Magnetic switch (AMR sensor)

AS series

Murata Manufacturing Co.,Ltd

Product engineering sectionⅡ
S
Sensor products
d t department
d t t
Sensor products division

2009.Mar.26
1
Target Applications : Magnetic switch
Applications Operation
Mobile phone
phone, Note PC
Home electric appliances, Door Security
Opening and closing of lids and doors
DVC, White good
DVC, DSC

2
Target Applications : Rotational sensor
Magnet Magnetic flux
Sensor
N S N S N S
λ
Sensor
Motor (Index detection) output

Fluid flow

Magnet
S
Sensor N

Flow meter
Pulse encoder

3
 AMR sensor AS series
Suitable for non-contact sensor in combination with a magnet
z AMR Sensor + CMOS IC piggyback type

z Wide lineup of sensitivity, supply voltage, package size

Sensitivity : 1.5mT or 3.0mT (Typ.)
S
Supply
l voltage
lt :1
1.6
6 tto 3
3.5V
5V or 3
3.6
6 tto 6
6.0V
0V SOT23
Package : SOT23 type or SON4 type or XLP type SON4
z Following advantages compared to Hall IC IC*
XLP
*Hall IC has become popular as magnetic switch. Sensor
・High sensitivity
- We also have the products which has same sensitivity with Hall IC.
T enable
・To bl tto make
k compactt customer's
t ' products
d t with
ith thin
thi magnett
- Our sensor can be used with thin magnet!
・More flexible for design (mount location)
- Our sensor has wide detection area

z Competitive price
- Small chip size with optimized circuit

z Independent of magnetic pole Magnet

4
New Product Now on sale
• XLP package

1.1
9 Halogen free & RoHS Directive
compliance

0.2
0.9

0.5
9 Development schedule
04
0.4 CS samples : Now
0.5 Max
Unit：mm

• Flexibility in sensitivity design T＝25ºC,VDD＝1.8V (mT)

H→L L→H
Min. Typ. Max. Min. Typ. Max.
Standard sensitivity type （1.0） 1.5 2.2 0.8 1.2 （1.9）
L
Low sensitivity
iti it ttype （1 5）
（1.5） 30
3.0 45
4.5 10
1.0 25
2.5 （4 0）
（4.0）
5
Magnetic Switch General Comparison
z Merit
¾ High sensitivity & Wide detection area.
area
AMR sensor can be used with Thin/Small magnet.

z Demerit
¾ Not available in Latch type and Two output type for S and N pole.
AMR sensor can detect magnetic strength and can not detect
distinguish
g Np
pole from S ppole.

Item AMR IC GMR IC Hall IC

Standard Sensitivity
y ◎ ○ △
(<1.5mT) (<2.0mT) (<3.0mT)
Detection magnetic field Horizontal Horizontal Vertical
S/N detection
× ○ ○
(Distinguishing N pole from S pole)
Detection area Wide Wide Narrow

6
Murata Lineup
z Wide variety for diverse application
Type Murata P/N Pkg Sensitivity Sampling Supply Phase
（Typ.） Voltage
Switch AS-M05TAM-R SOT23 0.5mT 40msec 1.6～3.5V under
development
Switch AS-M15TA-R
AS M15TA R SOT23 1.5mT
1 5mT 50msec 1.6～3.5V
1 6～3 5V MP
Switch AS-M15TB-R SOT23 1.5mT 50msec 3.5～6.0V MP
Switch AS-M30TAM-R SOT23 3.0mT 40msec 1.6～3.5V under
development
Switch
S it h AS-M15NA-R
AS M15NA R SON4 1.5mT
1 5 T 50msec
50 1.6～3.5V
1 6 3 5V MP
Switch AS-M30NAM-R SON4 3.0mT 40msec 1.6～3.5V under
development
Switch AS-M15NAE-R SON4 1.5mT 12.5msec 1.6～3.5V CS sample
Switch AS-M15XA-R XLP 1.5mT 50msec 1.6～3.5V CS sample
Rotation AS-R15NA-R SON4 1.5mT Not sampling 1.6～3.5V CS sample
Rotation AS-R15NB-R SON4 1.5mT Not sampling 3.5～6.0V CS sample
Rotation AS-P15NA-R SON4 1.5mT Not sampling
p g 1.6～3.5V under
＆ Power down development

3000pcs/reel
Subject to change

7
 Magnetic Sensor Using AMR effect
AMR is a magnetic sensor of high sensitivity in a low magnetic field.
AMR = Anisotropic-Magneto-Resistance
Anisotropic Magneto Resistance

9 AMR is made of a perm alloy (Fe, Ni) thin

film resistor.

