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tion, the main design challenges of the AFE are due to the
following.
1) System Design Constraints of the Sensor Nodes:
This includes an optimum number of amplification
stages, power consumption, filter specifications, linear-
ity, CMRR, and PSRR. In recent studies, the application
of wireless power transfer in WBSNs demands a very
low peak power consumption of the entire SoC [5]–[8].
A voltage regulator (linear or switch capacitor) is often
employed as a part of PMU to mitigate the supply volt-
age fluctuations owing to unreliable and unpredictable Fig. 3. Schematic of widely used capacitively coupled neural amplifier.
nature of the harvested energy. However, a finite amount
of ripple is still present in the supply voltage due to it extremely challenging to meet the area and noise
the lack of a bypass off-chip capacitor [5]. Moreover, specifications simultaneously.
the postamplification signal processing in the digital In order to address the above-mentioned challenges,
domain [9], [10] injects switching noise into the AFE we present a fully integrated AFE for the WBSNs and
that appears as a common-mode supply and substrate implantable SoCs, which follows a design methodology
noise. The interference from 50/60-Hz power lines also and optimization to fulfill the requirements posed by a
appear as a common-mode noise. Therefore, the AFE number of design parameters. The rest of this paper is
must have a high PSRR and CMRR, while limiting its organized as follows: Section II describes the perfor-
power consumption to less than 10 μW. mance analysis of the recording amplifier channel and
2) The Nature of Biopotential Signals: These signals are prior work. Section III presents the system architecture.
characterized as a low-frequency and low-amplitude Section IV details the circuit blocks. The chip measure-
signals [11]. The amplitude of such signals range from ment results and biological data from the in vivo animal
tens of microvolts to a few millivolts and their frequency and ex vivo human studies are presented in Section V.
spectrum spans from sub-1 Hz to a few kilohertz. Conclusions are drawn in Section VI.
To ensure a clean signal acquisition, the AFE amplifier
must have a sufficiently low input-referred noise (IRN) II. P ERFORMANCE A NALYSIS AND P RIOR A RT
per unit bandwidth. Since the low frequencies are of There are several biosensing amplifiers that have been
interest, the flicker or 1/ f noise of MOS transis- reported in [5], [9], and [13]–[31]. As depicted in Fig. 3, most
tors is an immediate concern. In order to accommo- of these architectures are capacitively coupled to the recording
date the upper end of the amplitude range (typically electrodes in order to reject the dc offset and to accommodate
1–5 mV), a sufficient dynamic range of the amplifier the rail-to-rail input common-mode range. The amplifier is
is also required. configured to provide a bandpass frequency response, where
3) Reconfigurable AFE: In future, the sensor nodes in a the high-pass (lower) and low-pass (upper) cutoff frequencies
WBAN will capture the various biopotential signals, are approximately given by the relation: fHP = 1/2π R f C f
with different amplitudes and bandwidths, simultane- and f LP = G m /2π A M C L (G m is the transconductance of
ously from the different parts of a human body. Accord- the operation transconductance amplifier (OTA), A M is the
ingly, a single AFE with reconfigurable parameters amplifier’s mid-band gain, and C L is the load capacitance),
settings, such as gain, bandwidth, bias current, and respectively. The mid-band closed-loop gain A M of the ampli-
sampling rate, is highly desirable. Also, the dependence fier is set by the ratio of input capacitor Cs to feedback
of peak signal amplitude on the type of electrode used capacitor C f ( A M = C S /C f ). The capacitively coupled archi-
and interface environment necessitates a reconfigurable tectures are implemented in both single-stage [13]–[22] and
gain stage. The amplifier linearity at very low bias multistage configurations [5], [23]–[31]. The noise efficiency
current is another important design parameter for the factor (NEF) is often used to compare these works among each
ultralow power AFE. other. The NEF is mainly focused on the tradeoff between IRN
4) Sensor Interface Between the AFE and Electrodes: The and current consumption and is expressed as
electrode–tissue interface creates a dc offset voltage
2Itot
(up to 200–300 mV), which must be filtered out by the NEF = v ni,rms (1)
AFE in order to avoid the saturation of the first-stage πUt 4kT BW
amplifier [11], [12]. Also, in order to reduce the sensi- where Ut is the thermal voltage, k is the Boltzmann’s constant,
tivity to electrode impedance imbalance, the AFE should T is the absolute temperature, BW is the −3 dB bandwidth
present a very high-input impedance to the preceding of the amplifier, Itot is the total current, and v ni,rms is the
electrodes. total input-referred voltage noise of the amplifier, which can
5) Chip Area: It must be as small as possible for the be approximated as [32]
body worn and implantable devices. It is popularly
known that the 1/ f noise of the MOS transistors is 4kT
v ni,rms ≈ . (2)
inversely proportional to the occupied area, which makes 3C L A M
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Fig. 7. Simulation result for the input-referred rms voltage noise of the LNA
with respect to the input pair channel width for different channel lengths.
