1979

LCI

1984 GTO – IMD

1997 Innovation
Series®

Drive Evolution 2001

Medium Voltage

metals cranes paper cement oil & gas mining utilities rubber &
plastics

One company. A world of solutions.

 Evolving Simplicity and Reliability in MV AC Adjustable Speed Drive Systems
Progress in Medium Voltage Drives
In the late 1970s solid-state medium voltage (MV) ac
motor adjustable speed drives (ASDs) began to appear in
commercial service. These first installations were larger,
expensive, less reliable and efficient than their modern
counterparts. For the purpose of our discussions, we will
consider medium voltage to apply to levels over 1000
Volts, 3- phase.
Three key technology areas have driven improvements in
performance and cost:
x Power semiconductor device development
x Power bridge topology arrangement
x Electronic signal processing
General AC Drive Arrangement
Every ac drive includes three major sections between the
ac utility supply and the load. These are shown in Figure
1. Transformation isolates and changes utility voltages to
the levels and configuration of the conversion section.
The Conversion section changes the transformed utility
voltage into adjustable voltage, adjustable frequency ac
voltage to match the speed and torque requirements of the
connected load. The Utilization section consists of the ac
motor and mechanical equipment such as gearing and
couplings.
The drive conversion section consists of dc Conversion,
Energy Storage, and Switching. The conversion section of
the drive uses a combination of semiconductors to convert
the utility voltages into a dc voltage and current. This dc
power is stored in inductors or capacitors before being
passed to the switching section. The switching section
connects the dc voltage or currents stored into the successive
phases of the ac motor. The frequency, voltage, and current
are regulated to match the needs of the load.
Efficiency
The efficiency of an ac drive is measured by comparing the
total output kW of the drive to the total utility input kW. Any
energy lost between the power line and the motor input
terminals reduces system efficiency. Each element of the
drive, including transformers, inductors, storage capacitors,
rectifiers, field excitation, output switching devices, firing
circuits, snubbers, and cooling equipment are included in
efficiency calculations. Considering all these items, the
efficiency at maximum output for medium voltage ac drives
ranges from 95 to 97 percent.
Transformer losses are usually in the range of 1 to 1 ½
percent of full load rating. Capacitors are typically very low
loss devices. Inductors have resistive losses proportional to
current-squared (I2R losses). Semiconductor losses are a bit
more complex. Each device has conduction losses
proportional to current. For active devices (SCR, GTO,
IGCT, etc.) energy is lost both in conducting current and in
turning them on and off. These losses vary dramatically
between the different devices.
Build It And They Will Use It
Inventors and manufacturers of semiconductors depend on
enterprising companies and determined and clever engineers
to take their devices into the real world. As each power
semiconductor type became available in practical packages
and in usable power ranges, the new devices quickly found
their way into drive system products.

Conversion Utilization
Transformation
Load
AC TO DC
DC TO AC
AC
OR MOTOR
OR OR OR OR

Utility DC CONVERSION ENERGY SWITCHING

Supply STORAGE
A CACIn Inverter
v e rt e r Te c h n o lo g y
Technology
U p Up
To To97%
70% Effic ie n c y
Efficiency

Figure 1. General AC Drive Arrangement

Revised: 7-07 © 2007 TMEIC GE Automation Systems. All Rights Reserved. Page 2 of 28
Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 2 of 27
All Rights Reserved
 Power Semiconductor History
Adjustable frequency ac drives were first put into service
using Thyratron gas rectifiers as early as 1931. But it took
the invention and availability of power semiconductor Table 1. Power Device Symbols, Operation, and Description
devices to move the technology into wider use. It will be
useful to use accepted abbreviated acronym names and
Device Operation Description
device symbols in our further discussions. Table 1
includes the key devices of interest to our discussion. Silicon Diode Family of Devices
Figure 2 gives the approximate development timeline for Diode Conducts positive current
power semiconductors. Each semiconductor type has lent
itself best to certain configurations of ac drives. As Thyristor Family of Devices
voltage and current ratings increased, drives moved into Gate current triggers the flow of positive
the medium voltage (MV) arena. Silicon Controlled Rectifier current. After loss of gate signal, turns
(SCR) off the positive current at next zero cross
Power Device Characteristics over.
Engineers either work with these characteristics or work Small positive gate signal turns on
around them to accomplish their goals of efficient drive Gate Turn Off Thyristor (GTO) positive current, a large reverse gate
turns off the positive current.
design. Some of these key device characteristics are listed
below. A bit later we will discuss some of the more A GTO with electronics for gate control
important characteristics of each device type. We will Integrated Gate Commutated integrated onto a printed circuit wrapped
Thyristor (IGCT) around the device. Blocks voltage in one
also review devices that are most relevant to MV drives. direction.
Key device characteristics include:
x Continuous current Symmetrical Gate Commutated
A GTO thyristor similar to the IGCT
except that it blocks voltage in both
x Forward blocking voltage Thyristor (SGCT)
directions.
x Reverse blocking voltage
x Switching speed Transistor Family of Devices
x Gate power to turn on and turn off
x Switching losses
Bipolar Power Transistor Controls the flow of positive current
x On-state losses (BPT) with current injected into its base.
x Physical mounting characteristics
x External circuitry required
A hybrid device with very a high
Power Devices in AC Drives Integrated Gate Bipolar
input resistance gate transistor
Transistor (IGBT)
As power devices have evolved, designers have used their providing current to turn it on.
characteristics in the construction of ac drives. The power
semiconductors of Table 1 fall into three major Families: A high-power advanced form of the
diodes, thyristors, and power transistors Injection Enhanced Gate IGBT with a very low on-state
Transistor (IEGT) voltage and even lower losses than
the thyristor.

Transistor Devices
Bipolar Power Low Voltage Insulated Medium Voltage Insulated Injection Enhanced
Transistor Gate Bipolar Transistor Gate Bipolar Transistor Gate Transistor
(BPT) (LV IGBT) (MV IGBT) (IEGT)

1955 1965 1975 1985 1995 2005

Diode (D) Silicon Gate Turn Off Integrated Gate Symmetrical Gate
Controlled Thyristor Commutated Thyristor Commutated Thyristor
Rectifier (SCR) (GTO) (IGCT) (SGCT)

