Datasheet

ON Semiconductor
NPN
High-Voltage - High Power 2N5631
PNP
Transistors 2N6031
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector Emitter Sustaining Voltage – 16 AMPERE
VCEO(sus) = 140 Vdc POWER TRANSISTORS
• High DC Current Gain – @ IC = 8.0 Adc COMPLEMENTARY
SILICON
hFE = 15 (Min)
140 VOLTS
• Low Collector–Emitter Saturation Voltage – 200 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Rating Symbol Value Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector–Base Voltage
VCEO
VCB
140
140
Vdc
Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 7.0 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current – Continuous IC 16 Adc CASE 1–07
Peak 20
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
TO–204AA
(TO–3)
Base Current – Continuous IB 5.0 Adc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Total Device Dissipation @ TC = 25C
ÎÎÎÎÎÎÎ
ÎÎÎ
Derate above 25C
PD 200
1.14
Watts
W/C
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg –65 to +200 C
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θJC 0.875 C/W
(1) Indicates JEDEC Registered Data.
200
PD, POWER DISSIPATION (WATTS)
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

May, 2001 – Rev. 0 2N5631/D
2N5631 2N6031
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (2) VCEO(sus) Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 200 mAdc, IB = 0) 140 –
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Cutoff Current ICEO mAdc
(VCE = 70 Vdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Cutoff Current ICEX
– 2.0
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCB, VEB(off) = 1.5 Vdc) – 2.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150C) – 7.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Base Cutoff Current ICBO – 2.0 mAdc
(VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
Emitter–Base Cutoff Current
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎ
IEBO – 5.0 mAdc
ÎÎÎÎÎ
DC Current Gain ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ON CHARACTERISTICS (2)
ÎÎÎÎ
ÎÎÎ
hFE –
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 8 Adc, VCE = 2.0 Vdc) 15 60
(IC = 16 Adc, VCE = 2.0 Vdc) 4.0 –
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Collector–Emitter Saturation Voltage
ÎÎÎÎ
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎ
VCE(sat)
– 1.0
Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 16 Adc, IB = 4.0 Adc) – 2.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter Saturation Voltage VBE(sat) – 1.8 Vdc
(IC = 10 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 8.0 Adc, VCE = 2.0 Vdc)
VBE(on) – 1.5 Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current–Gain – Bandwidth Product (3) fT 1.0 – MHz
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance 2N5631 Cob – 500 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6031 – 1000
ÎÎÎÎÎ
Small–Signal Current Gain
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
hfe 15 – –
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest
VCC 3.0
+30 V 2.0 TJ = 25°C
IC/IB = 10
25 µs 1.0 VCE = 30 V
RC
+11 V 0.7
SCOPE tr
0 RB 0.5
t, TIME (s)
µ
-9.0 V 0.3
51 D1 0.2
tr, tf ≤ 10 ns td @ VBE(off) = 5.0 V
DUTY CYCLE = 1.0% -4 V 0.1
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.07
0.05 2N5631
D1 MUST BE FAST RECOVERY TYPE, e.g.: 2N6031
1N5825 USED ABOVE IB ≈ 100 mA 0.03
MSD6100 USED BELOW IB ≈ 100 mA 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
For PNP test circuit, reverse all polarities and D1. IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Turn–On Time
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2N5631 2N6031
1.0
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
RESISTANCE (NORMALIZED) 0.5
0.2
0.2
0.1
θJC(t) = r(t) θJC P(pk)
0.1 0.05 θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
0.05
0.02 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
SINGLE PULSE 0.01 TJ(pk) - TC = P(pk) θJC(t)
0.02 DUTY CYCLE, D = t1/t2
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
t, TIME (ms)
Figure 4. Thermal Response
20 There are two limitations on the power handling ability of

1.0ms
5.0ms a transistor: average junction temperature and second
10
IC, COLLECTOR CURRENT (AMP)
breakdown. Safe operating area curves indicate IC – VCE

7.0 dc
0.5ms limits of the transistor that must be observed for reliable
5.0
operation, i.e., the transistor must not be subjected to greater
3.0 TJ = 200°C 50ms
dissipation than the curves indicate.
2.0 SECOND BREAKDOWN LIMITED
The data of Figure 5 is based on TJ(pk) = 200C; TC is
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C variable depending on conditions. Second breakdown pulse
1.0
limits are valid for duty cycles to 10% provided TJ(pk)
0.7
CURVES APPLY BELOW 200C. TJ(pk) may be calculated from the data in
0.5
RATED VCEO Figure 4. At high case temperatures, thermal limitations will
0.3 2N5631, 2N6031 reduce the power that can be handled to values less than the
0.2 limitations imposed by second breakdown.
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
NPN PNP
2N5631 2N6031
5.0 4.0
TJ = 25°C TJ = 25°C
3.0
IC/IB = 10 ts IB1 = IB2
3.0 ts IB1 = IB2 IC/IB = 10
2.0
VCE = 30 V VCE = 30 V
2.0
t, TIME (s)
µ
1.0
0.6
1.0
tf 0.4
0.7 0.3 tf
0.5 0.2
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
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2N5631 2N6031
NPN PNP
2N5631 2N6031
1000 2000
700 TJ = 25°C
TJ = 25°C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
500 1000
Cib
700
300
500 Cib
200
300
Cob Cob
100 200
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
500 500
TJ = 150°C TJ = +150°C
300 VCE = 2.0 V 300 VCE = 2.0 V
200 VCE = 10 V 200 VCE = 10 V
25°C +25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
100 100 -55°C

-55°C
70 70
50 50
30 30
20 20
10 10
7.0 7.0
5.0 5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
2.0 2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C TJ = 25°C
1.6 1.6
1.2 IC = 4.0 A 8.0 A 16 A 1.2 IC = 4.0 A 8.0 A 16 A
0.8 0.8
0.4 0.4
0 0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IB, BASE CURRENT (AMP) IB, BASE CURRENT (AMP)
Figure 9. Collector Saturation Region
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2N5631 2N6031
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N5631 2N6031
Notes
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2N5631 2N6031
Notes
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2N5631 2N6031
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ON Semiconductor

Figure 1. Power Derating

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

Figure 2. Switching Times Test Circuit Figure 3. Turn–On Time

Figure 4. Thermal Response

20 There are two limitations on the power handling ability of

breakdown. Safe operating area curves indicate IC – VCE

Figure 5. Active–Region Safe Operating Area

Figure 6. Turn–Off Time

hFE, DC CURRENT GAIN

100 100 -55°C

Figure 8. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.2 IC = 4.0 A 8.0 A 16 A 1.2 IC = 4.0 A 8.0 A 16 A

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