Fig. 5. Schematic of fully differential two-stage biosensing amplifier
comprises of LNA and PGA.
transistors will lower the thermal and 1/ f noise components,
respectively. Second, the input pair parasitic capacitance Cin1
should be minimized (i.e., input pair dimensions should be
kept small) to minimize the factor (C S1 + C f 1 + Cin1 )/C S1
in (4). If area is not an important design criteria then this factor
can easily be minimized by choosing large C S1 and C f 1 , such
that C S1 + C f 1 Cin1 . However, this is not a viable solution,
since we have included AFE area as an important design
criterion. The arguments listed above suggest that increasing
the dimensions of the input pair M1,2 beyond a certain
optimum value will make the ratio (C S1 + C f 1 + Cin1 )/C S1 a
Fig. 6. Schematic of fully differential FC OTA A1 for the biosensing LNA.
dominant factor in (4), which will adversely affect the v ni,LNA
2 .
Therefore, we need to evaluate the effect of input differential
written as a function of the input-referred voltage noise of pair M1,2 size on the v ni,LNA
2 . Also, in order to achieve a high
noise-area-power efficiency, we need to limit the values of
the OTA A1 , v ni,A1
2 , by the following relation:
capacitors C S1 and C f 1 , and input bias current I B .
(C S1 + C f 1 + Cin1 )2 Fig. 7 shows the simulated value of v ni,LNA 2 versus the
v ni,LNA
2 = v ni,A1
2
2
(4)
C S1 input transistors M1,2 width for the different channel lengths.
As seen from Fig. 7 that an optimum input transistor dimen-
where Cin1 is the input parasitic capacitance of the OTA A1 sions can be found for the given bias current I B and the ratio
(see Fig. 5). From this expression, it is clear that the noise from C S1/C f 1 . In this optimization example, we set the I B and
the OTA A1 is the most dominant component in the expression C S1/C f 1 to 0.5 μA and 10 pF/100 fF, respectively.
of v ni,LNA
2 . In addition, the factor (C S1 + C f 1 + Cin1 )/C S1 The AFE capacitors are implemented by the high
must be kept close to 1 to lower the v ni,LNA
2 . For the folded density (4 fF/μm2 ) but well matched metal–insulator–
cascade (FC) OTA A1 (Fig. 6) designed in this paper, the metal (MIM) capacitors. The MIM capacitors were placed
input-referred voltage noise, including both flicker (1/ f ) and over the active transistor area to minimize the overall size.
thermal noise components, can be approximated as The common-centroid and symmetrical layout techniques were
utilized to minimize the mismatches in the differential path for
∼ 1 4kT 16 gm13,14 16 gm5,6
v n,
2
= + kT + kT an improved CMRR.
A1
gm1,2 κ 3 gm1,2 3 gm1,2
2 Kp Kn gm13,14 2 C. Optimum Number of Stages and Filtering Requirement
+ 2 +
COX f W1,2 L 1,2 W13 L 13 gm1,2 Two stages of signal amplification is required to efficiently
Kp gm5,6 2 control the gain without compromising the signal linearity
+ (5) and tracking speed, while providing sufficient dynamic range.