9 When a magnetic field applied to AMR, the

Resistance resistance
i t changes.
h R
Resistance
i t change
h
change ratio : 2%
depend on magnetic field strength. ( AMR
effect )
Magnetic field
9 Resistance change is about 2% form initial
０ Low magnetic
field (~6mT) value in low magnetic field and saturated in
the certain level.
level
Magnetic field strength
and a resistance rate of change 9 Resistance change in the magnetic field
will cause a change in output voltage
voltage.

8
Murata original technology
z Small chip size in comparison with competitors
・ AMR Sensor + CMOS IC piggyback type
・ Optimization of circuit design

z Classify
Cl if three
th kinds
ki d off sensitivity(1.5/3.0mT)
iti it (1 5/3 0 T) b
by th
the llaser ttrimming
i i

SiO2 （Insulating film）

AMR（Ni, Fe）

Al（Electrode）
SiO2（Insulating film）

Si (IC)

Schematic

9
 Benefit-Wide detection area in comparison with Hall IC
（Merit of AMR sensor）
Magnet N（S）
N（S） Detection
S（N） area of Hall IC
S（N）
Hall IC

Detection
Direction of
area of AMR
Sensor detection
AMR Hall IC

Hall IC AMR sensor AMR sensor

Detection Hall effect Magnetic
direction resistance Detection area for each sensor
effect

Sensor Si type Ni and Fe ・More flexible for design (Mount location)

Material （Cost effective, Low
sensitivity） - AMR sensor has wide detection area because AMR
InSb type sensor can use wide magnetic field.
（High sensitivity, Extreme
sensitivity to temperature）

Detection Magnet Vertical Horizontal

Field

Detection area Narrow Wide

10
10
Rating example : AS-M15TA-R
AS M15TA R
Item Sign Condition Min Typ Max Unit
Supply voltage VDD 1.6 1.8 3.5 V
Absolute max
max. Supply voltage VMAX VSS-0 3
VSS-0.3 － VSS＋6 0
VSS＋6.0 V
Operating magnetic field Mop H → L － 1.5 2.2 mT
Mrp L → H 0.8 1.2 － mT
High level output VOH － 0.9×VDD
0.9 VDD － － V
Low level output VOL － － － 0.1×VDD V
Operating temp. － － -40 － +85 ºC
Storage
g temp.
p － － -50 － +125 ºC
IDD 50ms IDD T＝25ºC,VDD＝1.8V
25μs
IDDON
（Typ.:1.8mA）
VOUT
IDDAVG
IDDOFF
（Typ.:1.3μA） T T
VOH
M M
(Typ.:1.5mT)
MOP
MRP
(Typ.:1.2mT)
yp
T
VOUT 12.5μs VOUT 12.5μs
H H VOL
N S
L L Mo Mrp Mrp Mo
T T p p
H→L L→H
Magnetic Electric Conversion Characteristic
Function Timing Chart
11
Rating example : AS-R15NA-R
AS R15NA R
Item Sign Condition Min Typ Max Unit
Supply voltage VDD 1.6 1.8 3.5 V
Absolute max. Supply voltage VMAX VSS-0.3 － VSS＋6.0 V
Operating magnetic field Mop H → L － 1.5 2.2 mT
Mrp L → H 0.8 1.2 － mT
High level output VOH － 0.9×VDD － － V
Low level output VOL － － － 0.1×VDD V
Operating temp. － － -40 － +85 ºC
St
Storage temp.
t － － -50
50 － +125 ºC
T＝25ºC,VDD＝1.8V
VOUT

VOH

VOL
N S
Mo Mrp Mrp Mo
p p
Function Timing Chart Magnetic Electric Conversion Characteristic
12
Package Size (SOT-23)
(SOT 23)

Detection of magnetic field

Unit : mm
13
Package Size (SON4)

Detection magnetic field

Unit : mm

14
 Benefit - Available in low-profile
low profile magnet
P: Magnetic flux
Cautions)) For reference only density simulation
Direction of calculation
Magnetic flux density simulation calculation (mT)
磁束密度計算値（mT） movement
10.0 （Ｚ） Magnetization
9.0 Magnetic flux density direction
Sensor
ｍT）

