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  • Simulatio 1d Poisson

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    Modassir Anwer
    9 Ansichten4 Seiten
    detail isabout 1d poisson equation solver that help to suolve

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    simulatio 1d poisson

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    detail isabout 1d poisson equation solver that help to suolve

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    © All Rights Reserved
    Als TXT, PDF, TXT herunterladen oder online auf Scribd lesen
    Markieren Sie unangemessene Inhalte
    9 Ansichten4 Seiten

    Simulatio 1d Poisson

    Hochgeladen von

    Modassir Anwer
    detail isabout 1d poisson equation solver that help to suolve

    Copyright:

    © All Rights Reserved
    Als TXT, PDF, TXT herunterladen oder online auf Scribd lesen
    Markieren Sie unangemessene Inhalte
    von 4

    beta5

    # This is the materials file. If you edit this file, be sure you know what you are
    doing!

    GaAs binary GaAs

    +0.142E+01 +0.000E+00 +0.131E+02 +0.670E-01 +0.100E+01 +0.480E+00 +0.820E-01


    +0.600E-02 +0.300E-01 +0.600E+00 +0.700E+00
    +0.000E+00 +0.000E+00 +0.000E+00 +0.000E+00 +0.850E+04 +0.400E+03 +0.100E-11
    +0.100E-11 +0.000E+00 0.0E+00
    AlGaAs ternary GaAs Aluminum Galium Arsinide

    0.000E+00 0.000E+00 0.000E+00 0.000E+00 0.100E+01

    eg 0.000 0.450 1.424E+00 1.247E+00 0.000E+00 0.450 1.000 1.900E+00 1.250E-01


    1.430E-01
    dec 0.000 0.450 0.000E+00 7.730E-01 0.000E+00 0.450 1.000 4.760E-01 -3.490E-01
    1.430E-01
    er 0.000 1.000 1.310E+01 -3.000E+00 0.000E+00

    ed 0.000 1.000 3.000E-02 0.000E+00 0.000E+00

    ea 0.000 1.000 4.000E-02 0.000E+00 0.000E+00

    edd 0.000 1.000 0.600E+00 0.000E+00 0.000E+00

    eda 0.000 1.000 0.600E+00 0.000E+00 0.000E+00

    me 0.000 0.450 6.700E-02 8.300E-02 0.000E+00 0.450 1.000 8.500E-01 -7.000E-02


    0.000E+00
    val 0.000 0.450 1.000E-00 0.000E-00 0.000E+00 0.450 1.000 6.000E-00 0.000E-00
    0.000E+00
    mh 0.000 1.000 4.800E-01 3.100E-02 0.000E+00

    mlh 0.000 1.000 8.200E-02 5.300E-03 0.000E+00

    emo 0.000 1.000 4.000E+03 0.000E+00 0.000E+00

    hmo 0.000 1.000 4.000E+02 0.000E+00 0.000E+00

    tn 0.000 1.000 1.000E-10 0.000E+00 0.000E+00

    tp 0.000 1.000 1.000E-10 0.000E+00 0.000E+00


    pol 0.000 1.000 0.000E+00 0.000E+00 0.000E+00
    al 0.000 1.000 0.000E+00 0.000E+00 0.000E+00

    endAlGaAs

    SIGaAs binary GaAs Semi-Insulating GaAs, Cr and O doped.

    +0.142E+01 +0.000E+00 +1.310E+01 +6.700E-02 +0.100E+01 +4.800E-01 +8.200E-02


    +6.000E-03 +3.000E-02 +7.000E-01 +5.840E-01
    +0.000E+00 +0.000E+00 +1.000E+16 +1.000E+16 +8.500E+03 +4.000E+02 +1.000E-08
    +1.000E-08 +0.000E+00 +0.000E+00
    InP binary InP Indium Phosphide