Thyristor Devices

Figure 2. Power Semiconductor Timeline

Revised: 7-07 © 2007 TMEIC GE Automation Systems. All Rights Reserved. Page 3 of 28
Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 3 of 27
All Rights Reserved
 strongly. For this reason they are sometimes called
regenerative devices. This positive feedback decreases
voltage drop across them, and gives a low forward loss.
However, this also makes them relatively slow in
switching speed and hard to turn off. So gating circuitry
capacity and complexity, and switching losses of thyristor
device circuits becomes the focus for disadvantages.
Figure 3. W
Trends In Power Devices device, but
Voltage this gap isThe
Withstand. closing
ability with to recent
withstand IEGT transistors
forward or Cap
Trends
In general, In Power
power Devices
semiconductor devices have moved device,
rated
reverse but
at voltage
4500 this gap
Volts.
is is closing
another key with device recent IEGT transistors
parameter. In
In general,
toward higherpower semiconductor
voltage, greater continuous devices have current,moved faster rated at 4500
general, thyristorVolts. devices have higher voltage withstand
Higher blocking voltage can permit fewer devices to be used
toward higher
switching speeds, voltage,easiergreater
switching, continuous and lower current,
losses. faster levels
Higher (up to
blocking6000 Volts) per
voltage can device
permit than
fewer the transistor
devices to be are used
in a given MV power circuit. However, if fewer devices
Trends speeds,
switching
Improvements In Power in these Devices
easierimportant
switching, and have
areas lowergiven losses. device, but this gap is closing with recent IEGT transistors
in a given
used, MV change
the level power circuit. at eachHowever,transition ifis fewer larger.devicesFor all are but
Improvements
In general,the
designers power in these
tools theyimportant
semiconductor
needed todevices areas
createhave have
today's given
moved
compact rated at 4500 Volts.
used, the01-06-05
2300-volt
Revised: level
output change
drives, at this
eachrequires
transition
© some
2005 isTMGE
larger.
means For all but
of filtering
Automation Systems, U.S.A.
designers
and
towardefficient theMV
higher tools acthey
voltage, drives.neededcontinuous
greater to create today's current, compact
faster 2300-volt
Higher
the output output
before drives,
blocking voltage
being appliedthis
canrequires
permit
to thefewersome
motor. means
devices oftofiltering
be used
All Rights Reserved
and efficient
switching MV ac
speeds, drives.
easier switching, and lower losses. the
in aoutput
given MV before powerbeingcircuit.
applied to the motor.
However, if fewer devices are
As switches, each of the active devices (thyristors and SCR. The original thyristor device, the SCR, turns on with a
Improvements in these important areas have given used, the level change at each transition is larger. For all but
As switches,
their device type, each transistors
of the active anddevicestheir device (thyristors type)and has SCR. current
small The original injected thyristor
into itsdevice, the SCR, current
gate. Reducing turns oninwith the a
designers the tools they needed to create today's compact 2300-volt output drives, this requires some means of filtering
their deviceand
advantages type, transistors andAtheir
disadvantages. perfect devicedevice type) would has small
device current
to zero injected
through into its
external gate. Reducing
voltage levels, current
devices, in the
and efficient MV ac drives. the output before being applied to the motor.
advantages
turn on and and off with disadvantages.
no losses, with A perfect device and
little effort, would once device to zeroorthrough
components, circuit load external voltage levels,
characteristics can devices,
only turn off
turn
on on and
As would
switches, haveoffeach with
no no
thelosses,
power
of lost due
active with to little
devices voltage effort,dropand
(thyristors across
and once components,
SCR.
the SCR.
TheFor or circuit
example,
original load
an SCR
thyristor characteristics
device, conducting
the SCR, can aonly
in turnsphase- turn
on withoffa
on
its
theirwould
power
device have
terminals.
type, no transistors
power
Since lost
there dueare
and to no
their voltage
perfect
device drop across
devices,
type) has it the
smallSCR.
controlled For
current example,
injected
rectifier circuit an
into SCR
its
turns conducting
gate.
off Reducing
when the in a phase-
current
applied in the
utility
Trends In Power Devices device, but this gap is closing with recent IEGT transistors
its
will power
advantages
be usefulterminals. see Since
andtodisadvantages.
which there
In general, Aare
advantages
power no
perfect perfect
and device
semiconductor devices,
devices it
would
disadvantages have moved ac controlled
sine to
device rectifier
rated
wave
zero atvoltage circuit
4500 Volts.
through across turns
external off when
it reverses
voltage the applied
polarity.
levels, At this
devices, utility
time,
will
turn be
mean ontheuseful
andmostofftoin see
with which
practical
notoward
losses, advantages
MV higher drives.
with little
voltage, and
What disadvantages
effort,
greater follows
and once
continuous is acurrent, faster the ac sine
components,wave
current Higher voltage
through
or circuit
blocking theacross
device
load
voltage itcanreverses
ispermit
zero fewer
characteristics polarity.
and device
can only
devices At to this
is reverse
turn
be time,
used off
mean
on would
factual the
butmost
have in
nopractical
non-exhaustivepowerswitching MV
lost due
comparison.drives.
speeds, to voltage What
easier follows
drop
switching, andislower
across a losses. biased.
the current
SCR. a through
inFor
Many given MVthe
example,
SCRs power
are device
an circuit.
used SCR is
today zero
However,
conducting
in and
MV device
if fewer
in
drivesa is
devices
phase-
in reverse
theare
Improvements
factual
its power
Other butterminals.
Trends non-exhaustive Since comparison.
there arein no these important areas have given
perfect devices, it biased. used, the
Many SCRslevel change
asare used at each
today transition
in MV dcisthelarger.
drives For all
infront
thebut
designers the tools they needed to create today's compactconversion controlled section
rectifier phase-controlled
circuit turns off when
2300-volt output drives, this requires some means of filtering
rectifier
applied ends
utility
will
Beforebe useful
Other Trends to see
we get into details which advantages
of devices
and efficient MV acand and
drives. disadvantages
topologies, it conversion
ac sine
(see wave
Figure section
1).voltage
SCRs as phase-controlled
across
are also it reverses
used in dc rectifier
polarity.
the switching At front
this
section ends
time, of
the output before being applied to the motor.
mean
Beforethe wemostget into in
to practical
details ofMV drives.
devices and Whathave follows itis(thyristors
a
would be good note that
As device
switches, each advances
of thetopologies,
active devices been and MV (see Figure through
the current
inverters 1).where
SCRsthe aredevice
the also itself
load used
is zeroin the
and
provides
SCR. The original thyristor device, the SCR, turns on with a
switching
device
the is
needed section of
reverse
factualbe
would
matched butby non-exhaustive
goodthermal to note thatdevice
packaging comparison.
device advances
transistorshave
improvements been
in their
MV MV
device type) has switching inverters
biased. Many where
andcurrent
reversal
SCRs theofused
are load
voltage itself provides
for device the needed
turn-off. For
their type, and small injected intotoday
its gate. inReducing
MV drives current ininthe
the
matched
drives.
Other For byexample,
Trends thermal packagingheat pipe /improvements
advantages and
heat disadvantages.
plate cooling in MV
A perfect
is device would example, switching
conversion and
in section
device the reversal
to zeroas of voltage
phase-controlled
Load-Commutated
through forInverter
external voltage device
dc turn-off.
rectifier
levels, (LCI),
devices, theForends
front
turn on
drives.
Before For
moving we example,
intoget traditional heat
into details liquidofand
pipe / off
devicesheat
cooling with
andno losses,
plate cooling
topologies,
applications with is little effort, and once
init
on would have no power lost due to voltage drop across connected
example,
(see Figure insynchronous
theSCRs
components,
1). Load-Commutated
or circuit
aremotor loadused
also Inverter
characteristics
providesin thethis can(LCI),
switchingonly turn
commutation the off
section of
moving thesynchronous
SCR. For example, an SCR conducting thisincommutation
a phase-
would up
drives beinto
good traditional
to 5000 to note
HP. its liquid
that
Heat power devicecooling
plates
terminals.(sealed,applications
advances have
Sinceevaporative
there in perfect devices, it energy.
arebeen
no connected
MV inverters where the motor
load provides
itself provides
controlled rectifier circuit turns off when the applied utility
the needed
drives
thermal
matched upcoolers)
to thermal
by 5000provideHP. Heat
packaging
will be plates
liquid useful to(sealed,
cooled
improvements
see which evaporative
efficiency, in MV
advantages small and disadvantagesenergy.switching ac and reversal of across
sine wave voltage for device turn-off. For
thermal
drives. For
footprint coolers)
and example,
more provide mean
heat
even liquid
the most
pipe
device /cooled
heat efficiency,
in practical
cooling, plate MV
yetcooling
with small
drives. GTO. The
is What follows is a example,theincurrent
air- GTO is voltage a thyristor derivative it reverses polarity.
that can At this time,
be turned
the Load-Commutated
through the device is zero Inverter
and device (LCI), the
is reverse
footprint andtraditional
more even factual but non-exhaustive comparison.
devicecooling cooling, yet with air- GTO.
off The
by signals GTO
biased. at
Many is aSCRs
its thyristor
gate. Large
are usedderivative
reverse
today in MV that can
current inbe theturned
pulses,
movingsimplicity.
cooled into liquid applications in connected synchronous motor provides thisdrives
commutation
cooled simplicity. Other Trends off by
extractedsignals
from
conversion attheits gate.
device
section as Large
through reverse
phase-controlled the current
gate
dc of the
rectifier pulses,
GTO,
front ends can
drives up to 5000 HP. Before Heat plates (sealed, evaporative energy. (see Figure 1). SCRs are also used in the switching section of
we get into details of devices and topologies, it be extracted
used tofrom
interruptthe device
the through
forward the gate
current. As ofwith
the the GTO, SCR, canthe
General
thermal coolers) Device provide Comparisons
would liquidbe good cooledto noteefficiency,
that device advancessmall have been MVinterrupt
inverters where the load itself provides the needed
General be
GTO.used
level ofTheto GTO
current is athe
required forward
thyristor
to turn current.
derivative
on the As
that
device with
can
is the
be
small, SCR,
turned
but the
Diode andDevice
footprintDevices more even Comparisons
device
matched cooling,
by thermal yet with
packaging air-
improvements in MV switching and reversal of voltage for device turn-off. For
level
turn
off by of
off current
pulse
signals must
at required
its be
gate.veryto turn
Largehigh, on the
between
reverse device
current10 is
to small,
25%
pulses, of but the
cooled
Power DevicesPowerdrives.
Diode simplicity.
Diodes. diodesinto
moving
For example, heat pipe / heat plate cooling is
aretraditional
the successorsliquid cooling to the applications in forward
example, in the Load-Commutated Inverter (LCI), the
turn off pulse
extracted frommust
current.
connected theThe befiring
device verythrough
synchronous high,turn-off
and
motor between
the gate
provides this 10
of
circuitry to
the25%
commutation GTO,
is of can
large, and
Power
very Diodes.
first semiconductorPowerdrives
diodesdevices.
up to are5000 the
AllHP. successors
diodes
Heat plates to(sealed,
are devices the evaporative complicatedforward
be used to current.
energy.
interrupt
by the Thedifficulty
thefiring
forward and of turn-off
current.
getting fast circuitry
As withpulses isinto
the large,
SCR, theand
the
General
very
that conduct Device
first semiconductor
current onthermalComparisons
onlydevices. All
one direction.
coolers) diodes
provide arecooled
Whenever
liquid devices the
efficiency, small
complicated
device
level of through
current
GTO. byThe the
the difficulty
inductance
required
GTO is a to turn
thyristorofofongetting
thethe
derivative fast
connections
device
that pulses
can is small,
be intowiring.
and
turned the the
but
that conduct
voltage
Diode on thecurrent
Devices anodeon footprint
of only
the diode and more
one direction. even device
is positiveWhenever cooling,
with respect yet
the with air-
cooled simplicity. device
Large through
turn offand pulse
offcomplex the inductance
must
by signals be itsvery
gate.high,
resistor-capacitor
at Large of between
the
reverseconnections
snubber 10 to
current 25% andof
networks
pulses, wiring.
are
voltage
Power
to on the anode
Diodes.
the cathode, the
Power of
diode the
diodeswilldiode pass
are the iscurrent.
positive
successors If with
the to respect
voltage
the Large
needed
forward and extracted
to complex
prevent
current. fromresistor-capacitor
The the device through thesnubber
damagefiring from
and excessive
turn-off gate of thenetworks
voltage
circuitry GTO, can are
isto the
large, gate
and
to
verythefirst
reverses,cathode,
conduction the diode
semiconductor stops.
Generalwill Inpass
devices. practice,
Device current.
All diodes
diodes If are
Comparisonsthe
have voltage
devicesa needed
and
be used to interrupt the forward current. As with the SCR, the
to
misfiring
complicated prevent
byfrom thedamage
the from
transient
difficulty excessive
voltages voltage
generated to bythethegate
level of current required toof turngetting fast
on the device pulses
is small, into
but the
the
reverses,
that conduct
small forwardconduction
current
voltage stops.
on onlyIn
drop ofone practice,
direction.
between diodes
0.5 and have
Whenever a the
1.5 Volts. and misfiring from the totransient ofvoltages hadgenerated
Diode Devices device
gate through
pulses. the inductance
Needless
turn off pulse must say,
be verythe high, the
GTO connections
between 10 to 25%and
significant ofbywiring.
the
small
Heat
voltageisforward
on the voltage
generated anode in the
ofdrop
Powerdiode
the of
diode between
in
Diodes. proportion
isPower 0.5
positivediodesand
to
with 1.5
the
are Volts.
forward
respect
the successors to the
gate pulses.
application
Large and forwardNeedless
current.
problems.
complex to
The say,
Largefiring theandGTO
size,
resistor-capacitor turn-off
power had significant
circuitry
losses
snubber is large,
in gating
networks and and
are
Heat
to theiscathode,
current generated
times the theforward very
indiode
the first pass
diode
will
voltage semiconductor
current.devices.
in proportion
drop. Iftothe All
thevoltage diodes are devices
forward complicated by the difficulty of power
getting fast pulses
that conduct current on only one direction. Whenever thesnubbers, application
needed to andproblems.
prevent damage
cumbersome Large fromsize,
physical excessive losses
voltage
arrangements ininto to the and
gatingthe gate
current
reverses,are
Diodes times foundthe forward
conduction stops.
voltageIn
in virtually voltage
onall
drop. in
practice,
thedrives
anode of diodesone
the have
form
diode a
or
is positive with respectsnubbers,
device through the inductance of the connections and wiring.
and misfiring andand cumbersome
from the transient physical voltages arrangements
generated byarethe
Large complex resistor-capacitor snubber networks
Diodes
another. are
small forward found
They are in
voltage virtually
usedtodrop
as all
therectifiers
of between
cathode, drives
theindiodein
the
0.5ac one
and
will form
topass
dc or
1.5current.
Volts.If the voltage gate pulses. needed Needless
to preventtodamagesay, the fromGTO hadvoltage
excessive significantto the gate
another.
conversion They
Heat is generated are in
section. usedthe asdiode
Diodes
reverses,rectifiersinalso
areconduction in
proportion
used the toacsteer
stops. topractice,
to
In dccurrent,
the forwarddiodes have a and problems.
misfiring from the transient voltageslossesgenerated in by the and
conversion
current devices
protect times section.
thefromforwardsmallvoltage
Diodes
reverse forward
are also
voltage, voltage
used
drop. anddrop of
totosteer between
clamp current, 0.5 and 1.5 Volts.application Large size, power gating
Heat is generated in the diode in proportion to the forward snubbers,gate andpulses. Needless to say, the GTO had significant
cumbersome physical arrangements
application problems. Large size, power losses in gating and
protect
Diodes devices
voltage to defined
are found from reverse
inlevels.
virtually Their voltage,
alllocation
drives andinand to
one clamp
rating
form or
current times the forward voltage drop. characterize GTO
snubbers, andinverters
cumbersome andphysical
converters. Figures 3 and
arrangements Basic Problem
voltage
depends to
another. They defined
upon the levels.
are circuit
usedDiodes Their
asconfiguration.
rectifiers location
are foundin in the and rating
ac toalldc
virtually drives in one form or 14 show this dramatically. thyristor device
depends
conversion upon the circuit
section. Diodes configuration.
another. areThey also areusedused as torectifiers
steer current,in the ac to dc
Thyristor Devices conversion section. Diodes are also used to steer current, IGCT and SGCT. As we have seen, a chief shortcoming to turn off an IG
protect devices from reverse voltage, and to clamp GTO, but can r
Thyristor
In Devicesdevices
general, thyristor protect devices(SCR,from GTO, IGCT,
reverse SGCT)
voltage, and to clamp
of GTO devices is the external circuit required to fire and
voltage to defined levels. voltage Theirdefined location and rating are included on
In general,divert
internally thyristor some of the to
devices (SCR,
deviceGTO, levels.
output Their
IGCT,
and feed location
SGCT) it and rating turn off the device. In the mid-90s device manufacturers
depends upon the circuit configuration.
internally
back to thedivert some depends
gate circuit oftothe cause
upon the circuit configuration.
device it tooutputturn onand more feed it this energy. Th
made advances in GTO design that allowed faster
back to the
strongly.
Thyristor Forgatethiscircuit
Devices reason Thyristor
tothey cause areDevices
itsometimes
to turn on more called capacitors. Sep
In general, thyristor devices (SCR, GTO, IGCT, SGCT) switching if a large enough pulse were injected into the needed. So, the
strongly.
regenerative For
In general, thyristor this reason
devices.devicesThis they
internally
are
(SCR,
positive sometimes
divert some GTO,
feedback ofIGCT,
called SGCT)
decreases
the device output and feed it gate. To overcome the gate drive problems inherent in
regenerative
internally
voltage dropdivertdevices.
across some This
of
them, the positive
and device
gives feedback
output
a low and decreases
forward
back to the gate circuit to cause it to turn on more feed it
loss. the next section
previous GTO external gate circuitry, the device makers
voltage
However,
back to the dropthis
gateacross
also them,
makes
circuit and
them
to cause
strongly. gives
For relatively
itthis aturn
lowon
to reason forward
slow
they loss. called
areinsometimes
more Transistor De
regenerative devices.
developed printed circuit assemblies that mounted very
However,
strongly. For
switching thisthis
speed alsoand makes
reasonhard them
they
to arerelatively
turn sometimes
off. SoThis
gating positive
slow in
called feedback decreases
circuitry Background. T
voltage drop across them, and gives a low forward loss. close to the new device.
switching
regenerative
capacity speed
and and hard
complexity,
devices. This
However,
topositive
and turn off.feedback
switching
this also
So gating
losses
makes them ofcircuitry
decreasesthyristor
relatively slow in levels sufficien
capacity
device and across
voltagecircuits
drop complexity,
becomes them, and
the
switchingand switching
focusgives
speed for
and losses
a disadvantages.
low
hard forward
to turn ofoff. So gating circuitry The new arrangement was called the Integrated Gate
thyristor
loss.
device
However, circuits
this also becomesmakes thethem
capacity focus for disadvantages.
andrelatively
complexity, slow in
and switching Figure Thyristor,
losses of thyristorControlled 3. Water-Cooled (IGCT). GTO TheModule
use of aWith printedSnubber,circuit
Voltage Withstand. The device ability
circuits tobecomes
withstand the forward
focus for or
disadvantages. Figure
board literally Capacitors,
3. Water-Cooled
wrapped Gate
around Driver,
GTO the And
Module
device Devices
With
shortenedSnubber, gate
switching speed and hard to turn off. So gating circuitry
Voltagevoltage
reverse Withstand. The ability
is another key device to withstand
parameter. forward
Inwithstand or Figure 3. Water-Cooled
Capacitors, Gateinductances.GTO Module
Driver, With Snubber,
And Devices
capacity and complexity, Voltage andWithstand.
switchingThe lossesabilityoftothyristor forward or signal paths, and minimized Capacitors, Gate Since current
Driver, And Devices
reverse voltage
general, thyristor is devices
another key
have device
higher parameter.
voltage In parameter. In
key withstand
device circuits becomes reverse voltage
the focus is another
for disadvantages. device paths were very short, inductances were reduced so much
general,
levels (upthyristor
to 6000devices Volts)
general, have
per higher
device
thyristor voltage
than
devices thehave withstand
transistor
higher voltage withstand Figure 3.circuitsWater-Cooled GTO Module
that snubber were eliminated. GateWith losses Snubber,
were
levels
Revised:(up
Voltage to 6000 Volts)
Withstand.
7-07 levels
The per (updevice
ability to 6000 than
Volts)the
to withstand per transistor
device
© 2007than
forward TMEIC orthe GE
transistor
Automation Systems. All Rights Reserved.
Capacitors, Gate Driver, And Devices Page 4 of 28
also reduced. Packaging became easier. Figure 4 shows a
reverse voltage is another key device parameter. In typical IGCT device and associated parts.Page 4 of 27
Revised: 01-06-05 devices
general, thyristor Revised: have higher
01-06-05 © 2005 voltageTMGE Automation
withstand
© 2005 TMGE Systems, U.S.A.
Automation Systems, U.S.A. Page 4 of 27
 characterize GTO inverters and converters. Figures 3 and Basic Problem. The difficulty comes from the fact that
14 show this dramatically. thyristor devices are all current-switched. The pulses needed
to turn off an IGCT or SGCT device are shorter than for the
IGCT and SGCT.
characterize As we have
GTO inverters and seen, a chiefFigures
converters. shortcoming
3 and Basic Problem. The difficulty comes from the fact that
GTO, but can reach 4000 amps. Many electrolytic capacitors
of GTO
14 showdevices is the external circuit required to fire and
this dramatically. thyristor devices are all current-switched. The pulses needed
are included on each integrated firing circuit board to provide
turn off the device. In the mid-90s device manufacturers to turn off an IGCT or SGCT device are shorter than for the
IGCT and SGCT. As we have seen, a chief shortcoming this energy. The GCT shown in figure 5 shows 36 such
made advances in GTO design that allowed faster GTO, but can reach 4000 amps. Many electrolytic capacitors
of GTO devices is the external circuit required to fire and capacitors. Separate power supplies for each GCT are also
switching if a large enough pulse were injected into the are included on each integrated firing circuit board to provide
turn off the device. In the mid-90s device manufacturers needed. So, the apparent simplicity is really not there at all. In
gate. To overcome the gate drive problems inherent in this energy. The GCT shown in figure 5 shows 36 such
made advances in GTO design that allowed faster the next section we will show how this affects reliability.
previous GTO external gate circuitry, the device makers capacitors. Separate power supplies for each GCT are also
switching if a large enough pulse were injected into the Transistor Devices
developed printed circuit assemblies that mounted very needed. So, the apparent simplicity is really not there at all. In
gate. To overcome the gate drive problems inherent in Background. Transistors moved
close to the new device. the next section we will show howinto
thisvoltage
affectsand power
reliability.
previous GTO external gate circuitry, the device makers levels sufficient to control motors in the 1970’s. These
The new arrangement
developed wasassemblies
printed circuit called the that
Integrated
mountedGatevery Transistor Devices
Controlled
close to theThyristor,
new device.(IGCT). The use of a printed circuit Background. Transistors moved into voltage and power
board literally wrapped around the device shortened gate levels sufficient to control motors in the 1970’s. These
The new arrangement was called the Integrated Gate
signal paths, and minimized inductances. Since current
Controlled Thyristor, (IGCT). The use of a printed circuit
paths were very short, inductances were reduced so much
board literally wrapped around the device shortened gate
that snubber circuits were eliminated. Gate losses were
signal paths, and minimized inductances. Since current
also reduced. Packaging became easier. Figure 4 shows a
paths were very short, inductances were reduced so much
typical IGCT device and associated parts.
that snubber circuits were eliminated. Gate losses were
IGCTreduced.
also & SGCT devices also
Packaging haveeasier.
became much Figure
faster switching
4 shows a
typical IGCT device and associated parts.
IGCT & SGCT devices also have much faster switching Figure 5. 4000 amp GCT, Integrated Control Box
Components Exposed
Isolation Transformer
Gate Power Supply Figure 5. 4000 amp GCT, Integrated Control Box
devices required current injectionExposed
Components into their base terminals to
Isolation Transformer
conduct current. Power Darlington packages, combining two
Gate Power Supply or more transistors into one package to reduce base drive
devices required current injection into their base terminals to
requirements and increase device speed, were the first
conduct current. Power Darlington packages, combining two
Integrated transistor devices to be used in LV drive applications.
Gate Signal Unit GCT or more transistors into one package to reduce base drive
The power Metal
requirements and Oxide Field
increase Effect
device Transistor
speed, were the(MOSFET)
first
Integrated
Gate Signal Unit GCT
does not require
transistor devicescurrent to drive
to be used conduction
in LV in the
drive applications.
4.5kV-4kA semiconductor material. Its internal structure is very simple
The power Metal Oxide Field Effect Transistor (MOSFET)
and its gate is insulated. Voltage applied to the gate creates
does not require current to drive conduction in the
an electric field that permits conduction in the bulk
Figure 4. 4.5 KV 4 kV GCT, with power4.5kV-4kA
supply, & semiconductor material. Its internal structure is very simple
semiconductor material. In the early 1990’s the MOSFET
control power isolation transformer and its gate is insulated. Voltage applied to the gate creates
was combined in the same package with a traditional bipolar
an electric field that permits conduction in the bulk
Figure 4. 4.5 KV 4 kV GCT, with power supply, & transistor. This resulted in a new hybrid device, the IGBT.
times than control
their GTO predecessors. This allows better semiconductor material. In the early 1990’s the MOSFET
power isolation transformer IGBT.
was The IGBT
combined announces
in the one ofwith
same package its chief advantages
a traditional by
bipolar
waveform generation in PWM applications due to higher
switching speed. Faster switching times also produce its very name,
transistor. ThisInsulated Gate
resulted in Bipolar
a new hybridTransistor. The
device, the control
IGBT.
times than their GTO predecessors. This allows better signal is voltage, not current. Device control requires very
lower switching power losses. IGBT. The IGBT announces one of its chief advantages by
waveform generation in PWM applications due to higher low power. Circuits to control IGBTs are physically small,
The original
switching IGCT
speed. couldswitching
Faster block voltage
timesinalso
oneproduce
direction. its very name, Insulated Gate Bipolar Transistor. The control
use very few components, and therefore have an inherently
The latest
lower thyristor
switching incarnation,
power losses. the SGCT, is similar, but signal is voltage, not current. Device control requires very
low failure rate.
can block voltage symmetrically, that is, in both forward low power. Circuits to control IGBTs are physically small,
The original IGCT could block voltage in one direction. Lowvery
use Voltage IGBT Devices.
few components, andLow voltage
therefore (LV)
have IGBTs are
an inherently
and reverse directions.
The latest thyristor incarnation, the SGCT, is similar, but usedfailure
low in large quantities today in LV drives (output levels of
rate.
Device
can manufacturers
block would like that
voltage symmetrically, you is,
to think of forward
in both the <690 Volts). They are quite reliable when properly applied in
IGCT
and or SGCT
reverse as a single component. Drive
directions. Low Voltage IGBT Devices. Low voltage (LV) IGBTs are
this service.
manufacturers who use the SGCT or IGCT have used in large quantities today in LV drives (output levels of
Device manufacturers would like you to think of the BeforeVolts).
<690 IGBTThey devices
arerated
quitefor use onwhen
reliable MV properly
appeared,applied
two in
published the failure rate of the device alone as if it were
IGCT or SGCT as a single component. Drive engineers from Westinghouse, Derek A Paice and Charles
this service.
the whole assembly. A simple look at Figure 4, could lead
manufacturers who use the SGCT or IGCT have Edwards, came up with a novel arrangement of low voltage
an observer to consider the GCT on its own. However, Before IGBT devices rated for use on MV appeared, two
published the failure rate of the device alone as if it were drives connected in series to construct medium voltage
when you look under the component cover of the engineers from Westinghouse, Derek A Paice and Charles
the whole assembly. A simple look at Figure 4, could lead waveforms for motor control. We will discuss this drive in
assembly, the large number of discrete components Edwards, came up with a novel arrangement of low voltage
an observer to consider the GCT on its own. However, more detail later.
required to control the device is obvious. The picture in drives connected in series to construct medium voltage
when you look under the component cover of the
Figure 5 shows this clearly. Please take note of the scaling waveforms for motor control. We will discuss this drive in
assembly, the large number of discrete components
object, a hand-held calculator, which we will use again more detail later.
required to control the device is obvious. The picture in
later for another switching device.
Figure 5 shows this clearly. Please take note of the scaling
object, a hand-held calculator, which we will use again
later for another switching device. © 2005 TMGE Automation Systems, U.S.A.
Revised: 01-06-05 Page 5 of 27
Revised: 7-07 All Rights
© 2007 TMEIC ReservedSystems. All Rights Reserved.
GE Automation Page 5 of 28

Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 5 of 27

All Rights Reserved
 Medium Voltage IGBT Devices. By 1997, IGBT volt IGBT. The IGBT for this device comparison has a lower
technology had advanced to where a single device could voltage drop than the IGCT.
Medium
withstandVoltage
3300 Volts. IGBT Devices.
Current By 1997,
carrying IGBT
capacity quickly volt IGBT. The IGBT for this device comparison has a lower
technology had advanced to where a single
advanced to 1200 amperes for a single side mounted device could voltage drop than the IGCT.
withstand 3300 Volts. Current carrying capacity
plastic case device. Switching speeds of less than ½ ȝsec quickly
advanced
allowed veryto 1200 amperes for
low switching a single
losses and side mounted
accurate control.
plastic case device.
IGBT circuit designSwitching
requires nospeeds
bulkyof andless than ½
energy ȝsec
wasting
allowed very low
R-C snubber networks. switching losses and accurate control.
IGBT circuit design requires no bulky and energy wasting
Output
R-C Protection.
snubber networks. A native characteristic of the IGBT
provides designers with a built-in sensor to prevent IGCT Rated Amps = 750
Forward Volts ~ 4.5 to
Output due
damage Protection.
to short A nativeon
circuits characteristic
the output ofofthe theinverter.
IGBT 4.75
provides
Above thedesigners with a level,
design current built-inthesensor
devicetocollector-
prevent IGCT Rated
SOURCE:
Forward
Amps = 750
Mitsubishi
Volts ~ 4.5 to
FGC1500-130DS
damage
emitter (C dueE)toon-state
short circuits
voltageonclimbs
the output of the
rapidly. Theinverter.
gate
4.75
SOURCE: Mitsubishi
Above the design current level, the device collector-
circuit monitors C E voltage and detects this de-saturation FGC1500-130DS

emitter
condition.(C Gate
E) on-state
drive isvoltage
shut offclimbs rapidly. Thewithout
instantaneously, gate
circuit monitors
action from the mainC E voltage
control.andThedetects this de-saturation
gate driver signals the
condition. Gate control
microprocessor drive is of
shut
theoff instantaneously,
overcurrent without
condition. The
action
gate command firing is shut off, and the drive is shut the
from the main control. The gate driver signals Figure 7A. IGCT On State Voltage vs Current
microprocessor control of trip.
down with an overcurrent the overcurrent
In this way,condition.
the deviceThe is
gate command
its own protective firing is shut off, and the drive is shut
sensor. Figure 7A. IGCT On State Voltage vs Current
down with an overcurrent trip. In this way, the device is
Simplicity.
its The simplicity
own protective sensor. of the switching circuitry of
the MV IGBT is obvious and clear from a look at typical
Simplicity.
gate The simplicity
driver hardware. Figureof the switching
6 shows circuitry of
a dual 400-amp
the MV IGBT
3300-volt is obvious
transistor and itsand clearcircuit.
firing from aThelookblack
at typical
potted
gate driver hardware. Figure 6 shows a dual
firing module shown in Figure 6 controls two IGBTs. The 400-amp
3300-volt
whole module transistor and its
is smaller firing
than the circuit.
reference The black potted
calculator next IGBT Rated Amps =800
firing
to the GCT gate control shown in Figure 5. IGBTs. The
module shown in Figure 6 controls two Fwd Volts ~ 3.35 to 4.25
SOURCE: EUPEC FZ 800 R33 KF2
whole module is smaller than the reference calculator next IGBT Rated Amps =800
Fwd Volts ~ 3.35 to 4.25
to the GCT gate control shown in Figure 5. SOURCE: EUPEC FZ 800 R33 KF2

IGBT Dura-
Dura-Bilt5 Gate Driver
Dual package– larger ratings have 1/package Each board has 2 drivers, & fires 2 IGB
’s T

IGBT Dura-
Dura-Bilt5 Gate Driver
Dual package– larger ratings have 1/package Each board has 2 drivers, & fires 2 IGB
’s T
Figure 7B. IGBT On State Voltage vs Current

