SEMICONDUCTOR DEVICE SIMULATION & PROCESS

MODELLING LAB

NAME –AASIF KHAN

ROLL -M180019EC
DEPT -ECE
SPEC – MICROELECTRONICS & VLSI DESIGN

1
 INDEX

SL PROGRAM NAME PAGE DATE REMARK

NO.
1. PROGRAM ON P-N 3-5 10.10.18
JUNCTION SCHOTTKY DIODE

2. PROGRAM ON P-N 5-7 17.10.18

JUNCTION DIODE USING
GAUSS METHOD

3. PROGRAM ON ZENER DIODE 8-10 29.10.18

BREAKDOWN

4. PROGRAM ON BIPOLAR 10-12 05.11.18

JUNCTION TRANSISTER

5. PROGRAM ON MOSFET AND 13-16 26.11.18

Id-Vgs AND THRESHOLD
VOLTAGE EXTRACTION

6. PROGRAM ON MOSFET AND 16-19 03.12.18

Id-Vds
CHARACTERISTICS

SIGNATURE OF THE HEAD OF THE DEPARTMENT

2
1.WRITE A SILVACO PROGRAM ON P-N JUNCTION
SCHOTTKY DIODE USING NEWTON METHOD:
OBJECTIVE:
The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and
nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale
for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows
Ohms Law and at higher voltages, the mechanism is consistent with space charge limited
conduction (SCLC) emission.

CODE:
go atlas

mesh space.mult=1.0
x.mesh loc=0.00 spac=0.5
x.mesh loc=3.00 spac=0.2
x.mesh loc=5.00 spac=0.25
x.mesh loc=7.00 spac=0.25
x.mesh loc=9.00 spac=0.2
x.mesh loc=12.00 spac=0.5
#
y.mesh loc=0.00 spac=0.1
y.mesh loc=1.00 spac=0.1
y.mesh loc=2.00 spac=0.2
y.mesh loc=5.00 spac=0.4

region num=1 silicon

electr name=anode x.min=5 length=2

electr name=cathode bot

#.... P-epi doping

doping p.type conc=5.e18 uniform

#.... Guardring doping

doping p.type conc=1e20 x.min=0 x.max=3 junc=1 rat=0.6 gauss
doping p.type conc=1e20 x.min=9 x.max=12 junc=1 rat=0.6 gauss

#.... N+ doping
doping n.type conc=1e19 x.min=0 x.max=12 y.top=2 y.bottom=5 uniform

save outf=diodeex01_0.str
tonyplot diodeex01_0.str -set diodeex01_0.set

model conmob fldmob srh auger bgn

#contact name=anode workf=4.97

3
solve init

method newton

log outfile=diodeex01.log
solve vanode=0.05 vstep=0.05 vfinal=1 name=anode
tonyplot diodeex01.log -set diodeex01_log.set
quit

TONYPLOT:

4
I-V CHARACTERISTICS:

CONCLUSION:
Schottky diode consists of high potential barrier & high doping concentration.So we can use
it as rectifier.That’s why it’s also called rectifying M-S contact diode.

2.WRITE A SILVACO PROGRAM ON P-N JUNCTION DIODE

USING GAUSS METHOD:
OBJECTIVE:
The P-N junction is the basic element for semiconductor diodes. A Semiconductor
diode facilitates the flow of electrons completely in one direction only – which is the
main function of semiconductor diode. It can also be used as a Rectifier.

