SUP90N10-09

New Product Vishay Siliconix

N-Channel 100-V (D-S) 175_C MOSFET

FEATURES
D TrenchFETr Power MOSFETS
PRODUCT SUMMARY D 175_C Junction Temperature
D New Package with Low Thermal Resistance
V(BR)DSS (V) rDS(on) (W) ID (A)
100 0.0094 @ VGS = 10 V 90 a
APPLICATIONS
D Automotive
- 42-V Power Bus
- DC/DC Conversion
- Motor Drivers
- Injection Systems
D
TO-220AB

G D S
S
Top View
SUP90N10-09 N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS "20 V

TC = 25_C 90a
_
Continuous Drain Current (TJ = 175_C) ID
TC = 125_C 64a
A
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
TC = 25_C 300c
Maximum Power Dissipationb PD W
TA = 25_Cd 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mounted)d RthJA 40
_
_C/W
Junction-to-Case (Drain) RthJC 0.5

Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).

Document Number: 72075 www.vishay.com

S-22125—Rev. A, 25-Nov-02 1
SUP90N10-09
Vishay Siliconix New Product

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 100
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 80 V, VGS = 0 V 1
m
mA
Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C 50
VDS = 80 V, VGS = 0 V, TJ = 175_C 250 mA
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0075 0.0094

Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.017 W

VGS = 10 V, ID = 30 A, TJ = 175_C 0.024
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S

Dynamicb
Input Capacitance Ciss 8700
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 740 pF
Reverse Transfer Capacitance Crss 450
Total Gate Chargec Qg 140 210
Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 85 A 41 nC
Gate-Drain Chargec Qgd 41
Turn-On Delay Timec td(on) 20 30
Rise Timec tr 110 170
VDD = 50 V, RL = 0.6 W
ns
Turn-Off Delay Timec td(off) ID ^ 85 A, VGEN = 10 V, RG = 2.5 W 65 100
Fall Timec tf 100 150

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current IS 90
A
Pulsed Current ISM 240

Forward Voltagea VSD IF = 50 A, VGS = 0 V 1.0 1.5 V

Reverse Recovery Time trr 70 140 ns
Peak Reverse Recovery Current IRM(REC) m
IF = 50 A, di/dt = 100 A/ms 5.5 10 A
Reverse Recovery Charge Qrr 0.19 0.35 mC

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

www.vishay.com Document Number: 72075

2 S-22125—Rev. A, 25-Nov-02
 SUP90N10-09
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics
250 250

VGS = 10 thru 6 V
200 200
I D - Drain Current (A)

I D - Drain Current (A)

150 150
5V

100 100

TC = 125_C
50 50
25_C
4V -55 _C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

250 0.015
TC = -55_C

200 0.012
r DS(on) - On-Resistance ( W )

25_C
g fs - Transconductance (S)

150 125_C 0.009 VGS = 10 V

100 0.006

50 0.003

0 0.000
0 15 30 45 60 75 90 0 20 40 60 80 100 120

ID - Drain Current (A) ID - Drain Current (A)

Capacitance Gate Charge

12000 20

10000 VDS = 50 V
V GS - Gate-to-Source Voltage (V)

16 ID = 85 A
Ciss
C - Capacitance (pF)

8000
12

6000

8
4000

4
2000 Crss
Coss

0 0
0 20 40 60 80 100 0 50 100 150 200 250

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Document Number: 72075 www.vishay.com

S-22125—Rev. A, 25-Nov-02 3
SUP90N10-09
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

2.5 100
VGS = 10 V
ID = 30 A
2.0
r DS(on) - On-Resistance (W)

I S - Source Current (A)

(Normalized)

1.5 TJ = 150_C TJ = 25_C

10

1.0

0.5

0.0 1
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2

TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)

Drain Source Breakdown vs.

Avalanche Current vs. Time Junction Temperature
1000 125

120
ID = 10 mA
100
V(BR)DSS (V)

IAV (A) @ TA = 25_C 115

I Dav (a)

10 110

105
IAV (A) @ TA = 150_C
1
100

0.1 95
-50 -25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ - Junction Temperature (_C)

www.vishay.com Document Number: 72075

4 S-22125—Rev. A, 25-Nov-02
 SUP90N10-09
New Product Vishay Siliconix

THERMAL RATINGS

Maximum Avalanche and Drain Current

vs. Case Temperature Safe Operating Area
120 1000
Limited
by rDS(on)
100 10 ms

100

I D - Drain Current (A)

I D - Drain Current (A)

80 100 ms,

60 10
1 ms
10 ms
40 dc, 100 ms

1 TC = 25_C
20 Single Pulse

0
0.1
0 25 50 75 100 125 150 175 0.1 1 10 100

TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1 Duty Cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1 0.05
0.02
Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1
Square Wave Pulse Duration (sec)

Document Number: 72075 www.vishay.com

S-22125—Rev. A, 25-Nov-02 5