Beruflich Dokumente
Kultur Dokumente
ELECTRONICS
Department Department of of Electronics Electronics and and Communication
Communication Engineering, Engineering, MIT, MIT, Manipal Manipal
2
1
Part – I :
Analog
Electronics
Reference:
Robert L.
Boylestad, Louis
CHAPTER-1: Nashelsky,
Electronic Devices
DIODES AND
& Circuit Theory,
APPLICATONS
11th Edition, PHI,
2012
differentiate between ideal
and practical diodes
Semiconduct 2
Review
ors
Semiconductors
Common semiconducting materials Crystal structure
of silicon
http://fourier.eng.hmc.edu/e84/le ctures/ch4/node1.html
http://www.austincc.edu/HongXiao/overvie
w/basic-semi/sld007.htm
Department of Electronics and Communication Engineering, MIT, Manipal
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Doping in Semiconductors
6
Self test
7
P-N Junction Diode
Anode Cathode P N
Common practical diodes available in market
8
P-N Junction Diode- conti...
9
P-N Junction Diode under
biasing
P-N junction (a) in contact (b) formation of
depletion region
[http://www.imagesco.com/articles/photovoltaic/photo
voltaic-pg3.html].
10
P-N Junction Diode under biasing
condition
Unbias condition
11
Forward bias
▪ Positive of battery connected to p-type
(anode)
▪ Negative of battery connected to n-type
(cathode)
13
Self test
14
I-V characteristic of practical
diode
Department of Electronics and Communication Engineering, MIT, Manipal
15
Diode (mA)
symbol
PN
Vγ is
0.6 ~ 0.7 Vfor Si
0.2 ~ 0.3 V for Ge
(μA)
eII
D = o ( VV
T
Dη
eI
- )1 = o VV
Dη
I
-
T
o
≈
bias), ID
–Io
Department of Electronics and Communication Engineering, MIT, Manipal
17
Effect of Temperature on the
Reverse current
Reverse current doubles for every 10 degree rise
in temperature.
II
o2
o1
2 (
-
TT 12 10/) Q. A Silicon diode has a saturation current
of 1pA at 200C. Determine (a) Diode bias voltage when
diode current is 3mA (b) Diode bias current when the
temperature changes to 1000C, for the same bias
voltage.
A.
eII ⎛ │
D = 0 │⎝18
η
VD ⎞
VT - 1
│ = T = = mV ⎛
│⎠VT 11600 293
11600 25.25 = η
VV D T 1ln
│ ⎞ │ =
│⎝+ I ID 0 │⎠ 103.1 V 2
II 02 =
01 )/10T(T
12 -
⎛ │
= 10 - 12 │⎝)10100(
10
- 2
⎞ ││⎠= 256
pA I D
⎛
= 10256 x - 12
││
│⎝e 1015.322( x 103.1
x -
- )1 ⎞
│
3 ││⎠= 21.7
mA Department of Electronics and Communication
Engineering, MIT, Manipal
I (mA)
–75oC
125oC
o
25 C V (volts) r d =
∆ ∆V I D D r d =
∆ ∆V I D D r d =
I (μA)
∆ ∆V I D D r d =
V
∆ ∆ ID D
Department of Electronics and
Communication Engineering, MIT, V
Manipal ∆ ∆ ID D
19 V
▪ Static or DC ∆ ∆ ID D
resistance: V D
∆ ∆ ID
• ratio of diode voltage
η
and diode current ≈ IV D T
η
R =
IV
D
D D ≈ IV D T
AC resistance: η
≈ IV D T
η
≈ IV D T
η
≈ IV D T
Diode
resistances
20
Diode Equivalent Circuit
▪ Used during circuit analysis
▪ Characteristic curve replaced by
straight-line segments
AK
A K Reverse bias
22
I-V characteristic of
Diode Equivalent Circuit
▪ As further approximation, we can neglect
the slope of the characteristic i.e., RF =
0
AK
RF =
0
AK
Forward bias RR =
∞
Vγ
Vγ
A K Reverse bias Department of Electronics and Communication
Engineering, MIT, Manipal
23
Diode Equivalent Circuit
AK
RF =
0
A K Reverse bias
AK
Forward bias
RR =
∞
Department of Electronics and
Communication Engineering, MIT,
Vγ = 0 Manipal
24
Self test
1. The
break-point
Department of Electronics and
voltage of Si Communication Engineering, MIT,
Manipal
diode is 25
• Zener
Breakdown:
• Occurs in heavily
doped diodes.
• at lower reverse
bias voltages.
Schematic of
Avalanche
phenomenon
Department of Electronics and
Communication Engineering, MIT, http://shrdocs.com/pres
Manipal
entations/12656/index.ht
ml
27
Zener
Breakdown
Schematic of
Zener
phenomenon
http://shrdocs.com/pres
entations/12656/index.ht
ml
28 IZM or IZMax
Zener Diode
PZM or PZMax
and its
characteristic PZM =
VZ.IZM
s I-V characteristics of
Zener diode
P P N N
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Communication Engineering, MIT,
Anode Cathode Manipal
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30
Diode as capacitor- Varactor
diode
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31
Ax ε
d C =
Self test
32
Self test
33
Exercises
1. Calculate the dynamic forward and reverse
resistance of a P - N junction diode, when the
applied voltage is 0.25V for Germanium Diode. I0 =
lμA and T = 300 K.
(Ans:rf=1.734 Ω; rr=390 MΩ)
34
Part – I : Analog
Electronics
Module – 2 : Applications of
Diodes
Reference: Robert L. Boylestad,
Louis Nashelsky, Electronic Devices
& Circuit Theory, 11th Edition, PHI,
2012
35
Application of ▪ Discuss basic DC
Diodes power supply unit.
36
CONTENT ▪ Capacitor
filter
▪ Introduction
rectifier
Manipal
37
INTRODUCTION
▪ What is an AC and an DC signal?
▪ Eg. of AC signal
AtVin )( =
)2(sin π ft
tVin )( = )502(sin2230 π t
Define
▪ Average value
▪ RMS or effective value
30V, f=5
Fig. 1: AC signal with A=2 0Hz
Note: The average or DC value of this
signal is equal to zero.
Electricity Distribution in INDIA: AC signal
of 230V, 50HZ. Necessity of DC power:
Many electronic gadgetsDepartment of Electronics and
Communication Engineering, MIT, Manipal
38
INTRODUCTION
DC power supply
39
INTRODUCTION
Activity
41
CONTENT
Department of Electronics and
▪ Introduction: ▪ Capacitor
Basic DC filter
power supply
rectifier Manipal
42
(HWR) HALF WAVE
RECTIFIER
▪ Full wave (HWR)
rectifiers:
1) Center tapped
FWR 2) Bridge
Rectifier
44
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Communication Engineering, MIT,
Manipal
Working HWR
Fig 7: Circuit of
HWR
46 RECTIFIER
RECTIFIER
Performance of Rectifiers is measured
using the following
parameters:
• DC voltage
• Peak Inverse Voltage ( PIV)
• Ripple factor
• Efficiency
V
dc γ =
V
rms
Vd c 2- 1 =
⎛ ││││
│⎝η
V rms R Vdc 2
R ⎞ ││││
L L2 │⎠Department of Electronics and
Communication Engineering, MIT, Manipal
47
HALF WAVE RECTIFIER
Assume ideal diodes
sin(ωt)
▪ During positive cycle i= Im
Peak current
▪ During negative half cycle, i = 0
Average value of load current in
π
2
∫ π tdi )( ω 0
I
= mπ
Department of Electronics and Communication Engineering, MIT, Manipal
48
Half Wave Rectifier
▪ Average output voltage is
▪ RMS value of load current in half
wave rectifier is:
▪ RMS output voltage is
RIV = ⌈
dc Ldc I rms
=
│ 1
│⌊2 π
π 2
2∫ tdi
0
)( ω ⌉
1 I
││⌋ 2= m2
RIV =
rms rms L Department of Electronics and
Communication Engineering, MIT, Manipal
49
▪ PIV : voltage.