W5 L 5 gm1,2
Thus, the AFE comprises two gain stages: LNA and PGA.
where gmi is the transconductance of the i th transistor in A1 , The LNA is designed for a very low noise, whereas the PGA
k is the Boltzmann’s constant, κ is the inverse of subthreshold provides additional gain with a sufficient linearity and dynamic
slope, T is the absolute temperature, and K p and K n are the range. Having more than two stages of amplification would
1/ f noise coefficients. unnecessarily burden the AFE with additional power and area
Combining (3) and (4) suggests following conclusions for overhead. However, the AFE still requires one LPF stage that
the LNA design: first, maximizing the gm1,2 (i.e., increasing follows the LNA and PGA for the reasons explained in the
the W1,2 /L 1,2 or I B ), and the area (W1,2 × L 1,2 ) of the input following.
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First, the LPF sees both the amplification stages as a single mirror OTA architecture. This topology requires a high bias
amplifier, relaxing the bandwidth criteria, and hence removing current to achieve satisfactory v ni,A1
2 and also has a lower
the signal errors associated with the tracking speed of LNA. open-loop gain. A telescopic OTA has a large open-loop gain,
Second, the in-built low-power buffers in the LPF discard but the input and load devices cannot be optimized separately
the need for extra power hungry buffer stages to drive a for a noise-power tradeoff [21]. Similarly, a two-stage OTA
subsequent ADC in the WBSN system. Third, the LPF stage provides high gain but poor energy efficiency [18], [24], [28].
preceding the ADC acts as an antialiasing filter for the ADC As demonstrated in [14] and [30], the FC topology can
and can be employed with various ADC architectures. Finally, be optimized for a near optimal noise and energy efficiency.
the deployment of LPF following the amplifiers allows all We also include area as an important design criterion and
three stages (LNA, PGA, and LPF) in the AFE to be optimized utilized the FC OTA to achieve a better noise-power-area
separately, which makes the design easier and modular. Since a tradeoff compared to the other topologies.
modular WBSN is designed to acquire a variety of biopotential The schematic of the fully differential, low-noise FC OTA
signals, a high filter rolloff (−60 dB/decade) along with a A1 and its common-mode feedback (CMFB) circuit is shown
reconfigurable low-pass cutoff frequency was chosen for the in Fig. 6. As evident from (5) that in order to minimize
LPF design. The cutoff frequency of the LPF is digitally recon- the v ni,A1
2 , the gm of the input differential pair M1,2 need
figured by the PV clock oscillator [33] with programmable to be maximized, whereas the gm of transistors M5,6 and
clock frequencies. M13,14 should be minimized. To accomplish the task, current
The f HP and f LP of the AFE are determined by the scaling is applied between the input differential pair and the
bandwidth of a given biopotential. For example, the bandwidth
folded branch with the bias current ratio of 1/12 (Fig. 6).
of electromyogram (EMG), electroencephalogram (EEG), and The input pair transistors M1,2 are biased in the subthreshold
electrocardiogram (ECG) signals are 10 Hz–1 kHz, 1–150 Hz, region to achieve maximum gm1,2 for I B = 1 μA. The
and 0.5–250 Hz, respectively, for most recording purposes. effective gm is further increased by boosting the impedances
Similarly, neural signals contain the information from less looking into the nodes X and Y , by using cascode transistors
than 1 Hz to 10 kHz. Accordingly, the cutoff frequencies M11 and M12 , respectively. This also eliminates a need for the
in the AFE signal chain are made reconfigurable. The f HP large source degeneration resistors (∼ hundreds of k) for the
can be tuned from 0.5 to 300 Hz by changing the bias current sink transistors, thereby lowering the area occupation.
voltage (VTUNE ) of transistors MT 1 –MT 4 in the LNA (Fig. 5).
The size of pMOS input transistors, M1,2 , is designed to be
This tunability would also compensate for the variation in comparatively large (W1,2 = 336 μm and L 1,2 = 0.7 μm)
f HP,LNA due to the pseudo-resistance sensitivity to the CMOS to minimize the 1/ f noise component, as expressed in (5).
process variations and provide a high uniformity in the first The pMOS transistors are chosen for the M1,2 for its lower
stage f HP,LNA in a multinode and/or multichannel WBAN 1/ f noise characteristics than the nMOS transistors.
scenario. The f LP of the AFE is reconfigured by programming A high gm1,2 , to obtain good noise performance at a
the cutoff frequency of G m –C LPF. given I B , yields lower M1,2 overdrive voltages, thereby com-
Details of design and optimization of the circuit blocks are promising the signal linearity. In order to meet the linear-
discussed in the following section.
