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Reflexlichtschranke

Reflective Interrupter
Lead (Pb) Free Product - RoHS Compliant
SFH 9201

Wesentliche Merkmale Features


• Optimaler Arbeitsabstand 1 mm bis 5 mm • Optimal operating distance 1 mm to 5 mm
• IR-GaAs-Lumineszenzdiode in Kombination • IR-GaAs-emitter in combination with a Silicon
mit einem Si-NPN-Fototransistor NPN phototransistor
• Tageslichtsperrfilter • Daylight cut-off filter
• Geringe Sättigungsspannung • Low saturation voltage
• Sender und Empfänger galvanisch getrennt • Emitter and detector electrically isolated
• Lötmethode: IR-Reflow Löten • Soldering Methode: IR Reflow Soldering
• Vorbehandlung nach JEDEC Level 4 • Preconditioning acc. to JEDEC Level 4

Anwendungen Applications
• Positionsmelder • Position reporting
• Endabschaltung • End position switch
• Drehzahlüberwachung, -regelung • Speed monitoring and regulating
• Bewegungssensor • Motion transmitter

Typ Bestellnummer ICE [mA]


Type Ordering Code IF = 10 mA, VCE = 5 V, d = 1 mm
SFH 9201 Q65110A2708 0.25 … 2.00
SFH 9201-2/3 Q65110A2698 0.40 … 1.25
SFH 9201-3/4 Q65110A2716 0.63 … 2.00

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SFH 9201

Grenzwerte
Maximum Ratings
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit

Sender (GaAs-Diode)
Emitter (GaAs diode)
Sperrspannung VR 5 V
Reverse voltage
Vorwärtsgleichstrom IF 50 mA
Forward current
Verlustleistung Ptot 80 mW
Power dissipation

Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Dauer-Kollektor-Emitter-Sperrspannung VCE 16 V
Continuous collector-emitter voltage
Kollektor-Emitter-Sperrspannung, (t ≤ 2 min) VCE 30
Collector-emitter voltage, (t ≤ 2 min)
Emitter-Kollektor-Sperrspannung VEC 7
Emitter-collector voltage
Kollektorstrom IC 20 mA
Collector current
Verlustleistung Ptot 100 mW
Total power dissipation

Reflexlichtschranke
Light Reflection Switch
Lagertemperatur Tstg – 40 … + 100 °C
Storage temperature range
Umgebungstemperatur TA – 40 … + 100
Ambient temperature range
Verlustleistung Ptot 150 mW
Power dissipation
Elektrostatische Entladung ESD 2 KV
Electrostatic discharge
Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3)

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SFH 9201

Kennwerte (TA = 25 °C)


Characteristics
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit

Sender (IR-GaAs-Diode)
Emitter (IR-GaAs diode)
Durchlaβspannung VF 1.25 (≤ 1.65) V
Forward voltage
IF = 50 mA
Sperrstrom IR 0.01 (≤ 1) µA
Reverse current
VR = 5 V
Kapazität CO 25 pF
Capacitance
VR = 0 V, f = 1 MHz
Wärmewiderstand1) RthJA 270 K/W
Thermal resistance1)

Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Kapazität CCE 10 pF
Capacitance
VCE = 5 V, f = 1 MHz
Kollektor-Emitter-Reststrom ICEO 3 (≤ 200) nA
Collector-emitter leakage current
VCE = 20 V
Fotostrom (Fremdlichtempfindlichkeit) IP 3.5 mA
Photocurrent (outside light density)
VCE = 5 V, EV = 1000 Lx
Wärmewiderstand1) RthJA 270 K/W
Thermal resistance1)

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SFH 9201

Kennwerte (TA = 25 °C)


Characteristics (cont’d)
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit

Reflexlichtschranke
Light Reflection Switch
Kollektor-Emitterstrom ICE min. 0.25 mA
Collector-emitter current ICE typ. 0.70 mA
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; VCE = 5 V; d = 1 mm
Kollektor-Emitter-Sättigungsspannung VCE sat 0.15 (≤ 0.6) V
Collector-emitter-saturation voltage
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; d = 1 mm; IC = 85 µA
1)
Montage auf PC-Board mit > 5 mm2 Padgröβe
1)
Mounting on pcb with > 5 mm2 pad size

Reflector
with 90% reflexion
(Kodak neutral white
test card)

OHM02257

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Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ)


Switching Times

RL
ΙF VCC
ΙC
Output

OHM02258

Bezeichnung Symbol Wert Einheit


Parameter Symbol Value Unit
Einschaltzeit tein 65 µs
Turn-on time ton
Anstiegzeit tr 50 µs
Rise time
Ausschaltzeit taus 55 µs
Turn-off time toff
Abfallzeit tf 50 µs
Fall time
1)
IC eingestellt über den Durchlaβstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom
Bauteil (d)
1)
IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between
reflector and component (d)

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SFH 9201

Collector Current
IC - = f ( d )
--------- Permissible Power Dissipation for Switching Characteristics t = f (RL)
I Cmax Diode and Transistor Ptot = f (TA ) TA = 25 °C, IF = 10 mA
OHO02255 OHL00945 OHO00785
100 160 10 3
ΙC Total power dissipation
mW
Ι C max % Ptot t
µs Ι C = 100 µ A
80
120
t on
Detector
100 t off
60
Emitter
80 10 2
t on
t off
40 60
Ι C = 1 mA
40
20
Kodak neutral 20
white test card
Mirror
0 0 10 1 -1
0 20 40 60 80 ˚C 100 10 10 0 kΩ 10 1
0 1 2 3 4 mm 5
d TA RL

