NTTFS4C10N

MOSFET – Power, Single,

N-Channel, m8FL
30 V, 44 A
Features
• Low RDS(on) to Minimize Conduction Losses www.onsemi.com
• Low Capacitance to Minimize Driver Losses
V(BR)DSS RDS(on) MAX ID MAX
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V
30 V 44 A
Compliant 11 mW @ 4.5 V

Applications
• DC−DC Converters N−Channel MOSFET
• Power Load Switch D (5−8)
• Notebook Battery Management

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit G (4)

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage VGS ±20 V S (1,2,3)

Continuous Drain TA = 25°C ID 13.3 A

Current RqJA (Note 1) MARKING DIAGRAM
TA = 80°C 9.9
1
Power Dissipation RqJA TA = 25°C PD 2.09 W 1 S D
(Note 1)
WDFN8 S 4C10 D
Continuous Drain TA = 25°C ID 18.2 A (m8FL) S AYWWG D
Current RqJA ≤ 10 s CASE 511AB G G D
(Note 1) TA = 80°C 13.6

Power Dissipation TA = 25°C PD 3.9 W

4C10 = Specific Device Code
RqJA ≤ 10 s (Note 1) Steady
State A = Assembly Location
Continuous Drain TA = 25°C ID 8.2 A Y = Year
Current RqJA (Note 2) WW = Work Week
TA = 80°C 6.1
G = Pb−Free Package
Power Dissipation TA = 25°C PD 0.79 W
RqJA (Note 2) (Note: Microdot may be in either location)
Continuous Drain TC = 25°C ID 44 A
Current RqJC (Note 1)
TC = 80°C 33 ORDERING INFORMATION
Power Dissipation TC = 25°C PD 23.6 W
RqJC (Note 1) Device Package Shipping†

Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 128 A NTTFS4C10NTAG WDFN8 1500 / Tape &
(Pb−Free) Reel
Operating Junction and Storage Temperature TJ, −55 to °C
Tstg +150 NTTFS4C10NTWG WDFN8 5000 / Tape &
Source Current (Body Diode) IS 20 A (Pb−Free) Reel

Drain to Source dV/dt dV/dt 6.0 V/ns †For information on tape and reel specifications,
including part orientation and tape sizes, please
Single Pulse Drain−to−Source Avalanche Energy EAS 31 mJ refer to our Tape and Reel Packaging Specification
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk, Brochure, BRD8011/D.
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

June, 2019 − Rev. 3 NTTFS4C10N/D
 NTTFS4C10N

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 A, EAS = 14 mJ.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.3
Junction−to−Ambient – Steady State (Note 4) RqJA 59.9
°C/W
Junction−to−Ambient – Steady State (Note 5) RqJA 157.8
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 31.8
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 7.1 A, 34
V
(transient) Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage V(BR)DSS/ 14.5

mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.5 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 5.9 7.4
mW
VGS = 4.5 V ID = 15 A 8.8 11
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 43 S
Gate Resistance RG TA = 25°C 1.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS 993
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 574 pF
Reverse Transfer Capacitance CRSS 163
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.164
Total Gate Charge QG(TOT) 9.7
Threshold Gate Charge QG(TH) 1.5
nC
Gate−to−Source Charge QGS VGS = 4.5 V, VDS = 15 V; ID = 30 A 2.8
Gate−to−Drain Charge QGD 4.8
Gate Plateau Voltage VGP 3.2 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 18.6 nC
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.

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 NTTFS4C10N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON) 9.0
Rise Time tr VGS = 4.5 V, VDS = 15 V, 30
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 14
Fall Time tf 7.0
Turn−On Delay Time td(ON) 6.0
Rise Time tr VGS = 10 V, VDS = 15 V, 25
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 18
Fall Time tf 4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.80 1.1
V
IS = 10 A TJ = 125°C 0.67
Reverse Recovery Time tRR 23.3
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 12.7 ns
Discharge Time tb IS = 30 A 10.6
Reverse Recovery Charge QRR 8.3 nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.

