‘Density of States Derivation by ofsines gives the nerf allowed cto orl) sates pr volume ta py ean be ene rn bse gant mechani. farcunction an leon is escriedby a waventonysy.2) The probably of pnat a specif point 2) given by p(c.2¥ whee tl zy. ds normalized on. the bottom of a conduction band (and holes atthe top ofthe valence ately like fee particles (wth an effective mass tapped in. 3 box. feonduction band cleetons, bu the result or holes ssi. For on ban: Iegby L, by L- with an infinite confining poten side), the elecron wavefunction y must po to 2=r0 (fa harmonic function within the region. The J=sin(&,x)sin(é,y)sin(k.2) ©andy, and are the wavevectrs fran electron inthe x,y, and z directions. The real wavefunction ina solids more complex and period (with the crystal latice), but this is @ good approximation fo the parabolic regions ner the band edges. WA ‘Onhogeal dectonsareanlogns, Enforcing the boundary conditions: Ax, =O, the sine functions go to ze, At the ‘opposite boundaries of the rectangular region, sin(t,l.)=10, sil ,)= 0, nd sin(L,)=0Ofor the xy, and = directions. The allowed wavevectors satisfy kL, =nn,.kL, sk, for, eps @ K Space ‘The allowed states canbe plotted as a grid of points ink space, 3-D visualization ofthe directions of electron wavevectors. Allowed states are separated by 2/1, inthe 3 irection ink pace ‘Thek space volume taken up by cach allowed satis 1,11, . The reciprocal isthe state density ink space (# of sates per volume ink space), 1/2” where isthe v ofthe semiconductor (in real space) " ‘The mumber of states availabe fora given magnitude of waverecor is found by constructing aspherical shell of radian thickness dT volume ofthis spheric shell ink space is 4k.Aaya waver aes ak safe aie Asc ell ges he ber allowed Sasa peste as “The numberof k tats within the spherical shell, (Rd, (anproximatel) the k space ‘volume mes the k space state density: saan] ® ach k stat cn hold 2 cerns (of opposite spins), so the numberof electron tates is actuate [Ee ) Final thre is relatively ube fsue.Wavefuntion tht ifr oly in sign ae sraety noble. Hence we shoud oun ony the postive no hy M sae 10 avoid ing the same gunn sine Th, we vide (a) yh the res tes sipa-se[Z]a-[ Ela @) piel Thisisan expression forthe mune of unig cleo sas valet Se Hover Pees, We nud an expression ners of energy rather han wavevestork, We + eee om he relationships between waveveco, momentum p nd energy E with wath effctve mass. Rewring, and mtn tat the ener of asin the i ond hen wih eps otc ono an es ene) Es pe aea i: c Ditrising ane i “s oy Combining (6) and (2)The numberof states available a givens found eS 8 given [is found using an annular region of rads and thickness date thn the spill mth -D ae. Tee aftr ue to the equivalent nature ofthe +/- states Gust as there was 18 inthe 3D case). The reais hale. The number ofk space states is weoa-[ Converting to energy using (7) [st 2s sts + qn 4 sla (9) iff] cereal (ea Cleaning up and dividing through by are, the density of tates per area at an energy E cover ringe dis sd mde stene = SE lke the 3-D case, this expression independent of energy EY 2 In areal structure (wich snot perfectly 2-D), there are ite energy ranges over which the energy independence hold (the derivation holds for each single, well separated posable value oF). The resulting density of sates fra quantum wells a taieas, as below in ed Further restriction ofthe semiconductor dimensionality to 1-D (quantum wire) and 0-D {Gnantum dot rests in more and more confined density of states functions Daaiy aS OD SSID A Low dimensional and confining nanostratures have lots of applications controling carers in semiconductor devices