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14200 Roll No.

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No. of Pages
14200 : 03 14200

Total No. of Questions : 09

B.Tech.(ECE) (Sem.–3)
14200 14200 14200 ELECTRONICS
14200 DEVICES 14200
14200 & CIRCUITS
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Subject Code : EC-201

Paper ID : [A0301]
14200 Time : 3 Hrs.
14200 14200 14200 14200 14200 Max. Marks
14200 14200 : 60 14200

INSTRUCTION TO CANDIDATES :
1. SECTION-A is COMPULSORY consisting of TEN questions carrying T WO marks

m
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each. 14200 14200 14200 14200 14200 14200 14200

2. SECTION-B contains FIVE questions carrying FIVE marks each and students
have to attempt any FOUR questions.

o
.r c
3. SECTION-C contains T HREE questions carrying T EN marks each and students
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attempt any 14200 14200
T WO questions. 14200 14200 14200 14200

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pe
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SECTION-A
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o m
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a .r c
1. Write briefly :

14200 14200 a) Why

14200

r p
the temperature
14200coefficient14200
of resistance of a semiconductor
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e
14200 is negative?
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b
of an ideal diode?
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a p
b) What is the main difference between the characteristics of a simple switch and those
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rp
c) Why is Schottky diode called hot carrier diode?

14200 14200 d) What

14200is Early effect?
configuration.
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e) Explain programmable UJT.

Explain
b
how it affects
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characteristics in CB
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f) Can the channel of a JFET completely closes at the drain end? Explain the reason.

14200 14200 g) Sketch

14200 small signal model of an 14200
14200 FET at low frequencies.
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h) Justify the need of heat sinks in power amplifiers.

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i) When a perfect square pulse is 14200
applied to the 14200
transistor base,14200
the transistor14200
does not 14200

switch on immediately. Why?

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14200 1 | M-57504
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j) Determine the base resistance RB in the circuit shown if R = 2k and V = 5V.
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SECTION-B

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2)
o
Derive an expression which shows how the characteristics of p-n diode are affected by

.r c
temperature parameter. Also show diagrammatically the variation in diode characteristics
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with variation in temperature.

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3)
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load resistance
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of R =

pe
20. The secondary
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resistance
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has a forward resistance of 0.5. Determine the following :
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A full wave rectifier with a centre tapped transformer supplies a dc current of 100mA to a

o
of transformer
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is 1 . Each
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diode 14200

a .r c
i) rms value of the signal voltage across each half of the secondary.

p
r e
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ii) dc power supplied to the load.

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b
iii) PIV rating for each diode.
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iv) ac power input to 14200
the rectifier. 14200

a p
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14200 4)
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v) conversion efficiency.
Can a transistor
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b
by simply rp
14200 connecting two separate14200
14200 diodes back to
a transistor explain, why emitter region is heavily doped, base width is small and
back. In
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collector area is large?

14200 5)
14200 Draw the
14200circuit of 14200
a common source
14200 FET amplifier.
14200 With the
14200help of small
14200 signal 14200

equivalent circuit, analyze the amplifier for voltage gain and input admittance.

6) (a) Find ICQ and VCEQ for the circuit shown. dc = hFE = 130.
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(b) What will happen to VCE if R2 is open circuited in the circuit of part (a).

(c) Find Av and Rin for the circuit of part (a) if hfe = 50, hie = 1K , hre = 0 and hoe = 0.
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14200 2 | M-57504
14200 14200 14200 14200 14200 14200 (S2)-806
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o
SECTION-C

.r c
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7) What is the difference between the construction of enhancement type MOSFET and a
depletion type MOSFET? Explain the operation and characteristics of N-channel

14200 14200 depletion type MOSFET

14200

pe
14200with IDSS =14200
10mA and VP14200
= –4V 14200 m
MOSFET in depletion mode. Also sketch the transfer characteristics of N-channel

o 14200 14200

a .r c
8) Explain the construction, equivalent circuit, operation and characteristics and salient
features of UJT.
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9)
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r p 14200 14200

e
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Define stability factor w.r.t transistor biasing. State the factors affecting the stability.
14200

14200 14200 i) fixed b

Draw the biasing circuits in cases of :
bias
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a p
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rp
ii) fixed bias with resistor Rr in series with emitter and reference ground

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iii) potential
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divider bias.
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b
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Derive expression for stability factor S in terms of the device parameters and circuit
components for the above circuits.
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14200 3 | M-57504
14200 14200 14200 14200 14200 14200 (S2)-806
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