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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 60
• 175 °C Operating Temperature Available
RDS(on) (Ω) VGS = 10 V 0.028
• Fast Switching RoHS*
Qg (Max.) (nC) 67 COMPLIANT
Qgs (nC) 18 • Ease of Paralleling
Qgd (nC) 25 • Simple Drive Requirements
Configuration Single • Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications at power dissipation
S levels to approximately 50 W. The low thermal resistance
D S
G and low package cost of the TO-220AB contribute to its
N-Channel MOSFET wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRFZ44PbF
Lead (Pb)-free
SiHFZ44-E3
IRFZ44
SnPb
SiHFZ44
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
L
VDS
VDS
Vary tp to obtain tp
required IAS VDD
RG D.U.T. +
V DD VDS
-
IAS
10 V
tp 0.01 Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms