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“Field Effect Transistor Symbols, Advantages and Application ”

This micro project report is submitted to

Agnihotri School of Technology, Wardha

(Polytechnic)

(An Institute Affiliated to M.S.B.T.E. Mumbai)

In partial fulfillment of the requirement for the award

Of

Diploma in Computer Engineering

By

Mr.Anujkumar Yadav Ms.Dharti Kaikade

Mr.Nilesh Rangari Ms.Samruddhi Agnihotri

Mr.Sahil Samarth Ms.Jayashre Sinkar

Under the Guidance of

Mr.Manish Wadhafala

Department of Computer Engineering

AGNIHOTRI SCHOOL PF TECHNOLOGY,RAMNAGAR,

BAPUJIWADI,WARDHA-442001

(2018-19)
JAY MAHAKALI SHIKSHAN SANSTHA,
AGNIHOTRI SCHOOL OF TECHNOLOGY, WARDHA
INDEX
Sr Name of chapter Page Date of Sign of
no. No. Submission teacher

1. Introduction of FET

2. Symbols of FET

3. Advantages of FET

4. Applications of FET

5.

6.

7.
CERTIFICATE OF AN APPROVAL
This is certify that the micro project report entitled on “Field Effect Transistor
Symbols, Advantages and Application” has been successfully completed by
Mr.Nilesh Rangari, Mr.Sahil Samarth, Mr.Anujkumar Yadav, Ms.Dharti
Kaikade, Mr.Samruddhi Agnihotri, Ms.Jayashre Sinkar under the guidance of
Mr.Manish Wadhafala Submitted to Agnihotri School of Technology, Wardha
(An institution Affiliated to M.S.B.T.E. Mumbai) in recognition to the partial
fulfillment for award of the Diploma in Computer Engineering.

Signature

Mr.Manish Wadhafala

Project Guide

Signature Signature

Ms.Vaishali Lode Prof.C.B. Kothare

H.O.D Principal

Department of Basic Science AST, Wardha

AST, Wardha
Field Effect Transistor
So far we have discussed the circuit applications of ordinary transistors, in which both holes and
electrons take part. This is the reason that these are sometimes called the bipolar transistors.
Such transistors have two main drawbacks namely low input impedance because of forward
biased emitter junction and considerable noise level. Both of these drawbacks have been
overcome, to a great extent in the field effect transistor (FET), which is an electric field (or
voltage) controlled device. FET’s because of possessing all the advantages that tubes and
ordinary transistors (BJTs) have, are replacing both the vacuum tubes and BJTs in applications.

Field-Effect-Transistor-FET

A field-effect transistor (FET) is a three terminal (namely drain, source and gate) semiconductor
device in which current conduction is by only one type of majority carriers (electrons in case of
an N-channel FET or holes in a P-channel FET). It is also sometimes called the uni-polar
transistor. Unlike a biploar transistor a FET requires virtually no input (bias signal) current and
gives anextremely high input resistance -most important advantage over a BJT. Either BJT or
FET devices can be used to operate in amplifier circuits or other similar electronic circuits, with
different bias considerations.
Advantages of FET
One advantage of the FET is its high gate to main current resistance, on the order of 100 MΩ or
more, thus providing a high degree of isolation between control and flow. Because base current
noise will increase with shaping time, a FET typically produces less noise than a bipolar junction
transistor (BJT), and is thus found in noise sensitive electronics such as tuners and low-noise
amplifiers for VHF and satellite receivers. It is relatively immune to radiation. It exhibits no
offset voltage at zero drain current and hence makes an excellent signal chopper. It typically
has better thermal stability than a BJT.[4] Because they are controlled by gate charge, once the
gate is closed or opened, there is no additional power draw, as there would be with a bipolar
junction transistor or with non-latching relays in some states. This allows extremely low-power
switching, which in turn allows greater miniaturization of circuits because heat dissipation
needs are reduced compared to other types of switches.
Application Of FET

1. Low Noise Amplifier


Noise is an undesirable disturbance super-imposed on a useful signal. Noise interferes with the
information contained in the signal; the greater the noise, the less the information. For
instance, the noise in radio-receivers develops crackling and hissing which sometimes
completely masks the voice or music. Similarly, the noise in TV receivers produces small white
or black spots on the picture; as evere noise may wipe out the picture. Noise is independent of
the signal strength because it exists even when the signal is off.

Every electronic device produces a certain amount of noise but FET is a device which causes
very little noise. This is especially important near the front-end of the receivers and other
electronic equipment because the subsequent stages amplify front-end noise along with the
signal. If FET is used at the front-end, we get less amplified noise (disturbance) at the final
output.

