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Basic

Electrical and
Electronics
Engineering
As per JNTU Hyderabad R16 syllabus

M.S.Sukhija
Founder & Former Principal
Guru Nanak Dev Engineering College
Bidar, Karnataka

T.K.Nagsarkar
Former Professor and Head
Department of Electrical Engineering
Punjab Engineering College
Chandigarh

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© Oxford University Press 2016

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First published in 2016

All rights reserved. No part of this publication may be reproduced, stored in


a retrieval system, or transmitted, in any form or by any means, without the
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above should be sent to the Rights Department, Oxford University Press, at the
address above.

You must not circulate this work in any other form


and you must impose this same condition on any acquirer.

ISBN-13: 978-0-19-947428-8
ISBN-10: 0-19-947428-1

Typeset in Times New Roman


by Ideal Publishing Solutions, Delhi
Printed in India by Magic International (P) Ltd, Greater Noida

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by Oxford University Press in good faith and for information only.
Oxford University Press disclaims any responsibility for the material contained therein.
ROADMAP TO SYLLABUS
Basic Electrical and Electronics Engineering
(As per JNTU Hyderabad R16 syllabus)

Syllabus Chapter/Section in the Book


UNIT I
Electrical Circuits: R-L-C Parameters, Voltage and Current,
Independent and Dependent Sources, Source Transformation –
V-I relationship for passive elements, Kirchhoff’s Laws, Network Chapter 1 Introduction to Electrical
reduction techniques – series, parallel, series-parallel, star-to-delta, Engineering
delta-to-star transformation, Nodal Analysis
Single Phase AC Circuits: R.M.S. and Average values, Form
Factor, steady state analysis of series, parallel and series-parallel
combinations of R, L and C with sinusoidal excitation, concept Chapter 3 Alternating Quantities
of reactance, impedance, susceptance and admittance – phase and (Till Section 3.13)
phase difference, Concept of power factor, j-notation, complex and
polar forms of representation.
UNIT II
Resonance: Series resonance and Parallel resonance circuits, Chapter 3 Alternating Quantities
concept of bandwidth and Q factor, Locus Diagrams for RL, RC (Section 3.14)
and RLC Combinations for various parameters.
Network Theorems: Thevenin’s, Norton’s, Maximum Power
Transfer, Superposition, Reciprocity, Tellegen’s, Millman’s and Chapter 2 Network Analysis and
Compensation theorems for DC and AC excitations. Network Theorems
UNIT III
P-N Junction Diode: Diode equation, Energy Band diagram,
Volt-Ampere characteristics, Temperature dependence, Ideal versus
practical, Static and dynamic resistances, Equivalent circuit, Load
line analysis, Diffusion and Transition Capacitances. Chapter 4 Semiconductor Theory
Recti¿ers and )ilters: P-N junction as a recti¿er - +alf :ave and Diode Principles
Recti¿er, Ripple Factor – Full :ave Recti¿er, Bridge Recti¿er,
+armonic components in Recti¿er Circuits, Filters – Inductor
Filters, Capacitor Filters, L - section Filters, ʌ - section Filters.
UNIT IV
Bipolar Junction Transistor (BJT): Construction, Principle
of Operation, Symbol, Amplifying Action, Common Emitter,
Common Base and Common Collector con¿gurations.
Transistor Biasing And Stabilization - Operating point, DC and
AC load lines, Biasing – Fixed Bias, Emitter Feedback Bias,
Collector to Emitter feedback bias, Voltage divider bias, Bias Chapter 5 Basics of Bipolar
stability, Stabilization against variations in VBE and ȕ, Bias Junction Transistors
Compensation using Diodes and Transistors.
Transistor Con¿gurations: B-T modeling, +ybrid model,
Determination of h-parameters from transistor characteristics,
Analysis of CE, CB and CC con¿gurations using h-parameters,
Comparison of CE, CB and CC con¿gurations.
UNIT V
Junction )ield EIIect Transistor: Construction, Principle of
Operation, Symbol, Pinch-Off Voltage, Volt-Ampere Characteristic, Chapter 6 Basics of Field Effect
Comparison of BJT and FET, Small Signal Model, Biasing FET. Transistors
Special Purpose Devices: Breakdown Mechanisms in
Semi-Conductor Diodes, Zener diode characteristics, Use of Zener
diode as simple regulator, Principle of operation and Characteristics
of Tunnel Diode (:ith help of Energy band diagram) and Varactor Chapter 7 Special Purpose Diodes
Diode, Principle of Operation of SCR.