should be greater than Vm, peak o
f
secondary
▪ Ripple factor is:
Half Wave Rectifier
▪ Efficiency:
2
γ =
⎛ ││
21.11 │⎝2 π
⎞ │ V m rms R
││⎠ Vm- = η = ⎛ │││││⎝2 V 2
V dc R ⎞ ││││
L L │⎠=
50
HWR
Self Test
1. HWR is used to rectify
the AC signal which has peak value
of 25V. Which all diodes can be
selected whose PIV rating is (a) 5V
(b) 15V (c) 30V (d) both a and b
ACTIVITY: Do it yourself
this changed
2. what happens
circuit
when the diode
change?Department of
connection is Electronics and Communication
Engineering, MIT, Manipal
reversed? Draw 51
the input and Half Wave
output Rectifier
waveform. Will
the values of
Advantages of
PIV, ripple factor
and efficiency for HWR
• Simple circuit Department of Electronics and
Communication Engineering, MIT,
Manipal
• Single diode 52
CONTENT
• PIV rating is
Vm
▪ Introduction:
Disadvantages
Basic DC
of HWR power supply
• High ripple
factor ▪ Half wave
rectifier
• Low (HWR)
efficiency
▪ Center
tapped Full
Wave
Fig.12 center
rectifier tapped FWR
(FWR)
54
Department of Electronics and
Department of Electronics and
Communication Engineering, MIT,
Communication Engineering, MIT,
Manipal
Manipal
53
Center Tapped FWR
Working of center tapped
FWR
tapped FWR for
node A is positive
w.r.t B
Fig. 15: Center
tapped FWR for
node B is positive
w.r.t. A
56
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Center
Fig. 16 : Input Tapped FWR
secondary and
Center tapped FWR
• The Average of output voltage
=
V av
= π
V dc
π ω ω 2 V
1 ⌈│⌊∫ 0 )()(sin
Vm tdt ⌉ │⌋= π m• The
Average of output current
I d c =
V dc
R
= π
L
2 V
Rm
2 I
L= π
∫ 0 π
)()sin(
V m ω tdt 2
V
ω = m 2 I r ms =
I m
2Department of Electronics and Communication Engineering, MIT, Manipal
57
58
Center Tapped FWR
Self Test Choose the correct answer: (T is
the time period of the input signal) 1. In
HWR, the diode is forward biased for what
duration of the time period? (a) T/2 b) T/4 c)
3T/4 d) T
• High Efficiency
• Uses 2 diodes
Solution: ....
61
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Manipal
Fig.17(a) : Bridge
Department of Electronics and FWR
Communication Engineering, MIT,
Manipal
Bridge 62
rectifier
Fig.17 (b): Bridge
Department of Electronics and FWR
Communication Engineering, MIT,
Manipal
Bridge 63
rectifier
Working of
Bridge FWR
Note: Current
through load for
both cycles is in
same direction
(from node C to
ground)
Department of Electronics and
Communication Engineering, MIT,
64 Manipal
Fig. 18: Bridge Fig. 19: Bridge
FWR when node A FWR when node B
is positive w.r.t B is positive w.r.t. A
Bridge FWR
Simulation of FWR
66
Comparison of Rectifiers
• Advantages of HWR over FWR
2 m
mV V2 m V mV
ππ π
mV m V V2 V m
222 m m 1.21 0.483 0.483
40.6% 81.2% 81.2%
f f2 if2
i iD epartment of Electronics and Communication Engineering, MIT,
Manipal
68
Capacitor Filter
69
Capacitor Filter
Fig 21: C type filter with HWR
71
Capacitor Filter
Fig 22: C type filter with Bridge
FWR
Capacitor Filter
Fig. 23 Filtered output waveform
using C type filter
Communication Engineering, MIT,
Manipal
72
Department of Electronics and
r
=
fCR r
32 1 L • For FWR
=
fCR
34 1 L Department of Electronics and
73
Ripple factor with Capacitor
Filter
• DC value of filtered output for
HWR
V d c =
21
CRf CRfL L
+ 2
Vm
• DC value of filtered output for
FWR
V
dc =
41
CRf CRf V
+ 4
L L mNote: here f is
the frequency of the input signal
Department of Electronics and Communication Engineering, MIT, Manipal
74
Comparison of Rectifiers
Parameters of
rectified signal
HWR FWR
Vdc
Ripple factor
CRf CRf
2 L 21 +
V CRf
L m4 1
L4
+
r fCR r
CRf L V
m 32 L
= =
1
75
Summary
77
Exercise Problems
Module – 3:
Voltage
Regulators
Department of Electronics and
Communication Engineering, MIT,
Manipal
78
Part – I : Reference:
ANALOG
ELECTRONICS Robert L.
Boylestad, Louis
Nashelsky,
Electronic Devices
& Circuit Theory,
CHAPTER-1: 11th Edition, PHI,
2012
▪ Describe the
Department of Electronics and
Communication Engineering, MIT, working of Zener as
Manipal
1 voltage regulator
Module – 3:
▪ Discuss the IC
Voltage based voltage
Regulators regulator.
Learning
Outcomes:
80
will be able to:
Zener voltage
regulation
Communication Engineering, MIT,
Manipal
81
III
=
z+ L = in
- z R s =
VV in
- z
I R =
VV LZ +- (i) For Line regulation, RL is constant I and
= RV
Z
L
L
is also constant and Vin varies
bet.
Vin(min) to
Vin(max) I
VV in
zs
II
line regulation and load
regulation
R
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82