Beruflich Dokumente
Kultur Dokumente
in
ENGINEERING COLLEGES
2017 – 18 Odd Semester
IMPORTANT QUESTIONS AND ANSWERS
Department of ECE
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TEXT BOOKS:
1. Reinhold Ludwig and Gene Bogdanov, “RF Circuit Design: Theory and
Applications”, Pearson Education Inc., 2011
2. Robert E Colin, “Foundations for Microwave Engineering”, John Wiley & Sons
Inc, 2005
REFERENCES:
1. David M. Pozar, “Microwave Engineering”, Wiley India (P) Ltd, New Delhi,
2008. 2. Thomas H Lee, “Planar Microwave Engineering: A Practical Guide to
Theory, Measurements and Circuits”, Cambridge University Press, 2004.
3. Mathew M Radmanesh, “RF and Microwave Electronics”, Prentice Hall, 2000.
4. Annapurna Das and Sisir K Das, “Microwave Engineering”, Tata Mc Graw
Hill Publishing Company Ltd, New Delhi, 2005.
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TI 168-171
4 properties of S parameters- 2
Reciprocal and lossless networks R1 175-178
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Total Periods: 49
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TABLE OF CONTENTS
S.NO TITLE PAGE
NO
UNIT – I : TWO PORT NETWORK THEORY
PART A 11-13
PART B
1 Low frequency and high frequency parameter 13-21
2 Property of S-Matrix 21-23
3 Reciprocal and Lossless Network 23-25
4 Transmission [T] Matrix 26-27
5 Passive components behaviour at RF 27-30
6 Problem 30-33
7 Interconnection of two port network 33-36
UNIT II : RF AMPLIFIERS AND MATCHING NETWORKS
PART A 37-38
PART B
1 Amplifier-power relations 38-42
2 Stability considerations and Stabilization methods 43-46
3 Impedance Matching Using Discrete Components 46-51
and Microstrip line matching networks
4 Noise figure 51-53
5 Frequency response and quality factor 53-55
6 Problems 56-59
UNIT III : PASSIVE AND ACTIVE MICROWAVE DEVICES
PART A 60-62
PART B
1 Hybrid junctions (E-Plane Tee & H-Plane Tee, 62-67
Magic-tee)
2(i) Four Port Circulator 68-69
2(ii) Isolator 69-70
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7. Express power input and power output under matched conditions for a
two Port network in terms of wave components.
Microwave circuits are analyzed using [S] parameters which linearly
relate the reflected wave’s amplitude with those of incident waves.
1
Input power at nth port, Pin
2
an
2
Where a n =normalized incident wave amplitude at nth port
1
Reflected power at nth port, Pout
2
bn
2
Where bn =normalized reflected wave amplitude at nth port
8. What is ESR? [Nov/Dec-2013]
Practical capacitors and inductors are used in electric circuit not ideal
components with only capacitance or inductance. The ideal capacitances and
inductors are in series with resistance. This type of resistance is called
Equivalent series resistance.
9. Why the S-parameters are used in microwaves?
The H, Y, Z and ABCD parameters are difficult at microwave frequencies
due to following reasons.
Equipment is not readily available to measure total voltage and total
current at the ports of the networks.
Short circuit and open circuit are difficult to achieve over a wide range
of frequencies.
Presence of active devices makes the circuit unstable for short (or)
open circuit.
10. Write the applications of inductors.
Resonance circuits
Filters
Phase shifters
Delay networks and
RF chokes.
11. Define- Lossless Network
In lossless passive network, the power entering the circuit is always equal
to power leaving network which leads to the conservation of power.
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v1 v1
Z 11 & Z 12 …………………….. (1.5)
i1 i2 0
i2 i1 0
Where
Z11 -open circuit input impedance
v2 v2
Z 21 & Z 22 …………………. (1.6)
i1 i2 0
i2 i1 0
Where
Z 21 -open circuit input impedance
Z 22 -Open circuit reverse transfer impedance.
The Z parameters are measured by open circuiting any one of the port.
Therefore it is known as open circuit parameters. The impedance matrix
representation of a two port network is shown in figure.
For N –network
For N-port network, impedance matrices are NxN in size. There are 2N2
independent quantities for an arbitrary N-port network.
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v i Y11 Y12
[V ] 1 ; [ I ] 1 ; & [Y ] ………………….. (2.2)
v 2 i2 Y21 Y22
By short-circuiting either input or output terminals the Y parameters Y11, Y12, Y21
and Y22 are derived from the equations (1.1) and (1.2) as follows.
From equation (1.9)
i1 Y11v1 Y12v2
i1 i1
Y11 & Y12 ………………….. (2.3)
v1 v2 0
v2 v1 0
Where
Y11 -short circuit input Admittance
Y12 - Short circuit reverse transfer Admittance
From equation (2.0)
i2 Y21v1 Y22v2
i2 i2
Y21 & Y22 …………………. (2.4)
v1 v2 0
v2 v1 0
Where
Y21 -short circuit input Admittance
Y22 - Short circuit reverse transfer Admittance.
The Y parameters are measured by short circuiting any one of the port.
Therefore it is known as open circuit parameters. The Admittance matrix
representation of a two port network is shown in figure.
For N –network
For N-port network, the Y-parameters can be expressed as follows
i1 Y11v1 Y12v 2 ........ Y1N v N
i2 Y21v1 Y22v 2 ........ Y2 N v N
.
…………………….. (2.5)
.
.
i N YN 1v1 YN 2 v 2 ....... YNN v N
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c. Hybrid Parameters
The h-parameters are widely used at RF frequencies. The h-parameters
are obtained by short-circuiting the out-put port and open circuiting the input
port. In the hybrid model v 2 and i1 are assumed to be known parameters and
unknown parameters are v1 and i 2 .
The hybrid parameters are
v1 h11i1 h12v2 ………………… (2.7)
i2 h21i1 h22v2 ………………… (2.8)
The above two equations can be written in matrix form as follows
v1 h11 h12 i1
i h …………… (2.9)
2 21 h22 v2
Therefore the overall h-matrix can be written as follows
h11 h12
[h]
h21 h22
The h-parameters h11 and h21 can be found by short circuiting the output port.
Equation 2.7 and 2.8 gives
v1 i2
h11 & h21 ……………… (3.0)
i1 v2 0
i1 v12 0
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The h12 and h22 can be found by open circuiting the input port.
v1 i2
h12 & h22 ………………… (3.1)
v2 i1 0
v2 i1 0
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The ABCD matrix for first and second network can be written as follows
v1 A1 B1 v2
i C D1 i2
……………. (3.5)
1 1
v2 A2 B 2 v 3
i C D2 i3
……………… (3.6)
2 2
Substituting of equation (3.6) into (3.5) gives
v1 A1 B1 A2 B2 v3
i C D1 C D2 i3
1 1 2 ……………….(3.7)
The above equation clearly shows that the ABCD matrix of the
cascade connection of the two port network is equal to the product of the
ABCD matrices representing the individual two-port networks.
When N number of two port networks are connected together, the
ABCD matrix for a cascaded network is given by
v1 A1 B1 A2 B2 A B N v N
i C D1 C 2 ………. N
DN i N
1 1 D2 C N
A B A1 B1 A2 B2 AN B N v N
= …….. C
C D
Total C1 D1 C
2 D2 N DN i N
…(3.8)
Advantages of ABCD Matrices
Easy to build-up library of ABCD matrices.
Easy to analyze complicated microwave networks.
High Frequency [S] Parameters
Formulation of S parameters
The parameters that linearly relate the incident and reflected wave
amplitude are called scattering parameters or S-parameters.
The incident and reflected amplitudes of microwave at any port are used
to characterize a microwave circuits.
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For a two port network the relation between incident and reflected waves
are expressed in terms of scattering parameters S ij
b2
S 22
a2 a1 0
b1
S12
a2 a1 0
b2
S 21
a1 a2 0
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Where
[b] =reflected waves or outputs
[a]=Incident waves or inputs
[S]=Scattering matrix of order nxn
2. Explain in detail about Property of S-Matrix. [Nov/Dec-2011]
Property1:
Zero diagonal elements for perfect matched network.
For an ideal N-port network with matched termination S ii 0 .Since there
is no reflection from any port. Therefore under perfect matched condition the
diagonal elements of [S] are zero.
Property 2
Symmetry of [s] for a reciprocal network.
A reciprocal device has the same transmission characteristics in either
direction of a pair of ports is characterized by a symmetric scattering matrix.
S ij S ji i j ........................... (1)
Which results
[ S ]t [ S ] ............................ (2)
Proof:
For a reciprocal network with the assumed normalization the impedance
matrix equation is
[b] ([Z ] [U ]) 1 ([Z ] [U ])[a] ........................ (3)
Where [U] is the unit matrix.
S-matrix equation for the network is
[b]=[S] [a] .............................. (4)
By combining equation (3) and (4) we get
[S]= ([Z] + [U])-1([Z]-[U]) ........................... (5)
Let [R] = [Z]-[U]
[Q]= [Z] + [U] .............................. (6)
For reciprocal network, the Z-matrix is symmetric.
[R][Q]= [Q] [R]
[Q]-1[R] [Q] [Q]-1= [Q]-1[Q] [R [Q]-1 .................... (7)
[Q]-1[R] =S=[R] [Q]-1
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bn an
2 2
n 1 n 1
N n 2 N
S ni ai an
2
…………....... (12)
n 1 i 1 n 1
If it only ith port is excited and all other ports are matched terminated, all an 0
except ai.
N 2 N
S ni ai ai
2
. ……….......... (13)
n 1 n 1
N 2 N …….............. (14)
S ni 1 S ni S ni
n 1 n 1
S
ni S ni =1 ……….......... (15)
n 1
S
nk S ni 0 ; i k ………........... (16)
n 1
In matrix notation
[S]*[S]t= [U]
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For a two port network with reference planes 1 and 2 as shown in the figure,
the S-matrix is given by
S S12
[ S ] 11
S 21 S 22
This property is valid for any number of port and it is called the phase shift
property applicable to shift of reference.
3. Explain and analyze Reciprocal and Lossless Network. [Nov/Dec-2012]
A network is said to be reciprocal network when it satisfies the reciprocity
theorem.
Reciprocity theorem:
It is a theorem stating that the interchange of electromotive force at one
point (e.g. in branch k, v k ) in a passive linear network, with the current produced
at any other point (e.g in branch m, i m ) results in the same current (in branch k,
i k ) when the same electromotive force is applied in the new location (branch m,
v m ); that is
vk vm
im ik
Z km Z mk
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Lossless network
A network that should not contain resistive elements is called lossless
network. The lossy network contains the resistive elements, which always
dissipates power. Therefore the lossless network should satisfies the following
condition.
It should not contain resistive elements.
The elements of Z and Y must be purely imaginary.