8.0
密度計算値（ｍ

T＝0.5mm
7.0
6.0 Z X
(mT)

5.0
A＝3.0mm
40
4.0 Standard Sensitivity(1.5mT）
Sensitivity(1 5mT） Y
磁束密

）
3.0 B＝4.0mm
2.0 Material: NEO47B
1.0 W3×0.5×4M
00
0.0
0 5 10 15
Z（ｍｍ）

L level H level
L level <-> H level
Magnetic field >2.2mT
>2 2mT M
Magnetic
ti field
fi ld < 0.8mT
08 T

15
 Simulation data by Neodymium Magnet
((Operating
p g magnetic
g field : 1.5mT typ.)
yp )

Z
G
Y X

L
1mm

H -> L
1.5 to 2.2mT 2.5mm

Z
L -> H G
0.8 to 1.2mT
X Y

3.5mm
Magnetizatio
n direction
AS-M15#A-R Unit Note
AMR sensor
Min. Typ. Max. Magnet size
Operating Mop - 1.5 2.2 mT Catalog value
magnetic field
MRP 0.8 1.2 -
Cautions)) For reference only
16
 Simulation data by Neodymium Magnet
((Operating
p g magnetic
g field : 1.5mT typ.)
yp )

Z
G
Y X

L 0.7mm

3.0mm
H -> L
1.5 to 2.2mT
Z
G
L -> H X
0.8 to 1.2mT Y
H

4.0mm

AS-M15#A-R Unit Note

AMR sensor
Min. Typ. Max. Magnet size
Operating Mop - 1.5 2.2 mT Catalog value
magnetic field
MRP 0.8 1.2 -
Cautions)) For reference only
17
Simulation data by Ferrite Magnet
((Operating
p g magnetic
g field : 1.5mT typ.)
yp )
Z
G
Y X

L
25mm
H -> L
1.5 to 2.2mT

10mm
L -> H
0.8 to 1.2mT
G
Z
H
X Y

AS-M15#A-R Unit Note

AMR sensor
Min. Typ. Max.
7mm
Operating Mop - 1.5 2.2 mT Catalog value
magnetic field
MRP 0.8 1.2 -
Magnet size
Cautions)) For reference only
18
Application example of Standard sensitivity
（Opening and closing detection）

Closing detection : Low level

Magnetic field to the sensor to be 2.2mT
or more.

Opening detection : High level

Magnetic field to the sensor to be 0.8mT
or less.
(Side view)

Detection area of AMR

Detection of magnetic field

(Top view)
19
Application example of Standard sensitivity
（Opening and closing detection）

Closing detection : Low level

Magnetic field to the sensor to be 2.2mT
or more.

Low level ↔ High level

Magnetic field to the sensor to be
1.5mT(typ.).

Opening detection : High level

Magnetic field to the sensor to be
0.8mT or less.

20
Benefit - Wide detection area

・More flexible for design

g ((Mount location))
- Our sensor has wide detection area

Detection area of AMR

(Side view) (Top view)

21
Part Numbering : AS series
P/N：AS－M 15 T A -R
1 2 3 4 5 6

1 ••• Product ID
2 ••• Type M：Magnetic switch
R：Rotational sensor
P：Rotational sensor ( Power down function )

3 ••• Sensitivity 05：0.5mT

05：0 5mT
15：1.5mT
30：3.0mT

4 ••• Package T : SOT23

N : SON4
X : XLP

5 ••• Supply voltage A : 1.6 to 3.5V

B : 3.6 to 6.0V

6 ••• Plastic
Pl i taping
i ¢180
¢180mm（3000pcs/reel）
（3000 / l）

22
 Evaluation board for AMR sensor
＜How to use Evaluation board＞
Inverter
LED light up when Magnet close to the sensor.

Direction of
magnetic field

Direction of sensitivity
LED
Magnet
AMR sensor
(P/N:AS-M15NA-R)
Connector: <S4B-PH-SM4> by JST Mfg. Co., Ltd
(* We don’t provide the connector.)

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Evaluation board for AMR sensor
＜circuit＞

Out1 Out2
3V 3V
R:
Vc=3V 330Ω

AMR
Gnd.
IC2:
LED:
Out2 IC1:
IC1 Inverter
AS-M15NA-R (TC7SZ04FU)
Out1

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