An Introduc+on to Silvaco-Atlas

• Objectives:
– To learn how to simulate semiconductor device
structures in cross-section (2D) or in 3D.
– To become familiar with building a structure and
simulation code through Deckbuild in order to
perform DC and AC simulations.
– To visualize actual energy band-edge, potential, field,
and carrier profile gradients, etc, and output current-
voltage characteristics for devices discussed in
ECE135B.
– To solve Problem Set 4!
Refs.:
1. Atlas User Manual
2. nanohub online resources
http://nanohub.org/resources/1595/download/silvaco.pdf
 Is the interface we work with to set
Deckbuild up our structure and simulation

Athena Atlas
Simulates our input processing Simulates the Athena-created
conditions to produce the or input specified structure
structure whose performance (code or by Devedit) for output
we want to simulate characterisGcs based on
(to be taught in ECE136L). specified material parameters.
Tonyplot Displays output characteristics and
allows us to visualize them in a
variety of formats (contour plots, I-
V, C-V, etc).

In ECE135B, we will mainly modify Atlas command line input in order to characterize MOSFET
performance, and display extracted results in log files or plot them using Tonyplot.
 How to run Atlas
You can run the software from any of the linux labs or you can
SSH to any of the machines and run the program remotely.

Once you’re logged in, you can open a terminal and type in:
module load silvaco

Then, you’d want to start the deckbuild where you can type in
your code and run Atlas. Type:
Deckbuild &

Your working folder will be ee135bzz. Make sure that the

saved file name includes your family name so that others
wouldn’t modify it by mistake.
Deckbuild Window

Allows you to open input files with “.in”

extension (Ex: “superdevice.in”)
 Deckbuild Window

This window will open

Double-click

Allows you to open already built-in

examples, learn from them, and improve
your skills to u:lize the best of the
simulator.
 Deckbuild Window
You will see a list of available examples This window will open

Double-click Double-click to load

example in deckbuild
window
 Deckbuild Window
Created by Athena

Simulated
through Atlas
 Input File in Deckbuild (for illustration purpose only)
# Schrodinger-Poisson solution at zero bias Optional user comments; anything after ‘#’ is read as a comment
#
go atlas To run Atlas
#
mesh
#
x.mesh loc=0.0 spac=0.04
x.mesh loc=5.0 spac=0.04

y.mesh loc=0.0 spac=0.01 Mesh specification

y.mesh loc=0.07 spac=0.005
1. Structure
y.mesh loc=0.28 spac=0.005
y.mesh loc=0.35 spac=0.01 Specification:
# - Mesh
region num=1 material=Si3N4 y.min=0.0 y.max=0.14 - Region
region num=2 material=InAs y.min=0.14 y.max=0.21 Regional specifica>on - Electrode
region num=3 material=Si3N4 y.min=0.21 y.max=0.35 - Doping
#
elec num=1 material=Titanium name=source x.min=0.0 x.max=0.5 y.min=0.139 y.max=0.14
elec num=2 material=Aluminum name=gate x.min=2.0 x.max=3.0 y.min=0.0 y.max=0.13
elec num=3 material=Titanium name=drain x.min=4.5 x.max=5.0 y.min=0.139 y.max=0.14 Electrode
elec num=2 material=Aluminum name=gate x.min=2.0 x.max=3.0 y.min=0.22 y.max=0.35 specification
elec num=1 material=Titanium name=source x.min=0.0 x.max=0.5 y.min=0.210 y.max=0.211
elec num=3 material=Aluminum name=drain x.min=4.5 x.max=5.0 y.min=0.210 y.max=0.211
#
doping uniform y.min=0.14 y.max=0.21 n.type conc=5.e16 Doping specification
 Input File in Deckbuild cont. (for illustration purpose only)
material material=InAs affinity=4.9
#
contact name=drain current
contact name=drain resistance=350 2. Material physical parameters, contacts and
contact name=source current interfaces.
contact name=source resistance=350
#
interf qf=1e12
#

model schrodinger.n eigens=20 fixed.fermi ^calc.fermi qy.min=0.05 qy.max=0.35 qx.min=2.0 qx.max=3.0 fermi new.eig
num.direct=1 qminconc=1.0e13 srh incomplete 3. Models to be used for simulations and
numerical methods to be solved with.
method itlim=20 nblockit=30 trap maxtrap=6 vsatmod.inc=0.01 carriers=0
#

output con.band val.band eigens=5

#
solve init

solve vgate=0 4. Solu=on specifica=on (what to solve for?).

