VUO190-18NO7

3~
Standard Rectifier Module Rectifier
VRRM = 1800 V
I DAV = 240 A
I FSM = 2800 A

3~ Rectifier Bridge

Part number

VUO190-18NO7

B- C~ D~ E~ A+

Features / Advantages: Applications: Package: PWS-E

● Package with DCB ceramic ● Diode for main rectification ● Industry standard outline
● Improved temperature and power cycling ● For three phase bridge configurations ● RoHS compliant
● Planar passivated chips ● Supplies for DC power equipment ● Easy to mount with two screws
● Very low forward voltage drop ● Input rectifiers for PWM inverter ● Base plate: Copper
● Very low leakage current ● Battery DC power supplies internally DCB isolated
● Field supply for DC motors ● Advanced power cycling

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130328a

© 2013 IXYS all rights reserved

 VUO190-18NO7

Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 1900 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 V
IR reverse current VR = 1800 V TVJ = 25°C 200 µA
VR = 1800 V TVJ = 150°C 3.5 mA
VF forward voltage drop IF = 80 A TVJ = 25°C 1.07 V
I F = 240 A 1.36 V
IF = 80 A TVJ = 125 °C 0.96 V
I F = 240 A 1.33 V
I DAV bridge output current TC = 110°C T VJ = 150 °C 240 A
rectangular d=⅓
VF0 threshold voltage TVJ = 150 °C 0.74 V
for power loss calculation only
rF slope resistance 2.4 mΩ
R thJC thermal resistance junction to case 0.4 K/W
R thCH thermal resistance case to heatsink 0.15 K/W
Ptot total power dissipation TC = 25°C 310 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 2.80 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA
t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.38 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 39.2 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 38.1 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 28.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 27.5 kA²s
CJ junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C 133 pF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130328a

© 2013 IXYS all rights reserved

 VUO190-18NO7

Package PWS-E Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 250 A
Tstg storage temperature -40 125 °C
T VJ virtual junction temperature -40 150 °C
Weight 284 g
MD mounting torque 4.25 5.75 Nm
MT terminal torque 4.25 5.75 Nm
d Spp/App terminal to terminal 12.0 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 26.0 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V

Circuit
Made in Germany
Diagram
Product
XXXX-XXXX YYCW Lot#
Number

Date Code

Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard VUO190-18NO7 VUO190-18NO7 Box 5 462527

Equivalent Circuits for Simulation * on die level T VJ = 150 °C

V0 Rectifier
I R0

V 0 max threshold voltage 0.74 V

R 0 max slope resistance * 1.2 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130328a

© 2013 IXYS all rights reserved

 VUO190-18NO7

Outlines PWS-E
M6x12

7
30
3
94
80
72
26 26
15

C ~ D ~ E ~
6.5
6.5
54
27

A + B -
3 4
2 5
1 6

7
12
25
66
M6

B- C~ D~ E~ A+

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130328a

© 2013 IXYS all rights reserved

 VUO190-18NO7

Rectifier
240 2500 105
50 Hz
50Hz, 80% VRRM 0.8 x V RRM

200

TVJ= 45°C
160 2000
IFSM TVJ= 150°C
IF 120 104
TVJ = 45°C
2
[A] [A s]
80 1500
[A]
TVJ = 150°C
TVJ = 150°C
40
TVJ = 125°C
TVJ = 25°C
0 1000 103
0.5 1.0 1.5 0.001 0.01 0.1 1 1 2 3 4 5 6 7 89
VF [V] t [s] t [ms]
2
Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I t vs. time per diode
voltage drop per diode vs. time per diode

100 280
RthA:
0.2 K/W 240
80 DC = 0.4 K/W DC =
1 0.6 K/W 1
0.5 0.8 K/W 200 0.5
0.4 1.0 K/W IdAV 0.4
60 0.33 2.0 K/W 160 0.33
0.17 0.17
Ptot 0.08 [A] 0.08
120
40
[W]
80
20
40

0 0
0 20 40 60 80 100 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150
IdAVM [A] Tamb [°C] TC [°C]

Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs.
and ambient temperature per diode case temperature per diode

0.1
ZthJC
[K/W] Ri ti
0.050 0.02
0.01
0.003 0.01
0.100 0.225
0.177 0.8
0.001 0.070 0.58
1 10 100 1000 10000
t [ms]

Fig. 6 Transient thermal impedance junction to case vs. time per diode

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130328a

© 2013 IXYS all rights reserved