ity specification, two design strategies are employed. First,
two gain stages are designed, where the LNA gain is kept
IV. C IRCUIT B LOCKS low (38 dB) to limit its output signal swing and then the
A. Biosensing LNA second-stage PGA is designed for high linearity since its
The design of LNA (Fig. 5) is based on the optimization noise specification is relaxed. Second, a very small W/L ratio
methodology described in the previous section. Due to the (1 μm/15 μm) and thus a large overdrive voltage is chosen
large amplitude range of the biopotential signals (tens of for the CMFB input pair transistors M15 –M18 to maximize the
microvolts to millivolts), the first stage cannot afford to have output differential signal and hence the signal linearity at the
a high output signal swing. To keep that in mind, a relatively amplifier output.
low gain of 38 dB (80 V/V) is set for the first stage LNA
by choosing C S1 = 9.6 pF and C f 1 = 120 fF, respectively. C. PGA
The selection of these values for C S1 and C f 1 is carried
The PGA comprises an FC OTA A2 with a reconfigurable
out to maximize all the design tradeoffs and to satisfy the
capacitive feedback (Fig. 5). Since the conventional capaci-
expression (3). The multiple reference voltages from the BGR
tive feedback PGA suffers from a low (sub-hertz) frequency
are multiplexed to generate the tune voltage VTUNE for LNA,
distortion due to the pole–zero pair created by C f 2 and
thereby providing tunability to f HP (0.5 to 300 Hz).
switch resistance (OFF-state), a switch-over feedback topology
is utilized that effectively removes this distortion [28].
B. Energy-Efficient Low-Noise OTA The FC OTA A2 has a much relaxed specification on the
The selection of the OTA architecture for a low-noise and IRN and is mainly designed for a high linearity and high
energy-efficient LNA design should carefully be investigated. dynamic range. Therefore, the schematic of OTA core A2 is
The open-loop gain of the OTA must be very high to minimize similar to the OTA A1 (Fig. 6) except it does not include the
the gain error due to the capacitive feedback. The low-noise cascode devices M11 and M12 . However, the current scaling
neural amplifier presented in [13] and [18] utilizes the current is still utilized to minimize the total power consumption of
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be described as
i out = (Ivar /I A ) × (i dp − i dn ). (7)
Thereby, the gmf is proportional to the input current Ivar .
The outputs are cascaded to help to keep the output resistance
high which results in the dc gain being equal to one.
Fig. 10 illustrates a schematic for an on-chip dynamic
frequency control block. The LPF core is given in the bottom
left of Fig. 10. It is configured for three poles (Fig. 8) where
the cutoff frequency for each stage is proportional to the
product of gmf and 1/C of the capacitors. A current from the
Fig. 9. Simplified schematic for the variable gmf -stages used in the LPF
core. voltage-to-current (V –I ) converter is used to vary the cutoff
frequency of the filter by adjusting the gmf for each stage.
A reference current Iref flows into a reference gmR -block
the AFE. A 0.5-μA bias current is used for the input pair in which the gain changes with current in the same way that
M1,2 transistors, while each folded branch draws 100 nA the gmf -stages in the LPF core change. The opamp-buffered
from the 1.4-V regulated supply. In order to maximize the output of the reference gmR -block is effectively sampled with
output dynamic range and the linearity of the CMFB circuit, the collection of switches shown in Fig. 10. A charge placed
a minimum size (0.5 μm/20 μm) is chosen for the transistors on the C2 from sampling is then compared to a fixed ramp.
M15 –M18 . The system will dynamically adjust the charge on C2 com-
pared to a fixed ramp until they are equal. This configuration
improves upon the implementation in [34] with the addition of
D. Gm –C LPF
a sample and hold after the opamp having C2 . The frequency
A simplified schematic is given in Fig. 8 for the G m -C LPF of the input clock controls the ramp time. The net effect, and
core, having a total of three poles. In each channel, two poles indeed the goal of the circuit is to able to control the cutoff
are from a biquad stage and the other pole is from a single frequency of the LPF with the input clock.
