TECHNICAL PRODUCT INFORMATION

Microstrip 2001
Recommended Process
Description
For most process applications, Microstrip
FUJIFILM Microstrip ®2001 is a non-chlorinated, non-phenolic,
2001 can be used to strip positive photoresist
stripper for removing positive photoresists. It can be used with silicon,
under standard conditions.
silicon dioxide, silicon nitride, titanium, tungsten aluminum and its
alloys 1 and other metal substrates. It will not stain aluminum,
However, some high temperature photoresist
aluminum silicon alloys, titanium or tungsten, even with moisture
treatments such as deep ultraviolet radiation
present.
and high dose, high current ion implants may
Microstrip 2001 provides good bath stability with low evaporation
require elevating the stripping temperature
rates, and it is compatible with ultrasonic cleaning systems. Its low and implementation of ultrasonic applications.
viscosity minimizes drag-out losses and trace metals are typically less
than 20 ppb. Resist Hardbake from 105°C - 140°C
1. Heat two baths of Microstrip 2001 to
Waste Disposal 70°C±5°C.
While the ingredients of this product may not meet RCRA 2 criteria for 2. Insert wafers in a carrier and immerse in
classification as a hazardous waste material, it is the responsibility of each bath for 5 to 15 minutes using mild
the user to determine the RCRA requirements at the time of disposal.
agitation.
This is because product users, processes, transformation, etc. may
3. Rinse in deionized water to
render the resulting material hazardous.
18 MEGOHM-CM resistivity.
4. Spin dry.
Safety
Consult the product Material Safety Data Sheet (MSDS). D.O.T. Note: For wafers that have been subjected to
hazard classification: Corrosive Liquid NOS UN1760. higher hardbake temperatures, deep UV
stabilization or high current ion implants elevate the
Additional Information bath temperature to 90°C. If an incomplete strip is
Microstrip 2001 is compatible with materials made of Teflon®, observed, the use of an ultrasonic application
PYREX®, stainless steel, polypropylene, aluminum and quartzware. during the strip process may be necessary.
Typical throughput of Microstrip 2001to be at least 1400
wafers/gallon.
Loss of volume due to evaporation, drag out, etc. over a twenty four-
hour period is approximately eight percent.

Specifications:

Package Size 4X1 Gal., 55 Gal Drums

Appearance Clear, almost colorless
Flashpoint 98.9ºC
Filtration 0.2 micron (absolute)
Trace Metals Na, Fe, Al, Cu, Ca, Mg, Ni, Zn, K <20ppb
Fe <40ppb
Chemistry:
Cyclic N substitute amine
Substitute aliphatic amine

1For Al-Cu alloy, we suggest that the wafers be inspected for the remote
possibility of galvanic conditions that may cause pitting of the metal surface.

2 Resource Conservation & Recovery Act

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