ESD 502 Analog CMOS VLSI Design

Test 2 (Marks: 25)

September 10, 2018, Monday, 6 pm.

Do all the work in the answerbook. Write the final answers in the question
paper. 3V

1. Find the drain voltage (VD) and the drain current (ID) in the circuit of Fig. 1. RD 2 k
Vt = 0.5 V, nCox(W/L) = 20 mA/V2,  = 0. (Is the MOSFET in VD
saturation?). (6)
2V
VD = __1.07__ V ID = __0.97__ mA
RS 1 k
2. In Fig. 2, the transistors have nCox = 0.4 mA/V2, Vt = 0.5 V,  = 0, Figure 1
(W/L)1 = 10, and (W/L)2 = 2.5. (12)

(a) If VIN = 0.6 V, calculate the small-signal voltage gain.

vo/vin = __-2__ 4V

(b) At what input voltage is M1 driven 0.1 V into the triode region (i.e. VO = VIN – M2
Vt – 0.1)? Find the drain currents under this condition, in both M1 and M2, from
their drain current equations. VO
VIN M1
VIN = __1.703__ V ID1 = __2.87__ mA ID2 = __2.87__ mA

(c) What is the small-signal voltage gain under the conditions of part (b)?
Figure 2
vo/vin = __-1.58__

3. For the MOSFETs in Fig. 3, assume = 0, that all three are in saturation, and they VDD
all have equal gm and ro values. (7)
vG3 M3
(a) Derive expressions for the small-signal voltage gain, and the output
resistance. (10)

( ) vIN M2
vo/vin =
( ) vo
M1
( )
Rout = Figure 3
( )

(b) If gm = 2 mA/V, and ro = 20 k, determine numerical values of the above two quantities.

vo/vin = __0.96__ Rout = __250__ 