The [S] must be a unitary matrix.
Power entering to the network =Power leaving from the network.
It delivers only imaginary power. Therefore real power equals to zero.
The characteristic impedance of all ports are identical.
Lossless network as a unitary matrix
Matrix that satisfies the unity and zero property is called unitary matrix.
Unity property: It states that ‘’for a passive lossless N-port network, the sum
of the products of each term of any one row (or any one column) multiplied by
its own complex conjugate is unity’’. i.e.
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S S ij 1 , J=1, 2, 3....N
*
ij
S12 S12 S 22 S 22 1
* *
If a lossless network is also reciprocal then the above two equation can be
reduced as follows
S12 S 21
S11 S 22
S11 S 21 1
2 2
Zero Property.
It states that ‘’for a passive lossless N-port network, the sum of the
products of each term of any one row(or any one column) multiplied the
complex conjugate of the corresponding terms of any other row or column is
zero’’.
N
S S kj 0
*
ki
k 1
Where ‘k’ and ‘j’ are row and column numbers respectively.
From the above equation
S11S12 S 21S 22 0
* *
S12 S11 S 22 S 21 0
* *
If the lossless network also reciprocal then the above two equation can
be reduced as follows
S12 S 21
S11S 21 S 21S 22 0
* *
S11 S 22
Unitary matrix is one ‘’the matrix which satisfies both the unitary and zero
property’’.
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RF Behaviour of an inductor
A wire that is wound (or coiled) in such a manner as to increase the
magnetic flex linkage between the turns of the coil. The increased flux linkage
increases the wire’s self-inductance.
• Equivalent circuit of a inductor at low frequency RF is
Case1:f<fr
In this region inductance reactance increases as frequency increased.
Case2:f>fr
In this region inductor behaves like a capacitor, and as the frequency is
increased the reactance decreases.
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Case3:f=fr
In this region resonance takes place in inductor.
Quality factor:
The quality factor (Q) of an inductor is defined as
X L L
Q
RS RS
RF Behaviour of a Capacitor
A capacitor is a device that consist of two conducting surface separated
by a insulating material or dielectric. The dielectric is usually ceramic, air, paper,
mica or plastic. The capacitor is the property that permits the storage of charge
when a potential difference exists between the conductors. It is measured in
farads. At RF/MW frequencies, a capacitor C appears as combination of several
elements.
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Case 1.f>fr
In this region the capacitor acts like an inductor.
Quality factor:
The quality factor for a capacitor is given by
XC 1
Q
REQ CREQ
6. (a)A two port network is known to have the following scattering matrix
0.150 0.85 45
[S ]
0.8545 0.20
|0.15|2+|0.85|2=1
0.745 1
Therefore the given network is not a lossless network.
(b)If the port two is terminated with a matched load what is the return loss at
port 1?
S11=0.15
1 1
Return Loss= 20 log (db) 20 log 16.478db
S11 0.15
Return loss=16.5db
6. (b) Problem 2:
Evaluate S parameters from the Z parameters. [Nov/Dec-2015]
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2 3 j 5 j
[Z ] , Z 0 50
3j j
Solution:
Given Impedance matrix is asymmetrical and characteristics impedance
Z 0 50 S parameter computed as
To find Z
Z (Z11 Z 0 )(Z 22 Z 0 ) Z12 Z 21
To find S12
2Z12 Z 0
S12
Z
2(5 j )(50)
S12
2618 98 j
S12 0.00714 j191
To find S 21
2Z1 Z 0
S 21
Z
2(3 j )50
S 21
2618 98 j
S 21 0.00428 j114
To find S 22
( Z11 Z 0 )(Z 22 Z 0 ) Z12 Z 21
S 22
( Z11 Z 0 )(Z 22 Z 0 ) Z12 Z 21
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S 22 0.988 0.0402
Answer
The S-Parameters are
S11 0.906 j110
S 21 0.00428 j114
S 22 0.988 0.0402
6. (c) Problem 3: [Nov/Dec-2015]
Find the S-parameter for the following circuit.
Solution:
To find Z in
Z in 20 ( j50 || 50)
j 50 50
= 20
50 j 50
Z in 23.57 j135
To find Z 0
Z out j 50 || (20 50)
Z out 23.64 j33.10
To find S-parameter:
Z in Z 0
S11
Z in Z 0
23.57 j135 50
S11
23.57 j135 50
Z out Z 0
S 22
Z out Z 0
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23.64 j33.10 50
S 22
23.64 j33.10 50
S 22 1.688 j 0.870
Since the circuit is passive the forward and reverse gains are equal.
2V2 2( Z in 20)
S12 S 21
Vg Z in Z 0
S 22 1.688 j 0.870
S12 S 21 2.0633 j 718862
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v1 Z11 i1 Z12 i2
, , , , '
v2 Z 21 i1 Z 22 i2
, , , , '
v1 Z11 i1 Z12 i2
'' '' '' '' ''
v2 Z 21 i1 Z 22 i2
'' '' '' '' ''
' ''
, '' ''
Z 21 Z 21 Z 22 Z 22 i2 i2
'' ' '
2
v v 2
v1 i1
v Z i
2 2
i1 Y11 v1 Y12 v2
' ' ' ' '
i2 Y21 v1 Y22 v2
' ' ' ' '
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i1 Y1 v11 Y12 v2
'' '' '' '' ''
i2 Y21 v1 Y22 v2
'' '' '' '' ''
i1 v1
i Y v
2 2
Cascading networks
In cascade connection, two transistors are connected in cascade. The
ABCD parameter description is most suitable for cascading networks.
In this network voltage drop across the first network is equal to the voltage
drop across the second network.
v2 v1
' ''
i.e
For the first network the ABCD representation is
v1 A' v2 B 'i2
' ' '
i1 C ' v2 D 'i2
' ' '
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In matrix form
v1' A ' B ' v2 '
' ' …………. (5)
i1 C D ' i2 '
v1 A'' v2 B ''i2
'' '' ''
i1 C '' v2 D ''i2
'' '' ''
In matrix form
v1'' A '' B '' v 2 ' '
'' '' ...………. (6)
i1 C D '' i2 ''
v1' A B v2 ''
' ………… (10)
i1 C D Total i2 ''
The overall [ABCD] is equal to the product of the [ABCD] matrices of the
individual networks ABCD parameters.
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Noise figure
In addition Intermodular Distortion Products, harmonics, feedback and
heating effects all of which affect the amplifier performance.
Amplifier Power Relations
RF Source
There are various power gain definitions that are critical to the
understanding of how an RF amplifier functions.
→ For this reason, power flow relations under the assumption that the two
matching networks are included in between the source and load
impedances.
s → Source Reflection coefficient
in → Input Reflection coefficient
𝑏11 = bs + 𝑎1′ s
bS = 𝑏1′ - 𝑎1′ s
From the amplifier diagram, 𝑎1′ = in 𝑏1′
bS = 𝑏1′ - 𝑏1′ in s
bS = 𝑏1′ (1 - in s) ----- (1)
The incident power wave associated with 𝑏1′ is given as,
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|𝑏1′ |2 1 |𝑏𝑠 |2
Pinc = = = ----- (2)
2 2 | 1− 𝑖𝑛𝑠|2
The actual input power is the input terminal of the amplifier is composed
of the incident and reflected power waves.
Pin = Pinc (1 - | in|2)
1 |bs |2 ( 1− ins|2 )
Pin = ---- (3)
2 | 1− ins|2
The maximum power transfer from the source to the amplifier is achieved,
if the input impedance is complex conjugate matched (Zin = Zs*) or interms of
the reflection coefficients (in = s*).
Under maximum power transfer condition, we define the available power
PA as,
PA = Pin / in = s*
1 |bs |2 ( 1−| s∗ |2 )
PA =
2 | 1− ss∗ |2
1 |bs |2 ( 1− | s|2 )
=
2 ( | 1− | s | )2
1 |bs |2
PA = ----- (4)
2 ( | 1− | s|2 )
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S21 𝑆12 L
bS = [ 1 − ( 𝑆11 − ) s] a1 ---- (7)
1− S22 L
S21
1− S22 L
=
( 1− S22 L) ( 1− S11 s) − S12 S21 L S
1− S22 L
𝑏2 S21
= ----- (8)
𝑏𝑠 ( 1− S22 L)( 1− S11 s)− S12 S21 L S
S12 S21 S
out = S22 + ---- (11)
1− S11 S
With these two definitions, two more transducer power gain expressions
can be derived.
Substitute S12 = 0 in equation (10)
in = S11 + 0
Substitute these values in equation (9)
2
| S21 |2 ( 1 −| L | ) ( 1−| s|2 )
GT = 2 2
---- (12)
| ( 1− S22 L)| | 1 − in S |
Substitute S12 = 0 in equation (11)
out = S22
Substitute these values in equation (9)
2
| S21 |2 ( 1 −| L | ) ( 1−| s|2 )
GT = 2 2
---- (13)
| ( 1− out L)| | 1 − S11 S |
The transducer power gain is called unilateral power gain GTU which
neglects the feedback effect of amplifier (i.e.) S12 = 0.
This simplifies,
( 1 −| L |2 ) ( 1−| s|2 ) | S21 |2
GTU = ------ (14)
| ( 1− L 𝑆22 )|2 | 1 − S11 S |2
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| S21 |2 ( 1− | s|2 )
GA = ----- (15)
| 1− | out |2 |1 − 𝑆11 S |2
Further, the power, gain is defined as the ratio of the power delivered to
the load to the power supplied to the amplifier.
Power delivered to the load
G=
Power supplied to the amplifier
P𝐿
G=
P𝑖𝑛
( 1 − | L |2 ) | S21 |2
G = (1− | in|)2 | 1 − S22 L |2
---- (16)
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S22 − S ∆
| out | = | | <1 ----- (3)
1− S11 S
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Substitute the complex quantities (4) in equation (3), resulting after some
algebra in the input stability circle equation
( sR – CinR)2 – (sI – CinI )2 = 𝑟 2𝑖𝑛 ------ (8)
| 𝑆12 S21 |
Where rin = | | S11 |2 − | ∆ |2 |
----- (9)
must reside completely within the | out | = 1 circle which is shown in figure
(2.5b).
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Stabilization Methods
If the operation of a FET (or) BJT is found to be unstable in the desired
frequency range, can be made to stabilize the transistor.
| in | > 1 and | out | > 1 can be written in terms of input and output
impedances.
Zin −Z0
| in | = | | >1
Zin + Z0
Zout − Z0
| out | = | | >1
Zout + Z0
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The first approach yields very precise results and is suitable for computer
synthesis. Alternatively, the second approach is more intuitive, easier to verify
and faster for an initial design. Since it does not require complicated
computations.
Instead of the method, we can use the smith chart for rapid and relatively
precise designs of the matching circuits. The appeal of this approach is that its
complexity remains almost the same independent of the number of components
in the network.