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Preface
Engineering institutions have been continually modernizing and updating their cur-
ricula to keep pace with the technological advancements and meet the demands of
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the needs of the light–current engineering industries (electronics, communication,
instrumentation, controls, computers, etc.) and to enhance the employability of their
graduates, several universities replaced their traditional ‘Basic Electrical Engineer-
ing’ (common to all disciplines) with ‘Basic Electrical and Electronics Engineering’.
The present text, Basic Electrical and Electronics Engineering, has been written with
the objective of meeting the needs of both the faculty and students of Jawaharlal
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The present text has been designed and developed to ensure that the fundamen-
tals of this course are well understood by students of all disciplines of engineering.
Simultaneously, fundamentals of important topics, in major subject areas, have been
discussed to provide a foundation for the study of advanced topics, by students of
various current engineering disciplines in their subsequent programmes of study.
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cal and Electronics Engineering’ offered by JNTU.

About the Book


At the outset, the authors would like to state that a lot of effort was made to get
right the contents of this title and to ensure that it meets the syllabi requirements of
JNTU offering an introductory course of Basic Electrical and Electronics Engineer-
ing in their graduate engineering programmes.,WLV¿UPO\EHOLHYHGWKDWWKLVERRN
will help students to overcome their initial apprehensions and initiate a life-long
affair with electrical and electronics engineering.
Written in a simple, yet lucid style, the book presents a clear and concise expo-
sition of the principles and applications of electrical and electronics engineering.
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concepts and build a strong foundation in the subject. Keeping in mind the needs
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Key Features
™ An in-depth and all-inclusive treatment of the various aspects of electrical
and electronics engineering.
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scope of the chapter.
™ Chapter-end recapitulation provides a summary of the main topics studied
for quick revision.
™ 6HYHUDOFLUFXLWGLDJUDPVDQGÀRZFKDUWVKDYHEHHQLQFOXGHGWRVXSSOHPHQW
the theory.

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vi Preface

™ To provide a better understanding of the principles and their applications,


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included.
™ Numerous chapter-end objective type questions and problems (with
answers) stimulate the readers’ interests and assist the students to meet
the challenges of examinations.

Content and Coverage


The book consists of seven chapters with three devoted to heavy current (electrical)
engineering and the remaining four to electronics.
Chapter 1, Introduction to Electrical Engineering, discusses the basics of
electricity, electrical quantities, elements, and various associated laws govern-
ing the principles of electrical engineering.
Chapter 2, Network Analysis and Network Theorems, deals with the basics
of network theory, independent and dependent current and voltage sources
and their conversions, types of networks and their analyses, and network
theorems and their applications.
Chapter 3, Alternating Quantities, discusses generation of ac voltage, rep-
resentation of alternating quantities, phasor algebra, single-phase series and
parallel circuits, power and power factor, and series and parallel resonance.
Chapter 4, Semiconductor Theory and Diode Principles, provides an introduc-
tion to semiconductor theory, semiconductor materials, conduction process
and types of semiconductors, PN junction, reverse saturation, and drift and
diffusion currents. It also covers PN junction diode, its static V–I character-
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DUHFWL¿HUDQGVPRRWKLQJRIRXWSXWYROWDJHThe chapter also discusses the
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Chapter 5, Basics of Bipolar Junction Transistors, deals with the categories
and fabrication of transistors, operation, input and output characteristics,
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DPSOL¿HUJDLQ4SRLQWVWDELOL]DWLRQWUDQVLVWRUDVDVZLWFK Bias stability is
also described in the chapter.
Chapter 6, Basics of Field Effect Transistors, presents the structure of a JFET,
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methods to bias an FET are also included.
Chapter 7, Special Purpose Devices, explains the breakdown mechanisms in
diodes and discusses three special type of diodes—tunnel diode, varactor
diode, and Shockley diode along with the operation principle of an SCR.

