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P0603BDL

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

25V 6.8mΩ @VGS = 10V 68A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 25
V
Gate-Source Voltage VGS ±20
TC = 25 °C 68
Continuous Drain Current1 ID
TC = 100 °C 43
2
A
Pulsed Drain Current IDM 160
Avalanche Current IAS 52
Avalanche Energy L = 0.3mH EAS 135 mJ
TC = 25 °C 50
Power Dissipation PD W
TC = 100 °C 20
Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS


THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2.5
°C / W
Junction-to-Ambient RqJA 62.5
1
Pulse width limited by maximum junction temperature.
2
Limited by package.

Ver 1.1 1 2013-3-14


P0603BDL
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.7 3.0
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 20V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 125 °C 10
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 160 A
Drain-Source On-State VGS = 4.5V, ID = 35A 7 15
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 35A 4.2 6.8
Forward Transconductance1 gfs VDS = 5V, ID = 20A 80 S
DYNAMIC
Input Capacitance Ciss 2020
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 719 pF
Reverse Transfer Capacitance Crss 483
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω
Qg(VGS = 10V) 48.8
Total Gate Charge2
Qg(VGS = 22.4
2
VDS = 15V, VGS = 10V, ID = 35A nC
Gate-Source Charge 4.5V) Qgs 11.3
Gate-Drain Charge2 Qgd 15.7
2 td(on)
Turn-On Delay Time 10
2 tr
Rise Time VDS = 15V, 24
nS
Turn-Off Delay Time 2 td(off) ID @ 35A, VGS = 10V, RGEN = 6Ω 35
Fall Time2 tf 16.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 38 A
1 VSD IF = 35A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 37 nS
IF = 35A, dlF/dt = 100A / μS
Reverse Recovery Charge Qrr 27.3 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2%.
2
Independent of operating temperature.

Ver 1.1 2 2013-3-14


P0603BDL
N-Channel Enhancement Mode MOSFET

Ver 1.1 3 2013-3-14


P0603BDL
N-Channel Enhancement Mode MOSFET

Ver 1.1 4 2013-3-14


P0603BDL
N-Channel Enhancement Mode MOSFET

Ver 1.1 5 2013-3-14