The generic solution procedure for optimal power transfer includes the
following steps,
i) Find the normalized source and load impedances.
ii) In the smith chart plot circles of constant resistance and conductance
that pass through the point denoting the source impedance.
iii) Plot circles of constant resistance and conductance that pass through
the point of the complex conjugate of load impedance.
iv) Identify the intersection points between the circles in steps ii & iii. The
number of intersection points determines the number of possible L-
section matching networks.
v) Find the values of the normalized reactance and susceptances of the
inductors and capacitors.
Determine the actual values of inductors and cap
T and Matching Networks
The loaded quality factor of the matching network can be estimated from
the maximum nodal Qn. The addition of the third element into the matching
network produces an additional node in the circuit allows us to control the value
of QL by choosing an appropriate impedance at that node. The design of T and
pi – type matching networks is shown below.
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(a)
For (a):
Involves a series transmission line connected to the parallel combination
of load and stub. The adjustable parameters are,
Ls → length of the stub
Zos → characteristic impedance of the stub.
For (b):
Involves a parallel stub connected to the series combination of load and
transmission line. The adjustable parameters are,
lL → length of the transmission line
Zol → Characteristic impedance of transmission line
2. Double stub matching networks
Double stub devices consists of two short circuited stub connected in
parallel with a fixed length between them.
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The difference of the single stub and double stub matching networks are,
The single stub allows matching between input and load impedances.
They have a non-zero real part.
The main drawback is the variable length transmission line between stub
and input port (or) between stub and load impedance.
In double stub matching network that is overcome by second stub.
4. Explain in detail about Noise figure. [Nov/Dec-2014] (16)
Noise Figure Circles
In many RF amplifiers, the need for signal amplification at low noise level
becomes an essential system requirement. Unfortunately, designing a low
noise amplifier competes with such factor as stability and gain.
For instance, a minimum noise performance at maximum gain cannot be
obtained. It is important to develop a method that allows us to display the
influence of noise as part of the smith chart and observe trade-offs between
gain and stability.
The key ingredient of a noise analysis is the noise figure of a two-port
amplifier in the admittance form.
R𝑛
F = Fmin + | YS – Yopt |2 (or)
G𝑠
G𝑛
F = Fmin + | ZS – Zopt |2
R𝑠
1
Where Zs = is the source impedance.
Y𝑆
When using transistors, four noise parameters are known either through
datasheets from the FET or BJT manufacturers. They are,
The minimum noise figure Fmin whose behavior depends on biasing
condition and operating frequency. If the device were noise free Fmin = 1.
The equivalent noise resistance
1
Rn = of the device.
G𝑛
1
The optimum source admittance Yopt = Gopt + j Bopt = . Instead of
Z𝑜𝑝𝑡
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( 1− | s |2 )
GS can be written as GS = Y0
1+| s |2
Rn 𝑌0 | 2 opt−2 s |2
F = Fmin +
1−| s |2 ( 1+ opt )2
4 Rn 𝑌0 | opt− s |2
F = Fmin +
1−| s |2 ( 1+ opt )2
4 Rn | s− opt |2
F = Fmin +
𝑍0 ( 1−| s |2 ) ( 1+ opt )2
( F−F𝑚𝑖𝑛 ) ( 1− | s |2 ) ( 1+ opt )2
| s - opt |2 = 4Rn
𝑍0
| s - opt |2 = QK (1 - | s |2 )
Where,
F − F𝑚𝑖𝑛
QK = | 1 + opt |2 ( 4Rn
)
Zo
Let F = FK
F𝐾 − F𝑚𝑖𝑛
QK = | 1 + opt |2 ( 4Rn
)
Zo
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| s - opt |2 = QK – QK | s |2
s2 – 2 s opt + opt2 = QK – QK | s |2
s2 – 2 s opt + opt2 + QK | s |2 = QK
| s |2 [ 1 + QK] – 2 s opt + | opt |2 = QK
After some algebra
opt Q2𝐾 + Q𝐾 ( | − opt |2 )
| s − | 2=
1+ Q𝐾 ( 1+ Q𝐾 )2
This is the circle equation in standard form that can be displayed as part
of the smith chart.
| s – dFK |2 = ( SR – d FKR )2 + ( SI – 𝑑FKI )2 = rFK2
The circle centre location dFK denoted by the complex number.
opt
dFK = dFKR + j dFKI =
1+ Q𝐾
Q2𝐾 + Q𝐾 ( 1− | opt |2
rFK2 =
( 1 + Q𝐾 )2
2
√Q𝐾 + Q𝐾 ( 1− | opt |2 )
rFK =
1 + Q𝐾
The minimum noise figure is obtained for FK = Fmin, which coincides with
the location dFK = opt and radius rFK = 0.
All constant noise circles have their centres located along a line drawn
from the origin to point opt.
5. Explain in detail about Frequency response and quality factor. (16)
Frequency Response and Quality Factor
The frequency responses of these two matched networks in terms of
input reflection coefficient.
Zin − ZS
in =
Zin + ZS
Vout
and the transfer function H =
VS
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Qn
QL =
2
This result is true for any L-type matching network is usually estimated
as simply the maximum nodal quality factor.
To simplify the matching network design process even further, we draw
constant – Qn contours in the smith chart. The below figure 2 shows such
contours for Qa valued 0.3, 1, 3, and 10.
Rearranging the above equation the circle equation is found in the form.
1 1
i2 + ( r + )2 = 1 +
Qn Qn2
Where the ‘+’ sign is taken for positive reactance x, and the ‘-‘sign for
negative reactance x.
With these constant Qn circles in the smith chart it is possible to find the
loaded quality factor of an L-type matching network by simply reading the
corresponding Qn and dividing it by 2.
In Many practical applications the quality factor of a matching network is
of importance. The L-type matching networks provide no control over the value
of Qn and we must either accept (or) reject the resulting quality factor. By
choosing the values of Q that affect the bandwidth behavior of the circuit. Thus
we introduce a third element in the matching network. The addition of this third
element results in either the ‘T’ (or) Pi ( ) network.
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6. Problems
1) An RF amplifier has the following S- Parameter:
S11 = 0.3 < - 700; S21 = 3.5 < 850; S12 = 0.2 < - 100; S22 = 0.4 < - 450
Furthermore, the input side of the amplifier is connected to a voltage
source with VS= 5 V < 00 and source impedance ZS = 40Ω. The output is utilized
to drive an antenna which has an impedance of ZL = 73Ω. Assuming that the
S-Parameters of the amplifier are measured with reference to a Z0 = 50Ω
characteristic impedance. Find the following quantities.
a) Transducer gain GT, unilateral transfer gain GTU, available gain GA,
operating power gain G and
b) Power delivered to a load PL, available power PA and incident power to
the amplifier Pinc. [Nov/Dec-2011]
Solution:
Zs − Z0
Source reflection coefficient s =
Zs + Z0
40−50
=
40+50
= -0.111
ZL − Z0
Load reflection coefficient L =
ZL + Z0
73−50
=
73+50
= 0.187
S21 S12 L
Input impedance in = S11 +
1− S22 L
(0.182+0.677 j)(0.187)
= 0.103 – 0.282 j +
1−(0.053−0.053 j)
(0.947+0.053 j)(0.103−0.282 j)+(0.182+0.677 j)(0.187)
=
0.947+0.053 j
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0.112−0.262 j+0.034+0.127 j
=
0.947+0.053 j
0.146−0.135 j
=
0.947+0.053 j
10.305+3.49 j |2 (1−(−0.111 )2 )
= | 1−| 0.265−00.265−058 j |2 | |1−(0.103−0.282 j )(−0.111) |2
12.273 x 0.988
=
0.802 x 1.024
12.126
=
0.821
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GA = 14.76
GA = 14.76 (or) 11.69 dB
( 1−|L |2 ) | S21 |2
G = | 1−|in |2 | 1− S22 L |2
( 1−| 0.187 |2 ) | 0.305+3.49 j |2
= | 1−| 0.146−0.151 j |2 | | 1−(0.283−0.283 j )(0.187)|2
0.965 x 12.273
=
0.956 x 0.899
11.84
=
0.859
= 13.78
G = 13.78 (or) 11.39 dB
1 | bs |2 √Z0
Pinc =
2 | 1− in S |2
where bS =
ZS + Z0
√s
1 Z0 | VS | 2
= x
2 ( ZS − Z0 )2 | 1− in S |2
50 x 52
=
2 (40+50 )2 |1−(0.146−0.151 j )(−0.111)|2
1250
=
16200 x 1.033
= 0.0747 w
Pinc = 74.7 mω (or) 18.73 dbM
1 | bs |2 1 Z0 | √S |2
PA = =
2 | 1− S |2 2 ( ZS − Z0 )2 ( 1−| S )2
1 50 x 52
=
2 902 | 1−(−0.111)2 |
= 0.0781
PA = 78.1 mω (or) 18.92 dBm
PL = PA GT
= 78.1 x 10-3 x 12.56 = 0.9809
Pl = 980.9 mω (or) 29.91 dbM
2. Investigate the stability regions of a transistor whose S – parameters
are recorded as follows [Nov/Dec-2015]
S11 = 0.7 < - 700; S12 = 0.2 < - 100
S21 = 5.5 < 850; S22 = 0.7 < - 450
Solution:
S11 = 0.239 – 0.658 j
S12 = 0.197 – 0.035 j
S21 = 0.479 + 5.48 j
S22 = 0.495 – 0.495 j
Compute values of K, ||, cin, rin, cout, vout
|−|𝑆11 |2 −| 𝑆22 |2 +|∆ |2
K =
2 | 𝑆12 | | 𝑆21 |
= S11 S22 – S12 S21
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= 1.15
K = 1.15
∗ Δ )∗
( S11 S22
cin = | S11 |2 −|Δ |2
[ (0.239−0.658j)−(0.495+0.495j)(−0.491−1.507 j) ] ∗
=
10.239−0.658 j |2 −| 1.58 |2
(−0.264+0.331 j )∗
=
−2.022
rin = 0.54
∗ Δ )∗
( S22 S11
cout = | S22 |2 −|Δ |2
rout = 0.54
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2. (i) Explain the construction and working of four port circulator with
reference to Faraday rotation principle.[Nov/Dec-2013](8)
Principle
The rotation of the direction of E field of a linearly polarized wave passing
through a magnetized ferrite medium is known as faraday rotation.
Circulator is a multi-port non-reciprocal ferrite device, where the waves
can flow from one port to next immediate port in one direction only.
