IRF744, SiHF744

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 450 Available
• Repetitive Avalanche Rated
RDS(on) (Ω) VGS = 10 V 0.63 RoHS*
• Fast Switching COMPLIANT
Qg (Max.) (nC) 80
• Ease of Paralleling
Qgs (nC) 12
• Simple Drive Requirements
Qgd (nC) 41
• Lead (Pb)-free Available
Configuration Single
DESCRIPTION
D
TO-220 Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
G
effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
S
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220
IRF744PbF
Lead (Pb)-free
SiHF744-E3
IRF744
SnPb
SiHF744

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 450
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 8.8
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 5.6 A
Pulsed Drain Currenta IDM 35
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 540 mJ
Repetitive Avalanche Currenta IAR 8.8 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 12 mH, RG = 25 Ω IAS = 8.8 A (see fig. 12).
c. ISD ≤ 8.8 A, dV/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91056 www.vishay.com

S-83029-Rev. A, 19-Jan-09 1
IRF744, SiHF744
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 450 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA
VDS = 450 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS µA
VDS = 360 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.3 Ab - - 0.63 Ω
Forward Transconductance gfs VDS = 50 V, ID = 5.3 Ab 4.5 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V - 1400 -
Output Capacitance Coss VDS = 25 V - 370 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 140 -
Total Gate Charge Qg - - 80
ID = 8.8 A, VDS = 360 V,
Gate-Source Charge Qgs VGS = 10 V - - 12 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 41
Turn-On Delay Time td(on) - 8.7 -
Rise Time tr VDD = 225 V, ID = 8.8 A - 28 -
ns
Turn-Off Delay Time td(off) RG = 9.1 Ω, RD = 25 Ω, see fig. 10b - 58 -
Fall Time tf - 27 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 8.8
showing the
A
integral reverse G

Pulsed Diode Forward Currenta ISM p - n junction diode S

- - 35

Body Diode Voltage VSD TJ = 25 °C, IS = 8.8 A, VGS = 0 Vb - - 2.0 V

Body Diode Reverse Recovery Time trr - 490 740 ns
TJ = 25 °C, IF = 8.8 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 3.2 4.8 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91056

2 S-83029-Rev. A, 19-Jan-09
 IRF744, SiHF744
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

VGS
Top 15 V
10 V
8.0 V

ID, Drain Current (A)

ID, Drain Current (A)

7.0 V
6.0 V 101 150 °C
5.5 V
101 5.0 V 25 °C
Bottom 4.5 V

4.5 V

100
20 µs Pulse Width 20 µs Pulse Width
TC = 25 °C VDS = 50 V
100
100 101 4 5 6 7 8 9 10

91056_01 VDS, Drain-to-Source Voltage (V) 91056_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

3.5
VGS ID = 8.8 A
Top 15 V VGS = 10 V
3.0
10 V
8.0 V
ID, Drain Current (A)

7.0 V 2.5
101
(Normalized)

6.0 V
5.5 V 2.0
5.0 V 4.5 V
Bottom 4.5 V 1.5

1.0

0.5
20 µs Pulse Width
TC = 150 °C
100 0.0
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91056_02 VDS, Drain-to-Source Voltage (V) 91056_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91056 www.vishay.com

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IRF744, SiHF744
Vishay Siliconix

3000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted

ISD, Reverse Drain Current (A)

2500 Crss = Cgd
Coss = Cds + Cgd 101
Capacitance (pF)

2000 150 °C
Ciss
1500
25 °C
100
1000 Coss

500

Crss VGS = 0 V
0 10-1
100 101 0.4 0.6 0.8 1.0 1.2 1.4 1.6

91056_05 VDS, Drain-to-Source Voltage (V) 91056_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 8.8 A Operation in this area limited
5
VGS, Gate-to-Source Voltage (V)

by RDS(on)
VDS = 360 V 2
16
102
ID, Drain Current (A)

VDS = 225 V
5

12 VDS = 90 V 10 µs
2

10
100 µs
5
8
2 1 ms
1
4 10 ms
5
TC = 25 °C
For test circuit 2 TJ = 150 °C
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5
0 20 40 60 80 1 10 102 103

91056_06 QG, Total Gate Charge (nC) 91056_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91056

4 S-83029-Rev. A, 19-Jan-09
 IRF744, SiHF744
Vishay Siliconix

RD
VDS

VGS
D.U.T.
RG
10 +
- VDD

10 V
8
Pulse width ≤ 1 µs
ID, Drain Current (A)

Duty factor ≤ 0.1 %

6
Fig. 10a - Switching Time Test Circuit

4
VDS
2 90 %

0
25 50 75 100 125 150
10 %
91056_09 TC, Case Temperature (°C) VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
D = 0.5
PDM
0.2
0.1 0.1 t1
0.05 t2
0.02 Notes:
0.01 Single Pulse 1. Duty Factor, D = t1/t2
(Thermal Response) 2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91056_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

L VDS
VDS
Vary tp to obtain tp
required IAS VDD

RG D.U.T +
V DD VDS
-
IAS
10 V
tp 0.01 Ω IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91056 www.vishay.com

S-83029-Rev. A, 19-Jan-09 5
IRF744, SiHF744
Vishay Siliconix

1200
ID
Top

EAS, Single Pulse Energy (mJ)

3.9 A
1000 5.6 A
Bottom 8.8 A
800

600

400

200

VDD = 50 V
0
25 50 75 100 125 150

91056_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

50 kΩ
QG
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91056

6 S-83029-Rev. A, 19-Jan-09
 IRF744, SiHF744
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91056.

Document Number: 91056 www.vishay.com

S-83029-Rev. A, 19-Jan-09 7
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1