Ordering number : ENA0435 2SC6099

SANYO Semiconductors
DATA SHEET

2SC6099 NPN Epitaxial Planar Silicon Transistor

High-Voltage Switching Applications

Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.

Features
• Adoption of FBET, MBIT process.
• High current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 120 V
Collector-to-Emitter Voltage VCES 120 V
Collector-to-Emitter Voltage VCEO 100 V
Emitter-to-Base Voltage VEBO 6.5 V
Collector Current IC 2 A
Collector Current (Pulse) ICP 3 A
Base Current IB 400 mA
0.8 W
Collector Dissipation PC
Tc=25°C 15 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=80V, IE=0A 1 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 µA
DC Current Gain hFE VCE=5V, IC=100mA 300 600
Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
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nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82306 / 62006EA MS IM TB-00002424 No. A0435-1/4

 2SC6099
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Gain-Bandwidth Product fT VCE=10V, IC=300mA 300 MHz
Output Capacitance Cob VCB=10V, f=1MHz 13 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=100mA 110 165 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA 0.9 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0A 120 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0Ω 120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 100 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0A 6.5 V
Turn-ON Time ton See specified Test Circuit. 40 ns
Storage Time tstg See specified Test Circuit. 1100 ns
Fall Time tf See specified Test Circuit. 40 ns

Package Dimensions Package Dimensions

unit : mm unit : mm
7518-003 7003-003

6.5 2.3 6.5 2.3

5.0 0.5 5.0 0.5
1.5

1.5
4 4
7.0

7.0
5.5

5.5

1.2
0.85 0.85 0.5
0.7
2.5
1.2
0.8
0.8
1.6

1 2 3
7.5

0.6 0.5 0.6 0 to 0.2

1 : Base 1 : Base
1.2
2 : Collector 2 : Collector
1 2 3
3 : Emitter 3 : Emitter
4 : Collector 4 : Collector
2.3 2.3

2.3 2.3 SANYO : TP SANYO : TP-FA

Switching Time Test Circuit

IB1
PW=20µs
OUTPUT
D.C.≤1% IB2

INPUT VR10 RB
RL

50Ω
+ +
100µF 470µF

VBE= --5V VCC=50V

10IB1= --10IB2=IC=0.5A

No. A0435-2/4
 2SC6099
IC -- VCE IC -- VBE
2.0 2.0
A 60mA VCE=5V
80m

mA
1.8 1.8

100
1.6 40mA 1.6
Collector Current, IC -- A

Collector Current, IC -- A
1.4 1.4

1.2 20mA 1.2

1.0 1.0
10mA
0.8 0.8
5mA

5 °C
0.6 0.6

--25°C
25°C
2mA

Ta=7
0.4 0.4

0.2 0.2
IB=0mA
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT11125 Base-to-Emitter Voltage, VBE -- V IT11126
hFE -- IC f T -- IC
1000 7
VCE=5V VCE=10V
7 5

Gain-Bandwidth Product, f T -- MHz

5
Ta=75°C
3
25°C
DC Current Gain, hFE

3
--25°C 2
2

100
100
7
7
5
5

3 3

2 2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC -- A IT11127 Collector Current, IC -- A IT11118
Cob -- VCB VCE(sat) -- IC
100 3
f=1MHz IC / IB=10
2
7
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF

5
0.1

7
3
5
°C
Collector-to-Emitter

2 75
3
Ta=
2 5°C
--2
10
25°
C
0.01
7
7
5
5

3 3
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector-to-Base Voltage, VCB -- V IT11119 Collector Current, IC -- A IT11128
VBE(sat) -- IC ASO
3 7
IC / IB=10 5 ICP=3A <10µs
3
10 50
2 ms 0µ
Saturation Voltage, VBE(sat) -- V

10

2 IC=2A 1m s
0µ

1.0 10
Collector Current, IC -- A

0m s
s

7
5 DC s
3 op
2 era
tio
1.0 0.1 n
Ta= --25°C 7
Base-to-Emitter

5
7 3

75°C
2

25°C 0.01
5 7
5
3
2
Ta=25°C
3 0.001
Single Pulse
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC -- A IT11121 Collector-to-Emitter Voltage, VCE -- V IT11129

No. A0435-3/4
 2SC6099
ASO PC -- Ta
5 0.9
ICP=3A <10µs
3
50 0.8

100
2 0µ
10 s

µs
IC=2A

Collector Dissipation, PC -- W
m 0.7
s
Collector Current, IC -- A

1.0
7 10

1m
0m 0.6
5
s

s
3 0.5

DC
2
0.4

ope
rati
0.1
7 0.3

on
5
0.2
3
2 Tc=25°C 0.1

0.01
Single Pulse 0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT11130 Ambient Temperature, Ta -- °C IT11131
PC -- Tc
17.5

15.0
Collector Dissipation, PC -- W

12.5

10.0

7.50

5.00

2.50

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C IT11132

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This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.

PS No. A0435-4/4