SEMICONDUCTOR KPS8N65D

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description

This Super Junction MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for active power factor C D L
A 6.60 +_ 0.20
correction and switching mode power supplies. B _ 0.20
6.10 +
C 5.34 +_ 0.30
D _ 0.20
0.70 +
B E 2.70 +_ 0.15
FEATURES F _ 0.10
2.30 +
・VDSS=650V, ID=8A G 0.96 MAX
H 0.90 MAX
H
・Drain-Source ON Resistance : J
E J _ 0.20
1.80 +
G N K _ 0.10
2.30 +
RDS(ON)(Max)=0.58Ω @VGS=10V L 0.50 +_ 0.10
F F M M _ 0.10
0.50 +
・Qg(typ.)= 20nC N 0.70 MIN
O 0.1 MAX

MAXIMUM RATING (Tc=25℃) 1 2 3 1. GATE

2. DRAIN
3. SOURCE
SYMBO
CHARACTERISTIC RATING UNIT O
L

Drain-Source Voltage VDSS 650 V

Gate-Source Voltage VGSS ± 30 V
DPAK (1)
@TC=25℃ 8*
ID
Drain Current @TC=100℃ 5* A
Pulsed (Note1) IDP 18*
Single Pulsed Avalanche Energy EAS 50 mJ
(Note 2)
Repetitive Avalanche Energy EAR 2.3 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25℃ 73.5 W
PD
Dissipation Derate above 25℃ 0.59 W/℃
Maximum Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.7 ℃/W
Thermal Resistance,
RthJA 62.5 ℃/W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.

PIN CONNECTION
D

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 KPS8N65D

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient Δ BVDSS/Δ Tj ID=250μA, Referenced to 25℃ - 0.6 - V/℃
Drain Cut-off Current IDSS VDS=650V, VGS=0V - - 10 ㎂
Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V
Gate Leakage Current IGSS VGS=± 30V, VDS=0V - - ± 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4A - 0.50 0.58 Ω
Dynamic
Total Gate Charge Qg - 20 -
VDS=520V, ID=8A
Gate-Source Charge Qgs - 2.8 - nC
VGS=10V (Note 5)
Gate-Drain Charge Qgd - 13 -
Turn-on Delay time td(on) - 17 -
VDD=325V
Turn-on Rise time tr - 40 -
ID=8A ns
Turn-off Delay time td(off) - 60 -
RG=25Ω (Note4,5)
Turn-off Fall time tf - 22 -
Input Capacitance Ciss - 500 -
Output Capacitance Coss VDS=40V, VGS=0V, f=1.0MHz - 50 - pF
Reverse Transfer Capacitance Crss - 5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 8
VGS<Vth A
Pulsed Source Current ISP - - 32
Diode Forward Voltage VSD IS=8A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=8A, VGS=0V, - 280 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/μs - 2.1 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =23.5mH, IS=2A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 8A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 10㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.

Marking

1
KPS8N65
D 001 2

1 PRODUCT NAME

2 LOT NO

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 KPS8N65D

Fig1. ID - VDS Fig2. ID - VGS

2
10 VDS=20V
1
10
Drain Current ID (A)

Drain Current ID (A)

VGS=7,10V
1
10
100 C 25 C
VGS=5V
0
10
0
10

-1 -1
10 10
-1 0 1 2
10 10 10 10 0 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.3 1.2
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
1.0
1.2

0.8
1.1 VGS=7V
0.6
VGS=10V
1.0
0.4

0.9 0.2
0 25 50 75 100 125 150 0 2 4 6 8 10

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

2
10 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 4A
2.5
Normalized On Resistance

1 2.0
10 100 C
25 C
1.5

0 1.0
10

0.5

10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

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Fig 7. C - VDS Fig8. Qg- VGS

104 12
ID=8A

Gate - Source Voltage VGS (V)

10
103 Ciss
Capacitance (pF)

8
VDS = 520V
2 6
10 Coss

4
101 Crss
2

1 0
0 10 20 30 40 0 4 8 12 16 20 24

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

102
Drain Current ID (A)

101
10‫ט‬

100‫ט‬
100
1‫י‬
Operation in this
area is limited by RDS(ON) 10‫י‬
10-1
Tc= 25 C DC
Tj = 150 C

10 -2 Single pulse
100 101 102 103
Drain - Source Voltage VDS (V)

Fig10. Transient Thermal Response Curve

101
Transient Thermal Resistance ( C/W)

Duty=0.5
100
0.2
0.1 PDM
0.05
t1
10-1 0.02
0.01 t2
Single Pulse
- Rth(j-c) = 1.7 C/W Max.
- Duty Factor, D= t1/t2
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

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Fig11. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig12. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig13. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

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Fig14. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

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