2 in, Figure 7B. IGBT On State Voltage vs Current

50 mm
More importantly, the device forward drop is not the whole
2 in,
story. The MV IGBT switches so fast (300 to 500
50 mm
More importantly,
nanoseconds, the device
typically) forward drop
that switching is are
losses not very
the whole
small.
story.
These The
low MV
lossesIGBT
go aswitches
long waysotofast (300 tohigher
offsetting 500 forward
nanoseconds,
conduction lossestypically)
when that switching
compared to thelosses
slowerareGCT
very small.
Figure 6. Dual 400 Amp, 3300 Volt IGBT These
switches. Table 2 compares the same IGCT and MVforward
low losses go a long way to offsetting higher IGBT
and Firing Circuit conduction losses 7,
devices of Figure when
fromcompared to the
a switching lossslower GCT The
standpoint.
Figure 6. Dual 400 Amp, 3300 Volt IGBT switches.
score? ForTable
these2comparable
compares the same IGCT
devices, and MV
the IGCT losesIGBT
450%
and Firing Circuit devices of Figure
more energy each 7, from
time a switching loss standpoint. The
it switches.
score? For these comparable devices, the IGCT loses 450%
more energy
Table 2. each time it switches.
Comparison of Total Switching Loss
IGBT Forward Voltage Drop. Forward voltage drop of
IGBT devices are sometimes higher than for thyristor IGCT vs MV IGBT
IGBT Table 2. Comparison of Total Switching Loss
devices.Forward Voltage
The reasons Drop.
behind this Forward voltage
are complex. drop of
In what
IGBT devices are sometimes higher than for thyristor IGCTIGCT
vs MV IGBT IGBT
may be an over-simplified explanation, this is because DEVICE - >
devices. The reasons behind this are complex. In what 750 AMP 800 AMP
traditional construction of IGBT devices and their internal IGCT IGBT
may be an inject
structures over-simplified explanation,
current carriers into thethis is because
semiconductor Turn On Joules
DEVICE -> 2.15AMP
750 1.92
800 AMP
traditional
from only oneconstruction
direction.ofThyristors
IGBT devices and their internal
are regenerative Lost/pulse
structures inject current carriers into the semiconductor Turn On Joules
Turn-Off Joules
devices, and once conducting, inject current carriers into 2.15
12.0 1.92
1.02
from only one direction. Thyristors are regenerative Lost/pulse
Lost/pulse
the semiconductor from two directions. More carriers can Turn-Off Joules
devices,
mean lowerandconduction
once conducting,
voltageinject
drop.current carriers into
Low forward Total Switching 12.0 1.02
Lost/pulse 14.15 2.94
the semiconductor from two directions.
voltage drop means lower on-state (forward dropMore carriers can
x amps) Joules lost/pulse
mean lower conduction voltage drop. Low forward Total Switching
heat losses. This is a good thing. However, IGBT voltage 14.15 2.94
voltage on-state Joules lost/pulse
drops aredrop
not means
alwayslower
greater (forward
than those for a drop x amps)
comparable
heat
IGCT.losses.
ReferThis is a good
to Figures 7Athing. However,
and 7B, IGBT avoltage
and compare 750
drops are not
amp IGCT always
from greaterwith
Mitsubishi than athose
EUPEC for a800
comparable
amp 3300
IGCT. Refer to Figures 7A and 7B, and compare a 750
amp IGCT from Mitsubishi with a EUPEC 800 amp 3300
Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 Systems,
TMEIC GE U.S.A.
Automation Systems. All Rights Reserved. Page 6 of 27 Page 6 of 28
All Rights Reserved
Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 6 of 27
All Rights Reserved

IEGT: More Advanced Yet. In late 1999, Toshiba
announced advances in semiconductor design that
combines low forward drop with all of the low gate drive
Figure 8. 4500 volt, 4000 amp IEGT
and Firing Circuit
advantages of IGBT technology. The new device was
named the IEGT, for Injection Enhanced Gate Transistor.
Figure 8 shows an IEGT and its associated firing circuit.
Notice the same calculator scaling object. IEGT devices
may one day displace traditional MV IGBT devices.
Special IEGT gate construction injects current carriers
into the semiconductor material from two directions, just
like the GCT. IEGT internal structures are simpler than
GCT. Combined with the obvious firing circuit advantages,
long-term manufacturing economies are possible.
Both press pack and one-side packages are in production.
Ratings of 4500 Volts and 4000 amperes are in service.
Comparing FIT Data: Current switched GCT vs. Voltage
switched IEGT / IGBT. Let’s take a final look at the GCT
and the IEGT (the most recent IGBT device) from a
reliability standpoint. A comparison of calculated device and
gating circuit FIT rates is very revealing.
FIT rate is the industry standard failure measurement of
statistical failures per billion hours. Note in Figure 9 that the
simpler IEGT Gate driver circuitry has a 3115 to 810, almost
4 to 1 FIT advantage over its IGCT counterpart. Base
calculations were for a 4000-amp device. Other ratings are
similar, but will vary by the total component composition.
When we compare the actual usage of devices in an inverter
system in a following section, we will see that this advantage
carries over to the assembled inverter as well. Note that
IGBT firing circuits are even simpler and have fewer
components than their larger IEGT counterpart. This means
that IGBT firing circuit FIT rates will be lower and therefore
potentially even more reliable than the IEGT example below.

IG C T vs IEG T C alculated Failure R ates of G ate D rivers

3500
Failures per Billion Hours

3000 IC

LE D
2500
F IL M C AP AC IT O R

2000 E L E C T R O L YT IC

R E S IS T O R (1 /4 )
1500 R E S IS T O R (P W R )
FITs

D IO D E
1000
FET

500 T R AN S IS T O R

0
IG C T IE G T

Figure 9. Calculated Comparison of IGCT and IEGT Gating Circuit Reliability

FIT Rate, Statistical Failures per Billion Hours

Revised: 7-07 © 2007 TMEIC GE Automation Systems. All Rights Reserved. Page 7 of 28

Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 7 of 27

All Rights Reserved
 level and the transformer windings. The motor voltage is
Drive Topologies - A High Level constructed and the current is controlled by the output
Overview switches O.
Because power devices are part of a larger circuit In both current source and voltage source drives, the motor
configuration, they cannot be considered on their own. It frequency is set to match the needed motor speed by the
is only when considered as part of the total circuit that output switches and control. Table 3 identifies these and
device advantages and disadvantages make sense. The additional characteristics.
following comparison of MV ac drive topologies will
discuss power devices in this context
Table 3. General Characteristics of AC ASDs
Major Drive Type Divisions Current Source vs Voltage Source
AC Adjustable Speed Drives (ASD) can be grouped into
two major categories: current source and voltage source. Task or Area Current Source Drive Voltage Source Drive
These categories do not refer to the semiconductors in the
drive, but to the type of dc link energy storage the drive Rectification Must be active control Diode or active control
uses. A reactor tends to keep current constant, and forms
the basis of the current source drive. A capacitor tends to DC Voltage
Varies to match needed
Fixed DC bus
motor volts
keep the voltage constant, and forms the basis for the
voltage source drive. Thus the drive type is named for the Energy Storage
Inductor – some energy Capacitors – no
source of the current and voltage to be fed to the motor by lost energy lost

the output converter. Average amps set by Controlled along with

Motor Current
input converter volts by output inverter
As described earlier in Figure 1 (General AC Drive), the
power flows through the conversion section through the Determined by motor Output switches
semiconductors and a dc voltage or current level is Motor Terminal
excitation, set by input modulate fixed bus to
Voltage
created. This dc level is switched to successive phases of converter construct voltage
the ac motor.
Utility side power With SCR source, Always high, little
In the current source drive (see Figure 10), the dc voltage factor varies with motor RPM variation
level M is varied to match the average motor terminal
voltage O, with energy stored in an inductor Nin the
form of current equal to the average real current in the Table 4. MV Drive Technology Chart
motor windings, which is proportional to the load torque. GE Toshiba MV Drive Examples
The inverter follows motor frequency, and torque is
GE or GE
regulated to reach the reference speed. Year Toshiba
Input
Output Inverter Current Status
Conversion
Model
Current Source SCR Thyristor In Production as
1979 LCI
GENERAL CURRENT SOURCE DRIVE ARRANGEMENT SCR Rectif 2300 - 4160 V Innovation LCI
Current Source Drive Current Source GTO Out of
1985 IMD
SCR Rectif 2300-4160 V Production
Volts Cyclo Utilty-Fed Replaced By
Motor 1990 SCR Thyristor
Converter Voltage Source Tosvert T650
UTILITY 1 2 3 Voltage Source MV IGBT NPC
Innovation Replaced By
1997 Multi-pulse Multilevel
Figure 10. Current Source General Drive Arrangement Type G Dura Bilt5i MV
Diode 2300 - 4160 V
Voltage Source LV IGBT Series
Innovation Replaced By
1999 Multi-pulse Connected Cell
Type H Dura Bilt5i MV
Diode Multilevel
In the Voltage Source Drive, (see Figure 11) the dc Innovation Voltage Source MV IGCT
Replaced By
voltage level N is always the same, set by the utility line 1998 Type SP IGCT Active NPC Multilevel
Tosvert T650
IGCT Source 3300 V
GE-Toshiba Voltage Source MV IEGT NPC
1998 Tosvert MV IEGT Active Multilevel In Production
GENERAL VOLTAGE SOURCE DRIVE ARRANGEMENT T650 Source 3300 V
GE-Toshiba Voltage Source IGBT NPC
Volts 1998 Tosvert IGBT Active Multilevel In Production
Motor T350 Source 1250 V
3 Voltage Source MV IGBT NPC
UTILITY 1 2 Dura Bilt5i
2002 Multi-Pulse Multilevel In Production
MV
Diode 2300 - 4160 V

Figure 11. Voltage Source Drive General Arrangement

Revised:7-07
Revised: 01-06-05 © 2005 TMGE Automation
© 2007 Systems,
TMEIC GE U.S.A.
Automation Systems. All Rights Reserved. Page 8 of 27 Page 8 of 28
All Rights Reserved
 MV Drive History x Wide motor frequency range
Table 4 summarizes drive history using the example of GE x Fast transient response
and GE Toshiba medium voltage drives, both historical x Regeneration
and in current production. Hundreds of these systems Power line impact
continue in successful operation today. x Harmonic currents produced
One drive, the Cyclo Converter, should be mentioned here x Power factor – measure of lagging power factor or ability to
for completeness, but it does not fit the general outline in work at unity or leading power factor
this paper. The cyclo converter is really a series of dc
x Harmonic currents – are filters required, meet IEE-519 1992
converters, which rectify utility power to sequentially feed recommendations
the phase windings of very large low speed synchronous
motors. Voltage source inverter technology provides Other important Points (not directly related to
superior dynamic and power system performance, and has topology)
displaced cycloconverters in new applications. x Cooling - air or liquid, heat losses into environment, water
cooling reliability
We began this presentation stating that ac adjustable x Installation issues, weights, degree of re-assembly at site
frequency drive technology grew in response to the x Rear / front access, cable entry locations (top or bottom)
availability of power devices. Some of the drives that first x Easy repair – roll-out or slide out power modules
appeared are still the best fit today in their area of strength. x True automatic tune – up
x Control, motor and load simulator
Drive System Comparison Points x Warranty – length, terms, parts and labor included
The following list presents some of the key points for x Service and parts support
comparing MV drive configurations. Some of the items x Rugged packaging
are self-explanatory. A brief comment may follow any
item that could require clarification. Listed first are those Load Commutated Inverter LCI
related to topology. Other important MV drive comparison In 1979 GE delivered and started its first LCI. In keeping
criteria are listed separately at the end for completeness. with the semiconductors development of the time, the LCI
System ratings used SCR devices. The general circuit arrangement is
shown in Figure 12.
x Power output levels
x Input voltage levels The LCI drive is of the current source family of drives as
x Transformer isolation – included? shown in Figure 10. The incoming rectifier converter
x Basic output motor voltages available
Packaging & mechanical features LCI Load Commutated Inverter
x Size - all components considering inverter, reactors, Current Source AC Drive
transformers, switchgear, heat exchangers, etc
SCR Volts Sync
System availability Motor
SCR DC Link
x Reliability – true FIT rate analysis of all system UTILITY
Inductor
components down to board level
x Low parts count – including components on sub-
assemblies such as gate cards, power supplies, etc Alternate: Multi-pulse/
Multi-channel Converter
x Simple firing circuitry – down to component level
x N+1 redundancy – ability to keep on running with one or
more power components out
Ease of startup, setup, troubleshooting Figure 12. Current Source Load Commutated Inverter

x Ability to run without a motor connected

Cost of ownership bridge or bridges create a regulated current in the dc link
x Low first cost inductor. The level of current is regulated to match the
x High efficiency motor current required to generate the torque needed by
x Life cycle – is this technology in its early middle or late load. The output inverter section also uses SCR's to switch
stage? Is the quantity of drives and devices in production the current from phase-to-phase in the connected motor.
at present enough to allay fears of obsolescence? The input section and inverter are fully regenerative.
Motor compatibility LCI drives are always used with synchronous motors. The
x Low motor insulation stress leading power factor within the synchronous motor is used
x Low motor current Total Harmonic Distortion (THD) to provide energy to commutate (turn off) the SCR
(Heating) inverter switches.
x Torsional effects, possible induced resonances in load
LCI drives were the first MV drive topology to be
Performance
introduced and they are still in current production. Over
x Smooth low speed operation 300 drives have been built in the last four years.

