APM3009NU

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 30V/50A,
RDS(ON)=7mΩ (typ.) @ VGS=10V
RDS(ON)=11mΩ (typ.) @ VGS=4.5V G D

• Super High Dense Cell Design S

• Reliable and Rugged Top View of TO-252

• Lead Free Available (RoHS Compliant)
D

Applications

• Power Management in Desktop Computer or G

DC/DC Converters

N-Channel MOSFET

Ordering and Marking Information

APM3009N Package Code

U : TO-252
Lead Free Code Operating Junction Temp. Range
Handling Code C : -55 to 150 ° C
Temp. Range Handling Code
Package Code TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device

APM3009N U : APM3009N XXXXX - Date Code

XXXXX

Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current TC=25°C 11 A
Mounted on Large Heat Sink
TC=25°C 100
IDP 300µs Pulse Drain Current Tested A
TC=100°C 75
TC=25°C 50*
ID Continuous Drain Current A
TC=100°C 30
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RθJC Thermal Resistance-Junction to Case 2.5 °C/W
2
Mounted on PCB of 1in Pad Area
TA=25°C 100
IDP 300µs Pulse Drain Current Tested A
TA=100°C 75
TA=25°C 14
ID Continuous Drain Current A
TA=100°C 9
TA=25°C 2.5
PD Maximum Power Dissipation W
TA=100°C 1
RθJA Thermal Resistance-Junction to Ambient 50 °C/W
Mounted on PCB of Minimum Footprint
TA=25°C 100
IDP 300µs Pulse Drain Current Tested A
TA=100°C 75
TA=25°C 11
ID Continuous Drain Current A
TA=100°C 7
TA=25°C 1.6
PD Maximum Power Dissipation W
TA=100°C 0.6
RθJA Thermal Resistance-Junction to Ambient 75 °C/W
Note:
* Current limited by bond wire.

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM3009NU
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed ID=11A, VDD=15V 30 mJ
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 1.5 2 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
a VGS=10V, IDS=35A 7 9
RDS(ON) Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=20A 11 15
Diode Characteristics
VSDa Diode Forward Voltage ISD=20A, VGS=0V 0.7 1.3 V
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.2 Ω
Ciss Input Capacitance 1710
VGS=0V,
Coss Output Capacitance VDS=25V, 465 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 300
td(ON) Turn-on Delay Time 10 15
Tr Turn-on Rise Time VDD=15V, RL=15Ω, 7 13
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω 35 50
Tf Turn-off Fall Time 10 20
b
Gate Charge Characteristics
Qg Total Gate Charge 40 52
VDS=15V, VGS=10V,
Qgs Gate-Source Charge 4.8 nC
IDS=35A
Qgd Gate-Drain Charge 8.4
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Typical Characteristics

Power Dissipation Drain Current

60 60

50 50

ID - Drain Current (A)

Ptot - Power (W)

40 40

30 30

20 20

10 10

o o
TA=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

100 1
it
im Duty = 0.5
)L
ID - Drain Current (A)

n
s(o
Rd 10ms
0.2
100ms
10
0.1
1s
0.1
0.05
DC
1
0.02

0.01 2
Mounted on 1in pad
o
o
Tc=25 C Single Pulse RθJA :50 C/W
0.1 0.01
0.1 1 10 80 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Typical Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

100 16
VGS=4,5,6,7,8,9,10V
90
14

RDS(ON) - On - Resistance (mΩ)

80
12
70 VGS=4.5V
ID - Drain Current (A)

60 10

50 8
VGS=10V
40
6
30 3V
4
20
2
10

0 0
0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Transfer Characteristics Gate Threshold Voltage

100 1.6
IDS =250µA
90
1.4
Normalized Threshold Vlotage

80
1.2
ID - Drain Current (A)

70

60 1.0

50 0.8
o
Tj=125 C
40
0.6
30 o
Tj=25 C Tj=-55 C
o

0.4
20

10 0.2

0 0.0
0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Typical Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 100
VGS = 10V
1.8
IDS = 35A
Normalized On Resistance

1.6

1.4 o

IS - Source Current (A)

10 Tj=150 C
o
1.2 Tj=25 C

1.0

0.8
1
0.6

0.4

0.2
o
RON@Tj=25 C: 7mΩ
0.0 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

3000 10
Frequency=1MHz VDS=15V
9
ID =35A
2500
8
VGS - Gate-source Voltage (V)

7
C - Capacitance (pF)

2000
Ciss 6

1500 5

4
1000
3

Coss 2
500
Crss 1

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Avalanche Test Circuit and Waveforms

V DS
L V DSX(SUS)
tp
DUT V DS

IA S
RG
V DD

V DD
tp IL
0.01 Ω EA S

tA V

Switching Time Test Circuit and Waveforms

V DS
RD
V DS
DUT 90%

V GS
RG
V DD

10%
tp V GS
t d (on) t r t d (off) t f

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Package Information

TO-252 (Reference JEDEC Registration TO-252)

E A
b2 C1
L2

D
H

L1
L

b C
e1
A1
D1

E1

Millimeters Inches
Dim
Min. Max. Min. Max.
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.035
b2 5.207 5.461 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
D1 5.2 REF 0.205 REF
E 6.35 6.73 0.250 0.265
E1 5.3 REF 0.209 REF
e1 3.96 5.18 0.156 0.204
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.02 0.025 0.040
L2 0.89 2.032 0.035 0.080

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
T L to T P
Ramp-up

TL
tL
Temperature

Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 °C to Peak
25

Time

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
- Temperature Max (Tsmax) 150°C 200°C
- Time (min to max) (ts) 60-120 seconds 60-180 seconds
Time maintained above:
183°C 217°C
- Temperature (T L)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classificatioon Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw
Rev. B.2 - Oct., 2005
APM3009NU

Classification Reflow Profiles(Cont.)

Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s

Package Thickness Volume mm 3 Volume mm 3
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness Volume mm 3 Volume mm 3 Volume mm 3
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.

Reliability Test Program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

Po P D
E
P1

F Bo
W

Ao D1 Ko

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Rev. B.2 - Oct., 2005
APM3009NU

Carrier Tape & Reel Dimensions(Cont.)

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 2.5± 0.5 16+ 0.3 8 ± 0.1 1.75± 0.1
-0.2 - 0.1
TO-252 F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

(mm)

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

TO- 252 16 13.3 2500

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 11 www.anpec.com.tw

Rev. B.2 - Oct., 2005