Symbol
Operation:
i) During input waves from Port 1,
An input waves at port 1 is splited into two equal amplitude & inphase
waves in the collinear arms b & d of the magic tee T1 , added up and appear
from port 2 of the magic tee T2.
ii) During input waves from Port 2,
A wave at port 2 will be splited into two equal amplitude & out of phase
waves in the collinear arms a & c of the magic tee T2 due to the presence of
180o phase shifter. These out of phase waves added up and appear from port
3 of the magic tee T1.
iii) During input waves from Port 3,In the above similar manner, an input waves
at port 3 will appear from port 4.
Applications
1. It is used as duplexer in radar antenna.
2. It is used in parametric amplifiers and tunnel diode.
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Scattering matrix
For an ideal lossless matched circulator
|S11| = |S22| = |S33| = |S44|=0. Hence
Operation
i) During input waves from Port 1 to Port 2,
The twist introduces 45o phase shift in anti-clockwise direction. Then
ferrite rod introduces 45o phase shift in clockwise direction. Therefore output
waves total phase shift will be 0o.
ii) During input waves from Port 2 to Port 1,
The ferrite rod introduces 45o phase shift in anti-clockwise direction. Then
it enters twist, it can be absorbed by the resistive card since the wave already
having 45o phase shift. So no output wave enters into port 1.
Scattering matrix
For an ideal lossless matched isolator
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Applications
1. It is used as a reflected wave protector for any microwave sources.
2. Hence it is used to improve the frequency stability of microwave
sources.
3. (i) Describe in detail about directional coupler and also the operation of
a 2-hole directional coupler. [Nov/Dec-2012](10)
Directional Coupler
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It should be noted that port2, port3, and port4 are terminated in their
characteristic impedances. The coupling factor is a measure of the ratio of
power levels in the primary and secondary lines. Hence if the coupling factor is
known, a fraction of power measured at port4 may be used to determine the
power input at port
1. This significance is desirable for microwave power measurements because
no disturbance, which may be caused by the power measurements, occurs in
the primary line.
2. The directivity is a measure of how well the forward traveling wave in the
primary waveguide couples only to a specific port of the secondary waveguide.
An ideal directional coupler should have infinite directivity. In other words, the
power at port 3 must be zero because port2 and port4 are perfectly matched.
3. Actually, well-designed directional couplers have a directivity of only 30 to 35
dB
S11=S22=S33=S44=0
As noted, there is no coupling between port 1 and port 3 and between port 2
and port 4. Thus
S13=S31=S24=S42=0
Consequently, the S matrix of a directional coupler becomes
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Operation
1) A portion of power traveling from port 1 to port 2 is coupled to port 4 but not
to port 3.
2) A portion of power traveling from port 2 to port 1 is coupled to port 3 but not
to port 4.
4) A portion of the power incident on port 4 is coupled to port 1 but not to port
2.
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A fraction of the wave energy entered into port 1 passes through the holes
and is radiated into the secondary guide as the holes act as slot antennas.
The forward waves in the secondary guide are in the same phase,
regardless of the hole space and are added at port 4.
The backward waves in the secondary guide (waves are progressing from right
to left) are out of phase by (2L/ A8)27T rad and are cancelled at port 3.In a
directional coupler all four ports are completely matched. Thus the diagonal
elements of the S matrix are zeros.
Application
It is used to combining or coupling and also splitting power in a waveguide
system.
(ii) Explain the construction and working of varactor diode with neat
diagram. [May/June-2014](6)
The varactor diode is a semiconductor, voltage dependent variable
capacitor diode. This special diode which is made for the application utilization
of voltage-capacitance variable property hence it is called varactor diode or
Varicaps (or) Voltage cap. It is operated under reverse biased conditions so as
to yield a variable junction capacitance.Varactor diode is useful for MW
oscillations or amplification.
Photo Symbol
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(a) and (b) shows varactor diode under forward bias and under reverse bias
respectively.
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Photo Symbol
Construction
a) Figures consists of
• N+-type substrate
• N-type semiconductor such as Ge,Si,GaAs,AlAs and etc.
• P-type semiconductor such as GaAs, GaSb and etc.
• PN semiconductor junction
• Anode and cathode
b) Construction are
• A Gunn diode is constructed as shown in figure1.2(a) and (b).
• In this figure n+ denotes heavily doped n-semiconductor.
• The operation under forward bias and reverse bias shown in the figure
below
shows Gunn diode under forward bias and under reverse bias
respectively.Working under transferred electron effect or Gunn effect.
Gunn effect
It states that some materials like GaAs exhibit, when biased above a
threshold value of the electric field, the electrons in the lower-energy band will
be transferred into the higher-energy band as shown in figure below.
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• This behavior is called transferred electron effect or Gunn effect and the device
is also called transferred electron device (TED) or Gunn diode. It is also called
Ridley - watkins - Hilsum (RHW) two valley theory
V-I characteristics curve
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Construction
a) Basic structure consists of
+
N - type substrate
N - type semiconductor such as Ge, Si, GaAs, AlAs and etc.
+
P - type semiconductor such as GaAs, GaSb and etc.
PN semiconductor junction
Anode and cathode
b) Internal structure consists of
+
In this figure n denotes heavily doped n-semiconductor.
Doping profile of step recovery diode is shown in figure below.
+ +
Figure shows that its p -type and n -type materials are doped more
heavily at the component terminals than at the junction.
• This significantly reduces the time required for the component to switch from
on to off, and vice versa.
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• The operation under forward bias and reverse bias are shown in figure.
Applications
• Typical switching time for an IMPATT diode is in the order of picoseconds
range.
• Hence it is used for ultra-high frequency switching applications.
• This diode are also useful in frequency multipliers.
Advantages
• Switching time for an IMPATT diode is in the order of picoseconds range.
• Low noise, high speed and low power consumption.
Disadvantages
• Higher cost
• Low output voltage.
• No isolation between input and output.
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2. Insertion Loss
Insertion Loss (IL) is the Transmission Loss through the physical
structure of a PIN diode switch. In the forward biased case (the ON state), large
values of bias current plus microwave current may flow through the switch
structure, causing significant Ohmic Loss. In the reverse bias case (the OFF or
Isolation state), only small values of leakage current flow through the switch, so
the reverse bias loss is small.
If the switch is mechanically and thermally designed properly, Ohmic
Losses and Thermal Dissipation are minimized and Insertion Loss is relatively
low (IL < 0.25 dB).
Insertion Loss is a particularly critical parameter for the Communications
System designer. Insertion Loss absorbs signal power, causing the system’s
Noise Figure to increase by the amount of the Insertion Loss.
6. Write short notes on [Reg-2013]
1. Terminations
2. Power dividers
3. Stub and quarter wave transformer
1. Terminations:
A termination is a one-port device which absorbs all the incident power,
never radiate and reflects. Its only purpose is to absorb all the incident energy
without causing standing waves. It matches, its impedance with the
characteristic impedance of a given transmission line. It is attached to a certain
terminal of a device to absorb the transmitted power or to establish reference
impedance at that terminal. It is equivalent to terminating the line with its
characteristics impedance.
Types of termination:
(i) Matched load
It provides termination and absorbs all the incident power. It is also
equivalent in terminating the line by its characteristic impedance. This load is
called matched load or matched termination.
(ii) Variable short-circuits
In waveguide form, it consists of short-circuit, usually a resistive card. It
reflects all the incident power. The sliding load motion controls the high degree
of precision through extremely accurate machining techniques. Termination
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To evaluate this for βl = (2π/λ)(λ/4) = π/2, we can divide the numerator and
denominator by tan βl and take the limit as βl → π/2 to get
In order for Γ = 0,we must have Zin = Zo ,which yields the characteristic
impedance Z1
as
The quarter-wave transformer is a useful and practical circuit for
impedance matching and also provides a simple transmission line circuit that
further illustrates the properties of standing waves on a mismatched line.
7. Explain MMIC in detail. [May/June-2014] (16)
Like lower-frequency integrated circuits, monolithic microwave integrated
circuits(MMICs) can be made in monolithic or hybrid form. In a monolithic circuit,
active devices are grown on or in a semiconducting substrate, and passive
elements are either deposited on the substrate or grown in it. In the hybrid circuit
active devices are attached to a glass, ceramic, or substrate, which contains
the passive circuitry.
MMIC FABRICATION TECHNIQUES
Monolithic microwave integrated circuits (MMICs) can be fabricated by
using different techniques such as diffusion and ion implantation, oxidation and
film deposition,epitaxial growth, lithography, etching and photoresist, and
deposition.
Diffusion and ion implantation
Diffusion and ion implantation are the two processes used in controlling
amounts of dopants in semiconductor device fabrications. The process of
diffusion consists of diffusing impurities into a pure material in order to alter the
basic electronic characteristics of the pure material. Ion implantation is used to
dope the substrate crystal with high-energy ion impurities.
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6. Etching: Open two windows above the two n+ -type diffused regions by using
the photo etching method.
7. Metallization: Now see that aluminum metallization is carried out over the
entire surface of the device.
8. Etching: Finally, etch away the unwanted metal and attach the metal contacts
to the diffused gate, drain, and source regions.
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Reflex klystron
→ The reflex klystron is an oscillator with a built to feedback mechanism.
→ The repeller electrode is a negative potential and sends the bunched
electron beam back to the resonator cavity. This provides a positive
feedback mechanism which support oscillations.
→ Due to dc voltage (V0) in the cavity circuit RF noise is generated in the
cavity. This electromagnetic noise field in the cavity act as cavity resonant
frequency.
→ When the oscillation frequency is varied, the resonant frequency of cavity
and the feedback path phase shift must be readjusted for a positive
feedback.
Applegate diagram
→ When the gap voltage is as positive peak, electron passing at this moment
is called early electron. This electron is accelerated towards repeller and
travels a distance which is large comparatively.
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The same electron is forced back to the cavity z = d and time t 2 by the
retarding electric field E.
Vr + V0 + V1 sin (ωt )
E= ----- (3)
L
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d2 z
-e E = m Vr → magnitude of repeller voltage.
dt2
dz
If t = t1 , = v (t1) = K1 then
dt
Vr + V0 t t
z = -e [ ] ∫t (t − t1 ) dt + v (t1) ∫t dt
mL 1 1
t
Vr + V0 t2
= -e [ ] [ ] V(t1) (t – t1) + K2
mL 2
Vr + V0
= -e [ ] (t –t1 t1)2 + v (t1) (t – t1) + K2 ---- (8)
2 mL
At t = t1, z = d = K2 then
− e ( Vr + V0 )
z = (t – t1)2 + v (t1) (t – t1) + d ---- (9)
2 mL
→ The electron leaves the cavity gap at z = d and time t 1 with a velocity of
v(t1) and due to repeller negative potential returns to the gap z =d and time
t2 then at t = t2 , z = d.
( V r + V0 )
0 = -e (t2 – t1)2 + v (t1) (t2 – t1) ----- (10)
2 mL
Transit time
The round trip transit time in the repeller region is given by
2 (velocity)
T’ = ----- (11)
acceleration
The factor 2 in the numerator arises because of the t0 and from journey
of electrons.
