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FQP20N60/FQPF20N60

600V,20A N-Channel MOSFET

General Description Product Summary

The FQP20N60 & FQPF20N60 have been fabricated VDS 700V@150℃


using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A
designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
100% UIS Tested
100% Rg Tested

Top View
D
TO-220 TO-220F

Absolute Maximum Ratings TA=25°C unless otherwise noted


Parameter Symbol FQP20N60
AOT20N60 FQPF20N60 Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 20 20*
ID
Current TC=100°C 12 12* A
Pulsed Drain Current C IDM 80
Avalanche Current C IAR 6.5 A
Repetitive avalanche energy C EAR 630 mJ
Single plused avalanche energy G EAS 1260 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 417 50 W
PD
Power Dissipation B Derate above 25oC 3.3 0.4 W/ oC
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics
Parameter Symbol FQP20N60 FQPF20N60 Units
Maximum Junction-to-Ambient A,D RθJA 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- °C/W
Maximum Junction-to-Case RθJC 0.3 2.5 °C/W
* Drain current limited by maximum junction temperature.

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FQP20N60/FQPF20N60

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 600
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 700 V
BVDSS
Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.8 V/ oC
/∆TJ
VDS=600V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=480V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3.2 3.8 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A 0.29 0.37 Ω
gFS Forward Transconductance VDS=40V, ID=10A 25 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.69 1 V
IS Maximum Body-Diode Continuous Current 20 A
ISM Maximum Body-Diode Pulsed Current 80 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2448 3061 3680 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 190 273 360 pF
Crss Reverse Transfer Capacitance 13 22.8 35 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 48 61 74 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=20A 14 18 22 nC
Qgd Gate Drain Charge 12 24 36 nC
tD(on) Turn-On DelayTime 57 ns
tr Turn-On Rise Time VGS=10V, VDS=300V, ID=20A, 125 ns
tD(off) Turn-Off DelayTime RG=25Ω 128 ns
tf Turn-Off Fall Time 88 ns
trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/µs,VDS=100V 384 480 580 ns
Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V 8 10.5 13 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.5A, VDD=150V, RG=25Ω, Starting TJ=25°C

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AOT20N60/AOTF20N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


40 100

10V VDS=40V -55°C

30 6.5V
10
ID (A)

ID(A)
20 125°C
6V

1
10 VGS=5.5V
25°C

0 0.1
0 5 10 15 20 25 30 0 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

0.6 3

Normalized On-Resistance
2.5 VGS=10V
0.5 ID=10A
VGS=10V
2
Ω)

0.4
RDS(ON) (Ω

1.5

0.3
1

0.2 0.5

0
0.1
-100 -50 0 50 100 150 200
0 10 20 30 40 50
Temperature (°C)
ID (A) Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

1.2 1.0E+02

1.0E+01
1.1
BVDSS (Normalized)

40
1.0E+00
IS (A)

125°C
1 1.0E-01

1.0E-02 25°C
0.9
1.0E-03

0.8 1.0E-04
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C) VSD (Volts)
Figure 5:Break Down vs. Junction Temparature Figure 6: Body-Diode Characteristics (Note E)

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FQP20N60/FQPF20N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000
Ciss
VDS=480V
12 ID=20A

Capacitance (pF)
1000
VGS (Volts)

9 Coss

6
100 Crss

0 10
0 20 40 60 80 100 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100
10µs 10µs
RDS(ON) RDS(ON)
limited 100µs limited
10 10 100µs
1ms
ID (Amps)

ID (Amps)

10ms 1ms
1 1
DC DC 10ms
0.1s
0.1 0.1 1s
TJ(Max)=150°C TJ(Max)=150°C
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Maximum Forward Biased Safe
Operating Area for AOT20N60 (Note F) Operating Area for AOTF20N60 (Note F)

25

20
Current rating ID(A)

15

10

0
0 25 50 75 100 125 150
TCASE (°C)
Figure 11: Current De-rating (Note B)

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FQP20N60/FQPF20N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

RθJC=0.3°C/W
Thermal Resistance

0.1
PD

0.01 Ton
T
Single Pulse

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT20N60 (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

RθJC=2.5°C/W
Thermal Resistance

0.1
PD

0.01 Ton
T
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF20N60 (Note F)

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FQP20N60/FQPF20N60

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt


DUT
Vgs

Vds - L Isd IF trr


Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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