Basic Electrical and Electronics Engineering Sukhija

&Nagsarkar
Scholastic Capability Test

A: Introduction

The purpose of the Scholastic Capability Test (SCT) is to enable the reader to quickly measure
his/her understanding of the fundamentals of electrical and electronic engineering based on a
complete study of the book. The SCT will enable the reader to measure his/her understanding of
various topics.

A chapter wise lattice which shows the question numbers according to the chapters to which they
belong has been included to enable the reader to gauge his/her performance and identify areas of
strengths and weaknesses.

B: Instructions

The SCT consists of 28 Objective Type questions with four choices. Read each question carefully
and select the correct answer. From the lattice, identify the chapter to which the question belongs
and accordingly put a tick mark for the answer.
After completing the SCT, compare your answers and add 1 mark for each correct answer. The
following grading may be used as a guideline for measuring your performance.

© Oxford University Press. All rights reserved Page 1

 Basic Electrical and Electronics Engineering Sukhija
&Nagsarkar

C: Objective Type Questions

1. Which of the following is not true for semiconductors?

(i) they belong to Group 4 (ii) their atomic number is 14 (iii) they have four valence electrons
(iv) none of these

2. In a bipolar junction transistor current flow occurs due to which of the following reasons?
(i) electrons only (ii) holes only (iii) both electrons and holes (iv) none of these

3. Which of the following is the correct association of terminals between a JFET and a BJT?
(i) D and C (ii) S and E (iii) G and B (iv) all of these

4. Point A has an absolute potential of 20 V and point B is at an absolute potential of – 5 V. VBA

has a value of
(i) – 25 V (ii) 15 V (iii) 25 V (iv) none of these

© Oxford University Press. All rights reserved Page 2

 Basic Electrical and Electronics Engineering Sukhija
&Nagsarkar

5. As the current supplied by a practical voltage source increases, its voltage

(i) remains constant (ii) increases linearly (iii) decreases linearly (iv) decreases exponentially

6. In an N-type channel VGS = 0 and VDS is increased. Which of the following does not happen?
(i) depletion region increases (ii) decrease in drain current
(iii) ID reaches a limiting value (iv) none of these

7. The effect of temperature on metals and insulating materials is that the

(i) resistance of both increases (ii) resistance of both decreases (iii) resistance of metals decreases
and that of insulating materials increases (iv) resistance of metals increases and that of insulating
materials decreases

8. The alternating current system was put into practical use in

(i) 1820 (ii) 1880 (iii) 1886 (iv) 1896

9. Which of the following does not describe the region in the N-type region of a PN junction
diode?
(i) It has a depletion of electrons (ii) it is positively charged (iii) it is negatively charged
(iv) all of these

10. In a symbolic representation of a PNP transistor which of the following is correct?

(i) inward pointing arrow head on the emitter
(ii) outward pointing arrow head on the emitter
(iii) inward pointing arrow head on the collector
(iv) outward pointing arrow head on the collector

11. In the output characteristics of a JFET, the ohmic region lies

(i) to the left of the pinch-off locus (ii) on the pinch-off locus
(iii) to the right of the pinch-off locus (iv) does not exist

© Oxford University Press. All rights reserved Page 3

 Basic Electrical and Electronics Engineering Sukhija
&Nagsarkar
12. The concept of representing a sinusoidal quantity by a constant amplitude line rotating at a
frequency was introduced by
(i) Euler (ii) De Moivre (iii) Lagrange (iv) Steinmetz

13. The amplification factor of a common source JFET amplifier is given by

14. A silicon diode conducts when it is forward biased at 750 mV. If the forward and reverse
resistances of the diode are 15 Ω and infinity respectively which of the following represents the
diode current when a sine wave of maximum 12 V is applied to the diode?
(i) 0 mA (ii) 30 mA (iii) 80 mA (iv) ∞

15. For a germanium transistor which of the following is not a sufficient magnitude of VBB to
provide the necessary forward emitter-base bias?
(i) VBB = 0.7 V (ii) 0.7 V > VBB > 0.2 V (iii) VBB < 0.2 V (iv) none of these

