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Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol Parameter . Rating Units
VDS Drain-Source Voltage 45 V
VGS Gate-Source Voltage +20 / -12 V
4
ID@TC=25℃ Drain Current (Chip), VGS @ 10V 180 A
3
ID@TA=25℃ Drain Current, VGS @ 10V 40 A
3
ID@TA=70℃ Drain Current, VGS @ 10V 32 A
1
IDM Pulsed Drain Current 400 A
PD@TC=25℃ Total Power Dissipation 104 W
3
PD@TA=25℃ Total Power Dissipation 5 W
5
EAS Single Pulse Avalanche Energy 295 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=20A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=20A, VGS=0V, - 45 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 65 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2 o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
4.Package limitation current is 100A .
5.Starting Tj=25oC , VDD=30V , L=0.3mH , RG=25Ω
2
AP4N1R8CMT-A
320 200
240
160
80
80
40
0 0
0 1 2 3 4 0 0 1 1 2 2
2.2 2.0
I D = 20 A I D =20A
T C =25 C o V G =10V
2
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
1.8
1.6 1.2
.
1.4
0.8
1.2
1 0.4
2 4 6 8 10 -100 -50 0 50 100 150
I D =1mA
1.6
Normalized VGS(th)
10
IS(A)
1.2
T j =150 o C T j =25 o C
0.8
0.4
0.1 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150
3
AP4N1R8CMT-A
8 12000
f=1.0MHz
I D = 20 A
V DS =20V 10000
VGS , Gate to Source Voltage (V)
6
C iss
8000
C (pF)
4 6000
4000
2000
C oss
0 0
C rss
0 20 40 60 80 100 1 11 21 31 41 51
1000 1
area limited by
RDS(ON)
100 10us
0.2
ID (A)
100us 0.1
.
10 0.1
0.05
PDM
0.02
t
0.01
T
1
1ms Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
T C =25 o C 10ms
Single Pulse DC
0.1 0.01
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
200 240
160
120
Limited by package
120
80
80
40
40
0 0
25 50 75 100 125 150 0 1 2 3 4 5 6
o
T C , Case Temperature ( C) V GS , Gate-to-Source Voltage (V)
Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics
Temperature
4
AP4N1R8CMT-A
2 120
I D =1mA
100
1.6
80
1.2
60
0.8
40
0.4
20
0 0
-100 -50 0 50 100 150 0 50 100 150
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation
Temperature
10
T j =25 o C
8
RDS(ON) (mΩ)
4
.
2 4.5V
V GS =10V
0
0 20 40 60 80 100 120
5
AP4N1R8CMT-A
MARKING INFORMATION
Part Number
4N1R8C-A
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