RESISTANCE

Q2. A JFET is similar in operation to …………. valve

1. diode
2. pentode
3. triode
4. tetrode
Answer : 2
Q3. A JFET is also called …………… transistor
1. unipolar
2. bipolar
3. unijunction
4. none of the above
Answer : 1
Q4. A JFET is a ………… driven device
1. current
2. voltage
3. both current and voltage
4. none of the above
Answer : 2
Q5. The gate of a JFET is ………… biased
1. reverse
2. forward
3. reverse as well as forward
4. none of the above
Answer : 1
Q6. The input impedance of a JFET is …………. that of an ordinary
transistor
1. equal to
2. less than
3. more than
4. none of the above
Answer : 3
Q7. In a p-channel JFET, the charge carriers are …………..
1. electrons
2. holes
3. both electrons and holes
4. none of the above
Answer : 2
Q8. When drain voltage equals the pinch-off-voltage, then drain
current …………. with the increase in drain voltage
1. decreases
2. increases
3. remains constant
4. none of the above
Answer : 3
Q9. If the reverse bias on the gate of a JFET is increased, then width
of the conducting channel …………..
1. is decreased
2. is increased
3. remains the same
4. none of the above
Answer : 1
Q10. A MOSFET has …………… terminals
1. two
2. five
3. four
4. three
Answer : 4
Q11. A MOSFET can be operated with ……………..
1. negative gate voltage only
2. positive gate voltage only
3. positive as well as negative gate voltage
4. none of the above
Answer : 3
Q12. A JFET has ……….. power gain
1. small
2. very high
3. very small
4. none of the above
Answer : 2
Q13. The input control parameter of a JFET is ……………
1. gate voltage
2. source voltage
3. drain voltage
4. gate current
Answer : 1
Q14. A common base configuration of a pnp transistor is analogous
to ………… of a JFET
1. common source configuration
 2. common drain configuration
3. common gate configuration
4. none of the above
Answer : 3
Q15. A JFET has high input impedance because …………
1. it is made of semiconductor material
2. input is reverse biased
3. of impurity atoms
4. none of the above
Answer : 2
Q16. In a JFET, when drain voltage is equal to pinch-off voltage, the
depletion layers ………
1. almost touch each other
2. have large gap
3. have moderate gap
4. none of the above
Answer : 1
Q17. In a JFET, IDSS is known as …………..
1. drain to source current
2. drain to source current with gate shorted
3. drain to source current with gate open
4. none of the above
Answer : 2
Q18. The two important advantages of a JFET are …………..
1. high input impedance and square-law property
2. inexpensive and high output impedance
3. low input impedance and high output impedance
4. none of the above
Answer : 1
Q19. …………. has the lowest noise-level
1. triode
2. ordinary trnsistor
3. tetrode
4. JFET
Answer : 4
Q20. A MOSFET is sometimes called ………. JFET
1. many gate
2. open gate
3. insulated gate
4. shorted gate
Answer : 3
Q21. Which of the following devices has the highest input
impedance?
1. JFET
2. MOSFET
3. Crystal diode
4. ordinary transistor
Answer : 2
Q22. A MOSFET uses the electric field of a ………. to control the
channel current
1. capacitor
2. battery
3. generator
4. none of the above
Answer : 1
Q23. The pinch-off voltage in a JFET is analogous to ………. voltage in
a vacuum tube
1. anode
2. cathode
3. grid cut off
4. none of the above
Answer : 3
Q24. This question will be available soon

Q25. In class A operation, the input circuit of a JFET is ………. biased

1. forward
2. reverse
3. not
4. none of the above
Answer : 2
Q26. If the gate of a JFET is made less negative, the width of the
conducting channel……….
1. remains the same
2. is decreased
3. is increased
4. none of the above
Answer : 3
Q27. The pinch-off voltage of a JFET is about ……….
1. 5 V
2. 0.6 V
3. 15 V
 4. 25 V
Answer : 1
Q28. The input impedance of a MOSFET is of the order of ………..
1. Ω
2. a few hundred Ω
3. kΩ
4. several MΩ
Answer : 4
Q29. The gate voltage in a JFET at which drain current becomes
zero is called ……….. voltage
1. saturation
2. pinch-off
3. active
4. cut-off
Answer : 2
Q30. This question will be available soon