2 v (t1 ) 2 mL
T’ = d2 Z
= (t2 – t1) = . v (t1) ----- (12)
e ( Vr + V0 )
dt2
Now the negative sign is not taken as electron bunch travels in the
reverse direction.
Substitute equation (2) in (12)
β1 V1 θg
T’ = T0′ [ 1 + sin (ωt1 − ) ] ----- (13)
2 V0 2
The round trip transit time of the center of the bunch electron
2 mL v0
T0′ = ----- (14)
e ( Vr + V0 )
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βi V1 θg
ω (t2 – t1) = ω T0′ + ω T0′ sin (ωt1 − )
2 V0 2
θg
ωT0′ = θ′0 + X’ sin (ωt1 − ) ---- (15)
2
The round trip at transit angle of the center of the bunch electron
θ′0 = ωT0′ ---- (16)
The bunching parameter of the reflex klystron oscillator
βi V1
X’ = θ′0 ----- (17)
2 V0
Output power
→ The maximum amount of kinetic energy can be transferred from the
returning electrons to in the cavity walls.
→ For a maximum energy transfer the round trip transit angle is given by
1
ω (t2 – t1) = ωT0′ = ( n − ) 2π ----- (18)
4
π
= N 2π = 2π n - ----- (19)
2
i2 = - βi I2
= 2 I0 J1 (X’) cos (ωt2 – θ′0 ). βi ----- (21)
The magnitude of fundamental component
I2 = 2 I0 βi J1 (X’ ) ----- (22)
The dc power supplied by the beam voltage V0
Pdc = V0 I0 ----- (23)
The ac power delivered to the load
V1 I2
Pac = = V1 I0 βi J1 (X’ ) ----- (24)
2
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θ′0
X’ = βi Vi
2 𝑉0
𝜋
where θ′0 = ωT0′ = 2πn –
2
𝜋
2 v0 X’ = βi V1 ( 2πn − )
2
𝑉1 2𝑋′
= 𝜋
𝑉0 𝛽𝑖 ( 2πn− )
2
2𝑋 ′ 𝑉0
V1 = 𝜋 ----- (25)
𝛽𝑖 ( 2πn− )
2
Efficiency
𝑃𝑎𝑐 2𝑋 ′ 𝑉0 𝐼0 𝐽1 (𝑋 ′ ) 1
η = = 𝜋 x
𝑃𝑑𝑐 2πn − 𝑉0 𝐼0
2
2𝑋 ′ 𝐽1 (𝑋 ′ )
= 𝜋 ----- (27)
2πn −
2
Maximum efficiency
→ The factor X’ J1 (X’) reaches a maximum value of 1.25 at X’ = 2.408 and
J1 (X’) = 0.52
3
The maximum efficiency is obtained when n = 2 or 1 mode
4
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(TWTA). [Nov/Dec-2015](16)
Traveling Wave Tube Amplifier (TWTA)
→ A TWTA circuit uses a helix slow wave non resonant microwave guiding
structure and thus a broadband microwave amplifier.
Helix Traveling Wave Tube
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Magnet
→ The magnet produces an axial magnetic field to prevent spreading of the
electron beam as it travels down the tube.
→ Need of slow – wave structure (helix tube).
Slow wave structures are special circuits that are used in microwave
velocity in a certain direction. So that the electron beam and the signal wave
can interact.
3. Derive the equation of velocity modulated wave and discuss the
concept of bunching effect in two cavity klystron. [May/June-2014]
(16)
Two cavity Klystron Amplifier
→ A two cavity klystron Amplifier is a velocity modulated tube in which the
velocity modulation process produces density modulation process of
electrons. It consists of two cavity bunches (input) & catcher (output)
cavity. The separation between bunches & catcher grids is called drift
space.
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→ The electron beam passing the positive half cycle of the gap voltage under
in velocity. In negative half cycle the gap voltage undergo decrease in
velocity. As the electron gradually lunch together so they travel down the
drift space.
→ The first cavity acts as the buncher and velocity modulates the beam.
Thus the electron beam is velocity modulated to form bunches or
undergoes thereby modulation in accordance with the I/P RF single cycle.
→ The ac current on the beam is such that the level of excitation of the
second cavity is much greater than the buncher cavity.
→ If desired a portion of the amplified output can be fed back to the
regenerative manner to obtain self-sustained oscillation.
→ The maximum bunching cavity occur between the second cavity grids
during its retarding phase, thus the kinetic energy is transferred from the
electron to the field of the second cavity.
Velocity modulation Process
→ When electrons are first accelerated by the high dc beam voltage V 0
before entering the buncher grids, their velocity v0 is uniform.
2e V0
vo = √ = 0.593 x 106 √𝑉0 m/s ----- (1)
m
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A – B = ωt0
ωd
A + B = ωt0 + θg = ωt0 +
V0
θg
Sin ( ) θg
2
VS = V1 θg Sin (ωt 0 + ) ----- (7)
2
2
θg
θg Sin ( )
2
VS = V1 βi Sin (ωt 0 + ) β1 = θg
2
2
where β1 – buncher cavity beam coupling co-efficient of the input cavity
gap.
→ Increasing the θg decreases the coupling between the electrons beam &
buncher cavity, (i.e.) the velocity modulation of the beam for a given
microwave signal is decreased.
→ After velocity modulation the exit velocity from the buncher gap.
2e θg
v(t1) = √ m [V0 + βi V1 sin (ωt 0 + 2
)]
2eV0 βi V1 θg
v(t1) = √ [1 + sin (ωt 0 + )] ----- (8)
m 2V0 2
Thus the electrons in the beam are velocity modulated by the input RF
βi V1
signal with depth of velocity modulation (m) = . Since βiV1 << V0, the
V0
binormal expansion of equation (8).
βi V1 θg
v(t1) = V0 [1 + sin (ωt 0 + )] ----- (9)
2V0 2
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βi V1 θg
v(t1) = V0 [1 + sin (ωt1 + )] ----- (10)
2V0 2
Bunching process
→ The effect of bunching process produces bunching of electron beam (or)
current modulation.
→ The electron that pass the buncher cavity during the positive half cycles
of microwave input voltage VS travel faster than the electrons that passed
the gap when VS = 0.
→ During the negative half cycle, VS travel slower than the electrons that
passed the gap when VS = 0.
Bunching distance
Bunching distance from the buncher grid to the location of dense electron
bunching for the electron at tb is
∆ L = v0 (td – tb) ----- (11)
π π π
where tC = tb + ; t b = ta + ; ta = tb –
2ω 2ω 2ω
From equation (9) (or) equation 10 the maximum & minimum velocities are
βi V1
vmin = V0 (1 – ) ----- (14)
2 V0
βi V1
vmax = V0 (1 + ) ----- (15)
2 V0
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π V0 βi V1 V0 βi V1 π
= v0 (td – tb) + v0 − (td – tb) −
2ω 2 V0 2 V0 2ω
----- (16)
Substitute equation (15) in equation (13)
π
∆L = Vmax ((t d – t b ) − )
2ω
V0 π V0 βi V1 V0 βi V1 π
= v0 (td – tb) + [ − + (t d − t b ) − ]
2ω 2 V0 2 V0 2ω
----- (17)
Applegate diagram
→ It represents the internal operation of two cavity klystron by distance time
plot. It include velocity modulation process, bunching & energy transfer
etc.
From equation (16) & equation (17), the necessary condition for those
electrons at ta, tb and tc to meet at the same distance ∆L is
V0 π V0 βi V1 V0 βi V1 π
- (t d − t b ) − =0 ------ (18)
2ω 2 V0 2 V0 2ω
V0 π V0 βi V1 V0 βi V1 π
− + (t d − t b ) − =0 ----- (19)
2ω 2 V0 2 V0 2ω
Equating equation (18) & equation (19)
V0 π V0 βi V1 V0 βi V1 𝜋
(t d − t b ) −
2ω 2 V0 2 V0 2𝜔
− V0 π V0 β i V1 V0 βi V1 𝜋
= + (t d − t b ) −
2ω 2 V0 2 V0 2𝜔
V0 π V0 π V0 βi V1 V0 βi V1
+ = (t d − t b ) − (t d − t b )
2ω 2ω 2 V0 2 V0
V0 π V0 βi V1
= (t d − t b )
ω 2 V0
π V0
(t d − t b ) = ----- (20)
ω βi V1
Substitute equation (20) in equation (11) we get the expression for min
distance at which maximum bunching occur
∆L = V0 (td – tb)
V0 π V0
∆L = ----- (21)
ω βi V1
Maximum bunching
→ Now, the spacing between the buncher & catcher cavities in order to
achieve the maximum degree of bunching.
→ The transit time for an electron to travel at distance of L
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L
T = t2 – t1 = ----- (22)
V (t)
Substitute equation (10) for V(t) in equation (22) and use the binomial
expansion.
(1 + x)-1 = 1 – x for | x | << 1.
L
= β V θg
V0 [ 1 + i 1 sin (ωt1 − ) ]
2 V0 2
βi V1 θg
T = T0 [ 1 + sin (ωt1 − ) ] ----- (23)
2 V0 2
L
Where [ @ T0 = ] is the dc transit time.
V0
→ Bunching parameter & DC Transit angle
In terms of radians, the equation (23) becomes
ω T0 βi V1 θg
ωT = ωt2 – ωt1 = ωT0 – sin (ωt1 − )
2 V0 2
θg
= θ0 – X sin (ωt1 − ) ----- (24)
2
ωL
dc transit angle between cavities θ0 = = 2π N ----- (25)
V0
Where, N is the number of electron transit cycle in the drift space.
The bunching parameter of a klystron.
βi V1
X= θ0 ----- (26)
2 V0
Current modulation
Beam current in catcher cavity
→ The bunched beam current at the catcher cavity is a periodic wave form of
2π
period about dc current.
ω
i2 = I O + 2 IO Jn (nX) Cos [ωn (t2 – – T0)] ----- (27)
IO → dc beam
n = 1 current in buncher cavity.
The klystron is generally tuned in fundamental ac component of current
given by
If = 2 IO J1 (X) cos (ωt2 - - T0) ----- (28)
The fundamental ac component of the beam current at the catcher cavity has a
magnitude
If = 2 IO J1 (X) ----- (29)
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Output Power
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V2 = β0 I2 Rsh
V2 β0 I2 R𝑠ℎ β0 I2 R𝑠ℎ
AV = | | = = β0 θ0
V1 V1 2 V0 X
β20 θ0 J1 (X) V0
= . . Rsh (R0 = is the dc beam resistance)
R0 X I0
G𝑚
Av = Gm. Rsh, (or) .
G𝑠ℎ
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e
Where → charge to mass ratio of electron = 1.759 x 1011 C/kg.
m
1
0= ωc r2 + constant
2
1
@ Constant = − ωc a2 ---- (5)
2
The electron move in direction perpendicular to the mag field the kinetic
energy of the electron is given by
1
mv2 = eV
2
2eV
v2 =
m
dr 2 r dϕ 2 2eV
( ) + ( ) = ------ (7)
dt dt m
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(7) becomes
dϕ ω𝑐 a2
= [1− ] ----- (8)
dt 2 b2
dϕ 2 2 e V0
(r ) = ----- (9)
dt m
m
½
( 8 V0 )
e
B𝑜𝑐 = 2
----- (10)
a
b (1− 2 )
b
----- (11)
This equation is called as Hull cut off magnetic equation.
→ The magnetic field required to return electron back to cathode just grazing
of the anode is called as cut-off magnetic field (or) cut-off magnetic flux
density.
→ If B0 > B0C for a given V0, the electron will not reach the anode.
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dϕ
ωc = β0 ----- (20)
dt
ω0 C
Ql = | at ω0 ----- (3)
Gr + Gl
Circuit efficiency
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G𝑙 1 1
ηc = = G = Qex ----- (4)
G𝑙 + Gr 1+ r 1+
G𝑙 Q𝑢𝑛
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Hartree condition
The Hull cutoff condition determines the anode voltage or magnetic field
necessary to obtain nonzero anode current as a function of the magnetic
field or anode voltage in the absence of an electromagnetic field.
The Hartree condition can be derived as follows and as shown in Fig.
The electron beam lies within a region extending a distance h from the
cathode, where h is known as the hub thickness. The spacing between
the cathode and anode is d.
The electron motion is assumed to be in the positive y direction with a
velocity
Vy = - Ex /Bo = 1 dV/ Bo dx
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In the π-mode operation, the electric fields in every other cavity are in
phase, and so they couple in the same direction into the surrounding cavity.
The surrounding coaxial cavity stabilizes the magnetron in the desired π
-mode operation.
In the desired TEo11 mode, the electric fields follow a circular path
within the cavity and reduce to zero at the walls of the cavity.
Current flow in the TEo11 mode is in the walls of the cavity in circular paths about
the axis of the tube.
The undesired modes are damped out by the attenuator within the inner
slotted cylinder near the ends of the coupling slots.
The tuning mechanism is simple and reliable.
As the straps are not required, the anode resonator for the coaxial
magnetron can be larger and less complex than for the conventional strapped
magnetron.
Thus cathode loading is lower, and voltage gradients are reduced.
Voltage Tunable Magnetron
It is a broadband oscillator with frequency changed by varying the
applied voltage between the anode and sole.
As shown in Fig. the electric beam is emitted from a short cylindrical
cathode at one end of the device.
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Electrons are formed into a hollow beam by the electric and magnetic
forces near the cathode and then are accelerated radically outward from
the cathode.
The electron beam is then injected into the region between the sole and
the anode.
The beam rotates about the sole at the rate controlled by the axial
magnetic field and the de voltage applied between the anode and the
sole.
The voltage-tunable magnetron uses a low-Q resonator, and its
bandwidth may exceed 50% at low-power levels.
In the π-mode operation, the bunch process of the hollow beam occurs
in the resonator, and the frequency of oscillation is determined by the
rotational velocity of the electron beam.
In other words, the oscillation frequency can be controlled by varying the
applied de voltage between the anode and sole.
Power output can be adjusted to some extent through the use of the
control electrode in the electron gun.
At high-power levels and high frequencies, the bandwidth percentage is
limited. However, at low-power levels and low frequencies, the bandwidth
may approach 70%.
6. Explain the concept of Backward wave crossed field amplifier and
oscillator.[Reg-2013] (8/16)
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PART-B
1. Write the operation and application of
a. VSWR meter b. Power meter (16) [Reg-2013]
A VSWR meter is a sensitive high gain, high Q, low noise voltage
amplifier tuned normally at a fixed frequency of 1 kHz at which the microwave
signal is modulated. The input to the VSWR meter is the detected signal output
of the microwave detector and the output of the amplifier is measured with a
square law calibrated voltmeter which directly gives the VSWR READING
Vmax/Vmin for an input of Vmin, after the reading is adjusted to unity VSWR for an
input corresponding to to Vmax as shown in figure 5.1. A gain control can be
used to adjust the reading to a desired value. The overall gain is nearly 125 dB
which can be altered in steps of 10dB.
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For VSWR is between 3.2 and 10, bottom of SWR NORMAL is used.
When the VSWR is less than 1.3 a more accurate reading can be taken
by selecting the EXPANDED scale, graduated from 1 to 1.3.
The third scale at the bottom is graduated in dB.
b. Power meter
A microwave power meter is a device which measures the electrical
power at microwave frequencies. A microwave power meter will consist of a
measuring head which contains the actual power sensing element, connected
through a cable to the meter proper which displays the power reading. The head
is referred to as a power sensor or mount. Different power sensors can be used
for various frequencies or power levels. Several power sensors can be used for
various frequencies or power levels. Several power sensor mount contain
electronics to create a digital output and can be connected through a USB port
into a PC which acts as the power meter.
Microwave power meters have a wide bandwidth that are not frequency
selective .A spectrum analyser is used to measure the power of a specific
frequency component in the presence of other signals at different frequencies.
Power sensor
Thermistors
Thermocouples Power meter Display
Diode detectors
Substituted DC or
Low frequency equivalent
Block diagram of power meter
Sensor technologies:
Thermal sensor
It is further divided into two main categories, thermocouple power sensors
and thermistor based power sensors.
Thermal sensors depend on the process of absorbing RF and microwave
signal energy, and sensing the resulting heat rise. Therefore they respond to
true average power of the signal, whether it is pulsed, continuous wave AM/FM
or any other complex modulation.
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is the frequency that beats with the L.O. frequency and produces a frequency
difference equal to IF. Thus
f if = fs- f0; fs> f0
= f0- fs ; fs< f0
The bandwidth and hence resolution of the spectrum analyser is
determined by the bandwidth of IF amplifier.
2. Network analyser
The use of the slotted line for microwave measurements has the
disadvantage that the amplitude and phase measurements are limited to single
frequencies. Therefore, broadband testing is very time consuming and
manpower cost is very high.
A network analyser measures both amplitude and phase of a signal over
a wide frequency range within a reasonable time. The basic measurements
involve an accurate reference signal which must be generated with respect to
which the test signal amplitude and phase are measured. A schematic block
diagram of a complex network analyser is shown in Figure 5.3.
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For a two port-network, Fig 5.6 shows the test set up for S-parameters
S11 and S21, measurements using a network analyser Sii and Sij are computed
from the measured output of the dual directional couplers as follows:
S11 = V2/V1 (ϕ2- ϕ1)
S21= V3/V1 (ϕ3- ϕ1)
For S22 and S12 the signal source and the load position are interchanged, so that
S22= V3/V4 (ϕ3- ϕ4)
S12= V2/V4 (ϕ2- ϕ4)
Therefore, from the measurements of amplitude and phase from the ports
of the dual directional couplers, S-parameters of a two-port network can be
determined.
Figure 5.6 S parameter test set (a) S11 and S21 (a) S22 and S12
3. How do you measure the following?
a) Power measurement [Apr/May-2015]
b) VSWR measurement [Nov/Dec-2014] (8/16)
a) Power measurement
Power is defined as the quantity of energy dissipated or stored per unit
time. The range of microwave power is divided into three categories- low power
(less than 10 mW), medium power (from 10 mW to 10W) and high power
(greater than 10 W). The average power is measured while propagation in a
transmission medium and is defined by.
1 𝑛𝑇
Pav =
𝑛𝑇
∫0 𝑣 (𝑡 ) 𝑖(𝑡)𝑑𝑡
where T is the time period of the lowest frequency involved in the signal and n
cycles are considered. For a pulsed signal
1 𝜏
Ppeak = ∫0 𝑣 (𝑡 ) 𝑖(𝑡)𝑑𝑡
𝜏
Pav = Ppeak * Duty cycle
Duty cycle = pulse width * p.r.f= τfr = τ/T< l
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where τ is the pulse width, T is the period , and fr is the pulse repetition
frequency.
The most convenient unit of power at microwaves is dBm, Where
P(mW)
P(dBm)= 10 log
1mW
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For any change in temperature if the voltage changes by ΔV, the change
in RF power is
Pav + ΔP = (Va + ΔV)2 /4R - (V2 + ΔV)2/4 R
(𝑉1 −𝑉2 )(𝑉1 −𝑉2 +2ΔV)
Pav+ ΔP = ---------------------------- (1)
4𝑅
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𝑆𝑚𝑎𝑥 − 1
ρmax = = | ρL | + | ρs |
𝑆𝑚𝑎𝑥 + 1
𝑆𝑚𝑖𝑛 − 1
ρmin = = | ρL | - | ρs |
𝑆𝑚𝑖𝑛 + 1
The above equations can be solved for ρL and ρs, from the measurements
of Smax and Smin on the line. Then the residual VSWR.
1+ | ρs |
Ss =
1− | ρ𝑠 |
High VSWR (S > 20)
For high VSWR, the difference of power at voltage maximum and voltage
minimum is large, so it would be difficult to remain on the detector’s square-law
region at maximum positions when the diode current may exceed 20 μ A.
Therefore, VSWR measurement with a VSWR meter calibrated on a square-
law basis (I=kV2) will be inaccurate. Hence double minimum method as shown
in Fig 5.13 is used where measurements are carried out at two positions around
a voltage minimum point.
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If πΔx<<𝜆𝑔 ,
𝟏
= 𝛑𝚫𝐱
𝒔𝒊𝒏 ( )
𝝀𝒈
𝝀𝒈
=
𝛑𝚫𝐱
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To ease the calculation. Smith chart (Fig. 5.18) can be used to determine
Zl, from the measurements of S and dmin as follows, where load VSWR S = 2.
and dmin/λg = 0.2. say.
l. Draw the VSWR circle centred at 0 (r = l) with radius cutting the r-axis
at S = 2.
2. Move from the short circuit load point A on the chart along the
wavelengths toward load scale by distance dmin/λg to B and join OB.
3. The point of intersection between the line OB and the VSWR circle
gives the normalised load ZL= ZL / Z0 and hence the complex load ZL = Z0 (1.0
+ j0.7)
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slotted line method from the measurement of line VSWR and the distance of
first voltage minimum from the discontinuity plane as follows. .
Let jx be the reactance of the discontinuity at load distance point d =0.
The line is terminated by a matched load R0, at d = 0. The total impedance of
the combination is
𝑅0 .𝐽𝑋
ZL =
𝑅0 + 𝐽𝑋
= x + jy, say
𝑋2 𝑋𝑅0
Where, x= ,y =
𝑅02 +𝑋 2 𝑅02 +𝑋 2
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slotted line scale so that the distance of first voltage minimum with discontinuity
and matched load termination is dmin = (xl ~ x2).
