SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT

November 2013

SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT

General Description Features

Fairchild’s RUFD series of Insulated Gate Bipolar • 50 A, 600 V, TC = 100°C
Transistors (IGBTs) provide low conduction and switching • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
losses as well as short circuit ruggedness. The RUFD • Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
series is designed for applications such as motor control, • High Speed Switching
uninterrupted power supplies (UPS) and general inverters • High Input Impedance
where short circuit ruggedness is a required feature. • Short Circuit Rating

Applications
Motor Control, UPS, General Inverter.

TO-264
E
G C E

Absolute Maximum Ratings TC = 25C unless otherwise noted

Symbol Description Ratings Unit

VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage  20 V
Collector Current @ TC = 25C 80 A
IC
Collector Current @ TC = 100C 50 A
ICM (1) Pulsed Collector Current 150 A
Diode Continuous Forward Current @ TC = 25C 60 A
IF
Diode Continuous Forward Current @ TC = 100C 30 A
IFM Diode Maximum Forward Current 90 A
TSC Short Circuit Withstand Time @ TC = 100C 10 us
PD Maximum Power Dissipation @ TC = 25C 250 W
Maximum Power Dissipation @ TC = 100C 100 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for Soldering
TL 300 C
Purposes, 1/8” from Case for 5 Seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 C/W
RJC(DIODE) Thermal Resistance, Junction-to-Case -- 1.0 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 25 C/W

©1999 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT T C = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 600 -- -- V
BVCES/ Temperature Coefficient of Breakdown
VGE = 0 V, IC = 1 mA -- 0.6 -- V/C
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 100 nA

On Characteristics
VGE(th) G-E Threshold Voltage Ic = 50 mA, VCE = VGE 5.0 6.0 8.5 V
Collector to Emitter IC = 50 A, VGE = 15 V -- 2.2 2.8 V
VCE(sat)
Saturation Voltage IC = 80 A, VGE = 15 V -- 2.5 -- V

Dynamic Characteristics
Cies Input Capacitance -- 3311 -- pF
VCE=30 V, VGE = 0 V,
Coes Output Capacitance -- 399 -- pF
f = 1 MHz
Cres Reverse Transfer Capacitance -- 139 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 26 -- ns
tr Rise Time -- 89 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 50 A, -- 66 100 ns
tf Fall Time RG = 5.9 , VGE = 15 V, -- 118 200 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25C -- 1.68 -- mJ
Eoff Turn-Off Switching Loss -- 1.03 -- mJ
Ets Total Switching Loss -- 2.71 3.8 mJ
td(on) Turn-On Delay Time -- 28 -- ns
tr Rise Time -- 91 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 50 A, -- 68 110 ns
tf Fall Time RG = 5.9 , VGE = 15 V, -- 261 400 ns
Eon Turn-On Switching Loss Inductive Load, TC = 125C -- 1.7 -- mJ
Eoff Turn-Off Switching Loss -- 2.31 -- mJ
Ets Total Switching Loss -- 4.01 5.62 mJ
VCC = 300 V, VGE = 15 V
Tsc Short Circuit Withstand Time 10 -- -- us
@ TC= 100C
Qg Total Gate Charge -- 145 210 nC
VCE = 300 V, IC = 50 A,
Qge Gate-Emitter Charge -- 25 35 nC
VGE = 15 V
Qgc Gate-Collector Charge -- 70 100 nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH

Electrical Characteristics of DIODE T C = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

TC = 25C -- 1.9 2.8
VFM Diode Forward Voltage IF = 30 A V
TC = 100C -- 1.8 --
TC = 25C -- 70 100
trr Diode Reverse Recovery Time ns
TC = 100C -- 140 --
Diode Peak Reverse Recovery IF= 30 A, TC = 25C -- 6 7.8
Irr A
Current diF/dt = 200 A/us TC = 100C -- 8 --
TC = 25C -- 200 360
Qrr Diode Reverse Recovery Charge nC
TC = 100C -- 580 --

©1999 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
140
Common Emitter 20V 15V
140 Common Emitter
TC = 25℃
120 VGE = 15V
120 TC = 25℃ ━━

Collector Current, I C [A]

TC = 125℃ ------
Collector Current, I C [A]

12V 100
100

80
80

60
60
VGE = 10V

40 40

20 20

0 0
0 2 4 6 8 1 10

Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

5 60
Common Emitter VCC = 300V
VGE = 15V Load Current : peak of square wave
[V]