save outf=trr.str

#
tonyplot trr.str 5. Displaying Solutions.
#
quit
Order of Atlas Commands
 Defining a Structure
1. If a structure is created in Athena or Devedit, use:
MESH INFILE=<filename>
2. If a structure is created in the same Deckbuild file, the command:
go atlas
will automa6cally load the most recently saved structure. In this case, MESH statement
in Atlas should not be used. ELECTRODE statement should be defined in Athena in this
case.
3. Using the Deckbuild command line:
MESH SPACE.MULT=<VALUE>
where <Value> is between 0 and 1 for refining the mesh for more accurate details in
the simulation, and greater than 1 for coarser mesh for fast simulations. Using this
feature, you wouldn’t need to re-write the whole mesh in case you needed to change
the mesh spacing.
X.MESH LOCATION=<VALUE> SPACING=<VALUE>
…
Y.MESH LOCATION=<VALUE> SPACING=<VALUE>
…
where x & y can be positive or negative but has to increase as you proceed in defining
the mesh and <VALUE> is in microns.
 Specifying Regions and Materials
Syntax:

REGION number=<integer> <material_type> <position parameters>

Example 1:

region num=1 material=Si3N4 y.min=0.0 y.max=0.14

This defines the material in region 1 to be silicon nitride extending over all values
of x (along the length of the device) and from ‘0’ to ‘0.14μm’ along its depth.
Example 2:

region num=1 material=Si3N4 x.min=0.0 x.max=0.05 y.min=0.0 y.max=0.14

This does the same as above but restricts the extent of silicon nitride in the x-
direction between ‘0’ and ‘50nm’.
Note: All points included in the MESH statement needs to have a region defined
for them.
 Specifying Electrodes and Doping
Electrode syntax:

ELECTRODE NAME=<electrode name> <position_parameters>

Example:

elec num=1 name=source x.min=0.0 x.max=0.5 y.min=0.139 y.max=0.14

Doping syntax:

DOPING <distribuMon_type> <dopant_type> <posiMon_type>

Example:
Doping uniform conc=5.e16 n.type region=1
OR:
Doping uniform conc=5.e16 n.type region=1 x.min=0 x.max=0.1 \
y.min=0 y.max=0.14
OR (see next page for profile):
Doping uniform con=1e16 n.type region=1
Doping Gaussian con=1e20 characteristic=0.5 p.type x.left=0.0 \
x.right=2.0 peak=0.5
0.5μm

70% of characteristic
 Regrid at Junctions
When there are abrupt changes in doping, composition, near contacts, etc, one
needs to regrid in order to achieve conversion without defining a fine grid all over
the structure:

Example:
regrid logarithm doping ratio=2 smooth.key=4

This creates a regrid when that resolves changes in doping profiles to 2 orders of
magnitude. smooth.key is a built in rou<ne to specify number of triangles at the
regrid loca<on with ‘4’ being a default value.

before regrid

after regrid
 Specifying Contact Characteristics
Examples:

contact name=gate workfunction=4.8

When a workfunction is specified, contact is treated as a Schottky contact.

‘barrier’ enables dipole or image force barrier lowering:

contact name=anode workfunction=4.9 barrier alpha=1e-7

sets the image force lowering coefficient to 1nm.

contact name=source con.resistance=0.05

sets the contact specific resistivity to 0.05 Ωcm2.

contact name=drain resistance=50 capacitance=20e-12 inductance=1e-6

sets series lumped elements with R=50Ω, C=20pF, L=1μH.

Since this is a 2D simulation, the channel width is 1 μm, meaning R=50Ω-μm & I in
A/μm.
Specifying Material & Interface Properties
Material statement allow modifying the basic physical parameters of a material used
in the input file.

