ.)= 29.5nC D J 13.08 +_ 0.3
N N H K 1.46
L _ 0.1
1.4 +
MAXIMUM RATING (Tc=25 ) M _ 0.1
1.27 +
N _ 0.2
2.54 +
RATING O _ 0.2
4.5 +
CHARACTERISTIC SYMBOL UNIT 1 2 3 P 2.4 +_ 0.2
1. GATE
KF10N60P KF10N60F 2. DRAIN Q _ 0.2
9.2 +
3. SOURCE
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
TO-220AB
@TC=25 10 10*
ID
Drain Current @TC=100 6 6* A
KF10N60F
Pulsed (Note1) IDP 25 25*
A C
Single Pulsed Avalanche Energy EAS 400 mJ
(Note 2) F

O
Repetitive Avalanche Energy EAR 16.5 mJ
(Note 1) E DIM MILLIMETERS
B

A 10.16 +_ 0.2
Peak Diode Recovery dv/dt
G

dv/dt 4.5 V/ns B 15.87 +_ 0.2

(Note 3) C _ 0.2
2.54 +
Tc=25 190 50 W D _ 0.1
0.8 +
Drain Power
PD E _ 0.1
3.18 +
Dissipation
K

Derate above 25 1.52 0.4 W/ F _ 0.1

3.3 +
G 12.57 +_ 0.2
Tj L
Maximum Junction Temperature 150 M
R H _ 0.1
0.5 +
J

J 13.0 +_ 0.5
Storage Temperature Range Tstg -55 150 K _ 0.1
3.23 +
D
L 1.47 MAX
Thermal Characteristics
M 1.47 MAX
N N H
RthJC N _ 0.2
2.54 +
Thermal Resistance, Junction-to-Case 0.65 2.5 /W
O _ 0.2
6.68 +
Thermal Resistance, Q _ 0.2
4.7 +
RthJA 62.5 62.5 /W 1. GATE
R _ 0.2
2.76 +
Junction-to-Ambient 1 2 3 2. DRAIN
Q

3. SOURCE
* : Drain current limited by maximum junction temperature.

PIN CONNECTION
TO-220IS (1)
(KF10N60P, KF10N60F)
D

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 KF10N60P/F

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=5A - 0.59 0.69
Dynamic
Total Gate Charge Qg - 29.5 -
VDS=480V, ID=10A
Gate-Source Charge Qgs - 6.5 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 12.5 -
Turn-on Delay time td(on) - 32 -
VDD=300V
Turn-on Rise time tr - 35 -
ID=10A ns
Turn-off Delay time td(off) - 88 -
RG=25 (Note4,5)
Turn-off Fall time tf - 30.5 -
Input Capacitance Ciss - 1255 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 160 - pF
Reverse Transfer Capacitance Crss - 16.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 10
VGS<Vth A
Pulsed Source Current ISP - - 40
Diode Forward Voltage VSD IS=10A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=10A, VGS=0V, - 350 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4.2 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =5.5mH, IS=10A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 10A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.

Marking

1
1
KF10N60
KF10N60
F 813 2
P 801 2

1 PRODUCT NAME

2 LOT NO

2008. 11. 12 Revision No : 0 2/7

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Fig1. ID - VDS Fig2. ID - VGS

100
VDS=30V
VGS=10V 10
1
Drain Current ID (A)

Drain Current ID (A)

VGS=7V
10

VGS=5V 100 C
0 25 C
10
1

-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 2.4
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
2.0
1.1
1.6

1.0 1.2
VGS=6V

0.8
0.9 VGS=10V

0.4

0.8 0
-100 -50 0 50 100 150 0 5 10 15 20

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

2
10 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 5A
100 C 2.5
Normalized On Resistance

25 C

1 2.0
10

1.5

0 1.0
10

0.5

10
-1 0.0
0.4 0.6 0.8 1.0 1.2 1.4 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

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Fig 7. C - VDS Fig8. Qg- VGS

104 12
ID=10A
VDS = 480V

Gate - Source Voltage VGS (V)

10
VDS = 300V
Ciss
Capacitance (pF)

103 8
VDS = 120V

6
Coss
102 4

2
Crss
101 0
0 10 20 30 40 0 5 10 15 20 25 30 35 40

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. Safe Operation Area

(KF10N60P) (KF10N60F)
102 102
100µs

100µs
Drain Current ID (A)
Drain Current ID (A)

101 1ms 101

1ms
10ms
100ms 10ms
100 100
Operation in this Operation in this 100ms
area is limited by RDS(ON) DC area is limited by RDS(ON)

10-1 10-1 DC
Tc= 25 C Tc= 25 C
Tj = 150 C Tj = 150 C
Single pulse Single pulse
102 102
100 1
10 102 103 100 101 102 103
Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)

Fig11. ID - Tj

14

12
Drain Current ID (A)

10

0
25 50 75 100 125 150

Junction Temperature Tj ( C)

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Fig12. Transient Thermal Response Curve

(KF10N60P)
100
Transient Thermal Resistance

Duty=0.5

0.2

10-1 0.1

0.05
PDM
0.02
t1
0.01
t2
10-2
Single Pulse
- Duty Factor, D= t1/t2

10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

Fig13. Transient Thermal Response Curve

(KF10N60F)
Transient Thermal Resistance

100 Duty=0.5

0.2

0.1
PDM
0.05
10-1 t1
0.02
t2
0.01

Single Pulse - Duty Factor, D= t1/t2

10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

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Fig14. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig15. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig16. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

2008. 11. 12 Revision No : 0 6/7

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Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

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