16. Two resistances of 5 Ω and 20 Ω are connected in parallel. The parallel combination is
connected in series with a 1 Ω resistance and this series parallel combination is connected across a
dc source of 100 V. The current supplied by the source is
(i) 25 A (ii) 20 A (iii) 5 A (iv) 4 A

17. When the frequency of the applied voltage is varied in a capacitive circuit, the following
conditions apply:
(i) when f = 0, current = ∞ (ii) when f = ∞, current = 0, (iii) capacitive reactance is inversely
proportional to the frequency (iv) all of these

© Oxford University Press. All rights reserved Page 4

 Basic Electrical and Electronics Engineering Sukhija
&Nagsarkar
18. The unit of inductance is henry. It is represented by
(i) V/A (ii) V sec/A (iii) V s (iv) V/sec

19. When a BJT functions as an amplifier, which of the following is controlled?

(i) collector current (ii) emitter current (iii) base current (iv) all of these

20. In a network having N nodes, the number of independent equations required to solve the
network, with ground as the reference node, is
(i) 2N (ii) 2N – 1 (iii) N (iv) N – 1

21. Which of the following is not a property of a JFET?

(i) bipolar device (ii) low input resistance (iii) medium switching speed (iv) all of these

22. Which of the following change is likely to occur in the Q-point when the collector current
increases?
(i) no change (ii) shifts to the saturation region (iii) shifts to the cut off region
(iv) oscillates in the active region

23. From the point of view of electrical utilities, which of the following are of economic
importance?
(i) power (ii) reactive power (iii) apparent power (iv) all of these

24. Which of the following represents the zener effect in a PN junction diode?
(i) creation of a high electric field (ii) tearing of the electrons from the covalent bond (iii) collision
of accelerated electrons with electrons (iv) all of these

25. Which of the following represents the frequency of the ripple voltage when a sinusoidal voltage
wave of 200 Hz is applied to a full wave rectifier circuit with a capacitor connected in parallel
across the load?
(i) 0 (ii) 200 (iii) 400 (iv) none of these

© Oxford University Press. All rights reserved Page 5

 Basic Electrical and Electronics Engineering Sukhija
&Nagsarkar
26. Which of the following theorems helps in simplifying computations when the load across a
circuit is varying?
(i) superposition (ii) Norton’s (iii) Thevenin’s (iv) maximum power transfer

27. Which of the following conditions is common to both series and parallel resonance?
(i) impedance is minimum (ii) power factor is unity (iii) power is low
(iv) Q factor depends on voltage amplification

28. In an RC series circuit, the voltage is allowed to increase at its initial rate of rise. Which of the
following gives the time at which its voltage becomes equal to the supply voltage?
(i) t = 5τ (ii) t = 3τ (iii) t = τ (iv) 1/τ

Answers
1. (iv) 2. (iii) 3. (iv) 4. (i) 5. (iii)
6. (ii) 7. (iv) 8. (iii) 9. (iii)
10. (i) 11. (i) 12. (iv) 13. (ii) 14 (ii)
15. (iii) 16. (ii) 17. (iv) 18. (ii) 19. (i)
20. (iii) 21. (iv) 22. (ii) 23. (iv) 24. (iv)
25. (iii) 26. (iii) 27. (ii) 28. (iii)

© Oxford University Press. All rights reserved Page 6

 Basic Electrical and Electronics Engineering Sukhija
&Nagsarkar
Chapter-wise Lattice

Chapter 1
Question no 4 7 18
Answer no

Chapter 2
Question no 5 16 20 26 28
Answer no

Chapter 3
Question no 8 12 17 23 27
Answer no

Chapter 4
Question no 1 9 14 24 25
Answer no

Chapter 5
Question no 2 10 15 19 22
Answer no

Chapter 6
Question no 3 6 11 13 21
Answer no

© Oxford University Press. All rights reserved Page 7