2SB727(K)

Silicon PNP Epitaxial

Application

Medium speed and power switching complementary pair with 2SD768(K)

Outline

TO-220AB

1
1. Base
2. Collector
(Flange)
1
2 3 3. Emitter 1 kΩ 400 Ω
(Typ) (Typ)
3

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit
Collector to base voltage VCBO –120 V
Collector to emitter voltage VCEO –120 V
Emitter to base voltage VEBO –7 V
Collector current IC –6 A
Collector peak current I C(peak) –10 A
1
Collector power dissipation PC * 40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
2SB727(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown V(BR)CEO –120 — — V I C = –25 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO –7 — — V I E = –50 mA, IC = 0
voltage
Collector cutoff current I CBO — — –100 µA VCB = –120 V, IE = 0
I CEO — — –10 µA VCE = –100 V, RBE = ∞
DC current transfer ratio hFE 1000 — 20000 VCE = –3 V, IC = –3 A*1
Collector to emitter saturation VCE(sat)1 — — –1.5 V I C = –3 A, IB = –6 mA*1
voltage VCE(sat)2 — — –3.0 V I C = –6 A, IB = –60 mA*1
Base to emitter saturation VBE(sat)1 — — –2.0 V I C = –3 A, IB = –6 mA*1
voltage VBE(sat)2 — — –3.5 V I C = –6 A, IB = –60 mA*1
Turn on time t on — 1.0 — µs I C = –3 A, IB1 = –IB2 = –6 mA
Turn off time t off — 3.0 — µs
Note: 1. Pulse test

Maximum Collector Dissipation Curve

Area of Safe Operation
60
–30 I
C (max) (Continuous)
Collector power dissipation Pc (W)

iC (peak) 1 µs
–10
10
Collector Current IC (A)

0µ
40 –3
s
PW
1 m= 10
s
DC = 25

–1.0
(T C
Op °C)

ms
era

20 –0.3
tio

Ta = 25°C
n

–0.1 1 Shot pulse

–0.03
0 50 100 150 –1 –3 –10 –30 –100 –300 –1,000
Case Temperature TC (°C) Collector to emitter Voltage VCE (V)

2
 2SB727(K)

DC Current Transfer Ratio vs.

Typical Output Characteristics Collector Current
–5 10,000
TC = 25°C

DC current transfer ratio hFE

–4
Collector Current IC (A)

–0.9 3,000 °C
–0.8 –0.7 75
=
–3 –0.6 TC °
25 5°
–0.5 –2
1,000
–0.4
–2 VCE = –3 V
–0.3

–0.2 300
–1

IB = –0.1 mA
100
0 –1 –2 –3 –4 –5 –0.1 –0.3 –1.0 –3 –10
Collector to emitter Voltage VCE (V) Collector current IC (A)

Saturation Voltage vs. Collector Current Switching Time vs. Collector Current
–10 10
Collector to emitter saturation voltage

Base to emitter saturation voltage

500

tstg
3
Switching time t (µs)

–3
VBE (sat) l C/l B = 200 1.0 tf
VCE (sat) (V)

VBE (sat) (V)

0
50

1,000
00
–1.0 l C/l B = 1,0 0.3
ton
200
VCE (sat) 0.1
–0.3 VCC = 30 V
TC = 25°C 0.03 ICC = 500 IB1 = –500 IB2
Ta = 25°C
–0.1 0.01
–0.1 –0.3 –1.0 –3 –10 –0.1 –0.3 –1.0 –3 –10
Collector current IC (mA) Collector current IC (mA)

3
2SB727(K)

Transient Thermal Resistance

10
1-1,000 s

Thermal resistance θj-c (°C/W)

3

1-1,000 ms
1.0

0.3
TC = 25°C
0.1

0.03

0.01
1 10 100 1,000 (s)

1 10 100 1,000 (ms)

Time t

4
 Unit: mm

11.5 MAX

10.16 ± 0.2 4.44 ± 0.2

2.79 ± 0.2

9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
8.0

–0.1
+0.2
6.4

15.0 ± 0.3
1.27
18.5 ± 0.5

2.7 MAX

1.5 MAX
14.0 ± 0.5
7.8 ± 0.5

0.76 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1

Hitachi Code TO-220AB

JEDEC Conforms
EIAJ Conforms
Weight (reference value) 1.8 g
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