pole stage. The transfer function of the filter core is Fig. 11(a) depicts simulated waveforms illustrating the
Vop (s) − Von (s) calibration for the cutoff frequency. Upon the assertion of
Vip (s) − Vin (s) the ph2 signal, there is a negative step at the output of
the opamp (V2 ) feeding the ph_hold switch (Fig. 10). The
(1/b)(gmf /C)3
= (6) amplitude of the negative-going pulse is a measure of transcon-
{s 2 + (gmf /aC)s + (gmf /C)2 }{s + (gmf /bC)} ductance. Immediately after this the phi signal is asserted
where gmf is a single-stage transconductance. Fig. 9 depicts and a ramp starts. The length of the ramp is a measure of
a simplified schematic for the variable gmf -stage used in the the frequency of the incoming clock. The value at the end
LPF core. The output resistance of transistors M3 and M4 , of the ramp is sampled with the ph_hold signal, and this
which are in the saturation mode, serves as a source degen- sampled value is servoed so it is equal to Vref . The negative-
eration resistor for transistors M5 and M6 . The linearity going pulse will then be equal to the positive ramp; hence,
is thereby enhanced allowing an acceptable total harmonic the transconductance of the gmR -stage is being controlled with
distortion (THD) performance. The front-end stage dominates the frequency of the incoming clock. Fig. 11(b) illustrates the
the linearity performance, and the THD was measured to Vcont signal for three different values of frequency.
be >56 dB over corners. The variable gmf -stages have internal poles and zeroes, and
A differential current from the linearized input differential we wanted to evaluate the overall filter performance including
pair is folded into a gilbert-type gain cell thereby enabling the these poles and zeroes. First, we varied the current Ivar to
value of the transimpedance gain to be varied with the input the gmf stages in the LPF core so as to vary the cutoff
current Ivar . The current gain of the gmf -stage can therefore frequencies. This is depicted in Fig. 12. Notice the shape of
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Fig. 11. LPF simulation results depicting (a) calibration for the LPF cutoff
frequency f LP and (b) Vcont signal for three different clock frequencies.
Fig. 15. Split capacitive DAC array with unit attenuation capacitor (C0 ) and
switching waveforms.
phase for the region within 5× of the cutoff does not vary
more than 10° from the ideal Bessel case.
Fig. 12. Frequency sweep with Ivar to vary the cutoff frequency.
E. SAR ADC
Fig. 14 shows the block diagram of 10-b charge redistri-
bution SAR ADC that comprises a capacitive DAC array,
SAR digital control logic, and energy-efficient compara-
tor. We use a split capacitive DAC array to minimize the
total capacitance, and hence the active area of the ADC.
Fig. 15 shows the DAC array and switching waveforms
for the positive side of operation. Since the ADC is fully
differential, the operation for negative DAC array would be
Fig. 13. Gain and phase plots to compare with ideal case with constant gmf . complimentary to the positive side. Instead of being fractional,
the attenuation capacitor in the DAC array is implemented
by the unit capacitance C0 (95 fF) for better matching.
the filter characteristics is maintained throughout. There is no Although, the implementation of the attenuation capacitor with
peaking or any other detrimental effect. The shape of the filter C0 lowers the nonlinearity associated with fractional capacitor,
characteristics is maintained throughout the calibration. it leads to the 1-LSB of gain error. In order to ensure the gain
Next, the magnitude and phase characteristics of the filter error to be always less than 1-LSB, we employ a dummy unit
core for the cutoff frequencies from Fig. 12 were compared capacitor C0 in the LSB DAC array. We utilized a common-
to an ideal representation of (6). A copy of the core filter centroid layout scheme for the DAC array to minimize the
was idealized by replacing the gm -stages with an ideal voltage mismatches of the capacitor array.
controlled current source to represent the appropriate gm value. The switching energy of the capacitive DAC array and
In this paper, the target transfer function was a three-pole SAR control logic are optimized for ultralow power opera-
Bessel filter. Then, the gain and the phase were compared in tion of the ADC. The DAC switching presented here uses
the pass region and also in the region within 5× of the cutoff only two global phases namely–sampling 1 and reset 2 .
frequency. The simulation results are given in Fig. 13. It is We derive the bit-cycling phase 2 from the reset phase 2
clear that in the pass region the characteristics of the actual and combine them in a single phase. This simplifies the
core filter and the ideal filter are virtually identical, and the DAC switching control. The MSB is coded as a sign bit
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Fig. 17. Chip microphotograph. (AFE includes LNA, PGA, and G m -C LPF.)