Examples:
material material=Silicon EG300=1.12 mun=1100
sets the bandgap and low field mobility in all regions of the device.

material region=2 taun0=2e-7 taup0=1e-5

sets the electron and hole SRH recombination lifetimes in region 2

Interface statement defines interface charge density and surface recombinaGon

velociGes at semiconductor/insulator interfaces.

Examples:
interface qf=3e10 s.n=1e4 s.p=1e4
sets all interfaces between semiconductors and dielectrics to have a fixed charge
density of 3x1010 cm-2 and the electron and hole surface recombinaBon velociBes.

interface qf=3e10 x.min=1.0 x.max=2.0 y.min=0.0 y.max=0.5

sets the interface charge density to the rectangle defined above.
 Specifying Interface Traps
Syntax:

Inttrap <type> E.level=<real> density=<real> <capture parameters>

Examples:

inttrap e.level=0.49 acceptor density=2e10 degen=12 sign=2.48e-15 sigp=2.84e-14

inttrap e.level=0.32 donor density=1e10 degen=1 sign=1e-16 sigp=1e-17

degeneracy factor
capture cross-section for electrons

capture cross-section for holes

 Specifying Physical Models
Physical models used for simula1ons are classified into: mobility, recombina1on,
carrier sta1s1cs, impact ioniza1on, and tunneling.

Example:

models conmob fldmob srh fermidirac

activates concentration dependent mobility mobility models, field dependent mobility

models, SRH minority carrier recombination model, and Fermi-Dirac statistics model.

Some basic models are grouped for simulating certain devices. For example:

models MOS print

activates CVT, SRH, and fermidirac models. The ‘print’ lists to the run time output the
models and their parameters to be used in the simulation. One can always check
these to make sure if his/her models are activated properly.
CVT activates the transverse field mobility model.
 The Drift Diffusion Transport Model
Utilizes Poisson’s equation to solve for potential/field distribution and the continuity
equations for carrier statistics.
Ψ is the electrostatic potential

φn & φp are electron and hole quasi-Fermi energies

Temperature variations (energy of carriers) not taken into account à Energy Balance Model.
 Numerical Solution Techniques
Specified in the ‘method’ statement:
- Gummel: solves the equations sequentially (decoupled) until a convergence is
achieved.
- Newton: solves the equations simultaneously (coupled) but takes longer time to
converge.
- Block: combined Gummel and Newton (some equations coupled and some
decoupled).
method gummel block newton
starts solu)on with a few Gummel itera)ons to generate a be4er guess and then
switch to Newton to complete the solu)on.
recommended; sets the limit for
minimum resolvable carrier
method gummel newton climit=1e-4
concentration
sets the solver to start with Gummel itera)ons and then switch to Newton if
convergence is not achieved. (most recommended)

method carrier=2
solves for both electrons and holes (default)

method carrier=1 hole

solves for holes only
 DC Solutions
The voltage on each electrode is specified using the SOLVE statement:

Example:
solve init solves for initial guess at thermal equilibrium (zero bias)

solve vgate=2.0
solves for single bias points
solve vdrain=1.0

Bias sweep:

solve vgate=0 vstep=0.05 vfinal=2.0 name=gate

Sweeps the gate bias from ‘0’ to ‘2’ V in’ 0.05’ V increments.

Family of curves (example Ids-Vds at different Vgs):

solve vgate=1 outf=temp1

solve vgate=2 outf=temp2
load infile=temp1
log outf=drain_sweep_vgate1
solve name=drain vdrain=0 vstep=0.05 vfinal=2.0
load infile=temp2
…
 AC Solutions
Specified on top of DC biases to solve for conductance and capacitance between
different nodes:

Example:
solve vgate=0 vstep=0.05 vfinal=1 name=gate AC freq=1e6

Or:
solve vgate=0.5 AC freq=1e9 fstep=1e9 nfsteps=9
ramps the frequency from 1GHz to 10 GHz in 1 GHz step.

Displaying Results in Tonyplot

One can plot the output log file using tonyplot

Example:

tonyplot drain_sweep_vgate1.log

For a family of curves (example Ids-Vds at different Vgs):

tonyplot –overlay drain_sweep_vgate1.log drain_sweep_vgate2.log