Revised: 01-06-05
Revised: 7-07 ©©2005 TMGE Automation
2007 TMEIC Systems,
GE Automation U.S.A.
Systems. All Rights Reserved. Page 9 of 27 Page 9 of 28
All Rights Reserved
LCI Comparison Points
The following list defines the key comparison points,
strengths and weaknesses of the LCI drive system.
Major LCI Strengths
x Low parts count
x Full Regeneration is inherent
x Rugged & proven reliable
x Economical at high hp
x SCRs can be supplied with N+1 redundancy
Major LCI Limitations
x Requires a controlled front end
x High motor current THD at low speeds
x Slow transient response
x Narrow motor speed / frequency range
x Reduced starting torque
x Limited low speed performance
x Synchronous motors only
x Poor line power factor at low motor speeds
x High ac power line harmonics unless multiple channels are
used – may require harmonic filters
x Torsional effects, possible induced resonances in load at low
speeds
System Ratings, Other
x Power output levels most practical above 6 megawatts
x Input voltage levels transformer isolated
x Transformer isolation –inherent
x Output voltages - actual inverter channels are usually either
2.3 or 4.16 kV. However, any practical motor voltage can be
accommodated through output transformers.
x Ease of startup, setup, troubleshooting: cannot run or test
without a motor connected.
Packaging & Mechanical Features
x Most LCIs in production today use liquid cooling, a sealed
system with redundant pumps and remote heat exchangers.
Early LCIs used forced air cooling.
x Sizes – separate enclosures or assemblies for inverter, reactors,
transformers, switchgear, and heat exchangers.
Cost of ownership
x System efficiency benefits from sync motor high efficiency
x Life cycle – this technology mature yet modern – designs have
been updated and all components are current
Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007
TMEIC GE
All Rights Reserved
Current Source Inverters (VSI)
Current Source Induction Motor
Drive (IMD)
1984 saw the introduction of the first GTO-based IMDs.
In keeping with the semiconductors development of the
time, the IMD used SCR devices for input conversion and
GTO (Gate Turn Off thyristor) devices for output
switching. The general circuit arrangement is shown in
Figure 13.
IMD Induction Motor Drive - Transformer Isolated
Current Source AC Drive
GTO /
GCT
Volts Induct
DC Link Motor
SCR Inductor
UTILITY
Alternate: Multi-pulse/
Multi-channel Converter
Figure 13. Current Source IMD Induction Motor Drive
Transformer Isolated
The IMD is a current source drive. The incoming rectifier
converter bridge or bridges create a regulated current in
the dc link inductor. The level of current is regulated to
match the motor current required to generate the torque
needed by load. The output inverter section also uses GTO
thyristors or (more recently) SGCTs to switch the current
from phase to phase in the connected motor. The converter
section and inverter are fully regenerative.
Power system issues
Power Factor Like the LCI, the IMD requires a current
controlled active rectifier to create dc current and voltage.
To the power system the current source induction motor
drive looks like a dc phase-controlled drive. Power factor
is always lagging, and roughly proportional to motor
output voltage. Since motor speed, output inverter
frequency and motor voltage track each other, this means
low speed presents a proportionately low power factor to
the incoming utility line. In MV drives the output level is
often in the megawatt range, so poor power factor is a
serious issue. Capacitor banks, tuned to absorb the power
line harmonics of the drive, are often supplied to restore
power factor to acceptable levels.
Power Line Harmonics. Hand in hand with poor power
factor is an unfavorable harmonic current spectrum. Power
system harmonics are currents or voltages having
frequencies that are multiples of the utility frequency. The
drive produces characteristic odd harmonics in multiples
of (n ± 1) where N is the number of pulses in the bridge
rectifiers (ie, 5, 7, 11, 13, 17 and so on). These harmonics
can be cancelled by using multiple, phase-displaced
windings on the incoming transformer combined with
Systems,
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Automation Systems. All Rights Reserved. Page 10 of 27 Page 10 of 28
 multiple 3-phase rectifiers. A 12-pulse rectifier has
harmonics below the 11th cancelled, while an 18-pulse
rectifier has harmonics below the 17th cancelled, etc.
However, because the input converter must be an active
current source, the rectifiers must all be thyristors. Each
thyristor rectifier must have its own the gating controls.
Additional circuitry is needed for thyristor protection.
Alternatively, tuned MV filters can be added to the utility
side of the drive to trap harmonic currents before they
propagate to the power grid. Switchgear, capacitors, and
inductors are used to construct these filters.
In a recent version of the current source induction motor
drive, SGCT switches have been proposed to create the dc
current source in place of the traditional SCR rectifiers.
This reduces problems with power factor and harmonics,
but at significant cost and complexity.
Current Source Induction Motor Drive
Performance
The current source induction motor drive relies on forcing
current into a storage inductor and switching this current
to the motor phases to produce output voltage and current.
The rate of change of this current determines the rate of
change of current and torque in the output load. This has
always limited the application of the IMD to loads like
pumps, fans, or conveyors, or loads that do not have a
requirement for high performance. Even in the recent
SGCT version IMDs, torque performance is published at
50 radians per second, only 10% of the 500-radian rate of
modern voltage source drives.
The current source induction motor drive does present
clean sine wave voltage to the motor. It does this as a
consequence of its output topology. Note the capacitor
across the motor terminals in Figure 13. This large MV
capacitor is needed for successful commutation of the
output inverter switches. As a minimum the capacitor can
be sized just large enough to supply the excitation
requirements of the motor. Because the capacitor is
directly across the motor, it tends to smooth the output
wave, especially above the mid-point of the speed range.
However, another effect of the output capacitor has always
been a hindrance: the capacitor will resonate with the
motor at some point. This introduces potential for electro-
mechanical resonances to occur in the driven load, with
potential serious consequences. IMD technology is one
reason why consultants still tend to require expensive
mechanical resonance studies with MV drive proposals. In
GE IMD drives, proprietary software actively modified the
drive output to avoid resonance conditions. In contrast,
voltage source drives have no inherent resonance issues.
GTO technology IMD drive lineups were very long.
Figure 14 shows a photo of a GTO-based current source
induction motor drive. Much of the package size came
from the snubbers and bulky gate control circuitry shown
by example in earlier Figure 3. GCT based drives are more
compact.
Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 TMEIC
GE Automation
All Rights Reserved
The GE GTO-IMD enjoyed a long and successful life,
with over 130 drives in service. The last IMD drive to be
commissioned was in 1998.
Two other points are worth mentioning in recent IMD
Figure 14. 1500 HP 4160-Volt
Water Cooled GTO IMD Induction Motor Drive
applications. First, drives are being proposed with no
isolation transformers. Instead series reactors are used to
provide a form of isolation of the converter from the utility
(refer to Figure 15). Transformerless design may cost-
reduce the incoming section, but subjects the motor
windings to voltage-to-ground levels far in excess of those
in a standard motor. As a result, standard design motors
IMD Induction Motor Drive - Inductor Isolated
Current Source AC Drive
Volts Induct
Motor*
UTILITY
"Isolation"
Inductor
SCR DC Link
or Inductor
GCT * non-
standard
Figure 15. Current Source IMD Induction Motor Drive
Inductor Isolated
cannot be applied. Retrofits to existing motors are not
recommended. Of course benefits of harmonic
cancellation from phase-shifted transformers or multiple
rectifiers are not possible either. One arrangement of
active SGCT front end and reactors claims to get around
the common mode voltage problem. It seems likely that
costs avoided by deleting the isolation transformer would
be lost in the additional cost of the GCT equipment.
The second point concerns the dc link reactor. The
efficiency of the drive must consider the energy lost in the
dc link storage reactor that is the central element of the
IMD drive. Sometimes the reactor is mounted remote from
the drive. Space requirements, accommodation and labor
for remote mounting, and heavy cabling – all present
factors that must be considered.
Systems,
U.S.A.
Systems. All Rights Reserved. Page 11 of 27 Page 11 of 28
IMD Current Source Drive Comparison Points Cost of ownership –

Here are some of the key comparison points, strengths and x Life cycle – GE GTO IMD is out of production – basic IMD
weaknesses of the IMD drive system. technology is out dated but has been made more current by the
use of SGCTs in place of GTOs
Major IMD Strengths
x Efficiency – Slow switching GTO devices and circuitry and dc
x Low power device parts count link inductors have negative effect on efficiency. The SGCT
version is somewhat better.
x Full regeneration is inherent
x Low Motor Current THD at mid to high motor speed Voltage Source Inverters (VSI)
x Low motor insulation stress when isolation transformer is used Voltage source inverters (VSI), as shown Figure 11, use a
x Low dv/dt on motor. fixed dc level as the energy source for the inverter. Figure
Major IMD Limitations 16 shows how the motor voltage output and currents are
constructed from the dc capacitor levels created by
x Requires a controlled front end, with extra parts and rectifiers from the incoming utility power. Pulse width
complications. modulation (PWM) is the dominant method for creating
x Slow transient response to fast changing loads. these waveforms. The output switches connect the motor
x Poor PF at low motor speeds. phase windings in plus and minus combinations, so that
x High harmonics unless multiple channels or SGCT PWM front
the average voltage across the motor terminals is very
end used. close to the average of a sine wave. Figure 17 gives a
more detailed trace of this wave construction. The sine
x Torsional effects, possible induced resonances in load due to
motor filter / commutating capacitor
wave in the middle of the pulses is drawn in for
illustration. The motor current is within 5% of sine wave
System Ratings, Other quality, as illustrated in the trace below the motor in
x Power output levels most practical above 1 megawatt Figure 16.
x Input voltage levels –if it is transformer isolated, only limited
by transformer.
x Transformer isolation – recommended, but not
always offered.
x Output voltages - originally 2.3 – 4.16 kV now up to 6 kV.
x Packaging & Mechanical Features – recent IGCT based drives
are air cooled in smaller sizes. Larger IMD drives use liquid
cooling, sealed systems and include redundant pumps.
x Sizes – separate enclosures or assemblies for inverter,
transformers, switchgear, and heat exchangers. Reactors can
be internal or external to lineup.
x Ease of startup, setup, troubleshooting: cannot run without a
motor connected.
Figure 17. Two Level PWM Inverter Phase Voltage Output

R e c tifie d 3 -P h a s e
1 .2

0 .8

PWM Motor Volts

0 .6

0 .4

3 Phase 0 .2

0
0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0

Diode Bridge
[+] DC Buss Rectified Power
AC Incoming
Line
Cap
Bank a
b
M
Th ree P hase In pu t

c
1.2

0.7
DBR
0.2

0 50 100 150 200 250 300 350 400

-0.3

-0.8

-1.3

[- ]

Motor Amps
Figure 16. Two-Level PWM IGBT Drive

Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 Systems,
TMEIC GE U.S.A.
Automation Systems. All Rights Reserved. Page 12 of 27 Page 12 of 28
All Rights Reserved
 MV Multilevel PWM Inverters.
The two-level modulation scheme is fine for low voltage
motors and drives (less than RMS 690 volt output). But
medium voltage drives and motors present a different
story. The sheer magnitude of the MV voltage is great – a
4160 volt sine wave has a peak value about 1.4 x 4160, or
5820 Volts. Even a thyristor device cannot switch this
level of voltage in a single step. Second, a standard motor
insulation system would likely fail if subjected to the peak
voltages from a two-level voltage wave.
The solution is to create multiple dc levels, and switch
between these levels. This can be done by creating several
LV buses and constructing the wave using several
independent 2-level inverters. This approach has been
used with moderate success, and will be described later.
Figure 18 shows a general diagram with multipulse diode
conversion and multiple dc levels switched by MV IGBTs.
Output Distortion
Distortion of the voltage and current feeding a motor load
is important because any current whose frequency is
anything but equal to the fundamental frequency causes
extra motor heating. Harmonic currents do not produce
significant torque. Here fundamental frequency refers to
the instantaneous, synchronous frequency of the motor.
For example, a motor with a base nameplate design
frequency of 60 Hz, at half nameplate RPM would have a
synchronous frequency of 30 Hz (plus or minus slip
frequency). Any frequency in the current fed to the motor
that is not at 30 Hz will create insignificant torque.
3 Level VFD Line-Line Output &
Reference Sine Wave
1.08
1.0 PEAK

0.7 RMS

Red = 3-level PWM Voltage output

0.2
[+]
N 0 50 100 150 200 250 300 350 400

[-]

[+]
N MOTOR
[-]
Figure 19. Simulated Inverter Voltage Waveforms
3 / 5 level NPC PWM
[+]
N
[-]

Figure 18. Multi-Level Voltage Source MV PWM Inverter

Output Levels
The more dc voltage levels that are created, the more
choices are available for the MV switches to form the
output wave. From a practical standpoint, three dc bus
levels (plus, minus, zero) are fine for motor voltages up to
2400 Volts, and 5 dc bus levels are good for motors of
4160 volt or greater. These happen to fit nicely with the
voltage rating of a range of MV switching devices.
Figures 19 and 20 show a 3 / 5 level (2300 volt RMS) and
5 / 9 level (4080 volts rms) voltage waveforms. In figure
19, three available power supply voltages produce 5 Figure 20. Inverter Voltage & Current Waveforms
possible line-line voltages. In figure 20, five available 5 / 9 level NPC PWM
Voltage RMS = 4080 volts
power supply voltages produce 9 possible line-to-line
voltages. This is what referring to the output as being 3 / 5
or 5 / 9 level means.
Using more levels allows the voltage wave to more closely
approximate a true sine wave. Through good PWM
algorithms, the current wave can be very close to
sinusoidal. In recent testing of a 5 / 9 level inverter, RMS
voltage distortion was measured at less than 6%, with
current distortion of less than 3%.

Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 TMEIC Systems,
GE Automation U.S.A.
Systems. All Rights Reserved. Page 13 of 27 Page 13 of 28
All Rights Reserved
In practice, current distortions of less than 4% are (IGCT, SGCT) the switching time is about 5 ȝsec. The
considered inconsequential from a motor heating transient voltage theoretical maximum appears at a cable
standpoint. Most PWM technology based drives can easily length of about 600 feet. However, with inverters that use
achieve this. the fastest switches (IGBT or IEGT) the voltage
transitions in about 0.5 ȝsec and the cable length for
One Final Note About Output Levels
theoretical maximum is about 60 feet. While the
Certainly one advantage of power device development is
theoretical level of dc pulse overshoot is 2.0 to 2.2 times
that higher current and voltage rated devices generally
the dc level, in practice in larger inverters it is about 1.85.
means that fewer devices can be used. This is a good
thing. Fewer devices and fewer parts mean lower failure
rate and potentially higher reliability.
But here is the tradeoff. Many power devices (IGBT or
IEGT) have a voltage rating such that two devices are
needed in series to achieve 4160-volt output, resulting in a
parts-count drawback. But as a consequence of having the
devices, a 5 / 9 step voltage wave is produced. Low
inherent voltage distortion results in an easier job in
producing low current distortion and low motor heating. In
contrast, higher voltage-rated switching devices like
IGCTs can produce a 4160 volt motor RMS voltage with
only 3 levels and will require fewer devices in series. But
the 3-level inverter at the 4160-volt output level is too
rough, requiring large L-C filters to smooth inverter output
to the motor. In practice, all known 4160 volt or greater
IGCT PWM drives in production today produce 3 / 5 level
output and use such sine wave filters on every drive. Figure 21. IGBT Inverter Switch Voltage Transition
More On Filters With No Filtering And A Long Connected Cable
Sometimes output filters on drives are necessary for the
operation of the inverter itself. Recall that in the case of
the current source IMD drive they are necessary as part of DV/DT Filters
the switching scheme to achieve smooth current The chief concern from high switching speed is that the
transitions. Also we noted in our IMD discussions that transient voltages show up at a high rate of rise, or dv/dt.
having capacitors directly across the motor could result in This fast rise means high frequencies are present. High
significant problems with parallel resonance between the frequency voltage pulses tend to distribute unevenly
motor and the caps. across the motor winding, appearing across the first few
In the case of the IGCT drive’s sine output filter, the main turns on the end turns of the windings. By reducing the
purpose of the capacitors is to smooth out the 3-level sine rate of rise, the dv/dt filter spreads the voltage increase
wave, filling in all the gaps between levels and individual over much more surface of the winding. Extra stress is no
pulses with energy stored in the caps. It is noted that not longer placed on winding end-turns so this is no longer a
all IGCT PWM drives use traditional multilevel PWM. concern. Any remaining voltage stress shows up within
However, because there is real power and energy the winding slots, where the insulation consists of both
exchange between the motor the inverter and the caps, the winding and ground wall insulation. The total insulation
capacitors in an IGCT sine filter must be quite large. This level in the slot, being higher, gives added protection from
raises the same concern over parallel resonance as in the harmful effects of transient voltages.
IMD current source drive, with its potential damaging
torques in the motor and drive train.
Another reason a filter may be applied is that the leading
edge of the voltage pulses of all voltage source PWM
inverters rises to the dc level of the fixed bus on every
transition. The leading edges of the pulses contain high
frequency components. Since a typical motor and its cable
present a high impedance to high frequencies, the power
cables tend to encourage transient overvoltages at the
leading edge of the pulses above the applied dc level. For
an example of this overshoot, refer to the trace in Figure
21. The faster the switch, the shorter is the cable length
required before the transient voltages build to the
theoretical maximum levels. With thyristor devices

Revised: 7-07
Revised: 01-06-05 © 2007
© 2005 TMGE TMEIC GE
Automation Automation
Systems, Systems. All Rights Reserved.
U.S.A. Page 14 of 27 Page 14 of 28
All Rights Reserved
 Figure 22 shows a simple L-R-C network that can be
supplied to reduce the voltage rate-of-rise of an IGBT
drive so that the overshoot condition just discussed is
From
Inverter
To Motor
Figure 22. L-R-C DV/DT Filter for MV PWM Drive
minimized. The capacitors are quite small. A practical
dv/dt filter typically extends the output pulse rise time
from 0.5 ȝsec to about 4 ȝsec. This has the effect of
allowing a longer cable before peak voltages are
experienced (about 450 feet).
So what has experience shown? With over 85 GE and
GE Toshiba MV IGBT PWM drives running, at output
levels of both 2300 and 4160 Volts, there has never been a
report of any insulation problems. None of the (37) 4160
volt GE drives, whether on new or old motors, has any
dv/dt filters included. The 2300-volt drives are 3-level
drives, and about 20 of the 50 plus units running had
voltage overshoot protection. The rest had no filters, with
no reports of trouble in over five years of service.
Neither has any cable on drives at either 2300 or 4160
Volts experienced any insulation problems. This is in
keeping with various reports and industry papers, where
no reports of cable failures have been attributed to their
use on IGBT MV drives.
It is GE Toshiba’s practice not to promote or recommend
medium voltage dv/dt filters except for insurance reasons,
such as applying the dv/dt filter for feeding older motors,
motors with questionable insulation integrity.
Utility Power System Issues: A Multilevel Voltage
Source Inverter Advantage
Under our discussions of the IMD (current source
induction motor drive), the topic of power system
harmonics and power factor were introduced. In the multi-
level inverter, line harmonics are controlled and good
power factor is maintained in one of two ways:
x With feed transformers having multiple windings that
are phase-shifted with respect to each other, diode
rectifiers present a high true power factor (kW / kVA),
typically 0.95 lagging or better. Additionally, harmonic
currents except those of multiples of harmonic number
N1 are cancelled, where N is the total number of
rectifiers in the 3-phase groups. Example: 4 windings, 6
Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 TMEIC
GE Automation
All Rights Reserved
diodes per bridge = 24 pulse configuration. All
harmonics except those numbered as even multiples of
(24 ± 1) are attenuated by 90% or more.
x With a single 3-phase winding per voltage level, active
switches, connected as an inverter in reverse, can be
used as rectifiers. The firing patterns can be arranged to
produce less than 5% harmonic distortion in current if
enough impedance is included in the line source. Also,
an active bridge allows the drive to pass back power to
the power line, that is, to regenerate. The active front
end has even been used to create leading power factor to
offset voltage drop in long utility feed cables.
Usually, the lowest cost approach to optimize power factor
and reduce line current harmonics is to use multi-winding
transformers and diode rectifiers. Most applications do not
require regeneration ability, and the active front end adds
expense and requires all the control components
associated with a full drive.
Multi-level Voltage Source PWM Inverter
With MV IGBTs
The advent of true MV IGBT transistors signaled the
beginning of a new generation in MV drives. In 1997 GE
introduced the first generation of MV drives built around
the MV IGBT. Three other advances made the package
complete, including:
x A powerful signal processor electronics package was
developed to form the heart of the new system.
x A cooling system was designed around heat-pipe
technology that gave the new drive water-cooled
thermal efficiency and small size with air-cooled
simplicity.
x Designers chose an optimum inverter arrangement
called Neutral Point Clamping (NPC), originally
introduced to the industry in the 1980’s. Through
clamping diodes in the output bridge and the switches,
the output levels are center-point (neutral) referenced.
The neutral point is shown by the N designation in
Figure 24. By clamping the neutral point, the motor
experiences much smaller voltage excursions than
inverters without such reference. The NPC design
produces small voltage steps on the motor and puts low
stress on the motor insulation system.
Systems,
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Examples. Figure 23 displays an overall block diagram of containing all the elements of the phase-module drawing
a Multi-level Voltage Source Inverter using MV IGBT in Figure 24.
switches. Figure 24 gives details of the three phase
Summary of MV IGBT in MV PWM Drives
modules of the 5 / 9 level version shown in Figure 23.
Our earlier review of power MV IGBT devices and their
advantages will serve as a backdrop to the points below.
Voltage Source Diode Rectifier Consider these items:
Med Voltage IGBT PWM Inverter x Because of their high 3300-volt rating, few devices are
Multi-Winding needed to form output bridges for 2300, 3300 or 4160
Transformer
volt drives.
Ind or x Because of their fast switching speed, precise PWM
Sync
Motor
wave shaping can be done, allowing very low output
distortion, low torque ripple, and accurate current
Multi-Pulse control.
Diode Rectifier
Liquid Filled MV-IGBT x Because of their high current ratings, devices usually do
Power Caps NPC Inverter not have to be connected in parallel to achieve high
output power levels.
Figure 23. MV Multilevel Voltage Source Inverter
With MV IGBTs x Because of their very low gating power requirements,
the very simplest of gate circuitry can be used,
increasing reliability.
The GE version of the voltage source MV multi-level

24-P Source W-Phase Leg

24-P Source V-Phase Leg

24-Pulse U-Phase Leg

Source Assembly

M
N

Voltage Optical
460 Vac Detection Link
Module Module

Figure 24. Details of 1 of 3 Phases

of a 5 / 9 Level MV IGBT Inverter

drive was called the Innovation Type G. About 80 of these

drives are in service today.
Figure 24A. Example Inverter Section of MV IGBT
In 2002 the first of the next generation MV IGBT heat- PWM Drive Using Heat Pipe Cooling
Showing Power Module Rollout Construction
pipe cooled drives was installed in a co-operative effort
between joint venture partners General Electric Company
and Toshiba Corporation of Japan. Manufactured in
Houston Texas, the latest drive, called the Dura-Bilt5i
MV£, employs the best of GE and Toshiba drive
technology. Like its Innovation Series£ Type G MV drive
predecessor, it uses the NPC inverter bridge arrangement.
All models have dc bus rectifiers in a 24-pulse
arrangement for less than 2.5% utility current distortion
and utility power factor better than 0.95 lagging. Figure
24A shows a complete power module on rollout slides,

Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 Systems,
TMEIC GE U.S.A.
Automation Systems. All Rights Reserved. Page 16 of 27 Page 16 of 28
All Rights Reserved
 Example
Example MV MV IGBT
IGBTNPCNPCDrive
Drive
® £
GE
TMEICToshiba Dura-Bilt5i
GE Dura-Bilt5i MVMV
A photo of a current production MV IGBT NPC drive
system is shown in Figure 25. On the left of the lineup is a
full-voltage bypass and output contactor assembly. The
center converter section consists of the incoming line
compartment (upper left), and the transformer and rectifier
bridges. The right section holds the 3 rollout inverter
modules (one per motor output phase), and the
microprocessor control. For reference, the drive is 122
inches long, and is rated 2000 hp output at 4160 Volts.
Figure 25A shows the operator keypad of the drive. From
the keypad, the operator can start and stop the drive. All of
the key operating variables within the control can be
monitored in numerical and bar-graph form. Diagnostic
fault messages are reported. A dc signal instrumentation
output interface is included. An EthernetTM port allows
connection to computers for configuration and monitoring.
Figure 25B (next page) shows an explanatory diagram of
Figure 25A. Example Dura-Bilt5i MV Drive Display
the heat plate cooling arrangement of the Dura-Bilt5i MV
drive. The cooling plate extracts heat almost as efficiently
as liquid-cooled system, without the complications of
pumps, hoses, etc. By keeping the semiconductor device
temperatures even over their mounting surfaces, IGBT life
is extended.

® £
Figure
Figure25.
25.Example
ExampleGE
TMEICToshiba Dura-Bilt5i
GE Dura-Bilt5i MVMV
2000 HPHP
MV 2000 MVMV IGBT
IGBTBased
BasedVoltage
Voltage Source PWMDrive
Source PWM Drive
IncludingTransformer,
Including Transformer, Converter,
Converter, Switchgear
SwitchgearAnd
AndInverter
InverterModules
Modules

Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 TMEIC Systems,
GE Automation U.S.A.
Systems. All Rights Reserved. Page 17 of 27Page 17 of 28
All Rights Reserved
 High Efficiency Plate Heat Exchanger for IGBTs
How it works
• Devices are mounted to side of
plates
• Current flow generates heat in
devices
• With only a few degrees of
temperature rise, coolant is
vaporized within the plate
• Vapor rises to the top condensing
unit passages
• Heat is removed by airflow over
fine fins, which liquefies coolant
• Coolant returns to base of chill
plate for next cycle

Figure 25B. Example Dura-Bilt5i MV Heat Plate Cooling Arrangement

MV IGBT NPC Drive Comparison Points System Ratings, Other

Here are some of the key comparison points, strengths and
x Power output levels 200 to 5000 HP at 4160 Volts, 200 – 2500
limitations of the MV IGBT NPC drive system HP at 2300 Volts.
Major Strengths Units may be paralleled for double HP
x Low parts count x Input voltage levels -since it is transformer isolated,
up to 15 KV.
x High system Mean Time Between Failures (MTBF)
x Transformer isolation - inherent
x DC link energy is stored in liquid filled power capacitors
x Output voltages - 2.3, 3.3 or 4.16 KV
x Rugged & proven reliable
x Packaging and Mechanical Features - air-cooling to 5000 HP,
x Economical 400 – 10,000 HP parallel units are practical.
x Small footprint x Sizes – single integral lineup makes smallest unit. Larger units
x Fast response can separate transformer and converter from Inverter
x Wide range of speed and torque control x Ease of startup, setup, troubleshooting: modern controls
x High starting torque contain startup wizards and automatic tuneup routines and
built in test mode motor simulator.
x Very low motor current THD
Cost of ownership
x Low harmonics on power input
x High true power factor over whole speed and load range x System efficiency of > 96.5%, including transformer
x Synchronous or Induction motor compatible x Life cycle – this technology is solid and growing. More and
better devices, such as IEGTs will only improve present
x No significant torque pulsations designs.
x Self-sensing output protection
x Can run in test mode with motor disconnected
Major Limitations
x Regeneration is not possible
x Power device redundancy not practical
x IGBT switching speed can produce motor waveform transient
voltages and some installations may require dv/dt filter on
drive output,

Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 18 of 27

Revised: 7-07 © 2007
All TMEIC
Rights GE Automation Systems. All Rights Reserved.
Reserved Page 18 of 28
 Multi-Level Voltage Source PWM MV
Inverter Using LV IGBTs
As mentioned earlier, low voltage IGBTs are used in large electrolytic capacitor. There are four functional IGBT
quantities today in low voltage drives (output levels of switches, which create dc PWM outputs that add to the
<690 Volts). They are quite reliable when properly applied PWM outputs of its series-connected companion modules
in this service. to create the output wave of each motor phase.
The drive can be air-cooled (usually at 3000 HP or below)
Before the advent of medium voltage IGBT devices, two
or water-cooled. Water-cooled drives usually have water-
engineers from Westinghouse, Derek A Paice and Charles
cooling of both transformer and inverter modules.
Edwards, came up with a novel arrangement of low
voltage drives connected in series to construct medium Output Voltages Over 4160 Volts
voltage waveforms for motor control. This arrangement is In areas such as China, Europe, Japan, and Asia, industrial
shown in the diagram in Figure 26. We will refer to the and infrastructure development seems to be moving
design as Paice technology, in reference to its early toward 6.0 or 6.6 kV system voltage levels. Power device
origins. ratings have not progressed to allow the 5 / 9 level NPC
design of the previous section to be applied at voltages
The voltage waveform output looks very similar to that in
above 4160 volts economically. NPC inverters would need
Figure 20. The control creates the sine wave by turning on
added devices in series or transformers between the drive
modules successively. The cell types vary by voltage
and the motor to achieve these motor voltage levels. The
output levels, varying in ac input from a nominal 460 to
Paice design can be extended to higher voltages by adding
690 Volts, and nominal dc link voltage from 620 Volts to
additional identical power modules in series to build the
930 Volts. Theoretically, as many modules and steps as
higher voltage waveform. At the present time, this could
desired can be used to create any reasonable MV
provide a reasonable tradeoff of function versus
waveform. Common output motor voltages are from 2300
complexity.
to 6.9 kV. The module-to-module voltages are far in
excess of the typical 1700 max LV IGBT transistor rating. Details & Comments
By virtue of using many complete LV inverter modules to
Module Details
do the MV job (typical 4160 volt drive uses a minimum of
Detail A in Figure 26 shows the typical power components
12 inverters) there are numerous parts in this drive
of each of the power modules. A 3-phase rectifier (six
configuration.
diodes) creates a local dc bus. Energy is stored in the

TYPICAL LV IGBT POWER MODULE

Fixed DC
Bus
ELECTROLYTIC
Diode CAPS Inverter
Rectifier (IGBT) A

Figure 26. Multi-level MV Voltage Source PWM Inverter

Using LV IGBT Drives in Series (Paice Design)

Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 19 of 27

Revised: 7-07 All Rights
© 2007 TMEIC Reserved
GE Automation Systems. All Rights Reserved. Page 19 of 28
Table 5 compares a typical 1000 HP Paice design 12-
module drive using LV IGBTs with its 4160 volt MV
IGBT counterpart.
Table 5. MV Drive Power Device Count
MV IGBT Design vs LV IGBT Paice Design
Drive IGBTs Diodes Caps
MV IGBT 24 72 6 high quality capacitors and applying the capacitors with
LV IGBT 48 72 168
The parts count above is a dramatic comparison. The
capacitor count in particular stands out. The capacitors are
electrolytic units, used in series to get voltage rating, and
in parallel to get energy storage.
Electrolytic capacitors. Electrolytic capacitors in LV
PWM drive service have a published life. Some
manufacturers (such as GE Fuji, Model AF300 G11)
actually alert the operator of the need to change out the
electrolytic capacitors. They could be termed an electronic
consumable item.
Temperature and even slight overvoltage is the enemy of
electrolytic capacitors. For about two years, GE built its
Innovation Series£ MV drive, Type H using a Paice-
topology bridge with a GE Innovation Series£ control.
Such a drive lineup is shown in Figure 27. In the years
these drives have been in service, some sites have seen
service extremes of temperature and voltage (wandering
plant bus levels, low air flow, high room temperatures). In
at least two cases, serious power bridge problems resulted
in downtime of critical processes. In these cases capacitor
Figure 27. Example GE Innovation Series£ Type H Multi-level MV Voltage Source PWM Inverter
Using 5 LV IGBT Drives in Series Per Phase, Integral Power Transformer (Paice Design)
Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 Systems,
TMEIC GE
Automation Systems. All Rights Reserved.
All Rights Reserved
failure led to module damage and subsequent outage time.
One thing can certainly be learned from this: users must be
very careful to keep any inverter, especially those with
electrolytic capacitors, well within published limits of
temperature and incoming voltage.
Where Paice technology is used, rigorous component
standards must be used to reduce their sensitivity to
potential capacitor problems. This includes using selected,
proper margins in temperature, operating voltage, and
ripple current.
Power Device Redundancy
When LCI drives were introduced, they were often applied
to high-horsepower, energy intensive critical process areas
as induced draft fans for boilers. MV drives were then a
promising but fledgling technology. Users were nervous
about accepting MV ac drives. As engineers considered
how to increase the potential reliability of the new
systems, they introduced the concept of power device
redundancy. An additional SCR device, beyond what was
needed for conservative design, was inserted into each
series device string in the converter and inverter sections
of the LCI. In justifying and using this approach the logic
of the design team was approximately as follows:
1. The switching devices used were SCR thyristors
connected in series as needed to achieve the required
voltage rating (this has not changed in LCIs in current
production).
2. The normal failure mode of SCR devices is to short out
– to remain permanently ON in both directions.
U.S.A.
Page 20 of 27 Page 20 of 28
 3. Since device failure rate is very low anyway (about 80 Table 6 below gives a comparison of an LCI drive with
per billion hours), adding an additional spare device N+1 device redundancy with a Paice inverter with an extra
would not decrease the overall normal system power cell per phase.
reliability significantly.
Table 6 N+1 redundancy comparison
4. By adding a spare device, operation could continue LCI vs Paice MV drive
until maintenance repair could be done. Early controls
did not even detect when an SCR had failed – the drive Comparison LCI SCR Device Paice Power Cell
just kept running. No control action is needed. The Point N+1 Redundancy N+1 Redundancy
most modern LCI controls detect a failed device, so the
device that failed can be replaced. 18 diode Rectifiers
Number of power
12 LV IGBTs
The SCR redundancy methodology was pioneered and circuit devices 12 SCRs
15 bypass SCRs
introduced by GE into LCI and later into the SCR added *
42 electrolytic Caps
converter section of its GTO-IMD current source drives. It
became known as (N+1) redundancy, from the thought Control action Control must detect
No action - failed
process that, if quantity N SCRs is needed, adding one required to failed power cell and
device conducts on
execute command SCR in
more redundant device makes the count N+1. In practice, its own
redundancy cell to bypass it.
most GE LCI drives were shipped with N+1 redundancy.
It was offered originally to calm users’ fears. The sales Is power device
Yes No
premium for N+1 in SCR LCI drives is quite small, so it is fail-safe? **
not surprising that few purchasers have elected to delete * LCI drive with 6-6 pulse configuration
the option. ** SCR device normal failure is "On" in both directions
Where does N+1 make sense today? The GE N+1 SCR
The comparison of Table 6 clearly indicates that the Paice
concept required no addition of parts except an extra
inverter “N+1” concept implemented by power cell
power switch of high reliability. If modern topologies
redundancy is not equivalent to the original N+1 device
could offer the same (add 1 extra device per group, no
redundancy that has served the industry in LCI drives.
other overhead) N+1 could then be used for a potential
There are more parts, added control complexity, and lack
overall benefit.
of inherent fail-safe operation. The control itself is not
Recent Appearances of “N+1” Versions of the Paice- redundant and must be intact to cause any cell bypass.
design LV-IGBT have been offered and built with “N+1” From a FIT (failure analysis) standpoint, the added parts
redundancy. Here the meaning of N+1 has changed from may actually introduce more statistical failures than they
the inclusion of an extra SCR device to mean the inclusion overcome. In practice when a power module in a Paice
of a complete power cell inverter (see detail A of Figure inverter fails, it sometimes does so in such a way that the
26) per motor output phase. Under this scheme, if any module is severely damaged. It is then unable to process a
power cell fails for any detectable reason, the control tells bypass command from the control.
the bad cell to short itself out with an extra bypass SCR
Note one final issue. While any module is running
that is optionally added to every cell in the inverter. The
“bypassed”, transformer ac voltage still energizes the
added voltage capability of the extra cell is then used to
rectifiers and capacitors of the module. Energy can still be
replace the voltage of a failed cell. The control
fed into failed components within the unit, possibly
compensates, re-balancing the remaining cells to construct
causing additional damage.
the output waveform.
In actuality, such a bypass scheme primarily protects from A few last words on reliability and N+1 redundancy in
a loss of one IGBT, or loss of IGBT firing control for any Paice Designs. Recent purchase specifications issued for
variety of reasons. If, however, two IGBTs fail shorted, or MV drives have included the requirement for N+1 power
gate on simultaneously, high currents flow from the local device redundancy. As shown, the addition of an extra
capacitors. These local currents may cause so much SCR in each bridge circuit of LCI drives made sense. Also
damage to the IGBT and its surrounding components that as shown above, in Paice designs, such redundancy may
the module no longer has the integrity to be functionally not deliver any user benefit, and may actually harm overall
bypassed. reliability. Including additional redundant power cells to
improve availability is the opposite of the traditional
One reason users may elect to purchase any “N+1”
approach, which is to eliminate parts to improve reliability
offerings would be to reduce fears of drive shutdown from
and then reduce stress levels on remaining components by
power device failure. Does N+1 implementation in Paice-
conservative application. While power cell “N+1”
topology MV drives meet the original simplicity criteria of
redundancy may be an allowable way of approaching
redundant SCRs outlined above? Can it potentially offer
reliability, it should not be a requirement.
increased availability?

Revised: 01-06-05
Revised: 7-07 ©©
2005 TMGE Automation
2007 TMEIC Systems,
GE Automation U.S.A.
Systems. All Rights Reserved. Page 21 of 27Page 21 of 28
All Rights Reserved
MV Paice Topology LV IGBT Drive Cost of ownership
Comparison Points x System efficiency of > 96%, including transformer
Here are some of the key comparison points, strengths, x Life cycle – this technology is presently widely used.
and limitations of the MV Paice technology drive system.
Multi-Level Voltage Source MV IGCT
Major Strengths
PWM Inverter
x Fast response, wide range of speed and torque control
The Integrated Gate Controlled Thyristor (IGCT) appeared
x Low motor current THD
about the same time as the MV IGBT (refer to Figure 2).
x Low harmonics on power input and high true power factor Not long after, MV PWM IGCT inverters with the NPC
over whole speed range
(Neutral Point Clamped) topology appeared. Refer to the
x Synchronous or induction motor compatible NPC topology discussions under the MV IGBT PWM
x No significant torque pulsations drive section above.
x Extra cell redundancy is possible Because the IGCT itself can be made in a voltage rating of
x Can run in test mode with motor disconnected 6.0 kV or more per device, NPC inverter bridges can be
Major Limitations built in 4160 volt configurations with only two devices in
series, as shown in Figure 28. To take advantage of the
x N+1 redundancy adds parts with corresponding risks of higher device rating and use fewer devices, inverters built
additional failures
around IGCTs are usually 3-level inverters. Although
x DC link energy is stored in limited life electrolytic capacitors control algorithms other than PWM are used, the
x High parts count can mean low MTBF waveform in Figure 19 is still illustrative of the 3-level
x Regeneration is not possible topology output. For output voltages higher than 3300 a
full sine wave output filter (discussed earlier) is usually
x Large footprint for higher hp
included in the system. Figure 28 illustrates this.
System Ratings, Other
Converter Options The harmonic current limit
x Power output levels most practical 300 – 2500 HP at 2300 v., recommendations in IEEE 519 1992 are often required to
300 to 10,000 HP 4160 – 7200 v
be met at the terminals of MV drives. Figure 28 shows an
x Input voltage levels –integral transformer isolated, up to 15 input rectifier of 12-pulse configuration. This
KV, possibly higher configuration has a current THD typically near 12%. The
x Transformer isolation - inherent IEEE 519 limits for most power systems are usually lower
x Output voltages - 2.3 to 7.2 KV, higher voltages possible with than 12%, and many purchase specifications require 5%
more power cells distortion.
x Packaging and mechanical features – air-cooling to 3000 HP,
liquid cooling above, including liquid-cooled transformer
x Sizes – single integral lineup. Separate / remote transformer
not practical

