Names with entry no.

:
Group No. :
Date:
DEPARTMENT OF ELECTRICAL ENGINEERING
EE815-M.Tech POWER ELECTRONICS DESIGN LABORATORY - 2019-20

EXPERIMENT-I
MOSFET DEVICE CHARACTERISTICS

OBJECTIVE:

(a) To simulate VI characteristics of MOSFET using MATLAB Software.

(b) Experimental verification.

THEORY:

Power Semiconductor devices constitute the heart of modern power electronic

apparatus. They are used in power electronic converters in the form of a matrix of on-off
switches, and help to convert power from ac-dc, dc-ac, de-de and ac-dc.

MOSFET
A power MOSFET has three terminals called drain, source and gate. The power
MOSFET is a voltage controlled device as its operation depends on flow of majority carriers
only, MOSFET is a unipolar device. The control signal or gate signal required in MOSFET is
less than that required for BJT .This is because of the fact that the gate circuit impedance in
MOSFET is very high of the order of lQA9ohm.This large impedance permits the MOSFET
gate to be driven directly from microelectronic circuits.

y9' y ' {
L l JL
n-channel deplet ion type
MO FET
p-channel depletion type
MOSFET
n-channel enhancement
type MOSFET
p-channel enhancement
type M OSFE T

Fig. 1.1. Pin diagram and VI Characteristics of MOSFET

 The output characteristics indicate the variation of the drain current Id as a function of
drain-source voltage Vos with VGs as a parameter. For low values of Vos the graph between
Io-Vos is almost linear this indicates a constant value of on resistance. For given VGS if Vos is
increased output characteristic is relatively flat indicating that the drain current is almost
constant.

CIRCUIT DIAGRAM:

15V
input B Dr:iver: Board
6N13 6-opto based +-C -

5V, lkHz D
sq. wave input 3

TO CRO

220V/15 A
lr:::il
Current
1 PHASE VARIAC
Sensor G 0 -2A
f-- D--t DEVICE S
L1
BOARD

2 2 0V RECTIFIER 220v ,5 A
AC BOARD V 0 -2 50V RESISTI\i'E
LOAD

Fig. 1.2. Experimental circuit diagram to determine MOSFET output and load characteristics
APPARATUS REQUIRED:

SI.No Apparatus Rating Quantity

PROCEDURE

MOSFET:

1. The 15V ac input power is given to the driver board. 1 kHz, SV square wave from
function generator is given as input 2.
2. Check the output waveform at output; it should be 1 kHz 14V p-p.
3. Connect the rectifier board to the variac and check if variable de voltage is available
(0- lOOV).
4. Now turn off the connections. Connect the MOSFET board, ammeter and the load
resistance. MOSFET Connections should be done according to the terminals marked
as shown in the figure. Current sensor is used to observe the load current waveform,
and differential probe is used for measure the VGs.
5. For a particular load, the waveforms of load current and VGS are obtained onCRO.
6. To obtain the load characteristics, set a particular load and vary the input voltage and
note the variation in load current and Vos (Drain to Source voltage)
MATLAB SIMULATION RESULTS:

(Simulation results has to be attached.)

EXPERIMENTAL RESULTS:

OBSERVATIONS & GRAPHS:

MOSFET Output Characteristics
VGs = v
V1N(V) los(A) Vos(V)

VGs = v
V1N(V) los(A) Vos(V)

VGs = v
V1N(V) los(A) Vos(V)

Graph
Plot the graph of Vos vs Ios
MOSFET Load Characteristics

Vos = v
V1N(V) los(A) VGs(V)

Vos = v
V1N(V) los(A) VGs(V)

Vos = v
V1N(V) los(A) VGs(V)

Graph
Plot the graph of VGs vs Ios

CONCLUSION:
(Conclusion has to be written)

References:
[1] B.J .Baliga,Power Semiconductor Devices,Boston,M A: PW S Publishing.1996
[2] S .K.Ghandi,Semiconductor Power Devices,N ew York:John Wiley & Sons,1977.
[3] M .H .Rashid ,Power Electronics: Circuits,Devices and Applications, 3rd edition, Pearson
education, 2007.
[4] Ned Mohan, T. M. Underland, and W. M. Robbins, Power Electronics: Converters, Applications,
and Design, 2nd Ed., John Wiley, New York,1995.