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InductionHeatingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N110R3
Datasheet
IndustrialPowerControl
Free Datasheet http://www.Datasheet4U.com
IHW30N110R3
ReverseconductingIGBTwithmonolithicbodydiode

Features: C
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•Verytightparameterdistribution
•Highruggedness,temperaturestablebehavior
•LowVCEsat G
•Easyparallelswitchingcapabilityduetopositivetemperature E
coefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
G
•Microwaveoven C
E
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IHW30N110R3 1100V 30A 1.55V 175°C H30N110R3 PG-TO247-3
2 Rev.1.3,2013-02-12
IHW30N110R3
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3 Rev.1.3,2013-02-12
IHW30N110R3
Maximumratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1100 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 60.0 A
TC=100°C 30.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A
TurnoffsafeoperatingareaVCE≤1100V,Tvj≤175°C - 90.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 60.0 A
TC=100°C 30.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±25
PowerdissipationTC=25°C 333.0
Ptot W
PowerdissipationTC=100°C 166.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient
4 Rev.1.3,2013-02-12
IHW30N110R3
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1100 - - V
VGE=15.0V,IC=30.0A
Tvj=25°C - 1.55 1.75
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.85 -
Tvj=175°C - 2.00 -
VGE=0V,IF=30.0A
Tvj=25°C - 1.35 1.55
Diode forward voltage VF V
Tvj=125°C - 1.38 -
Tvj=175°C - 1.41 -
Gate-emitter threshold voltage VGE(th) IC=0.70mA,VCE=VGE 5.1 5.8 6.4 V
VCE=1100V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 5.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 15.0 - S
Integrated gate resistor rG none Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1460 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 55 - pF
Reverse transfer capacitance Cres - 45 -
VCC=880V,IC=30.0A,
Gate charge QG - 180.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) Tvj=25°C, - 350 - ns
Fall time tf VCC=600V,IC=30.0A, - 16 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff rG=15.0Ω,Lσ=80nH, - 1.15 - mJ
Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5 Rev.1.3,2013-02-12
IHW30N110R3
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) Tvj=175°C, - 410 - ns
Fall time tf VCC=600V,IC=30.0A, - 60 - ns
VGE=0.0/15.0V,
Turn-off energy Eoff rG=15.0Ω,Lσ=80nH, - 1.80 - mJ
Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6 Rev.1.3,2013-02-12
IHW30N110R3
100 100
90
80
IC,COLLECTORCURRENT[A]
70
10 tp=1µs
TC=80°
60 10µs
TC=110°
20µs
50
50µs
40 500µs
1 5ms
30
DC
20
10
0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=15Ω)
350 60
300
Ptot,POWERDISSIPATION[W]
250
40
200
150
20
100
50
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)
7 Rev.1.3,2013-02-12
IHW30N110R3
90 90
80 VGE=20V 80 VGE=20V
17V 17V
70 70
15V 15V
60 13V 60 13V
11V 11V
50 50
9V 9V
40 7V 40 7V
5V 5V
30 30
20 20
10 10
0 0
0 1 2 3 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)
90
Tj=25°C IC=15A
Tj=175°C IC=30A
80
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
IC=60A
3
70
60
50
40
2
30
20
10
0 1
4 6 8 10 12 14 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)
8 Rev.1.3,2013-02-12
IHW30N110R3
td(off) td(off)
tf tf
1000 1000
t,SWITCHINGTIMES[ns]
100 100
10 10
10 20 30 40 50 60 10 20 30 40 50
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=15Ω,testcircuitinFig.E) IC=30A,testcircuitinFig.E)
8
td(off) typ.
1000 tf
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
7
6
100
4
10
1 2
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=30A, (IC=0.7mA)
rG=15Ω,testcircuitinFig.E)
9 Rev.1.3,2013-02-12
IHW30N110R3
4 3
Eoff Eoff
E,SWITCHINGENERGYLOSSES[mJ]
3
0 0
0 15 30 45 60 10 20 30 40 50
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=15Ω,testcircuitinFig.E) test circuit in Fig. E)
2 2.2
Eoff Eoff
2.0
1.8
1.6
1.4
0 1.2
25 50 75 100 125 150 175 300 400 500 600 700 800 900
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=15/0V,IC=30A, (ind.load,Tj=175°C,VGE=15/0V,IC=30A,
rG=15Ω,testcircuitinFig.E) rG=15Ω,testcircuitinFig.E)
10 Rev.1.3,2013-02-12
IHW30N110R3
16
220V
880V
14
VGE,GATE-EMITTERVOLTAGE[V]
12 1000
Ciss
Coss
C,CAPACITANCE[pF]
Crss
10
6 100
0 10
0 40 80 120 160 200 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=30A) collector-emittervoltage
(VGE=0V,f=1MHz)
1 1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse
0.01 0.01
i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 4.5E-3 0.1058 0.152 0.1827 ri[K/W]: 4.5E-3 0.1058 0.152 0.1827
τi[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178 τi[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178
0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance Figure 20. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)
11 Rev.1.3,2013-02-12
IHW30N110R3
60 2
Tj=25°C IC=15A
Tj=175°C IC=30A
IC=60A
50
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
40
30
20
10
0 1
0 1 2 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction Figure 22. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature
12 Rev.1.3,2013-02-12
IHW30N110R3
PG-TO247-3
13 Rev.1.3,2013-02-12
IHW30N110R3
a b
a b
14 Rev.1.3,2013-02-12
IHW30N110R3
RevisionHistory
IHW30N110R3
Revision:2013-02-12,Rev.1.3
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-12-01 -
1.2 2011-01-21 Package drawing Rev. 05
1.3 2013-02-12 Layout change
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Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2013InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
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endangered.
15 Rev.1.3,2013-02-12

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