Task-2

Transfer Characteristics of PMOS Transistor

Name : Vasireddy Bharat Sai
Reg.No : 16BEC0701

Aim:

To plot and verify the Transfer characteristics of a PMOS transistor and find
approximate Threshold voltage (Vtp).

Circuit Diagram:

Components details:

Components Library Cell Name View Name Instance Name

NMOS gpdk090 nmos1V symbol NM0
Transistor
VGS AnalogLib vdc symbol VGS
(D.C source)
VDS AnalogLib vdc symbol VDS
(D.C source)
Ground AnalogLib gnd symbol gnd

Procedure:

1. Circuit/Schematic was designed

2. VDS and VGS are set with appropriate value

3. Check and saved without / after rectify any warnings and errors

4. ADE L was invoked for device simulation

5. DC analysis was chosen

6. “VGS” was chosen as component, “dc” was selected as parameter for “x-
axis” and appropriate value assigned to minimum and maximum

7. Drain current (“Id”) was chosen as output

8. Schematic was simulated and Threshold value was found.

Wave form:

Result:

Transfer-characteristics of a PMOS transistor was plotted and Threshold

voltage (Vtp) was found.
 V-I Characteristics of PMOS Transistor

Aim
:
To plot and verify the V–I (Drain) characteristics of a PMOS transistor with different
VGS value and determine λ.

Circuit Diagram:

Components details:

Components Library Cell Name View Name Instance Name

NMOS gpdk090 nmos1V symbol NM0
Transistor
VGS AnalogLib vdc symbol VGS
(D.C source)
VDS AnalogLib vdc symbol VDS
(D.C source)
Ground AnalogLib gnd symbol gnd

Procedure:

1. Circuit/Schematic was designed

2. 1.2 V was assigned to VDS

3. A variable name (vgs) was to the value of VGS

4. Check and saved without / after rectify any warnings and errors

5. ADE L was invoked for device simulation

6. DC analysis was chosen

6. “VDS” was chosen as component, “dc” was selected as parameter for “x-
axis” and appropriate value assigned to minimum and maximum

7. Drain current (“Id”) was chosen as output

8. Parametric analysis was chosen from “Tool” and appropriate value for vgs and
step sizes were given.

9. Schematic was simulated

10. Channel length modulation parameter (λ) was determined.

Wave form:

Vds Vs Ids:
Vgs Vs Ids:

Calculation:

Linear

region:

Id = β(Vgs - Vtn - )Vds

Saturation region:

Id = (Vgs - Vtn )2 (1 + λVds)

Result:

V – I Characteristics of a pmos was verified and λ was determined.