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 NTTFS4C10N

TYPICAL CHARACTERISTICS

65 80
4.0 V TJ = 25°C 3.8 V VDS = 5 V
60
4.2 V to 10 V 70
55 3.6 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

50 60
45 3.4 V
40 50
35 3.2 V 40
30
25 3.0 V 30
20 TJ = 125°C
15 20
2.8 V
TJ = 25°C
10 10
2.6 V
5 TJ = −55°C
0 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.020 0.020
TJ = 25°C
0.018 ID = 30 A 0.018
0.016 0.016
0.014 0.014
0.012 0.012
0.010 0.010 VGS = 4.5 V

0.008 0.008
VGS = 10 V
0.006 0.006
0.004 0.004
0.002 0.002
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7 10000
ID = 30 A VGS = 0 V
1.6
VGS = 10 V TJ = 150°C
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

1.5
IDSS, LEAKAGE (nA)

1.4
1000 TJ = 125°C
1.3
1.2
1.1
1.0 100
TJ = 85°C
0.9
0.8
0.7 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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TYPICAL CHARACTERISTICS

1200 10

VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 0 V QT
9
Ciss TJ = 25°C
1000
8
C, CAPACITANCE (pF)

7
800
Coss 6
600 5
Qgs
4 Qgd
400
3 TJ = 25°C
Crss 2 VDD = 15 V
200 VGS = 10 V
1
ID = 30 A
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

1000 20
VGS = 0 V
VDD = 15 V 18
ID = 15 A
IS, SOURCE CURRENT (A)
16
VGS = 10 V
td(on) 14
100 tr
t, TIME (ns)

12
td(off)
10

tf 8
10 6
4 TJ = 125°C
2 TJ = 25°C
1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 14
SOURCE AVALANCHE ENERGY (mJ)

ID = 17 A
EAS, SINGLE PULSE DRAIN−TO−

12
100
ID, DRAIN CURRENT (A)

10 ms 10
10 100 ms
8
1 ms
1 0 V < VGS < 10 V 10 ms 6
Single Pulse
TC = 25°C 4
0.1 RDS(on) Limit dc
Thermal Limit 2
Package Limit
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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TYPICAL CHARACTERISTICS

100

Duty Cycle = 50%

20%
10
10%
5%
R(t) (°C/W)

2%
1
1%

0.1

Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Response

60

100
50
ID, DRAIN CURRENT (A)

40
TA = 25°C
GFS (S)

30 TA = 85°C
10
20

10

0 1
0 10 20 30 40 50 60 70 80 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03
ID (A) PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics

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PACKAGE DIMENSIONS

WDFN8 3.3x3.3, 0.65P

CASE 511AB
ISSUE D

2X
NOTES:
0.20 C 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
B 2X
PROTRUSIONS OR GATE BURRS.
D1 MILLIMETERS INCHES
8 7 6 5 0.20 C
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
4X A1 0.00 −−− 0.05 0.000 −−− 0.002
E1 E q b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC 0.130 BSC
c D1 2.95 3.05 3.15 0.116 0.120 0.124
1 2 3 4
A1 D2 1.98 2.11 2.24 0.078 0.083 0.088
TOP VIEW E 3.30 BSC 0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
A C e 0.65 BSC 0.026 BSC
6X G 0.30 0.41 0.51 0.012 0.016 0.020
0.10 C e SEATING
K 0.65 0.80 0.95 0.026 0.032 0.037
PLANE
L 0.30 0.43 0.56 0.012 0.017 0.022
SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q 0_ −−− 12 _ 0_ −−− 12 _
8X b
0.10 C A B
SOLDERING FOOTPRINT*
0.05 C 8X
4X L e/2 0.42 0.65 4X
1 4 PITCH 0.66
PACKAGE
OUTLINE
K
E2
E3 M
8 5
L1 3.60
G D2
BOTTOM VIEW 0.57 2.30
0.75

0.47 2.37
3.46
DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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