Q31. In a FET, there are ……….. pn junctions at the sides

1. three
2. four
3. five
4. two
Answer : 4
Q32. The transconductance of a JFET ranges from ……………..
1. 100 to 500 mA/V
2. 500 to 1000 mA/V
3. 0.5 to 30 mA/V
4. above 1000 mA/V
Answer : 3
Q33. The source terminal of a JEFT corresponds to ………….. of a
vacuum tube
1. plate
2. cathode
3. grid
4. none of the above
Answer : 2
Q34. The output characteristics of a JFET closely resemble the
output characteristics of a ………. valve
1. pentode
2. tetrode
 3. triode
4. diode
Answer : 1
Q35. If the cross-sectional area of the channel in n-channel JEFT
increases, the drain current ……….
1. is increased
2. is decreased
3. remains the same
4. none of the above
Answer : 1
Q36. The channel of a JFET is between the …………….
1. gate and drain
2. drain and source
3. gate and source
4. input and output
Answer : 2
Q37. For VGS = 0 V, the drain current becomes constant when
VDS exceeds ………
1. cut off
2. VDD
3. VP
4. o V
Answer : 3
Q38. A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off
voltage Vp is ……..
1. +4 V
2. -4 V
3. dependent on VGS
4. data insufficient
Answer : 1
Q39. The constant-current region of a JFET lies between
1. cut off and saturation
2. cut off and pinch-off
3. o and IDSS
4. pinch-off and breakdown
Answer : 4
Q40. At cut-off, the JFET channel is ……….
1. at its widest point
2. completely closed by the depletion region
3. extremely narrow
4. reverse baised
Answer : 2
Q41. A MOSFET differs from a JFET mainly because ………………
1. of power rating
2. the MOSFET has two gates
3. the JFET has a pn junction
4. none of the above
Answer : 3
Q42. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet
specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain
current is …………
1. 20 mA
2. 0 mA
3. 40 mA
4. 10 mA
Answer : 1
Q43. A n-channel D-MOSFET with a positive VGS is operating in
…………
1. the depletion-mode
2. the enhancement-mode
3. cut off
4. saturation
Answer : 2
Q44. A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the
drain current is ……….
1. 0 mA
2. ID(on)
3. maximum
4. IDSS
Answer : 1
Q45. In a common-source JFET amplifier, the output voltage is
…………………
1. 180o out of phase with the input
2. in phase with the input
3. 90o out of phase with the input
4. taken at the source
Answer : 1
Q46. In a certain common-source D-MOSFET amplifier, Vds =3.2 V
r.m. and Vgs = 280 mV r.m.s. The voltage gain is …………
1. 1
2. 11.4
3. 8.75
 4. 3.2
Answer : 2
Q47. In a certain CS JFET amplifier, RD= 1kΩ , RS= 560 Ω , VDD=10V
and gm= 4500 μS. If the source resistor is completely bypassed, the
voltage gain is …………
1. 450
2. 45
3. 2.52
4. 4.5
Answer : 4
Q48. A certain common-source JFET has a voltage gain of 10. If the
source bypass capacitor is removed, ……………….
1. the voltage gain will increase
2. the transconductance will increase
3. the voltage gain will decrease
4. the Q-point will shift
Answer : 3
Q49. A CS JFET amplifier has a load resistance of 10 kΩ , RD= 820Ω .
If gm= 5mS and Vin= 500 mV, the output signal voltage is ………..
1. 2.05 V
2. 25 V
3. 0.5 V
4. 1.89 V
Answer : 4
Q50. If load resistance in the above question (Q.49) is removed, the
output voltage will …………
1. increase
2. decrease
3. stay the same
4. be zero
Answer : 1
Q.51. When not in use, MOSFET pins are kept at the same potential
through the use of …………
1. shipping foil
2. nonconductive foam
3. conductive foam
4. a wrist strap
Answer: 3
Q.52. D-MOSFETs are sometimes used in series to construct a
cascode high-frequency amplifier to overcome the loss of …………..
1. low output impedance
 2. capacitive reactance
3. high input impedance
4. inductive reactance
Answer: 3
Q.53. A “U” shaped, opposite-polarity material built near a JFET-
channel center is called the ……….
1. gate
2. block
3. drain
4. heat sink
Answer: 1
Q.54. When testing an n-channel D-MOSFET, resistance G to D = ,
resistance G to S = , resistance D to SS = and 500 , depending
on the polarity of the ohmmeter, and resistance D to S = 500 .
What is wrong?
1. short D to S
2. open G to D
3. open D to SS
4. nothing
Answer: 4
Q.55. In the constant-current region, how will the IDS change in an n-
channel JFET?
1. As VGS decreases ID decreases.
2. As VGS increases ID increases
3. As VGS decreases ID remains constant.
4. As VGS increases ID remains constant.
Answer: 1
Q.56. IDSS can be defined as ………
1. the minimum possible drain current
2. the maximum possible current with VGS held at –4 V
3. the maximum possible current with VGS held at 0 V
4. the maximum drain current with the source shorted
Answer: 3
Q.57. The input impedance of a common-gate configured JFET is
…………
1. very low
2. low
3. high
4. very high
Answer: 1
Q.58. A very simple bias for a D-MOSFET is called ……..
1. self biasing
2. gate biasing
3. zero biasing
4. voltage-divider biasing
Answer: 3
Q.59. With the E-MOSFET, when gate input voltage is zero, drain
current is …..
1. at saturation
2. zero
3. IDSS
4. widening the channel
Answer: 2
Q.60. With a 30-volt VDD, and an 8-kilohm drain resistor, what is the
E-MOSFET Q point voltage, with ID = 3 mA?
1. 6 V
2. 10 V
3. 24 V
4. 30 V
Answer: 1
Q.61. When an input signal reduces the channel size, the process is
called …….
1. enhancement
2. substrate connecting
3. gate charge
4. depletion
Answer: 4
Q.62. Which JFET configuration would connect a high-resistance
signal source to a low-resistance load ?
1. source follower
2. common-source
3. common-drain
4. common-gate
Answer: 1
Q.63. When VGS = 0 V, a JFET is……….
1. saturated
2. an analog device
3. an open switch
4. an open switch
Answer: 1
Q.64. The electrons flow through a p-channel JFET from ……….. to
…………..
1. from source to drain
2. from source to gate
3. from drain to gate
4. from drain to source
Answer: 4
Q.65. When applied input voltage varies the resistance of a channel,
the result is called…………..
1. saturization
2. polarization
3. cutoff
4. field effect
Answer: 4
Q.66. When is a vertical channel E-MOSFET used?
1. for high frequencies
2. for high voltages
3. for high currents
4. for high resistances
Answer: 3
Q.67. When the JFET is no longer able to control the current, this
point is called the …………
1. breakdown region
2. depletion region
3. saturation point
4. pinch-off region
Answer: 1
Q.68. With a JFET, a ratio of output current change against an input
voltage change is called as ………..
1. transconductance
2. siemens
3. resistivity
4. gain
Answer: 1
Q.69. Which type of JFET bias requires a negative supply voltage?
1. feedback
2. source
3. gate
4. voltage divider
Answer: 3
Q.70. How will a D-MOSFET input impedance change with signal
frequency?
1. As frequency increases input impedance increases.
2. As frequency increases input impedance is constant.’
3. As frequency decreases input impedance increases.
4. As frequency decreases input impedance is constant.
Answer: 3
Q.71. The type of bias most often used with E-MOSFET circuits
is………….
1. constant current
2. drain-feedback
3. voltage-divider
4. zero biasing
Answer: 2
Q.72. The transconductance curve of a JFET is a graph of …………… vs
……….
1. IS versus VDS
2. IC versus VCE
3. ID versus VGS
4. ID × RDS
Answer: 3
Q.73. The common-source JFET amplifier has ………..
1. a very high input impedance and a relatively low voltage gain
2. a high input impedance and a very high voltage gain
3. a high input impedance and a voltage gain less than 1
4. no voltage gain
Answer: 1
Q.74. The overall input capacitance of a dual-gate D-MOSFET is
lower because the devices are usually connected ………..
1. in parallel
2. with separate insulation
3. with separate inputs
4. in series
Answer: 4
Q.75. Which component is considered to be an “OFF” devic.
1. transistor
2. JFET
3. D-MOSFET
4. E-MOSFET
Answer: 4
Q.76. In an n-channel JFET, what will happen at the pinch-off
voltage?
1. the value of VDS at which further increases in VDS will cause no
further increase in ID
2. the value of VGS at which further decreases in VGS will cause no
further increases in ID
3. the value of VDG at which further decreases in VDG will cause no
further increases in ID
4. the value of VDS at which further increases in VGS will cause no
further increases in ID
Answer: 1