By locating dmin/ λg , S on the Smith chart, ZL/R0 = x + jy can be read and
B/G0 = y/x is calculated.
Impedance Measurement by Reflectometer
When the unknown impedance is connected to the output port, the ratio
of the signal amplitudes at ports 3 and 4 is, in general
𝑏3 𝐴 Г𝐿 + 𝐵
=
𝑏4 𝐶 Г𝐿 + 𝐷
1 𝑏
|Г𝐿 | = | 3|
𝐾 𝑏4
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Thus
𝑏
Г𝐿 = 𝐾 | 3| 𝑒 𝑗𝜙𝐿
𝑏4
1 + Г𝐿
ZL = Z 0
1 − Г𝐿
The accuracy of phase measurement depends on the sensitivity of the
detector for null reading and the vernier scale reading of the movable short.
2. Frequency measurement
Microwave frequency is measured using a commercially available
frequency counter and cavity wave meter. The frequency also can be computed
from measured guide wavelength in a voltage standing wave pattern along a
short circuited line by using a slotted line.
1. Wave meter Method
A typical wave meter is a cylindrical cavity with a variable short circuit
termination which changes the resonance frequency of the cavity by changing
the cavity length.
TEO11 mode is most suitable for wave meter because of its higher Q and
absence of axial current. Since this is higher order mode, possibility of
generation of lower order modes exits. Hence for practical purposes dominant
TM010 mode is used in wave meter applications. Wave meter axis is placed
perpendicular to the broad wall of the waveguide and coupled by means of a
hole in the narrow wall as shown in Figure 5.19
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20 GHz. For better accuracy a low noise oscillator and noiseless multiplier are
to be selected.
5. How do you measure the following?
a. Q factor
b. Dielectric constant
c. Scattering coefficients [Reg-2013]
d. Attenuation
a. Measurement of Cavity Q
A difficult measurement at microwave frequencies is the accurate
measurement of Q of a high Q cavity. This is due to the fact that the 3dB
bandwidth of the cavity response curve is a very small fraction of the resonance
frequency. Moreover, the cavity has to be loaded during such measurements
and Q becomes lower. There are three definitions of Q, s connected to the
associated circuit which are summarized below.
Unloaded Q0
Energy stored in the cavity
Q0 = 2π
Energy lost per cycle in the cavity
From above definition, 1/QL = 1/Q0 + 1/Q5 and thus QL<Q0. For an
aperture coupled transmission type cavity, the input and output coupling factors
β1 and β2 are a measure of the extent to which the power is coupled to the cavity
and from the cavity, respectively, where
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4
β1=
4𝑆0 −(𝑆0 +1)2 𝑇(𝑓0 )
β2 = β1S0 -1
Q0 = QL (1+ β1 + β2)
Here,S0 = VSWR at the resonance frequency f0
T (f0) = Pout/ Pin
= Transmission loss at the resonance frequency fo.
Measurement of both the transmission loss T (f0) and VSWR S0 at resonance
gives the data needed for calculating β1 and β2 and determining Q0. A brief
description of several methods of measurement of Q is given below.
1. Slotted Line Measurement of Q
A slotted line may be used to measure the Q of a reflection type cavity
which is normally used in a microwave tube, through pure VSWR
measurements or through measurement of the shift in position of a standing
wave minimum as the generator frequency is varied. Here the VSWR in the line
that feeds the cavity is uniquely related to the variation in amplitude of the cavity
input reflection coefficient and the shift of minimum is related to the variation of
phase angle of the complex voltage reflection coefficient. The measurement
set-up is shown in Figure 5.21. The half-power frequency is found directly from
the VSWR measurement, where the equivalent resonator reactance is
assumed to be equal in magnitude to the equivalent resonator resistance.
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|𝑍𝑖𝑛 + 𝑍0 |𝑍𝑖𝑛 + 𝑍0 |
S=
|𝑍𝑖𝑛 + 𝑍0 ||Zin + 𝑍0 |
and
1 1
S1 = 𝑆0 + + √𝑆02 + ; R > Z0
2𝑆0 4𝑆02
1 𝑆02
= 1/S0 + S0/2 + √( + ) ; R > Z0
𝑆02 4
The unloaded Q0 = f0/ (f1 ~ f2) can be determined from the above
measurements. For a loaded cavity, minimum value S0 as well as f = f1~ f2
increase and this results in a lower value of Q. The accuracy of measurement
lies on the half power VSWR and half-power bandwidth. In this method the
measurement errors include the departure from square-law behaviors of the
probe detector, frequency instability of the source, generator mismatch, probe
and generator interaction at high VSWR.
2. Reflectometer Method of Measurement of Q
This method is suited for a reflection cavity and provides oscilloscope
presentation by a swept microwave source. The method determines the
magnitude of voltage reflection coefficient Г at resonance, at half-power points
and at a point far away from resonance Г = 1. A schematic of the experimental
set-up is shown in Figure 5.22 The total errors in the measurement depends
essentially on the accuracy of measuring the bandwidth and in setting half -
power level for the reflection coefficient. The errors in half-power point for the
reflection coefficient depend on the imperfect directivity of directional couplers
and instability of the source frequency.
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Therefore,
′
Zin + j Z0 tan β0 l0 = 0
or,
j Ze tan βe le + j Z0 tan β0 l0 = 0
or, Z0 tan β0 l0 = − Ze tan βe le
Assuming nonmagnetic dielectric in the waveguide,
𝑍0 𝛽𝑒
Or, =
𝑍𝑒 𝛽0
𝛽𝑒 𝑍𝑒
Z0 =
𝛽0
or,
l0 tan β0 l0 le tan βe le
=−
β0 l0 βe le
or,
l0 tan Y tan X
=- ; where X = βe le , Y = β0 l0 ------------(1)
le Y X
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where
E0, ω0 = the field and resonant frequency of the original cavity
E, ω = the corresponding quantities of the perturbed cavity
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Ve , Vs = volumes of the empty cavity and the sample filling the cavity,
respectively
Assuming small perturbation, ω can be replaced by ω0 and the simplified
relations are
-----------(a)
Where | E0 |vs has been assumed constant over the region of integration
throughout the small sample and
---------------(b)
Here QC = Q of the unperturbed cavity
Qs = Q of the perturbed cavity
In principle, any type of cavity either rectangular or circular can be used
with excitation by suitable mode. The following criteria are important.
(a) The cavity Q should be as high as possible to enhance the accuracy of the
measurement and this is very stringent, particularly in low loss material.
(b) The mode of operation should be such that the dielectric sample is
conveniently placed at a uniform field region Emax, where H = 0 for the
measurement of ϵ' and ϵ".
(c) The accuracy of the method depends on the smoothness of the sample, and
fitness of the sample in the cavity.
In view of the above, rectangular cavity in TE103 mode and circular cavity
in TM010 mode is found suitable in this technique. Both the cavities thus produce
Emax, and H = 0 at the centre where the dielectric samples in the form of a thin
rod are placed inside the cavity transversely as post parallel to E-field as shown
in Figure 5.24. With this combination, the perturbation relations are described
as follows.
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Figure 5.24 Cavity Perturbation Method (a) rectangular cavity (b) circular
cavity
c. Measurements of Scattering Parameters of a Network
S-parameters can be conveniently measured following the Deschamps
method which utilises measured values of complex input reflection coefficients
under a number of reactive terminations.
S-Parameters of a Two-Port Network
The output end of the two-port network is terminated with a short circuit
plunger to vary the reactive termination by moving the plunger in steps of at
least 1/8th of the guide wavelength and the corresponding input reflection
coefficients are measured. When the attenuation coefficient α in the line is small
and the change of total length of the line is less than one guided wavelength,
the points P's of the corresponding measured reflection coefficients describe an
average circle on the polar chart with centre OC and radius CP as shown in
Figure 5.25.
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For | S22 | and | S21 |, measurements are carried out by interchanging the ports.
d. Insertion Loss and Attenuation Measurements
When a device or network is inserted in the transmission line, part Pr, of
the input signal power Pi is reflected from the input terminal and the remaining
part Pi - Pr which actually enters the network is attenuated due to the non-zero
loss of the network. The output signal power Po is therefore less than Pi.
Therefore, insertion loss is defined by the difference in the power arriving at the
terminating load with and without the network in the circuit.
𝑃0 𝑃𝑖 −𝑃𝑟 𝑃𝑜
Since, = ∗
𝑃𝑖 𝑃𝑖 𝑃𝑖 −𝑃𝑟
𝑃0 𝑃0 𝑃0
10 log = 10 log (1 − ) + 10 log ( )
𝑃𝑖 𝑃𝑖 𝑃𝑖 −𝑃𝑟
Insertion loss = reflection loss + attenuation loss
Where, by definition
𝑃0
Insertion loss (dB) = 10 log
𝑃𝑖
𝑃𝑟
Reflection loss (dB) = 10 log (1 − )
𝑃𝑖
= 10 log (l - | Г |2)
4𝑆 l−|Г|
= 10 log ;S=
(1+𝑆)2 l+|Г|
𝑃0
Attenuation loss (dB) = 10 log ( )
𝑃𝑖 −𝑃𝑟
Return loss (dB) = 10 log Pr/Pi = 20 log | Г |
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For perfect matching, Pr = 0, and the insertion loss and the attenuation
loss become the same. The experimental set up for insertion and the
attenuation measurements are shown Figure 5.26. The relative power levels
are measured by using detectors and a VSWR meter. DC1 and DC2 are two
identical directional couplers.
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Port 1 V1 4Ω ½ Port 2
− −
Figure 11 (b) (ii)
12. (a) (i) A MESFET operated at 5.7 GHz has the following S-Parameters:
S11 = 0.5 | - 600, S12 = 0.02 | 00
S21 = 6.5 | 1150; S22 = 0.6 | -350
Verify the circuit, whether it is unconditionally stable or not? (6)
(ii) Write brief not on.
(1) Operating power gain (3)
(2) Available power gain (3)
(3) Noise figure. (4)
(or)
(b) Discuss the design procedure for T and π matching networks.
(Page no. = 46-51) (16)
13. (a) Describe the following with neat sketch.
(i) Magic Tee (Page no. = 62-67) (8)
(ii) Directional coupler. (Page no. = 70-73) (8)
(or)
(b) Explain the operation of following microwave passive devices.
(i) Circulator (Page no. = 68-69) (8)
(ii) Isolator (Page no. = 69-70) (8)
14. (a) Explain the principle of operation of Tunnel diode and TRAPATT
device.
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(or)
(b) (i) Describe the Gunn effect with the aid of Two-valley model theory.