CODE:
go atlas

mesh space.mult=1.0
#
x.mesh loc=0.00 spac=0.5
x.mesh loc=3.00 spac=0.2
x.mesh loc=5.00 spac=0.25
x.mesh loc=7.00 spac=0.25
x.mesh loc=9.00 spac=0.2
5
x.mesh loc=12.00 spac=0.5
#
y.mesh loc=0.00 spac=0.1
y.mesh loc=1.00 spac=0.1
y.mesh loc=2.00 spac=0.2
y.mesh loc=5.00 spac=0.4

region num=1 silicon

electr name=anode x.min=5 length=2

electr name=cathode bot

#.... P-epi doping

doping p.type conc=5.e18 uniform

#.... Guardring doping

doping p.type conc=1e20 x.min=0 x.max=3 junc=1 rat=0.6 gauss
doping p.type conc=1e20 x.min=9 x.max=12 junc=1 rat=0.6 gauss

#.... N+ doping
doping n.type conc=1e19 x.min=0 x.max=12 y.top=2 y.bottom=5 uniform

save outf=diodeex01_0.str
tonyplot diodeex01_0.str -set diodeex01_0.set

model conmob fldmob srh auger bgn

#contact name=anode workf=4.97

solve init

method gauss

log outfile=diodeex01.log
solve vanode=0.00 vstep=0.5 vfinal=10 name=anode
tonyplot diodeex01.log -set diodeex01_log.set
quit

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TONYPLOT:

I-V CHARACTERISTICS:

CONCLUSION:
Here we can conclude that by changing the doping concentration , we can change the I-V
characteristics slope more stepper or flat.

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3.WRITE A SILVACO PROGRAM ON ZENER DIODE
BREAKDOWN:
OBJECTIVE:
The objective of the use of Zener diodes to build a circuit which provides a constant or regulated output
voltage over a range of input voltages and load currents.

CODE:
go athena
#
line x loc=0.00 spac=0.2
line x loc=1 spac=0.1
line x loc=1.1 spac=0.02
line x loc=2 spac=0.25
#
line y loc=0.00 spac=0.02
line y loc=0.2 spac=0.1
line y loc=0.4 spac=0.02
line y loc=2 spac=0.5
#
init silicon c.phos=5.0e18 orientation=100
#
deposit oxide thick=0.50 divisions=5
#
etch oxide left p1.x=1
#
implant boron dose=1.0e15 energy=50 pearson tilt=7 rotation=0 amorph
#
method fermi compress
diffus time=30 temp=1000 nitro press=1.00
#
extract name="xj" xj material="Silicon" mat.occno=1 x.val=0 junc.occno=1
extract name="rho" sheet.res material="Silicon" mat.occno=1 x.val=0 region.occno=1

etch oxide all

deposit alum thickness=0.2 div=3
etch alum right p1.x=1.0

electrode name=anode x=0.0

electrode name=cathode backside

structure outf=diodeex05_0.str
tonyplot diodeex05_0.str -set diodeex05_0.set
go atlas
models bipolar bbt.std print
impact selb
method newton trap maxtrap=10 climit=1e-4
solve init
log outf=diodeex05.log

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solve vanode=-0.25 vstep=-0.25 vfinal=-10 name=anode
tonyplot diodeex05.log -set diodeex05_log.set

extract init infile="diodeex05.log"

extract name="bv" min(v."anode")
extract name="leakage" x.val from curve(v."anode",abs(i."anode")) where y.val=1e-10

quit

TONYPLOT:

I-V CHARACTERISTICS:

9
CONCLUSION:
Zener diodes are widely used as voltage references and as shunt regulators to regulate
the voltage across small circuits. When connected in parallel with a variable voltage source
so that it is reverse biased, a Zener diode conducts when the voltage reaches
the diode's reverse breakdown voltage. That’s way we can treat it as a voltage regulator.

4.WRITE A SILVACO PROGRAM ON BIPOLAR JUNCTION

TRANSISTER:
OBJECTIVE:
The BJT makes a good amplifier, since it can multiply a weak input signal to about 100 times
its original strength.

CODE:
go atlas

mesh space.mult=1.0
#
x.mesh loc=0.00 spac=0.5
x.mesh loc=1.00 spac=0.2
x.mesh loc=2.00 spac=0.2
x.mesh loc=3.00 spac=0.5
#
y.mesh loc=0.00 spac=0.1
y.mesh loc=0.50 spac=0.2
y.mesh loc=1.00 spac=0.5

region num=4 silicon

electr name=emitter x.min=0.25 length=0.5

electr name=base x.min=1.25 length=0.5
electr name=collector x.min=2.25 length=0.5

#.... emitter doping

doping n.type conc=5e17 x.min=0 x.max=1 y.min=0 y.max=0.5 uniform
#.... base doping
doping p.type conc=5e18 x.min=1 x.max=2 y.min=0 y.max=0.5 uniform
#.... collector doping
doping n.type conc=5e20 x.min=2 x.max=3 y.min=0 y.max=0.5 uniform

#.... n-type substrate

doping n.type conc=5e16 x.min=0 x.max=3 y.min=0.5 y.max=1 uniform

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save outf=bjtplanner.str
tonyplot bjtplanner.str

model bipolar bbt.std

solve init
method newton
log outf=bjtplanner.log
solve vcollector=1
solve vbase=0.1

solve vbase=0.0 vstep=0.05 vfinal=2 name=base

tonyplot bjtplanner.log
quit

TONYPLOT:

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I-V CHARACTERISTICS:

APPLICATIONS:
o The bipolar junction transistor (BJT) is used in logic circuits.
o The BJT is used as an oscillator.
o It is used as an amplifier.
o It is used as a multivibrator.
o For wave shaping it is used in clipping circuits.
o Used as a detector or demodulator.
o It is also used as modulator.
o Used in timer and time delay circuits.
o It is used in electronics switch.
o It is used in switching circuits.

CONCLUSION:
BJT consists of three terminals : emitter, base, collector. For each region we can get different
I-V characteristics by changing the biasing voltage.

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5.WRITE A SILVACO PROGRAM ON MOSFET AND Id-Vgs
AND THRESHOLD VOLTAGE EXTRACTION:
OBJECTIVES:
The most important objective for the MOSFET is to fabricate the chip or microelectronics
devices and get more accurate mobility, speed, performance, compactness, sustainability.

CODE:
go athena

#
line x loc=0.0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.6 spac=0.01
#
line y loc=0.0 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15

init orientation=100 c.phos=1e14 space.mul=2

diffus time=30 temp=1000 dryo2 press=1.00 hcl=3

etch oxide thick=0.02
implant boron dose=8e12 energy=100 pears

diffus temp=950 time=100 weto2 hcl=3

diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
etch oxide all
diffus time=20 temp=1000 dryo2 press=1 hcl=3
etch oxide all
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
extract name="gateox" thickness oxide mat.occno=1 x.val=0.05

implant boron dose=9.5e11 energy=10 pearson

depo poly thick=0.2 divi=10

etch poly left p1.x=0.35
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
implant phosphor dose=3.0e13 energy=20 pearson
depo oxide thick=0.120 divisions=8
etch oxide dry thick=0.120
implant arsenic dose=5.0e15 energy=50 pearson
method fermi compress
diffuse time=1 temp=900 nitro press=1.0

13
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18

extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1

extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1

extract name="ldd sheet rho" sheet.res material="Silicon" \

mat.occno=1 x.val=0.3 region.occno=1

extract name="chan surf conc" surf.conc impurity="Net Doping" \

material="Silicon" mat.occno=1 x.val=0.45

extract start material="Polysilicon" mat.occno=1 \

bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias" \
curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)\
outfile="extract.dat"

extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49

structure mirror right

electrode name=gate x=0.5 y=0.1

electrode name=source x=0.1
electrode name=drain x=1.1
electrode name=substrate backside

structure outfile=mos1ex01_0.str

tonyplot mos1ex01_0.str -set mos1ex01_0.set

go atlas

# set material models

models cvt srh print

contact name=gate n.poly

interface qf=3e10

method newton
solve init

solve vdrain=0.1

log outf=mos1ex01_1.log master

solve vgate=0 vstep=0.25 vfinal=3.0 name=gate
save outf=mos1ex01_1.str

tonyplot mos1ex01_1.log -set mos1ex01_1_log.set

extract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \

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- abs(ave(v."drain"))/2.0)
extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
* (1.0/abs(ave(v."drain")))
extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain"))) \
- (1.0 / (max(abs(v."gate")) - ($"nvt")))

quit

TONYPLOT:

