EBERS Moll Model

Presented by
K.Pandiaraj
Assistant Professor
ECE Department
Kalasalingam University
 BJT Device Models
• The primary function of a model is to predict the
behaviour of a device in particular operating region.
• Small-signal models
– Hybrid (h) Parameter Model
– Hybrid-pi model
• Large-signal models
– Ebers–Moll model: Voltage & current control model
– Gummel–Poon model : charge-control model
 Ebers–Moll Model
• The classic mathematical model for the bipolar junction transistor
is the Ebers-Moll model formulated by J. J. Ebers and J. L. Moll
from Bell Laboratories in the early 1954.
• Ebers-Moll model also known as “Coupled Diode Model”
• The Ebers-Moll model provides an alternative view or
representation of the voltage-current equation model.
• Model includes configurationally series resistances, depletion
capacitances and the charge carrier effects.
 Ebers – Moll model Designing
• Ebers–Moll model for pnp
transistor involves two ideal
diodes placed back to back
with saturation current
• Ieo & Ico and two current
dependent controlled sources
shunting the ideal diodes. Transistor currents and Voltages direction

Ebers-moll model for a PNP transistor

 Ebers – Moll Model Equation
• By applying KCL to emitter node we get
• IE + αI IC = I or IE = I – αI IC or IE = - αI IC + I
• IE = - αI IC + I0 (e VE / VT – 1)
• IE = -αI IC – IE0 (e VE / VT – 1) ................................. (1)
• This model is valid for both forward & reverse static
voltages applied across the transistor junction.
• In the above model, by making the base width much
large than the diffusion length of minority carriers in the
base, all minority carriers will recombine in the base and
none will survive to reach the collector.
 Ebers – Moll Model Equation
• Let us see the equations of Ic and IE from Ebers – moll
model. Applying KCL to the collector node, we get
• αN IE + IC = I
• IC = I – αN IE
• IC = - αN IE + I ; Where, I is diode current.
• IC = - αN IE + I0 (e Vc / VT – 1)
• Note: I0 = - IC0 ; Where , I0 is the magnitude of reverse
saturation current .
• IC = - αN IE – ICO (e VC / VT ) ……………………………….. (2)

•
 Ebers – Moll model Parameters
• General expression for collector current IC of a transistor for any
voltage across collector junction Vc and emitter current IE is
IC = -αN IN – ICO (e VC / VT – 1)
• Subscript N to α indicates that we are using transistor in a normal
manner.
• When we interchange the role of emitter and collector we operate
transistor in a inverted function. In such case current and junction
voltage relationship for transistor is given by
IE = - αI IC – IEO (e vE / VT – 1)
• Subscript I to α indicates that we are using transistor in a inverted
manner, αI is the inverted common – base current Gain.

IEO: The emitter junction reverse saturation current.

VE : The voltage drop from p – side to N – side at the emitter junction.
 Forward Characteristics of the npn Transistor
• The total current crossing the emitter-base junction in
the forward direction is described as (equation-1)

Equation (1)

Where IES represents the reverse saturation current of the base-emitter diode.

Collector current can be rewritten in terms of IES as (equation-2)

Equation (2)

Forward common-base current gain αF represents the fraction of the emitter

current that crosses the base and appears in the collector terminal.
 Reverse Characteristics of the npn Transistor
• For the reverse direction, the current crossing the collector-base
junction is described as (equation-3)

Equation (3)

The new parameter ICS represents the reverse saturation current of

the base-emitter diode. The emitter current can be rewritten in terms
of ICS as (equation-4)

Equation (4)

The reverse common-base current gain αR represents the fraction of the

collector current that crosses the base from the emitter terminal.
 Ebers-Moll Model for the npn Transistor
• Complete Ebers-Moll equations are obtained by combining
Equations 1-4.

Equation (5)

This model contains four parameters, IES, ICS, αF , and αR. From the
definitions of IES and ICS, we can obtain the important auxiliary relation
Equation (6)

which shows that there are only three independent parameters in the Ebers-Moll
model, just as in the transport formulation. The base current, given by iB = iE − iC, is

Equation (7)
Equivalent Circuit Representations for the
Ebers-Moll Models… npn transistors
Equivalent Circuit Representations for the
Ebers-Moll Models… pnp transistors
Ebers–Moll Operating Characteristic
 BJT Ebers-Moll Model SPICE model: DC model
• SPICE uses the Ebers-Moll transistor model
• You know the following BJT equations:
Ebers-Moll model Versions