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SQ4920EY

Vishay Siliconix

Automotive
Dual N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 30 Definition
RDS(on) () at VGS = 10 V 0.016 • TrenchFET® Power MOSFET
RDS(on) () at VGS = 4.5 V 0.022 • Compliant to RoHS Directive 2002/95/EC
ID (A) per leg 8 • AEC-Q101 Qualifiedd
Configuration Dual • Find out more about Vishay’s Automotive
Grade Product Requirements at:
SO-8 D1 D2 www.vishay.com/applications

S1 1 8 D1

G1 2 7 D1

S2 3 6 D2 G1 G2

G2 4 5 D2

Top View S1 S2

N-Channel MOSFET N-Channel MOSFET

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4920EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 8
Continuous Drain Currenta ID
TC = 125 °C 7.2
A
Continuous Source Current (Diode Conduction)a IS 4
Pulsed Drain Currentb IDM 32
Single Pulse Avalanche Energy EAS 31 mJ
L = 0.1 mH
Single Pulse Avalanche Current IAS 25 A
TC = 25 °C 4.4
Maximum Power Dissipationb PD W
TC = 125 °C 1.4
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

THERMAL RESISTANCE RATINGS


PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 110
°C/W
Junction-to-Foot (Drain) RthJF 34
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.

Document Number: 66724 www.vishay.com


S10-1699-Rev. A, 02-Aug-10 1
SQ4920EY
Vishay Siliconix

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = 30 V - - 1.0
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 μA
VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150
On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 30 - - A
VGS = 4.5 V ID = 5 A - 0.016 0.022
VGS = 10 V ID = 6 A - 0.012 0.016
Drain-Source On-State Resistancea RDS(on) 
VGS = 10 V ID = 6 A, TJ = 125 °C - - 0.024
VGS = 10 V ID = 6 A, TJ = 175 °C - - 0.028
Forward Transconductancef gfs VDS = 15 V, ID = 6 A - 43 - S
Dynamicb
Input Capacitance Ciss - 1175 1465
Output Capacitance Coss VGS = 0 V VDS = 15 V, f = 1 MHz - 225 280 pF
Reverse Transfer Capacitance Crss - 85 105
Total Gate Chargec Qg - 19.7 30
Gate-Source Chargec Qgs VGS = 10 V VDS = 15 V, ID = 6.1 A - 3.8 - nC
Gate-Drain Chargec Qgd - 2.9 -
Turn-On Delay Timec td(on) - 7 10
Rise Timec tr VDD = 15 V, RL = 15  - 10 15
ns
Turn-Off Delay Timec td(off) ID  1 A, VGEN = 10 V, Rg = 1  - 25 37
Fall Timec tf - 8 12
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM - - 32 A
Forward Voltage VSD IF = 1.8 A, VGS = 0 V - 0.75 1.1 V
Notes
e. Pulse test; pulse width  300 μs, duty cycle  2 %.
f. Guaranteed by design, not subject to production testing.
g. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 66724


2 S10-1699-Rev. A, 02-Aug-10
SQ4920EY
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)


40 40

V GS = 10 V thru 4 V
32 32

ID - Drain Current (A)


ID - Drain Current (A)

24 24

16 16
T C = 25 °C
V GS = 3 V
8 8
T C = 125 °C
T C = - 55 °C
0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)


Output Characteristics Transfer Characteristics

100 0.05

80 0.04
g fs - Transconductance (S)

RDS(on) - On-Resistance (Ω)

T C = - 55 °C
60 0.03

T C = 25 °C
40 0.02
V GS = 4.5 V
T C = 125 °C
20 0.01 V GS = 10 V

0 0
0 3 6 9 12 15 0 8 16 24 32 40

ID - Drain Current (A) ID - Drain Current (A)


Transconductance On-Resistance vs. Drain Current

1500 10
ID = 6.1 A
Ciss
VGS - Gate-to-Source Voltage (V)

1200 8
C - Capacitance (pF)

900 6

V DS = 15 V

600 4

300 Coss 2

Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

Document Number: 66724 www.vishay.com


S10-1699-Rev. A, 02-Aug-10 3
SQ4920EY
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)


2.0 100

ID = 6 A
V GS = 10 V
1.7 10
RDS(on) - On-Resistance

IS - Source Current (A)


T J = 150 °C
(Normalized)

1.4 1
V GS = 4.5 V

T J = 25 °C
1.1 0.1

0.8 0.01

0.5 0.001
- 50 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2

TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature

0.15 0.6

ID = 4.2 A
0.3
0.12
RDS(on) - On-Resistance (Ω)

VGS(th) Variance (V)

0
0.09

- 0.3
ID = 5 mA
0.06
- 0.6
T J = 150 °C
ID = 250 μA
0.03
- 0.9

T J = 25 °C
0 - 1.2
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175

VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)


Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

40
ID = 1 mA
VDS - Drain-to-Source Voltage (V)

38

36

34

32

30
- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)


Threshold Voltage

www.vishay.com Document Number: 66724


4 S10-1699-Rev. A, 02-Aug-10
SQ4920EY
Vishay Siliconix

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

100
IDM Limited

Limited by R DS(on)* 100 μs

ID - Drain Current (A)


10

ID Limited 1 ms

1 10 ms

100 ms
1s
10 s, DC
0.1
TC = 25 °C
Single Pulse BVDSS Limited

0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

1
Normalized Effective Transient

Duty Cycle = 0.5


Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 66724 www.vishay.com


S10-1699-Rev. A, 02-Aug-10 5
SQ4920EY
Vishay Siliconix

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)


2

1
Normalized Effective Transient

Duty Cycle = 0.5


Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66724.

www.vishay.com Document Number: 66724


6 S10-1699-Rev. A, 02-Aug-10
Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com


Revision: 18-Jul-08 1