Motor

Figure 28. MV 3-level IGCT NPC Voltage Source Inverter

With MV IGCTs

Revised: 7-07
Revised: 01-06-05 © 2007
© 2005 TMGE TMEIC GE
Automation Automation
Systems, Systems. All Rights Reserved.
U.S.A. Page 22 of 27 Page 22 of 28
All Rights Reserved
 shows one such equipment lineup. They were applied in
In order to meet harmonic distortion limits, the alternate
high-performance synchronous motor steel mill
converter configurations shown in Figure 29 can be used
applications.
to develop the two bus levels needed for the IGCT
inverter.
Detail A illustrates an active IGCT converter. With
sufficient input source reactance isolation and proper
firing algorithms, it is possible to achieve low current
THD with a single winding transformer feeding the
converter. Detail B shows a 24 pulse diode-fed converter.
Its inherent current THD is 3% or less.
Two additional advantages are provided with the active
converter front end. First, the converter is now fully
regenerative, allowing braking control of overhauling
loads. Second, with proper algorithms, the active front end 24-Pulse Diode Converter
can actually be switched in a pattern that presents a IGCT Active Converter
A B
leading power factor to the power system. This is useful in
Figure 29. Converter Options for MV IGCT
maintaining voltage at the end of a long ac utility feeder.
3-level Voltage Source Inverter
In the late 90s, GE produced the Innovation Series£ MV (A) Active IGCT Converter & (B) 24 pulse Diode Converter
IGCT PWM drives with active front-ends. Figure 30

Figure 30. Example GE Innovation Series£ MV IGCT Based 3300 Volt VSI PWM Drive
Including Active Converter & Inverter Modules

Revised: 01-06-05
Revised: 7-07 © ©2005 TMGE Automation
2007 TMEIC Systems,
GE Automation U.S.A.
Systems. All Rights Reserved. Page 23 of 27Page 23 of 28
All Rights Reserved
MV IGCT Drive Comparison Points
Here are some of the key comparison points, strengths and x Power device redundancy not practical.
limitations of the MV IGCT NPC drive system. x Possible resonance between motor and output sine filter,
Major Strengths if included.
System Ratings, Other
x Low power switch count
x High power levels with largest IGCT devices x Power output levels 1.0 to 16+ MW
x Fast response & wide range of speed and torque control x Input voltage levels - transformer isolated, limited by
transformer.
x No significant torque pulsations
x Transformer isolation - inherent
x Regeneration is possible with active front end
x Potential for low harmonics on power input (with active IGCT
Major Limitations or 18 + more pulse diode converter)
x 3-level inverter requires output sine filter above 3300 v x Output voltages - 2.3 to 6.9 KV
x Very high parts count within complex IGCT firing circuitry x Packaging and mechanical features – remote transformer
x May not be able to run in test mode with motor disconnected Cost of ownership
and output filter in place.
x System efficiency of > 96%, including transformer
x Life cycle – this technology is current, but being challenged by
IEGT technology

IEGT Voltage Source PWM Inverter

In our discussions of power devices, we mentioned the
growth in the transistor devices into new forms such as the
IEGT. How would these devices be applied to greatest
advantage? Figure 31 shows a power one-line of one
implementation, with an active IEGT converter.
The high switching speed and low losses of the IEGT lend
them selves to some very high power output levels at
motor voltages up to 3300 Volts.

Transformer
& Feed Reactor
20% Z

Sync Field
[If Applic]

INDUCTION
OR SYNC
MOTOR

Figure 31. IEGT 3300 volt Voltage Source Inverter and IEGT Active Regenerative Source

Revised: 01-06-05 © 2005 TMGE Automation Systems, U.S.A. Page 24 of 27

All Rights Reserved
Revised: 7-07 © 2007 TMEIC GE Automation Systems. All Rights Reserved. Page 24 of 28
 Figure 32. Example GE Toshiba T650 IEGT 3300 volt 8 MW Regenerative Inverter

Figure 32 shows a complete regenerative eight MW

inverter including all the devices shown in Figure 31.
Figure 33 shows a photo of one complete liquid-cooled
phase leg of the IEGT inverter.

IEGT VSI PWM Comparison Points

The comparison points of the IEGT drive system
configuration of Figures 31, 32 and 33 are nearly identical
to the MV IGBT VSI inverter previously described.
Major Strengths
x Low power device count – only 24 for complete 8 MW Figure 33. Example IEGT Water Cooled Phase Leg
inverter-converter systems. One of six in an 8 MW Regenerative Inverter System
x Very high system MTBF
x DC link energy is stored in liquid filled power capacitors with
20+ year life Major Limitations
x Low power system harmonics x Power device redundancy not practical
x Unity or leading power factor x IEGT switching speed can produce motor waveform transient
x 3-level output and less than 5% motor current THD voltages and some installations may require dv/dt filter on
x Simple voltage-controlled gate circuit almost 4:1 more reliable drive output
than IGCT gate control.
x Rugged and proven reliable
x Fast response
x Wide range of speed and torque control
x High starting torque
x Synchronous or induction motor compatible
x Can run in test mode with motor disconnected

Revised: 01-06-05
Revised: 7-07 © 2005 TMGE Automation
© 2007 TMEIC Systems,
GE Automation U.S.A.
Systems. All Rights Reserved. Page 25 of 27Page 25 of 28
All Rights Reserved
System Ratings, Other
x Very high power levels – up to 8 MW per single Table 7. Comparison of 1970’s Vintage MV AC Drive Controls
bridge, 32 MW with parallel bridges with Current State of the Art
x Input voltage levels – transformer isolated.
x Transformer isolation - inherent Comparison AC Drive Control Vintage
x Output voltage: 3.3 KV Area
x Packaging & Mechanical Features - liquid cooling, Then Now
with closed loop redundant system.
Multiple printed circuit
Hardware Single Board processors in
Cost of ownership assemblies, custom wire-
VME form factor or flat mount
Packaging wrapped backplanes
x System efficiency of > 96.5%, including
transformers 32 bit main processors with
x Life cycle – this technology solid and growing. Micro Processor 16-bit processors additional special purpose
auxiliary processors
x Very small footprint using water-cooling.
Software based control with
Hardware dependent control
Signal Processing Over The Years Control Basis
with limited sequencer
flexible sequencing logic and
Windows based control system
Early MV inverter systems were based on a fair capability, fixed block diagram
toolbox, animated graphic
regulators.
amount of electronic “real estate”. Rows of displays, trending.
printed circuit boards were typical of every drive.
Complete Knowledge
Additionally, as knowledge of ac drives Local control push buttons, Management, including
advanced, the algorithms and methods for Control and Data
printers, meters, single serial multiple data ports, Ethernet
creating ac output waveforms also grew over the Interface interface. drive set up, multiple software
years. Table 7 presents a summary chart of some drivers, HMI screens.
of the key hardware, software and support
changes from “then” to “now”. Most applications can use
Most drives required speed tachless algorithms to
Speed Feedback
feedback sensors. determine speed with good
precision.

A brief process using true

automatic drive tuning, with
A lengthy and manual process
motor parameters and load
Drive Set up with multiple meters, strip chart
characteristics automatically
recorders, etc.
determined by microprocessor
controlled measurements

Extensive online help files,

Some diagnostic Aids,
data capture buffers, built-in
including printed
Diagnostic trend recorders, failed power
troubleshooting guides,
Process & Tools switch identification, animated
diagnostic indicator lights,
block diagrams or signal flow
printed fault logs.
tracing.

Telephone and local field

24 x 7 remote diagnostic and
engineer site support, with
monitoring service, with
Support average time to solve
average time to restore service
problems 8 - 24 hours
< 90 minutes.
including travel time.

Revised: 7-07
Revised: 01-06-05 © 2007
© 2005 TMGE TMEIC GE
Automation Automation
Systems, Systems. All Rights Reserved.
U.S.A. Page 26 of 27 Page 26 of 28
All Rights Reserved
 Examples. Some illustrative photos may tell the story
best. Figure 35 shows an early LCI drive control rack of
printed cards. Figure 36 is the same control for a modern
Examples. Some illustrative photos may tell the story
LCI drive, including advanced diagnostics. Finally, Figure
best. Figure 35 shows an early LCI drive control rack of
37 printed
shows the single
cards. 10-inch
Figure 36 isbythe10-inch 32-bit for a modern
same control
microprocessor card for a modern PWM MV drive. The
LCI drive, including advanced diagnostics. Finally, Figure
number of printed circuit cards and overall visual
37 shows the single 10-inch by 10-inch 32-bit
reduction in complexity
microprocessor is quite
card for a contrast.
a modern PWM MV Thisdrive.
is The
particularly obvious when one considers that the new
number of printed circuit cards and overall visual
control has a much higher level of diagnostic and
reduction in complexity is quite a contrast. This is
communication capability
particularly obvious whenwithin
one the simplified
considers that package.
the new
There has certainly been an interesting interplay
control has a much higher level of diagnostic and between
thecommunication
appearance of power devices, the growth of signal
capability within the simplified package. and
data processing power and the creation of the many
There has certainly been an interesting interplay between
inverter topologies. An all-digital implementation has
the appearance of power devices, the growth of signal and
made
datapossible the high
processing powerreliability both needed
and the creation and
of the many
expected of modern MV drives.
inverter topologies. An all-digital implementation has
made possible the high reliability both needed and
Conclusion
expected of modern MV drives.
Over the course of this paper we have covered a fairly
broad range of MV drive topics. We have attempted to
Conclusion
show where MV drive technology has been, what drove it
Over the course of this paper we have covered a fairly
forward, and some present and future trends. Hopefully we
broad range of MV drive topics. We have attempted to Figure 35. 1970’s Vintage LCI
have
showaccomplished
where MV at leasttechnology
drive some of those goals.what drove it
has been, MV Drive Control
One thing seems certain: there have been
forward, and some present and future trends. many Hopefully we
Figure 35. 1970’s Vintage LCI
enhancements
have accomplished at least some of thosemuch
in MV technology. And yet goals.has
MV Drive Control
remained
One thing seems certain: there have been manyhigh
the same. Users will continue to expect
reliability and maintainability of their MV drives. Energy
enhancements in MV technology. And yet much has
conservation and the economic benefits of process
remained the same. Users will continue to expect high
optimization will maintainability
reliability and move MV drives of into
theirexpanded
MV drives.markets
Energy
and application areas.
conservation and the economic benefits of process
optimization
Newer and morewill move power
efficient MV drivesdevicesintowill
expanded
continuemarkets
to
and application
appear, and will beareas.
even easier to control. Engineers will
continue to create novel and reliable systems from the
Newer and more efficient power devices will continue to
emerging
appear,technology. The winner
and will be even easier to will be theEngineers
control. ever- will
widening group of MV drives systems users.
continue to create novel and reliable systems from the
emerging technology. The winner will be the ever-
widening group of MV drives systems users.

Figure 36. Modern LCI

MV Drive Control
Figure 36. Modern LCI
MV Drive Control
Innovation Series is a registered trademark of the General Electric Company
Ethernet is a registered trademark of Xerox Corporation
Dura-Bilt5i MV is a registered trademark of GE Toshiba Automation Systems
Innovation Series is a registered trademark of the General Electric Company
Figure 37. Modern MV PWM Ethernet is a registered trademark of Xerox Corporation
Single-board Control Processor Dura-Bilt5i MV is a registered trademark of GE Toshiba Automation Systems

Figure 37. Modern MV PWM

Single-board Control Processor
Revised: 7-07 01-06-05
Revised: © TMGE
© 2005 2007 TMEIC GE Automation
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U.S.A. Page 27 of 27Page 27 of 28
All Rights Reserved
TMEIC GE: Global Vision, Global Reach
TMEIC GE is the result of a joint venture between Toshiba, Mitsubishi Electric Industrial Systems Corporation and
General Electric. The company delivers the energies and expertise of over 2,200 employees and the strength of a
$2.0 billion company offering technology, sales, service and products through 60 offices on five continents. TMEIC
GE continues our legacy of innovation by designing new products that work with existing GE, Toshiba or Mitsubishi
Electric components in the metals, paper, materials and material handling markets as well as customer engineered
drives for industrial applications. The combined forces leverage the global strength and acumen necessary for your
success in an increasingly connected world.

If You Need Service, We Are Right Next Door

TMEIC GE uses the extensive infrastructure of GE service

organizations to support its drive ­products over the long
term. By using this ­network of fully trained personnel,
you can be assured that your investment and trust in
TMEIC GE products will be preserved for many years to
come. TMEIC GE also provides a full scope of services,
ranging from process optimization to asset optimization,
that focus on improving ­productivity and quality of
production processes. Asset optimization focuses on the
maintenance and management of physical and software
assets employed by your business enterprise.

Hundreds of ­service ­engineers and ­technicians

deliver ­improved productivity and cash flow
to customers.

TM GE Automation Systems, LLC (USA) Dura-Bilt5i MV is a registered trademark of General Electric Company, U.S.A.
Office: 1501 Roanoke Blvd. Innovation Series is a registered trademark of the General Electric Company
All other products mentioned are registered trademarks and/or trademarks of their respective companies.
Mailing: 2060 Cook Drive
Salem, VA, United States All specifications in this document are subject to change without notice. The above brochure is provided
24153 free of charge and without obligation to the reader or to TM GE. TM GE Automation Systems, LLC does
not accept, nor imply, the acceptance of any liability with regard to the use of the information provided.
TEL: +1-540-387-5741 TM GE provides the information included herein as is and without warranty of any kind, express or
Fax: +1-540-387-7060 implied, including but not limited to any implied statutory warranty of merchantability or fitness for
Web: http://www.tmeicge.com particular purposes.

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