Beruflich Dokumente
Kultur Dokumente
Thermal Resistance
Junction - ambient3) Rth JA K/W
BAS 70 ≤ 405
BAS 70-04 … ≤ 575
Junction - soldering point Rth JS
BAS 70 ≤ 335
BAS 70-04 … ≤ 435
Semiconductor Group 2
BAS 70 …
DC characteristics
Breakdown voltage V(BR) 70 – – V
IR = 10 µA
Reverse current IR µA
VR = 50 V – – 0.1
VR = 70 V – – 10
Forward voltage VF mV
IF = 1 mA – 375 410
IF = 10 mA – 705 750
IF = 15 mA – 880 1000
Diode capacitance CT – 1.6 2 pF
VR = 0, f = 1 MHz
Charge carrier life time τ – – 100 ps
IF = 25 mA
Differential forward resistance rf – 30 – Ω
IF = 10 mA, f = 10 kHz
Semiconductor Group 3
BAS 70 …
Semiconductor Group 4
BAS 70 …
Semiconductor Group 5