15
I-V CHARACTERISTICS:

CONCLUSIONS:
By the Id-Vgs characteristics we can easily verify that at what value of Vgs the mos will be
turn off or on wrt. the threshold voltage.Initially the Id remains constant after a certain value
it proportionally increases wrt gate bias voltage.

6.WRITE A SILVACO PROGRAM ON MOSFET AND Id-Vds

CHARACTERISTICS:
OBJECTIVES:
 To measure the value of input voltage at which the most starts conducting.
 Measuring channel length.
 Measuring on resistance(Ron).
 To measure the variation of drain current wrt gate voltage.

CODE:
go athena
#
line x loc=0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.5 spac=0.01
16
#
line y loc=0.00 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
#
init orientation=100 c.phos=1e14 space.mul=2

diffus time=30 temp=1000 dryo2 press=1.00 hcl=3

#
etch oxide thick=0.02
implant boron dose=8e12 energy=100 pears
diffus temp=950 time=100 weto2 hcl=3
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
#
diffus time=220 temp=1200 nitro press=1
#
diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
#
etch oxide all
diffus time=20 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
extract name="gateox" thickness oxide mat.occno=1 x.val=0.50

implant boron dose=9.5e11 energy=10 pearson

#
depo poly thick=0.2 divi=10
etch poly left p1.x=0.35
#
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
#
implant phosphor dose=3.0e13 energy=20 pearson
#
depo oxide thick=0.120 divisions=8
#
etch oxide dry thick=0.120
#
implant arsenic dose=5.0e15 energy=50 pearson
method fermi compress
diffuse time=1 temp=900 nitro press=1.0
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18

extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1

extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
extract start material="Polysilicon" mat.occno=1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45

17
extract done name="sheet cond v bias" curve(bias,1dn.conduct material="Silicon" mat.occno=1
region.occno=1) outfile="extract.dat"
extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1
extract name="ldd sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.3 region.occno=1
extract name="chan surf conc" surf.conc impurity="Net Doping" material="Silicon" mat.occno=1
x.val=0.45

structure mirror right

electrode name=gate x=0.5 y=0.1

electrode name=source x=0.1
electrode name=drain x=0.9
electrode name=substrate backside

structure outfile=mos1ex02_0.str
tonyplot -st mos1ex02_0.str -set mos1ex02_0.set

go atlas
contact name=gate n.poly
interface qf=3e10

models cvt srh print numcarr=2

method climit=1e-4 maxtrap=10
solve init
solve vgate=1.1 outf=solve_tmp1
solve vgate=2.2 outf=solve_tmp2
solve vgate=3.3 outf=solve_tmp3

load infile=solve_tmp1
log outf=mos1ex02_1.log
solve name=drain vdrain=0 vfinal=3.3 vstep=0.3
load infile=solve_tmp2
log outf=mos1ex02_2.log
solve name=drain vdrain=0 vfinal=3.3 vstep=0.3
load infile=solve_tmp3
log outf=mos1ex02_3.log
solve name=drain vdrain=0 vfinal=3.3 vstep=0.3
extract name="nidsmax" max(i."drain")
extract name="sat_slope" slope(minslope(curve(v."drain",i."drain")))

tonyplot -overlay -st mos1ex02_1.log mos1ex02_2.log mos1ex02_3.log -set mos1ex02_1.set

quit

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TONYPLOT:

I-V CHARACTERISTICS:

CONCLUSION:
We can conclude that for a certain value of Vth: Vds<=(Vgs-Vth)mos operates in triode
region, Vds>(Vgs-Vth)mos operates in saturation region.
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