Presented by:- Shikha Gupta

(UE6558)
NANOELECTRONICS
 Branch of Engineering which uses
nanometer scale elements in
design of integrated circuits such
that one of the three dimensions of
the electronic component is in nm.

 Generally, Nanometer scale refers

to electronic circuits less than
100nm.

 1 nm= 10-9 metres

MOORE’S LAW
According to Moore’s Law, the
number of transistors that will fit
on a silicon chip doubles every
eighteen months.
 Presently, microprocessors have
more than forty million transistors
 By the year 2020, the trend line of
Moore’s law states that there
should be a one nanometer
feature size.
SCALING PRINCIPLES
 For designing nano FET apart from
channel length, other parameters
like doping, voltages etc. are to be
also scaled.
Original Device

Scaled Device
 NANO MOSFET

EJ MOSFET (Electrically variable

shallow junction MOSFET)
SCALING LIMITS OF MOSFET
 Technical problem: For channel
length<30nm , insulating SiO2 is
expected to be less than 2nm thick.
This thin layer causes gate
dielectric tunneling
 Physical problem: For channel
length<10nm, direct source-drain
tunneling occurs.
Schematic representation of Gate –dielectric
tunneling and Direct source-drain tunneling
EJ- MOSFET
 Construction
It consists of 2 gates :Upper gate
and a lower gate. Gates are
insulated from each other by an
integrate oxide layer
 Working

 Upper layer electrically induces the

inversion layers that are self aligned
to the lower gate and the lower gate
controls the current between the
inversion layer.

 Presence of two gates helps in

suppressing short channel effects
QUANTUM EFFECTS IN
ULTRASHORT CHANNEL MOSFET
 Mobility enhancement due to
decrease in scattering
 Threshold voltage increases with
decrease in channel width
THRESHOLD VOLTAGE ADJUSTMENT
USING QUANTUM EFFECTS

 For <110> oriented device n type

has greater VT shift than p type
 For <100> oriented device p type
has greater VT shift than n type
 To keep VT same for both square
scaling i.e. width = height is used.
BASIC PHENOMENON
OBSERVED IN NANO
DEVICES
BALLISTIC TRANSPORT IN
NANO STRUCTURES
 At room temperature mean free
path of electron is around 10nm.So,
at ultrashort channel length electron
scattering decreases considerably.
 At channel length less than
10nm,scattering approaches zero. It
is called ballistic transport.
 With decrease in temperature mean
free path can be increased &
ballistic transport can be obtained at
larger channel length.
RESONANT TUNNELING IN
NANO DEVICES
 RT is observed in hetero-structure
semiconductor devices made from
pairs of different alloys III-V alloys.
 Eg. AlGaAs/GaAs/AlGaAs diodes
 MISCELLANEOUS
NANO-STRUCTURES
Carbon nanotubes & nanowires
CARBON NANOTUBES
Single-wall carbon
nanotubes are a
new form of
carbon made by
rolling up a single
graphite sheet to a
narrow but long
tube closed at
both sides by
fullerene-like end
caps..
PROPERTIES
 Exhibit electrical conductivity as
high as copper, thermal conductivity
as high as diamond
 Strength 100 times greater than
steel at one sixth the weight
 Electrical conductivity depends on
their helicity.
CURRENT APPLICATIONS
In field of electronics & communication

 In solar cells to trap electrons

 Touch screens and flexible displays
 nanoradio, a radio receiver consisting
of a single nanotube, was
demonstrated in 2007
 In fabrication of ultracapacitors
(which have high energy density)
NANOWIRES
 Electrons in nanowires are quantum
confined laterally and thus occupy
energy levels that are different from
that in bulk materials.

 Aspect ratios (length-to-width ratio)

of 1000 or more

 Poor conductivity (edge effect)

APPLICATIONS
Current
 Create active
electronic devices
like logic gates etc.
Potential use
 As photon ballistic waveguides
 For connecting molecular-scale
entities in a molecular computer
 For flexible flat-screen displays
 RECENT
DEVELOPMENTS IN
FIELD OF
NANOELECTRONICS
WORLD’S SMALLEST
TRANSISTOR

Graphene Transistor
WORLD’S smallest transistor
Abilityto retain conductivity when only one
atom thick.
a small sheet of graphene is taken &
channels are carved into it using electron
beam lithography. What remains is a
quantum dot with a tiny
circular cage at the center
known as the central island.
Voltage can change the
conductivity of these
quantum dots, allowing
them to store logic states
Graphene Sheets
Schematic diagram of graphene
transistor
 NANO RADIO

First Radio at nano-scale

NANO RADIO
 A nanoradio is a radio receiver or
transmitter constructed on a
nanometer scale.

 Currently only receivers have been

developed( October 2007)
WORKING
 The nanotube, is contained in a
vacuum and one of its ends is
connected to an electrode of a
battery. The other electrode is
placed a short distance from the
nanotube's other end. The tube will
vibrate in tune with any external
electromagnetic signal, effectively
acting as an antenna. The vibration
frequency can be adjusted by
changing the applied voltage.
NANO RADIO
NANO EMISSIVE
DISPLAY
NANO EMISSIVE DISPLAY
 Launched in May,2005 by motorola

 Works by moving electrons through

its driver electronics and into the
nanotubes, which then direct the
electrons at groups of phosphors
(pixels) on the interior surface of the
display. When the phosphors are
bombarded with electrons, they
glow, giving off color—similar to the
operation of a traditional CRT
ADVANTAGES
 Light in weight and more slim

 Saves 20% to 30% more power

than other flat panel displays

 Manufacturing cost is estimated to

be a half to a third the cost of LCD
and plasma displays
APPLICATION

 Laptop screen due to better power

saving & size
 Screens in fighter planes due to
better brightness & resolution
 Automotive and aeronautical
purposes
 TV displays