2. Buffer Amplifier

A buffer amplifier is a stage of amplification that isolates the preceding stage from the following
stage. Source follower (common drain) is. used as a buffer amplifier. Because of the high input
impedance and low output impedance, a FET acts an excellent buffer amplifier, as shown in the
figure. Owing to high input impedance almost all the output voltage of the preceding stage
appears at the input of the buffer amplifier and owing to low output impedance all the output
voltage from the buffer amplifier reaches the input of the following stage, even there may be a
small load resistance.

3. Cascode Amplifier
Circuit diagram for a cascode amplifier using FET is shown in figure. A common source amplifier
drives a common gate amplifier in it.
Cascode amplifier circuit

The cascode amplifier has the same voltage gain as a common source (CS) amplifier. The main
advantage of the cascode connection is its low input capacitance which is considerably less than
the input capacitance of a CS amplifier. It has high input resistance which is also a desirable
feature.

4. Analog Switch
FET as an analog switch is shown in figure. When no gate voltage is applied to the FET i.e. VGS =
0, FET becomes saturated and it behaves like a small resistance usually of the value of less than
100 ohm and, therefore, output voltage becomes equal to

VOUT = {RDS/ (RD + RDS (ON))}* Vin


JFET-analog-switch

Since RD is very large in comparison to RDS 0N), so Vout can be taken equal to zero.

When a negative voltage equal to VGS (OFF) is applied to the gate, the FET operates in the cut-off
region and it acts like a very high resistance usually of some mega ohms. Hence output voltage
becomes nearly equal to input voltage.

5. Chopper
A direct-coupled amplifier can be built by leaving out the coupling and bypass capacitors and
connecting the output of each stage directly to the input of next stage. Thus direct current is
coupled, as well as alternating current. The major drawback of this method is an occurrence of
drift, a slow shift in the final output voltage produced by supply transistor, and temperature
variations.

The drift problem can be overcome by employing a chopper amplifier as illustrated in the
figure.

Chopper Amplifier

(a). Here input dc voltage is chopped by a switching circuit. The output of the chopper is a
square wave ac signal having peak value equal to that of input dc voltage, V DC. This ac signal can
be amplified by a conventional ac amplifier without any problem of drift. Amplified output can
then be ‘peak detected’ to recover the amplified dc signal.

A square wave is applied to the gate of a FET analog switch to make it operate like a chopper, as
illustrated in the other figure. The gate square wave is negative-going swing from 0 V to at least
VGS (off)- This alternately saturates and cuts-off the JFET. This output voltage is a square wave
varying from +VDC to zero volt alternately.

If the input signal is a low-frequency ac signal, it gets chopped into the ac waveform as shown
in last figure (c). This chopped signal can now be amplified by an ac amplifier that is drift free.
The amplified signal can then be peak-detected to recover the original input low-frequency ac
signal. Thus both dc and low-frequency ac signals can be amplified by using a chopper amplifier.

6. Multiplexer

FET multiplexer

An analog multiplexer, a circuit that steers one of the input signals to the output line, is shown
in the figure. In this circuit, each JFET acts as a single-pole-single-throw switch. When the
control signals (Vv V2 and V3) are more negative than VGS(0FF) all input signals are blocked. By
making any control voltage equal to zero, one of the inputs can be transmitted to the output.
For instance, when Vx is zero, the signal obtained at the output will be sinusoidal. Similarly,
when V2 is zero, the signal obtained at the output will be triangular and when V3 is zero, the
output signal will be square-wave one. Normally, only one of the control signals is zero.

7. Current Limiter
JFET current limiting circuit is shown in the figure. Almost all the supply voltage, therefore,
appears across the load. When the load current tries to increase to an excessive level (may be
due to short-circuit or any other reason), the excessive load current forces the JFET into the
active region, where it limits the current to 8 mA. The JFET now acts as a current source and
prevents excessive load current.

A manufacturer can tie the gate to the source and package the JFET as a two terminal device.
This is how constant-current diodes are made. Such diodes are also called current-regulator
diodes.

8. Phase Shift Oscillators


FET-phase shift oscillator

JFET can incorporate the amplifying action as well as feedback action. It, therefore, acts well as
a phase shift oscillator. The high input impedance of FET is especially very valuable in phase-
shift oscillators in order to minimize the loading effect. A typical phase shift oscillator
employing N-channel JFET is shown in the figure.

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