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8AF Series

Vishay Semiconductors

Pressfit Rectifier Diodes, 50 A

FEATURES
• Convenient pressfit package
• Available with and without leads
• High surge capabilities
• Fully characterized bulletin
• RoHS compliant

B-47 • Designed and qualified for industrial level

PRODUCT SUMMARY
IF(AV) 50 A

MAJOR RATINGS AND CHARACTERISTICS


PARAMETER TEST CONDITIONS VALUES UNITS
50 A
IF(AV)
TC 150 °C
IF(RMS) 79 A
50 Hz 714
IFSM A
60 Hz 747
50 Hz 2546
I2 t A2 s
60 Hz 2324
I2t 25 455 A2s
VRRM Range 50 to 400 V
TJ - 65 to 195 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IRRM MAXIMUM
TYPE VOLTAGE
PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT TJ = TJ MAXIMUM
NUMBER CODE
V V mA
05 50 75 7
1 100 150 7
8AF
2 200 300 5
4 400 500 5

Document Number: 93530 For technical questions, contact: ind-modules@vishay.com www.vishay.com


Revision: 17-Jun-08 1
8AF Series
Vishay Semiconductors Pressfit Rectifier Diodes, 50 A

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current 50 A
IF(AV) 180° conduction, half sine wave
at case temperature 150 °C
Maximum RMS forward current IF(RMS) 79 A
t = 10 ms No voltage 714
Maximum peak, one cycle forward, t = 8.3 ms reapplied 747
IFSM A
non-repetitive surge current t = 10 ms 100 % VRRM 600
t = 8.3 ms reapplied Sinusoidal half wave, 628
initial TJ =
t = 10 ms No voltage TJ maximum 2546
t = 8.3 ms reapplied 2324
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 1800
t = 8.3 ms reapplied 1643
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 25 455 A2s
Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.60
V
High level value of threshold voltage VF(TO)2 ( x IF(AV) < I < 20 x  x IF(AV)), TJ = TJ maximum 0.68
Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 6.66
m
High level value of forward slope resistance rf2 ( x IF(AV) < I < 20 x  x IF(AV)), TJ = TJ maximum 6.25
Maximum forward voltage drop VFM TJ = 25 °C, IFM =  x rated IF(AV) 1.45 V

THERMAL AND MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
TJ, TStg - 65 to 195 °C
and storage temperature range
Maximum thermal resistance,
RthJC DC operation 0.60
junction to case
K/W
Typical thermal resistance, (1)
RthCS As per mounting details, see note 0.50
case to heatsink
10 g
Approximate weight
0.36 oz.
Case style See dimensions - link at the end of datasheet B-47
Note
(1) Mounting: A 12.6 ± 0.02 mm (0.496 to 0.497") diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038 mm
(0.015") x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93530


2 Revision: 17-Jun-08
8AF Series
Pressfit Rectifier Diodes, 50 A Vishay Semiconductors

RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.042 0.026
120° 0.045 0.043
90° 0.06 0.06 TJ = TJ maximum K/W
60° 0.10 0.10
30° 0.15 0.15
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

200 200

Maximum Allowable Case Temperature (°C)


Maximum Allowable Case Temperature (°C)

8AF Series 8AF Series


RthJC (DC) = 0.6 K/W RthJC (DC) = 0.6 K/W
190 190

180 180
Conduction Angle Conduction Period
170 170

160 160

150 90° 150 90°


60° 120° 60° 120°
30° 180° 30° 180° DC
140 140
0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 60 70 80
Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

80
Maximum Average Forward Power Loss (W)

R
180°
th

120° 1.5
SA

70 K/ =
90° W 1
K/
2K W
60 60° /W -D
30° el
RMS Limit ta
R
50 3K
/W
40
5K
/W
30
Conduction Angle
20 10 K/W
8AF Series
10 TJ = 195°C 15 K/W

0
0 10 20 30 40 50 60
0 25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Forward Power Loss Characteristics

Document Number: 93530 For technical questions, contact: ind-modules@vishay.com www.vishay.com


Revision: 17-Jun-08 3
8AF Series
Vishay Semiconductors Pressfit Rectifier Diodes, 50 A

90

Maximum Average Forward Power Loss (W)


R
80 DC

th
SA
180° 1.5 =
1K
70 120° K/ /W
W
90° -D
2K elt
60 60° /W a
R
30° RMS Limit
50 3K
/W
40
5K
/W
30
Conduction Period
20 10 K/W
8AF Series
10 TJ = 195°C 15 K/W
0
0 10 20 30 40 50 60 70 80
0 25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics

700 1000
At Any Rated Load Condition And With
Peak Half Sine Wave Forward Current (A)

650 Rated V RRM Applied Following Surge.

Instantaneous Forward Current (A)


600 Initial TJ = 195°C
@ 60 Hz 0.0083 s 8AF Series
550 @ 50 Hz 0.0100 s
100
500
450
400
350 10
300
TJ = 25°C
250
8AF Series TJ = 195°C
200
150 1
1 10 100 0 1 2 3 4 5 6 7
Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics

750 1
Maximum Non Repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)

Steady State Value


Peak Half Sine Wave Forward Current (A)

700 Versus Pulse Train Duration.


(DC Operation)
650 Initial TJ = 195 °C
600 No Voltage Reapplied
Rated VRRM Reapplied
550
500
450 0.1
400
350
300
250 8AF Series
8AF Series
200
150 0.01
0.01 0.1 1 0.001 0.01 0.1 1 10

Pulse Train Duration (s) Square Wave Pulse Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93530


4 Revision: 17-Jun-08
8AF Series
Pressfit Rectifier Diodes, 50 A Vishay Semiconductors

ORDERING INFORMATION TABLE

Device code 8AF 4 N LV

1 2 3 4

1 - Essential part number


2 - Voltage code x 100 = VRRM (see Voltage Ratings table)
3 - N = Normal polarity (cathode to case)
R = Reverse polarity (anode to case)
4 - PP = Without lead
LH = Horizontal lead
LV = Vertical lead

LINKS TO RELATED DOCUMENTS


Dimensions http://www.vishay.com/doc?95330

Document Number: 93530 For technical questions, contact: ind-modules@vishay.com www.vishay.com


Revision: 17-Jun-08 5
Outline Dimensions
Vishay Semiconductors

B-47

DIMENSIONS in millimeters (inches)

15.8 (0.62) 12.5 (0.49)

0.9 (0.03)
7 (0.28)

R 0.4 (0.02)

16.5 (0.65)
2.4 (0.09)
22.5 (0.89) 5 (0.20)

0.5 (0.02)
6 (0.24)

Ø 12.77/13.27
(Ø 0.50/0.52)

Document Number: 95330 For technical questions, contact: indmodules@vishay.com www.vishay.com


Revision: 04-Jul-08 1
Legal Disclaimer Notice
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12 1 Document Number: 91000