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DFN 3x3 EP D
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1 8
2 7
3 6
4 5
G
Pin 1 S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.2 5 °C/W
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
120 100
10V 5V
VDS=5V
100 4.5V 80
6V
80
60
4V
ID(A)
ID (A)
60
40
40 3.5V
20
20 125°C 25°C
VGS=3V
0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
12 1.8
VGS=10V
Normalized On-Resistance ID=20A
10 1.6
VGS=4.5V
RDS(ON) (mΩ)
8 1.4
17
VGS=4.5V
5
ID=20A
6 1.2 2
VGS=10V 10
4 1
2 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
(Note E)
18
Voltage (Note E)
25 1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
125°C
25°C
RDS(ON) (mΩ)
15 1.0E-01
IS (A)
125°C 1.0E-02
10
1.0E-03
5
25°C 1.0E-04
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 1600
VDS=15V
ID=20A 1400
8 Ciss
1200
Capacitance (pF)
1000
VGS (Volts)
6
800
4 600
400
2 Coss
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 200
TJ(Max)=150°C
100.0 10µs 160 TC=25°C
RDS(ON) 10µs
limited
ID (Amps)
Power (W)
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
ZθJC Normalized Transient
RθJC=5°C/W 40
1
0.1
PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
100 30
TA=25°C
IAR (A) Peak Avalanche Current
25
10
TA=125°C 5
10 0
1 10 100 1000 0 25 50 75 100 125 150
Time in avalanche, tA (µs) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)
50 10000
TA=25°C
40
1000
Current rating ID(A)
17
Power (W)
30
100
5
2
20
10
10
10
0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
Thermal Resistance
1 RθJA=75°C/W 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds