APT8024JLL

800V 29A 0.240Ω

POWER MOS 7 MOSFET

R

S S
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel 227
enhancement mode power MOSFETS. Both conduction and switching
G D
T-
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SO
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's ISOTOP ®
"UL Recognized"

patented metal gate structure.

D
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg • Popular SOT-227 Package
S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT8024JLL UNIT
VDSS Drain-Source Voltage 800 Volts
ID Continuous Drain Current @ TC = 25°C 29
Amps
IDM 1
Pulsed Drain Current 116
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 460 Watts
PD
Linear Derating Factor 3.68 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current 1
(Repetitive and Non-Repetitive) 29 Amps
EAR 1
Repetitive Avalanche Energy 50
mJ
EAS 4
Single Pulse Avalanche Energy 2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 Volts

RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 14.5A) 0.240 Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100
IDSS µA
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500
9-2004

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 5 Volts

050-7075 Rev B

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS APT8024JLL
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
C iss Input Capacitance 4670
VGS = 0V
Coss Output Capacitance VDS = 25V 860 pF
C rss Reverse Transfer Capacitance f = 1 MHz 155
Qg Total Gate Charge 3 VGS = 10V 160
Qgs VDD = 400V
Gate-Source Charge 24 nC
ID = 29A @ 25°C
Qgd Gate-Drain ("Miller ") Charge 105
RESISTIVE SWITCHING
td(on) Turn-on Delay Time 9
VGS = 15V
tr Rise Time VDD = 400V 5
ns
td(off) Turn-off Delay Time ID = 29A @ 25°C 23
RG = 0.6Ω
tf Fall Time 4
INDUCTIVE SWITCHING @ 25°C
Eon Turn-on Switching Energy 6 605
VDD = 533V, VGS = 15V
Eoff Turn-off Switching Energy ID = 29A, RG = 5Ω 490
INDUCTIVE SWITCHING @ 125°C µJ
Eon Turn-on Switching Energy 6 975
VDD = 533V VGS = 15V
Eoff Turn-off Switching Energy ID = 29A, RG = 5Ω 585
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 29
Amps
ISM Pulsed Source Current 1 (Body Diode) 116
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -29A) 1.3 Volts
t rr Reverse Recovery Time (IS = -29A, dl S/dt = 100A/µs) 850 ns
Q rr Reverse Recovery Charge (IS = -29A, dl S/dt = 100A/µs) 22 µC
dv/
dt Peak Diode Recovery dv/
dt
5 10 V/ns

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.27
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 5.95mH, RG = 25Ω, Peak IL = 29A
temperature 5 dv/dt numbers reflect the limitations of the test circuit rather than the
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.3
Z JC, THERMAL IMPEDANCE (°C/W)

0.25 0.9

0.20 0.7

0.15 0.5
Note:
9-2004

PDM

0.10 t1
0.3
t2
050-7075 Rev B

0.05
θ

0.1 Duty Factor D = t1/t2

0.05 SINGLE PULSE Peak TJ = PDM x ZθJC + TC
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves APT8024JLL
80
VGS =15 &10 V
RC MODEL 70 8V
Junction

ID, DRAIN CURRENT (AMPERES)

temp. (°C)
60
0.0409 0.0246F 7.5V
50

Power
40 7V
0.225 0.406F
(watts)
30
6.5V
20
0.00361 148F
10 6V
Case temperature. (°C) 5.5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
100 1.40

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

VDS> ID (ON) x RDS (ON)MAX. NORMALIZED TO
250µSEC. PULSE TEST V = 10V @ I = 14.5A
GS D
@ <0.5 % DUTY CYCLE
1.30
ID, DRAIN CURRENT (AMPERES)

80

1.20
60

1.10 VGS=10V

40
1.00
VGS=20V
TJ = +125°C
20 TJ = -55°C 0.90
TJ = +25°C

0 0.80
0 2 4 6 8 10 12 0 10 20 30 40 50 60
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
30 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN

25
ID, DRAIN CURRENT (AMPERES)

1.10
VOLTAGE (NORMALIZED)

20
1.05
15

1.00
10

5 0.95

0 0.90
25
50 75 100 125 150 -50-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5 1.2
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

I = 14.5A
D
V = 10V
GS
1.1
VGS(TH), THRESHOLD VOLTAGE

2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9
1.0
0.8
9-2004

0.5
0.7
050-7075 Rev B

0.0 0.6
-50 -25 0 25 50 75 100 125 150 -50 -25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT8024JLL
114 20,000
OPERATION HERE
LIMITED BY RDS (ON) 10,000
ID, DRAIN CURRENT (AMPERES)
50
100µS Ciss

C, CAPACITANCE (pF)
10
1,000
1mS Coss
5

TC =+25°C 10mS
TJ =+150°C
SINGLE PULSE Crss
1 100
1 10 100 800 0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = 29A
D

100

12
VDS= 160V TJ =+150°C
TJ =+25°C
VDS= 400V
8
VDS= 640V
10

0 1
050 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140 80
V = 533V
DD
td(off) R = 5Ω
120 70 G
T = 125°C
J
60 L = 100µH
100
td(on) and td(off) (ns)

V = 533V
DD
50
tr and tf (ns)

R = 5Ω
G
80
T = 125°C
J
tf
40
L = 100µH
60
30
tr
40
20

20 10
td(on)
0 0
0 10 30 40 20 50 0 10
30 40 2050
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000 4000
V = 533V V = 533V
DD DD
I = 29A
R
G
= 5Ω 3500 D
T = 125°C T = 125°C
J J Eoff
SWITCHING ENERGY (µJ)

1500 L = 100µH
SWITCHING ENERGY (µJ)

L = 100µH 3000
E ON includes
E ON includes
diode reverse recovery.
diode reverse recovery. 2500

1000 2000
Eon
Eon 1500
9-2004

500 1000
Eoff
500
050-7075 Rev B

0 0
5 10 15
25 30 35 40 45 50 20 0 5
10 15 20 25 30 35 40 45 50
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves APT8024JLL

Gate Voltage
10 % 90%
Gate Voltage T = 125 C
T = 125 C J
J td(off)
td(on)
Drain Current
90% Drain Voltage
90%
tr t
f

5%
5% 10%
Drain Current
10 %
Drain Voltage 0
Switching Energy
Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions

APT30DF60

V DD ID V DS

D.U.T.

Figure 20, Inductive Switching Test Circuit

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
9-2004

14.9 (.587) * Source Drain

15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193) internally. Current handling
050-7075 Rev B

38.0 (1.496) capability is equal for either

38.2 (1.504) Source terminal.

* Source Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.