MITSUBISHI Nch POWER MOSFET

FS30KMJ-03
HIGH-SPEED SWITCHING USE

FS30KMJ-03 OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

6.5 ± 0.3
3 ± 0.3
15 ± 0.3
f 3.2 ± 0.2

3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25

4.5 ± 0.2
1 2 3

2.6 ± 0.2
w
¡4V DRIVE
¡VDSS ................................................................................. 30V q GATE
w DRAIN
¡rDS (ON) (MAX) ............................................................. 38mΩ q
e SOURCE
¡ID ........................................................................................ 30A
¡Integrated Fast Recovery Diode (TYP.) ............ 45ns e
¡Viso ............................................................................... 2000V TO-220FN

APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit

VDSS Drain-source voltage VGS = 0V 30 V
VGSS Gate-source voltage VDS = 0V ±20 V
ID Drain current 30 A
IDM Drain current (Pulsed) 120 A
IDA Avalanche drain current (Pulsed) L = 30µH 30 A
IS Source current 30 A
ISM Source current (Pulsed) 120 A
PD Maximum power dissipation 20 W
T ch Channel temperature –55 ~ +150 °C
T stg Storage temperature –55 ~ +150 °C
Viso Isolation voltage AC for 1minute, Terminal to case 2000 V
— Weight Typical value 2.0 g

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS30KMJ-03
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 30 — — V
IGSS Gate-source leakage current VGS = ±20V, VDS = 0V — — ±0.1 µA
IDSS Drain-source leakage current VDS = 30V, VGS = 0V — — 0.1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 1.0 1.5 2.0 V
rDS (ON) Drain-source on-state resistance ID = 15A, VGS = 10V — 29 38 mΩ
rDS (ON) Drain-source on-state resistance ID = 15A, VGS = 4V — 44 73 mΩ
VDS (ON) Drain-source on-state voltage ID = 15A, VGS = 10V — 0.435 0.57 V
y fs Forward transfer admittance ID = 15A, VDS = 5V — 15 — S
Ciss Input capacitance — 800 — pF
Coss Output capacitance VDS = 10V, VGS = 0V, f = 1MHz — 250 — pF
Crss Reverse transfer capacitance — 110 — pF
td (on) Turn-on delay time — 14 — ns
tr Rise time — 55 — ns
VDD = 15V, I D = 15A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 65 — ns
tf Fall time — 60 — ns
VSD Source-drain voltage IS = 15A, VGS = 0V — 1.0 1.5 V
Rth (ch-c) Thermal resistance Channel to case — — 6.25 °C/W
trr Reverse recovery time IS = 15A, dis/dt = –50A/µs — 45 — ns

PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
40 2
102
POWER DISSIPATION PD (W)

7
DRAIN CURRENT ID (A)

32 5
tw = 10ms
3
2
24 100ms
101
7
5
16 1ms
3
2
TC = 25°C 10ms
100 Single Pulse
8 7 DC
5
3
0 2
0 50 100 150 200 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)
VGS = 10V
50 20
6V Tc = 25°C
8V 3V
Pulse Test
6V
VGS = 10V
4V
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

40 16
8V 4V
PD = 20W

30 12
2.5V

20 3V 8

2V
10 4
PD = 20W
Tc = 25°C
2V Pulse Test
0 0
0 1.0 2.0 3.0 4.0 5.0 0 0.4 0.8 1.2 1.6 2.0

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS30KMJ-03
HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
5.0 50
Tc = 25°C Tc = 25°C
Pulse Test Pulse Test

RESISTANCE rDS (ON) (mΩ)

DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
VGS = 4V
4.0 40
VOLTAGE VDS (ON) (V)

3.0 30
10V
2.0 20
ID = 50A

1.0 30A 10
10A
0 0
0 2 4 6 8 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
40 102
Tc = 25°C VDS = 5V
VDS = 10V
7 Pulse Test
Pulse Test 5
DRAIN CURRENT ID (A)

32 4
FORWARD TRANSFER
ADMITTANCE yfs (S)

3
TC = 25°C 75°C
2
24 125°C

101
16 7
5
4
3
8
2

0 100 0
0 2 4 6 8 10 10 2 3 4 5 7 101 2 3 4 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
2 102
Tch = 25°C td(off)
104 7
f = 1MHZ
7 VGS = 0V 5 tf
5 4
SWITCHING TIME (ns)
Ciss, Coss, Crss (pF)

3 3
tr
CAPACITANCE

2 2 td(on)
103 Ciss
7 101
5
7
3 Coss
2 5
4
Crss
102 3 Tch = 25°C
7 VDD = 15V
5 2
VGS = 10V
3 RGEN = RGS = 50Ω
2 100 0
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 10 2 3 4 5 7 101 2 3 4 5 7 102

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS30KMJ-03
HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 50
VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)

Tch = 25°C
ID = 30A Pulse Test

SOURCE CURRENT IS (A)

8 40

6 30
VDS = 10V
20V
4 20 TC = 125°C
25V 75°C
25°C
2 10

0 0
0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 4.0
7 VGS = 10V VDS = 10V
ID = 1/2ID ID = 1mA
GATE-SOURCE THRESHOLD

5 Pulse Test
4 3.2
VOLTAGE VGS (th) (V)

3
2
2.4
100
7 1.6
5
4
3
0.8
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
1.4 102
VGS = 0V 7
ID = 1mA 5
1.2 3
2
101
7 D = 1.0
1.0
5 0.5
3
2 0.2 PDM
0.8
100 0.1
tw
7 T
5 0.05
0.6 0.02 D= tw
3 T
0.01
2
Single Pulse
0.4 10–1 –4
–50 0 50 100 150 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Feb.1999
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