50
CE

4
100A
Collector - Emitter Voltage, V

40
Load Current [A]

50A 30

2 IC = 30A
20

1
10 Duty cycle : 50%
TC = 100℃
Power Dissipation = 70W
0 0
-50 0 50 100 150 1 10 100 1000

Case Temperature, T C [℃] Frequency [KHz]

Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
T C = 25℃ TC = 125℃
[V]
[V]

16 16
CE
CE

Collector - Emitter Voltage, V

Collector - Emitter Voltage, V

12 12

8 8

100A
100A
4 4 50A
50A
IC = 30A
IC = 30A
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©1999 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
7000 1000
Common Emitter Common Emitter
VGE = 0V, f = 1MHz VCC = 300V, VGE = ± 15V
6000 TC = 25℃ IC = 50A
TC = 25℃ ━━
5000 TC = 125℃ ------ Ton
Capacitance [pF]

Cies

Switching Time [ns]

4000
Tr

3000

Coes
2000
100
Cres
1000

0
1 10 10 100

Collector - Emitter Voltage, VCE [V] Gate Resistance, RG [ ]

Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.

Gate Resistance

10000
Common Emitter Common Emitter
VCC = 300V, VGE = ± 15V VCC = 300V, VGE = ± 15V
IC = 50A IC = 50A
1000 T C = 25℃ ━━ TC = 25℃ ━━ Eon
T C = 125℃ ------ Toff TC = 125℃ ------
Switching Time [ns]

Switching Loss [uJ]

Toff

Eoff
Tf

Eoff

Tf 1000
100

10 100 10 100

Gate Resistance, RG [ ] Gate Resistance, RG [ ]

Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance

1000 1000
Common Emitter
VGE = ± 15V, RG = 5.9
T C = 25℃ ━━
T C = 125℃ ------
Ton
Switching Time [ns]

Toff
Switching Time [ns]

Tr
Tf
100
Toff
100
Tf

Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125℃ ------
10
10 20 40 60 80 100 10 20 40 60 80 100

Collector Current, IC [A] Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current

©1999 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
10000 15
Common Emitter Common Emitter
VGE = ± 15V, RG = 5.9 RL = 6
TC = 25℃ ━━ TC = 25℃
12

Gate - Emitter Voltage, VGE [ V ]

TC = 125℃ ------ Eoff VCC = 100 V 300 V
Switching Loss [uJ]

Eon Eoff
9 200 V

1000

100 0
10 20 40 60 80 100 0 30 60 90 120 150 180

Collector Current, IC [A] Gate Charge, Qg [ nC ]

Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics

500

IC MAX. (Pulsed)
100 50us 100
IC MAX. (Continuous)
Collector Current, I C [A]
Collector Current, I C [A]

100us

1㎳

10 DC Operation

10

Single Nonrepetitive
1 Pulse TC = 25℃
Curves must be derated
linearly with increase
Safe Operating Area
in temperature
VGE = 20V, TC = 100℃
0.1 1
0.3 1 10 100 1000 1 10 100 1000

Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

1
Thermal Response, Zthjc [℃/W]

0.5

0.2
0.1
0.1
0.05

0.02 Pdm
0.01 0.01 t1

t2
single pulse Duty factor D = t1 / t2
Peak Tj = Pdm  Zthjc + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©1999 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
100
TC = 25℃ ━━
VR = 200V
TC = 100℃ ------
100 IF = 30A
TC = 25℃ ━━

[A]
TC = 100℃ ------
Forward Current, I F [A]

rr
Reverse Recovery Current, I
10
10

1 1
0 1 2 3 4 100 1000

Forward Voltage Drop, VFM [V] di/dt [A/us]

Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current

1400 200
VR = 200V VR = 200V
IF = 30A 180 IF = 30A
[nC]

1200
TC = 25℃ ━━ TC = 25℃ ━━
[ns]

TC = 100℃ ------ 160 TC = 100℃ ------

rr
Stored Recovery Charge, Q

1000
rr

140
Reverce Recovery Time, t

800 120

600 100

80
400
60
200
40

0 20
100 1000 100 1000

di/dt [A/us] di/dt [A/us]

Fig 20. Stored Charge Fig 21. Reverse Recovery Time

©1999 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Mechanical Dimensions

Figure 22. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA

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©1999 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

SGL50N60RUFD Rev. C1
 SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
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Rev. I66

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SGL50N60RUFD Rev. C1
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