KSC130

003A
KSC13003A

◎ SEMIHOW REV.A1,Oct 2007

 KSC130
003A
KSC13003A

Switch Mode series NPN silicon Power Transistor

- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls

1.5 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted 20 Watts
TO-126
CHARACTERISTICS SYMBOL RATING UNIT 1. Base
2. Collector
Collector-Base Voltage VCBO 700 V 3. Emitter

Collector-Emitter
Collector Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current(DC) IC 1.5 A
Collector Current(Pulse) ICP 3 A
Base Current IB 0.75 A
Collector Dissipation(Tc=25℃) PC 20 W
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -65~150 ℃ 2
3

Electrical Characteristics TC=25℃ unless otherwise noted

CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit

Collector-Emitter Breakdown Voltage VCEO IC=5mA, IB=0 400 V

Emitter Cut-off Current IEBO VEB=9V,IC=0 10 ㎂

*DC Current Gain hFE1 VCE=2V,IC=0.5A 9 40

hFE2 VCE=2V,IC=1A 5

Collector-Emitter Saturation Voltage

*Collector-Emitter VCE(sat) IC=0.5A,I
=0 5A IB=0.1A
=0 1A 0.5
0 5 V
IC=1A,IB=0.25A 1 V
IC=1.5A,IB=0.5A 3 V

*Base-Emitter Saturation Voltage VBE(sat) IC=0.5A,IB=0.1A 1 V

IC=1A,IB=0.25A 1.2 V

Output Capacitance Cob VCB=10V, f=0.1MHz 21 ㎊

Current Gain Bandwidth Product fT VCE=10V,IC=0.1A 4 ㎒

Turn on Time ton 1.1 ㎲

Vcc=125V, Ic=2A
Storage Time tstg IB1=0.2A, IB2= -0.2A 4.0 ㎲
RL=125Ω
Fall Time tF 0.7 ㎲
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

Note. Package Mark information.

R 9 ~ 16 S SemiHow symbol
hFE1 S YWW Z
O 14 ~ 21 YWW Y year code,
Y; d WW
WW; weekk code
d
Classification KSC13003A
Y 19 ~ 26 Z hFE1 Classification

◎ SEMIHOW REV.A1,Oct 2007

 KSC130
003A
Typical Characteristics

◎ SEMIHOW REV.A1,Oct 2007

 KSC130
Package Dimension

003A
TO-
TO-126

8.5max 2.8max
± 0.2
3.2
φ
3.8±0.2

12max

1 27typ
1.27typ

1.2±0.2
2.5±0.2

13max

0.78±0.08
2.3max 0.5±0.1
2.3max

Dimensions in Millimeters

◎ SEMIHOW REV.A1,Oct 2007