Acknowledgements
The authors thankfully acknowledge the invaluable inputs made by the faculty
members from various technical institutes under the aegis of JNTU-H along with
the ever active members of the editorial department of OUP, in bringing out this
impressive title.
M.S. Sukhija
T.K. Nagsarkar

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Contents
Preface v
1. Introduction to Electrical Engineering 1
1.1 Core of Electricity and Electronics 1
1.2 Atomic Structure and Electric Charge 2
1.3 Conductors, Semiconductors, and Insulators 2
1.4 Electric Current 4
1.5 Electromotive Force 5
1.6 Electric Power 6
1.7 Ohm’s Law 7
1.8 Basic Circuit Components 8
1.8.1 Resistors 8
1.8.2 Inductors 13
1.8.3 Capacitors 15
1.9 Kirchhoff’s Laws 19
2. Network Analysis and Network Theorems 29
2.1 Introduction 29
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2.3 Network Sources 30
2.3.1 Ideal Independent Voltage Sources 30
2.3.2 Ideal Independent Current Source 31
2.3.3 Dependent Sources 32
2.3.4 Practical Voltage and Current Sources 32
2.3.5 Source Conversion 35
2.4 Resistive Networks 38
2.4.1 Series Resistors and the Voltage Divider Rule 38
2.4.2 Parallel Resistors and the Current Divider Rule 39
2.5 Inductive Networks 42
2.5.1 Inductances in Series 43
2.5.2 Inductances in Parallel 43
2.6 Capacitive Networks 44
2.6.1 Capacitances in Series 44
2.6.2 Capacitances in Parallel 45
2.7 Series-parallel Circuits 47
2.8 Star–delta or Y–' Transformation 48
2.8.1 Star Resistances in Terms of Delta Resistances 48
2.8.2 Delta Resistances in Terms of Star Resistances 49
2.9 Node Voltage Analysis Method 50
2.9.1 Nodal Analysis with Voltage Sources 53
2.10 Mesh Current Analysis Method 55
2.10.1 Mesh Analysis with Current Sources 57
2.11 Nodal and Mesh Analyses with Dependent Sources 58
2.11.1 Node-Voltage versus Mesh-Current Techniques 60

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viii Contents

2.12 Network Theorems 61


2.12.1 Superposition Theorem 61
2.12.2 Thevenin’s Theorem 62
2.12.3 Norton’s Theorem 67
2.12.4 Maximum Power Transfer Theorem 69

3. Alternating Quantities 81
3.1 Introduction 81
3.2 Generation of ac Voltage 82
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3.4 Relationship Between Frequency, Speed, and Number of Poles 89
3.5 Root Mean Square and Average Values of Alternating Current
and Voltage 89
3.5.1 Root Mean Square or Effective Values 89
3.5.2 Average Value 92
3.6 Form Factor and Peak Factor 93
3.7 Phasor Representation of Alternating Quantities 98
3.7.1 Phasor Representation of Quantities with a Phase Difference 100
3.7.2 Addition and Subtraction of Phasor Quantities 101
3.8 The j Operator and Phasor Algebra 103
3.8.1 Resolution of Phasors 104
3.8.2 The j Operator 104
3.8.3 Representation of Phasors in the Complex Plane 105
3.8.4 Phasor Algebra 105
3.9 Analysis of ac Circuits with Single Basic Network Element 108
3.9.1 Resistive Circuit 108
3.9.2 Purely Inductive Circuits 109
3.9.3 Purely Capacitive Circuit 112
3.10 Single-phase Series Circuits 115
3.10.1 Resistance and Inductance in Series 115
3.10.2 Resistance and Capacitance in Series 119
3.10.3 Resistance, Inductance, and Capacitance in Series 123
3.10.4 Impedances in Series 128
3.11 Single-phase Parallel Circuits 129
3.11.1 Resistance and Inductance in Parallel 129
3.11.2 Resistance and Capacitance in Parallel 131
3.11.3 Resistance, Inductance, and Capacitance in Parallel 133
3.11.4 Impedances in Parallel 135
3.12 Series Parallel Combination of Impedances 137
3.13 Power in ac Circuits 140
3.13.1 Power in Resistive Circuits 141
3.13.2 Power in a Purely Inductive Circuit 142
3.13.3 Power in Purely Capacitive Circuits 143
3.13.4 Power in a Circuit with Resistance and Reactance 144
3.13.5 Need for Power Factor Improvement 148
3.14 Resonance in ac Circuits 151
3.14.1 Resonance in Series Circuits 151
3.14.2 Resonance in Parallel Circuits 157
3.14.3 Locus Diagrams for RL, RC, and RLC 162
3.15 Star–Delta or Y-' Transformation 167

