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• CZ is more common
method to grow
silicon crystal today
because it is capable
of producing large
diameter crystals,
from which large
diameter wafer can
be cut.
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Lecture # 4
1
Modern CZ Crystal Growth
CZ crystal growth (cont.)
• The raw Si used for crystal • Sequence of
growth is purified from SiO2 photographs and
(sand) through refining, fractional
distillation and CVD. drawings illustrating
CZ crystal growth.
• The raw material contains < 1 ppb The charge is
impurities except for O (» 1018 melted,
cm-3) and C (» 1016 cm-3) • the seed is
inserted, the neck
• Essentially all Si wafers used for region is grown at a
ICs today come from Czochralski
grown crystals. Polysilicon material high rate to remove
is melted, held at close to 1415 dislocations and
°C, and a single crystal seed is finally the growth is
used to start the crystal growth.
• slowed down to
• Pull rate, melt temperature and produce a uniform
rotation rate are all important crystal.
control parameters.
5 6
Wafer Slicing
2
Modeling Crystal Growth: relationship between pull
Drawback of the CZ method rate and crystal diameter.
• Freezing occurs between
isotherms X1 and X2.
• The only significant drawback
to the CZ method is that the
silicon is contained in liquid • Heat balance: latent heat of
form in a crucible during
growth and as a result, crystallization + heat conducted
impurities from the crucible from melt to crystal = heat
are incorporated. conducted away.
2πrdx=radiation surface
area of an incremental
Length. σ=Boltzman constant
A= Cross-sectional area
KS=thermal conductvity of the soild
11 12
3
Vpmax= maximum crystal pull rate is inversely proportional to the square root of the
crystal radius. 13 14
15 16
Lecture # 4
4
Doping concentration versus position along the grown CZ
crystal for common dopants in silicon.
• * More expensive.
5
Float Zone Growth Technique
• A seed crystal is brought into contact with
the top of the rod.
• In an inert atmosphere, an RF coil is slowly
passed along the length of the rod, starting
at seed contact.
• The field set up by the coil induces eddy
currents in the rod, leading to joule
heating, and so melts the rod in the vicinity
of the coil.
• The "floating" melt zone is about 2 cm
wide..
• The seed crystal touches the melt zone and
is pulled away, along with a solidifying Si
boule following the seed.
• The seed crystal determines the crystal
orientation of the boule.
• Limited to about a 4" wafer, as the melt
Float-zone process. (a) Schematic setup. (b) Simple model for zone will collapse.
• It is only held together by surface tension
doping evaluation. 21
(and RF levitation). 22
• * Thus, the impurities generally stay in the melt zone, and don't • Pill Doping:
solidify in the boule. • Drill a small hole in the top of the EGS rod, and insert the dopant.
• * You can "purify" FZ wafers further by successively passing the • * If the dopant has a small segregation coefficient, most of it will be
carried with the melt as it passes the length of the boule.
coil along the boule. The impurities then segregate towards the
end of the boule.
• * Resulting in only a small non-uniformity.
• Thermal instability in the melt zone can cause microvariations in • * Ga and In doping work well this way.
composition and doping.
6
Wafer Lapping and Etching Wafer Polishing and Cleaning
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