Max. Permissible Forward Current Transistor Capacitance (typ.) Collector Current IC = f (IF), spacing
IF = f (TA) CCE = f (VCE), TA = 25 °C, f = 1 MHz d to reflector = 1 mm, 90% reflection
OHL00986 OHO00374 OHO00783
120 50 3.0
mA
IF pF Ι C mA
100 C CE 40 2.5

35
80 2.0
30

60 25 1.5
20
40 1.0
15

10 VCE = 5 V
20 0.5
5

0 0 0
0 20 40 60 80 ˚C 100 10 -2 10 -1 10 0 10 1 V 10 2 0 4 8 12 16 mA 20
TA VCE ΙF

Forward Voltage (typ.) of the Relative Spectral Emission of Output Characteristics (typ.)
Diode VF = f (T) Emitter (GaAs) Irel = f (λ) and IC = f (VCE), spacing to reflector:
Detector (Si) Srel = f (λ) d = 1 mm, 90% reflection, TA = 25 °C
OHO02256 OHO00786 OHO00781
1.30 100 2.0
Ι rel Ι F = 25 mA
VF V S rel % Ι C mA
1.25
80 1.6
Ι F = 20 mA
Ι F = 20 mA 1.4
1.20
10 mA
60 1.2
5 mA Ι F = 15 mA
1.15 1.0
Detector
40 0.8 Ι F = 10 mA
1.10
0.6

20 0.4 Ι F = 5 mA
1.05
0.2
Emitter
1 0 0
-40 -20 0 20 40 60 C 100 700 800 900 1000 nm 1100 0.1 10 0 10 1 V
T λ VCE

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Perm. Pulse Handling Capability Perm. Pulse Handling Capability


IF = f (tp), Duty cycle D = parameter, IF = f (tp), Duty cycle D = parameter,
TA = 25 °C TA = 85 °C
OHF02623 OHF02622
104 104
tP tP
mA mA t
IF t IF IF
D = TP IF D = TP
T T

D= D=
103 0.005 103 0.005
0.01 0.01
0.02 0.02
0.05 0.05
0.2 0.1 0.1
0.2
0.5
102 102
1
0.5

101 -5 101 -5
10 10-4 10-3 10-2 10-1 100 101 s 102 10 10-4 10-3 10-2 10-1 100 101 s 102
tp tp

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SFH 9201

Maßzeichnung
Package Outlines

6.2 (0.244)
0.2 M A 4.2 (0.165)

0...0.1 (0...0.004)
5.8 (0.228) B
3.8 (0.150)

0.15 (0.006)
0.13 (0.005)
3.4 (0.134)
A

(0.05 (0.002) typ.)


3.0 (0.118)

(5˚)

2.1 (0.083)
1.7 (0.067)
Raster (spacing)
Raster (spacing)
Sender/Emitter

(0.1 (0.004) typ.)

2.54 (0.100)
1.27 (0.050)
(1.2 (0.047) typ.)

(0.4 (0.016) typ.)


0.5 (0.020)
0.3 (0.012)

1 6
2 5
3 4

Chip Positionen
Empfänger/Receiver
0.1 M B GPLY0504

Type 1 2 3 4 5 6
SFH 9201 Anode – Emitter Collector – Cathode

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

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SFH 9201

Empfohlenes Lötpaddesign IR-Reflow Löten


Recommended Solder Pad IR REflow Soldering

0.6 (0.024)
1.27 (0.050)
1.2 (0.047)

1.27 (0.050)

Padgeometrie
für verbesserte
Wärmeableitung
Paddesign
for improved
Heat dissipation

3.9 (0.154)
Cu-Fläche >5 mm 2
Cu-area >5 mm 2
Lötstopplack
Solder resist OHPY0030

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

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SFH 9201

Löthinweise
Soldering Conditions
Bauform Drypack Tauch-, Schwalllötung Reflowlötung Kolbenlötung
Type Level acc. Dip, Wave Soldering Reflow Soldering Iron Soldering
to Peak Temp. Max. Time in Peak Temp. Max. Time (Iron temp.)
IPS-stand. (solderbath) Peak Zone (package in Peak
020 temp.) Zone
SFH 9201 4 n. a. – 260 °C 20 sec. n.a.

Bitte Verarbeitungshinweise für SMT-Bauelemente beachten!


Please observe the handling guidelines for SMT devices!

Lötbedingungen Vorbehandlung nach JEDEC Level 4


Soldering Conditions Preconditioning acc. to JEDEC Level 4
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
I

OHLA0687
300
Maximum Solder Profile
˚C Recommended Solder Profile
Minimum Solder Profile 260 ˚C +0 ˚C
-5 ˚C
T 250 255 ˚C
245 ˚C ±5 ˚C
240 ˚C
235 ˚C +5 ˚C
-0 ˚C
217 ˚C
200 10 s min
30 s max

150 Ramp Down


6 K/s (max)
120 s max 100 s max
100

Ramp Up
50 3 K/s (max)
25 ˚C
0
0 50 100 150 200 250 s 300
t

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SFH 9201

Gurtung / Polarität und Lage siehe Dokument: Short Form Katalog: Gurtung und
Verpackung - SMT-Bauelemente - Gehäuse:SMT RLS

Methode of Taping / Polarity and Orientation see document: Short Form Catalog: Tape and Reel -
SMT-Components - Package: SMT-RLS

Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

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