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Contents ix

3.16 Nodal Voltage and Mesh Current Analysis of ac Networks 168


3.17 Network Theorems for ac Networks 170
3.17.1 Superposition Theorem 170
3.17.2 Thevenin’s Theorem 171
3.17.3 Norton’s Theorem 172
3.17.4 Maximum Power Transfer Theorem 174
3.17.5 Reciprocity Theorem 176
3.17.6 Compensation Theorem 178
3.17.7 Tellegen’s Theorem 180
3.17.8 Millman’s Theorem 183

4. Semiconductor Theory and Diode Principles 210


4.1 Introduction to Semiconductor Theory 210
4.2 Semiconductors 212
4.3 Intrinsic Semiconductor 213
4.3.1 Electron–Hole Pair Generation 213
4.3.2 Conduction in Intrinsic Semiconductors 214
4.4 Extrinsic Semiconductors 215
4.4.1 N-type Semiconductors 215
4.4.2 P-type Semiconductors 216
4.4.3 Comparison of N- and P-type Semiconductors 217
4.5 The P–N Junction 218
4.5.1 Drift and Diffusion Currents 219
4.6 The P–N Junction Diode 219
4.6.1 Reverse Bias 220
4.6.2 Forward Bias 220
4.6.3 Static V-I characteristic 222
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4.7 Diode Categories and Their Applications 226
4.7.1 Signal Diodes 226
4.7.2 Zener Diode 227
4.7.3 Light Emitting Diode 230
4.7.4 Schottky Diode 231
4.7.5 Laser Diodes 231
4.7.6 Photo Diodes 231
4.7.7 PIN Diode 232
4.8 Power Diodes 233
4.8.1 Construction 233
4.8.2 Forward Biasing 233
4.8.3 Reverse Biasing 234
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4.10 Smoothing of dc Output Voltage 241
4.10.1 Inductor Filter 242
4.10.2 Capacitor Filter 242
4.10.3 L- section or LC Filter 244
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x Contents

5. Basics of Bipolar Junction Transistors 256


5.1 Introduction 256
5.2 Bipolar Junction Transistor 257
5.3 Fabrication of an NPN BJT 258
5.4 Operation of NPN Transistor 259
5.5 Input and Output Characteristics of Bipolar Junction Transistor 261
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5.6 Load Line and Location of Operating Point 270
5.7 Biasing of a Transistor 272
5.7.1 Fixed Bias Circuits 273
5.7.2 Biasing with Feedback Resistor 275
5.7.3 Voltage Divider Bias Network 276
5.8 Transistor Applications 277
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5.8.2 Transistor as a Switch 298
5.9 Bias stability 299
5.9.1 Bias Compensation 300
6. Basics of Field Effect Transistors 311
6.1 Introduction 311
6.2 Junction Field Effect Transistor 311
6.3 Theory of Operation of JFET 313
6.3.1 Output Characteristics 314
6.3.2 Transfer Characteristics 316
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6.5 JFET Applications 318
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6.5.2 JFET as a Switch 324
6.6 Comparison of a BJT and a JFET 325
6.7 Biasing an FET 326
6.7.1 Fixed bias 326
6.7.2 Self bias 327
6.7.3 Potential Divider Bias 327
6.8 MOS Field Effect Transist 328
7. Special Purpose Diodes 336
7.1 Introduction 336
7.2 Breakdown Mechanisms In Semi-Conductor Diodes 336
7.2.1 Zener Effect 336
7.2.2 Avalanche Effect 336
7.3 Tunnel Diode 337
7.4 Varactor Diode 338
7.5 Shockley Diode 339
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7.6.1 Constructional Features of SCR 340
7.6.2 Principle of Operation of SCR 341
About the Authors 345

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