    +1.350E+00 +0.000E+00 +1.240E+01 +7.700E-02 +0.100E+01 +6.400E-01 +8.200E-02


    +6.000E-03 +2.000E-02 +6.500E-01 +6.500E-01
    +0.000E+00 +0.000E+00 +0.000E+00 +0.000E+00 +4.600E+03 +1.500E+02 +1.000E-08
    +1.000E-08 +0.000E+00 +0.000E+00
    SIInP binary InP Semi-Insulating Indium Phosphide

    +1.350E+00 +0.000E+00 +1.240E+01 +7.700E-02 +0.100E+01 +6.400E-01 +8.200E-02


    +6.000E-03 +2.000E-02 +6.500E-01 +6.500E-01
    +0.000E+00 +0.000E+00 +1.000E+16 +1.000E+16 +4.600E+03 +1.500E+02 +1.000E-08
    +1.000E-08 +0.000E+00 +0.000E+00
    Si binary Si

    0.112E+01 +0.000E+00 0.119E+02 3.283E-01 +0.600E+01 0.490E+00 0.160E+00


    0.300E-02 0.100E-01 0.300E-02 0.100E-01
    +0.000E+00 0.000E+00 0.0 0.0 1.5E+3 4.5E+2 2.5E-3 2.5E-3 0.0 +0.000E+00
    SiO2 binary Si

    0.900E+01 0.290E+01 0.390E+01 0.100E+01 +0.600E+01 0.100E+01 0.100E+01


    0.300E-02 0.500E-02 0.300E-02 0.500E-02
    +0.000E+00 0.000E+00 0.0 0.0 0.0 0.0 0.0 0.0 0.0 +0.000E+00
    InGaAs_GaAs ternary GaAs Indium Gallium Arsinide strained on GaAs

    0.000E+00 0.000E+00 0.000E+00 0.000E+00 +0.100E+01

    eg 0.000 1.00 0.1454E+01 -0.1102E+01 0.02E+00

    dec 0.000 1.000 0.000E+00 -0.661E+00 0.012E+00

    er 0.000 1.000 0.131E+02 0.142E+01 0.000E+00

    ed 0.000 1.000 0.580E-02 0.430E-02 0.400E-02

    ea 0.000 1.000 0.100E-01 0.000E+00 0.000E+00

    edd 0.000 1.000 0.200E+00 0.000E+00 0.000E+00

    eda 0.000 1.000 0.200E+00 0.000E+00 0.000E+00

    me 0.000 1.000 0.670E-01 -0.440E-01 0.000E+00

    val 0.000 1.000 1.000E-00 0.000E-00 0.000E+00

    mh 0.000 1.000 0.480E+00 -0.800E-01 0.000E+00

    mlh 0.000 1.000 0.800E-01 0.000E+00 0.000E+00

    emo 0 1 4000 0 0

    hmo 0 1 400 0 0

    tn 0 1 1e-10 0 0

    tp 0 1 1e-10 0 0
    pol 0.000 1.000 0.000E+00 0.000E+00 0.000E+00

    al 0 1 0 0 0

    endInGaAs

    InAs binary gaas


    +3.720E-01 -6.490E-01 +1.450E+01 +2.300E-02 +1.000E+00 +4.000E-01 +8.000E-02
    +1.500E+00 +5.000E-02 +5.000E-02 +1.000E-01
    +0.000E+00 +0.000E+00 +0.000E+00 +0.000E+00 +1.000E+04 +5.000E+02 +1.000E-10
    +1.000E-10 +0.000E+00 0.0E+00

    #GaN material parameters----------------------------------> Start


    GaN binary GaN

    +3.400E+00 +0.000E-01 +9.500E+00 +2.000E-01 +1.000E+00 +7.500E-01 +7.500E-01


    +1.500E-02 +2.300E-01 -5.000E+00 -5.000E+00
    +0.000E-01 +0.000E-01 +0.000E-01 +0.000E-01 +4.000E+02 +7.000E+00 +1.000E-09
    +1.000E-09 +2.000E-06 +4.000E+05
    AlGaN ternary GaN Aluminum Gallium Nitride on GaN