(Page no. = 75-77) (8)
(ii) Draw the physical structure and doping profile of IMPATT diode
and explain in detail. (Page no. = 77-79) (8)
15. (a) Explain the working principle of Reflex Klystron and derive the
expression of bunching parameter. (Page no. = 90-94) (16)
(or)
(b)(i) Write a detailed note on cylindrical magnetron.(Page no.104-109)(8)
(ii) Explain the procedure for measuring impedance at microwave
frequency with the aid of slotted line. (Page no. = 134-141) (8)
B.E/B.Tech. DEGREE EXAMINATION, MAY/JUNE 2014
Seventh Semester
Electronics and Communication Engineering
EC 2403/EC 73/10144/EC 703-RF AND MICROWAVE ENGINEERING
(Regulation 2008/2010)
Answer all the questions.
PART A-(10 x 2 =20 marks)
1. List any four reason for the wide use of RF. (Page no. =11)
2. Give the relationship between [S] and [Z]. (Page no. =11)
3. Define stability.
4. What are the need for impedance matching networks? (Page no. = 37)
5. What are the factors that reduce the efficiency of IMPATT diode? (Page
no. =62)
6. What is negative resistance in Gunn diode? (Page no. =62)
7. What are the matched terminators?
8. What are ferrites? Why is it needed in circulators? (Page no. =60 )
9. What are the errors in impedance measurement? (Page no. =116-117)
10. Define convention current of TWT.
PART B-5 x 16 =80 marks)
11 (a) With the help of S matrix concept prove the following properties.
(i)Symmetry (ii) Unity (iii)Zero and (iv)Phase Shift.(Pg.no.21-23)4x4=16
Or
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(b) (i)When do you prefer transmission matrix? Obtain the ABCD matrix of
a transformer with turns ratio of N:1. (Page no. = 26-27)
(8)
(ii)The impedance matrix of a certain lumped element network is given
4 2
by Z ij .Determine the equivalent scattering parameter matrix
2 4
S SS
ij
11 S12
S 22
for |Zij| (8)
21
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Or
(b)(i) Describe the measurement of power at microwave frequencies in detail.
(Page no. = 124-134) (8)
(ii)Explain the procedure to measure the impedance of a load.Pg.no.134-141(8)
B.E/B.Tech. DEGREE EXAMINATION, NOV/DEC 2014
Seventh Semester
Electronics and Communication Engineering
EC 2403/EC 73/10144/EC 703-RF AND MICROWAVE ENGINEERING
(Regulation 2008/2010)
Answer all the questions.
PART A-(10 x 2 =20 marks)
1. What are the high frequency limitations of conventional tubes'? (Page
no.87)
2. Given
Find S parameters.
3. Define unilateral power gain. (Page no. =37)
4. State the significance of microstrip matching networks.
5. A 6dB attenuator is specified as having VSWR of 1.2. Assuming that the
device is reciprocal, find the S parameters.
6. Mention the application of Gyrator and Isolator.
7. Write the necessary conditions for Gunn effect. (Page no. 62)
8. A Si Mw transistor has a maximum electric field intensity of Em of 3 x 105
V/cm and its carrier has a drift velocity of 4x106 cm/s. The emitter collector
length is 4μm. Find maximum possible transit time cut off frequency.
9. Compare two cavity klystron and traveling wave tube. (Page no.87)
10. What is the significance of VSWR measurement? (Page no. 117 )
PART B – (5 X 16 = 80)
11. (a) (i) Discuss the importance of low frequency and high frequency
parameters of RF two port networks. (Page no. = 13-21) (6)
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(ii) The two port devices represented by the following matrices are
cascaded. Find the scattering matrix of the resulting device. Determine its
properties (symmetry, reciprocity, losses and match)
(1) (5)
(2) (5)
Or
(b) Verify the lossless and reciprocity properties of any two port network using
scattering matrix. (Page no. = 23-25) (16)
12 (a) (i) with reference to RF transistor amplifier, discuss the considerations
for stability and gain. (Page no. = 43-46) (8)
(ii) Show that the noise figure of a three stage amplifier is F = F1 + F2 -1/GA1 +
F3-1/GA2.where F1,F2,F3 are noise figures and GA1 and GA2 are power gains.
(Page no. = 51-53) (8).
Or
(b) (i) Explain in detail the concept of T and Microstripline matching networks.
(Page no. = 46-51) (10)
(ii)Describe the smith chart. How can it be used to determine an unknown
impedance? (6)
13. (a) (i) Explain the concept of N port scattering matrix representation.
(Page no. = 13-21) (6)
(ii) Discuss the properties of scattering matrix. Determine the scattering matrix
representation of E plane Tee Junction. (Page no. = 62-67) (10)
Or
(b) (i) Explain the operating principle of microwave circulator with neat
schematic diagram. (Page no. = 68-69) (8)
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2. Draw the high frequency equivalent circuit of the resistor and inductor.
(Page no. =11)
3. Draw the VSWR circle for reflection coefficient 1.
4. Draw the contour of nodal quality factor Q=3.
5. Name any two microwave passive devices which make use of Faraday
rotation. (Page no. =61)
6. What are the property of S matrix? (Page no. =11 )
7. Draw the equivalent circuit of Varactor diode. (Page no. =75 )
8. What is the need for matching network?
9. What are the limitations of conventional vacuum devices?(Pg.no. 87).
10. Mention the major differences between the TWT and klystron.(Page
no.87
PART B- (5 x 16 =80 marks)
11 (a) (i)Derive Z and Y matrix formulation of multi-port network.
(Page no. = 13-21) (8)
(ii) State and prove the symmetry of S matrix for a reciprocal network.
(Page no. = 21-23) (8)
Or
(b)Explain the scattering matrix for lossless junction. (Page no. = 23-25) 16)
12. (a)(i)write the mathematical analysis of amplifier stability.(Pg no. 43-46) (8)
(ii)Design a microwave amplifier for maximum transducer power gain. (8)
Or
(b) using the smith chart design any two possible configuration of discrete
two element matching networks to match the source impedance Z s (50 j 25)
to the load Z L (25 j50). .Assume the characteristic impedance Z 0 50 and
operating frequency of 2 GHZ. (16)
13. (a)(i)Explain the concept of N port scattering matrix representation.
(Page no. = 13-21) (8)
(ii)With neat diagram explain the operation of phase shifter and show its
phase changes is 2 4 l (8)
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Or
(b) With neat diagram explain the operation of the following devices:
(i) Gyrator (8)
(ii) Two hole directional coupler. (Page no. = 70-73) (8)
14. (a) Explain the working principles of Gunn diode with two valley model
and plot its characteristics. (Page no. = 75-77) (16)
Or
(b) What are the avalanche transit time devices? Explain the operation and
construction of IMPATT diode. (Page no. = 77-79) (16)
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Or
(b) (i) Draw the high frequency equivalent of wire, resistor, inductor and
capacitor and explain. (Page no. = 27-30) (8)
(ii) Evaluate the S parameters from the Z parameters. (8)
12. (a) Design all the possible configurations of discrete two element
matching network that match the source impedance ZS=(50+j25)Ω to the load
ZL=(25-j50)Ω. Assume the characteristic impedance 75 Ω and operating
frequency of 2 GHZ.
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Or
(b) Draw the 8 dB gain circle of the transistor with following S parameters at
1 GHz. S11 =0.46<-97o, S12 =0.06<-22o, S21 =7.1<112o, S22 =0.57<-48o
(Page no. = 56-59) (16)
13. (a) (i)Explain the working principle of E plane Tee and derive its S
parameters. (Page no. = 62-67) (8)
(ii)Explain the working of phase shifter with neat diagram. (8)
Or
(b) (i) Explain the working of circulator and explain its applications.
(Page no. = 68-69) (10)
(ii) Explain the working principle of isolator. (Page no. = 69-70) (6)
14. (a) Explain the working principle of Gunn diode oscillator and its
modes. (Page no. = 75-77) (16)
Or
(b) Explain the working principle of IMAPTT diode with neat diagram.
(Page no. = 77-79) (16)
15.(a) Explain the working principle of Travelling Wave Tube Amplifier (TWTA)
(Page no. = 95-96) (16)
Or
(b) Explain the working principle of reflex klystron oscillator and derive the
expression for power and efficiency. (Page no. = 90-94) (16)
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12 (a). Derive the equation for power gain, available power gain and transducer
power gain. (Page no. =38) (16)
Or
(b). Investigate the stability regions of a transistor whose S-Parameters are
recorded as follows: (16)
S12 = 0.2 ∠ −100 ; S11 = 0.7 ∠ −700 ;
S21 = 5.5 ∠ 850 ; S22 = 0.7 ∠ −450 ;at 750 MHz (Pg. no. = 56-59)
13. (a). Discuss briefly about working principle, operation, characteristics and
application of Varactor diode. (Page no. =73) (16)
Or
13. (b).What is circulator ? With neat diagram, explain the working principle,
construction, operation of four-port circulator using magic – tee. Verify the
circulator theory with necessary S-parameter equations. (Page no. =68) (16)
14. (a).Explain the working principle and operation of multi-cavity klystron
amplifier and derive the expressions for its output power.(Grace Mark) (16)
Or
(b) A travelling wave tube (TWT) operates under the following parameters:
Beam Voltage V0=3 KV
Beam Current I0 = 30 mA
Characteristic impedance of helix = z0=10 Ω
Circuit length = N= 50 m
Frequency f = 10 GHz
Determine:
(i). Gain Parameters C.
(ii). Output power gain Ap in decibels.
(iii). All four propagation constants (Page no. =95) (16)
15. (a). Explain the impedance measurement technique using slotted line and
reflectometer. (Page no. =134) (8+8)
Or
(b).Explain the measurement of high VSWR with a help of block diagram.
(Page no. =129) (16)
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12 (a). Explain in detail about microstrip line matching network with neat
diagram. (Page no. =46-47) (16)
Or
(b). Discuss about the design of T-section and P1 section matching network.
(Page no. =47-48) (16)
13.(a). With neat diagram discuss the characteristics of series Tee and shunt
Tee and derive the S matrix. (Page no. =62-66) (16)
Or
13.(b).Discuss the principle of operation of any two non-reciprocal devices and
derive the S-Parameters. (Page no. =68-73) (16)
14.(a).With neat diagram explain the operation of two cavity klystron amplifier
and derive the equations for velocity modulation process. (Page no. =96-103)
(16)
Or
(b) (i). Give the comparison between gunn, IMPATT, TRAPATT and Baritt.
(Page no. =75-79)
(ii).Explain the operation of travelling wave tube and write its characteristics.
(Page no. =95-96)
15.(a). Discuss impedance, wavelength and frequency measurement using
slotted line method. (Page no. =134-140) (16)
Or
(b).Write short notes on power sensors used for microwave power
measurement (Page no. =126-128) (16)
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