TABLE I
M EASURED P ERFORMANCE S UMMARY
TABLE II
P ERFORMANCE C OMPARISON W ITH C APACITIVELY C OUPLED B IOSENSING F RONT E NDS
TABLE III
PVT S IMULATION R ESULTS
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pp. 159–161, Apr. 2013. engineering from Purdue University, West Lafayette,
[38] P. Annila, V. Jantti, L. Lindgren, and A. Yli-Hankala, “Changes in IN, USA.
the T-wave amplitude of ECG during isoflurane anaesthesia,” Acta He is currently a Research Assistant Professor of
Anaesthesiol. Scandin., vol. 37, no. 6, pp. 611–615, Aug. 1993. Biomedical Engineering with Purdue University, and
an Adjunct Assistant Professor of Medicine with the
Indiana University School of Medicine, Indianapolis,
IN, USA. He develops and translates technologies
Hansraj Bhamra (S’13–M’16) received the B.E. that enable persistent, bidirectional communication
(Hons.) degree in electronics and communication with the peripheral and central nervous system.
engineering from Pt. Ravishankar Shukla University, He has over a decade of training and experience in bioelectronic medicine,
Raipur, India, in 2004, the M.Tech. degree in RF signal processing, neurophysiology, and artificial intelligence in medical
design and technology from IIT Delhi, New Delhi, devices. He currently develops adaptive, multifunctional brain–computer inter-
India, in 2006, and the Ph.D. degree in electrical and face technology to seamlessly connect patients to medical devices that treat
computer engineering from Purdue University, West gastroparesis, depression, incontinence, and other conditions.
Lafayette, IN, USA, in 2016.
From 2006 to 2010, he was a Senior Analog/Mixed
Signal Design Engineer with Conexant Systems, Pedro Irazoqui (M’95–SM’13) received the B.Sc.
Hyderabad, India. In 2012, he interned at Intel and M.Sc. degrees in electrical engineering from
Corporation, Hillsboro, OR, USA. He was an Analog/Mixed Signal Design the University of New Hampshire, Durham, NH,
Intern at Broadcom Corporation, San Jose, CA, USA, in 2015, where he was USA, in 1997 and 1999, respectively, and the Ph.D.
involved in the next-generation analog front-end design for the touch system. degree in neuroengineering from the University of
He is currently an Analog/Mixed Signal IC Design Engineer with Apple California, Los Angeles, CA, USA, in 2003, with
Inc, Melbourne, FL, USA. His current research interests include low-power a focus on the design, manufacture, and packaging
analog/mixed-signal and RF IC design for biomedical devices and wireless of implantable integrated-circuits for wireless neural
sensor nodes. recording.
He is currently the Director of the Purdue’s Center
for Implantable Devices, an Associate Head for
research, and a Professor with the Weldon School of Biomedical Engineering
John Lynch received the B.S. degree in electrical and the School of Electrical and Computer Engineering, Purdue University,
engineering from Purdue University, West Lafayette, West Lafayette, IN, USA.
IN, USA, in 1982, and the M.S. degree in electrical Dr. Irazoqui has named as a Showalter Faculty Scholar and the Purdue
engineering from National Technological University, University Faculty Scholar, both in 2013. He received the Best Teacher
Fort Collins, CO, USA, in 1989. He is currently Award from the Weldon School of Biomedical Engineering in 2006 and 2009,
pursuing the Ph.D. degree in electrical engineering the Early Career Award from the Wallace H. Coulter Foundation in 2007 and
with Purdue University. Phase II in 2009, the Marion B. Scott Excellence in Teaching Award from
He was involved in consumer products at Tau Beta Pi in 2008, the Outstanding Faculty Member Award from the
Kodak, Rochester, NY, USA, mixed-signal design at Weldon School of Biomedical Engineering in 2009, and the Excellence
Cadence and LSI, Rochester, and touch and display in Research Award from Purdue in 2010, 2012, and 2013. He has been
systems at National Semiconductor and Synaptics, serving as an Associate Editor of the IEEE T RANSACTIONS ON B IOMEDICAL
Rochester. E NGINEERING since 2006.