    0.000E-01 0.000E-01 0.000E-01 0.000E-01

    eg .000 1.000 3.400E+00 2.800E+00 0.000E-01

    dec .000 1.000 0.000E-01 2.240E+00 0.000E-01

    er .000 1.000 9.500E+00 -1.000E+00 0.000E-01

    ed .000 1.000 1.500E-02 0.000E-01 0.000E-01

    ea .000 1.000 2.300E-01 0.000E-01 0.000E-01

    edd .000 1.000 -5.000E+00 0.000E-01 0.000E-01

    eda .000 1.000 -5.000E+00 0.000E-01 0.000E-01

    me .000 1.000 2.000E-01 0.000E-01 0.000E-01

    val .000 1.000 1.000E+00 0.000E-01 0.000E-01

    mh .000 1.000 7.500E-01 0.000E-01 0.000E-01

    mlh .000 1.000 7.500E-01 0.000E-01 0.000E-01

    emo .000 1.000 4.000E+02 0.000E-01 0.000E-01

    hmo .000 1.000 7.000E+00 0.000E-01 0.000E-01

    tn .000 1.000 1.000E-09 0.000E-01 0.000E-01

    tp .000 1.000 1.000E-09 0.000E-01 0.000E-01

    pol .000 1.000 2.000E-06 8.400E-06 1.900E-06


    al .000 1.000 4.000E-05 0.000E-01 0.000E-01

    endAlGaN

    InGaN ternary GaN Indium Gallium Nitride on GaN

    0.000E-01 0.000E-01 0.000E-01 0.000E-01

    eg .000 1.000 3.400E+00 -2.600E+00 0.000E-01

    dec .000 1.000 0.000E-01 -1.820E-00 0.000E-01


    er .000 1.000 9.500E+00 0.000E-01 0.000E-01

    ed .000 1.000 1.500E-02 0.000E-01 0.000E-01

    ea .000 1.000 2.300E-01 0.000E-01 0.000E-01

    edd .000 1.000 -5.000E+00 0.000E-01 0.000E-01

    eda .000 1.000 -5.000E+00 0.000E-01 0.000E-01

    me .000 1.000 1.000E-01 0.000E-01 0.000E-01

    val .000 1.000 1.000E+00 0.000E-01 0.000E-01

    mh .000 1.000 7.500E-01 0.000E-01 0.000E-01

    mlh .000 1.000 7.500E-01 0.000E-01 0.000E-01

    emo .000 1.000 4.000E+02 0.000E-01 0.000E-01

    hmo .000 1.000 1.000E+01 0.000E-01 0.000E-01

    tn .000 1.000 1.000E-09 0.000E-01 0.000E-01

    tp .000 1.000 1.000E-09 0.000E-01 0.000E-01

    pol .000 1.000 2.000E-06 -1.380E-05 -4.900E-06

    al .000 1.000 1.000E+00 0.000E-01 0.000E-01

    endInGaN

    PGaN binary GaN This

    +3.400E+00 +0.000E-01 +9.500E+00 +2.000E-01 +1.000E+00 +1.700E+00 +1.000E+00


    +1.500E-02 +1.600E-01 -5.000E+00 -5.000E+00
    +1.000E+15 +0.000E-01 +0.000E-01 +0.000E-01 +4.000E+02 +1.500E+01 +1.000E-09
    +1.000E-09 +2.000E-06 +4.000E+05
    #GaN material parameters----------------------------------> End

    #Ga2O3 material parameters----------------------------------> Start


    Ga2O3 binary Ga2O3

    +4.8500E+00 +0.000E-01 +10.200E+00 +3.4000E-01 +1.000E+00 +10.00E-01 +10.00E-01


    +1.500E-02 +2.300E-01 +2.425000E+00 +2.425000E+00
    +0.000E-01 +0.000E-01 +0.000E-01 +0.000E-01 +4.000E+02 +7.000E+00 +1.000E-09
    +1.000E-09 +2.000E-06 +4.000E+05

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