MITSUBISHI <MOSFET MODULE>

FM400TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

FM400TU-07A

● ID(rms) .......................................................... 200A

● VDSS ............................................................... 75V
● InsulatedType
● 6-elements in a pack
● Thermistor inside
● UL Recognized
Yellow Card No.E80276
File No.E80271

APPLICATION
AC motor control of forklift (battery power source), UPS

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

110
6.5 97 ±0.25
15.2 70.9
16.5 16 32 16
36 36
10 10 35 ±1.0
30 30 26 ＋1.0
−0.5

7 7
6.5
(6)

(6)

P N
11.5
(14.5)
(17.5)

4
22.57
22.75

(15.8)
3 6.5
L A B E L

1 13
9.1

7
14
67 ±0.25
3.96
5-6.5

3
75

80

90
9.2

(8.7)
38

4-φ6.5
MOUNTING HOLES 12 6
(14.5)

(6)

U V W

14 14 14
7-M6NUTS 14
20 20 20
(SCREWING DEPTH)
16.5 32 32

A B

Tc measured point
25

Housing Type of A and B

4

(Tyco Electronics P/N:)

CIRCUIT DIAGRAM A: 917353-1
P B: 179838-1

(7)GUP (8)GVP (9)GWP

(1)SUP (2)SVP (3)SWP
U V W (13) (1)SUP (2)SVP (3)SWP (4)SUN (5)SVN (6)SWN
A
(10)GUN (11)GVN (12)GWN (7)GUP (8)GVP (9)GWP (10)GUN (11)GVN (12)GWN
(4)SUN (5)SVN (6)SWN (14)
(13)TH1 (14)TH2 B
N

May 2006
 MITSUBISHI <MOSFET MODULE>

FM400TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)

Symbol Item Conditions Ratings Unit
VDSS Drain-source voltage G-S Short 75 V
VGSS Gate-source voltage D-S Short ±20 V
ID TC’ = 139°C*3 200 A
Drain current
IDM Pulse*2 400 A
IDA Avalanche current L = 10µH Pulse*2 200 A
IS*1 TC = 25°C 200 A
Source current
ISM*1 Pulse*2 400 A
PD*4 TC = 25°C 650 W
Maximum power dissipation
PD*4 TC’ = 25°C*3 880 W
Tch Channel temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V
Main Terminal M6 3.5 ~ 4.5 N•m
— Mounting torque
Mounting M6 3.5 ~ 4.5 N•m
— Weight Typical value 600 g

ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)

Limits
Symbol Item Conditions Unit
Min. Typ. Max.
IDSS Drain cutoff current VDS = VDSS, VGS = 0V — — 1 mA
VGS(th) Gate-source threshold voltage ID = 20mA, VDS = 10V 4.7 6 7.3 V
IGSS Gate leakage current VGS = VGSS, VDS = 0V — — 1.5 µA
rDS(ON) Static drain-source ID = 200A Tch = 25°C — 0.8 1.1
mΩ
(chip) On-state resistance VGS = 15V Tch = 125°C — 1.28 —
VDS(ON) Static drain-source ID = 200A Tch = 25°C — 0.16 0.22
V
(chip) On-state voltage VGS = 15V Tch = 125°C — 0.26 —
ID = 200A Tch = 25°C — 0.8 —
R(lead) Lead resistance mΩ
terminal-chip Tch = 125°C — 1.12 —
Ciss Input capacitance — — 75
VDS = 10V
Coss Output capacitance — — 10 nF
VGS = 0V
Crss Reverse transfer capacitance — — 6
QG Total gate charge VDD = 48V, ID = 200A, VGS = 15V — 1100 — nC
td(on) Turn-on delay time — — 450
tr Turn-on rise time — — 500
VDD = 48V, ID = 200A, VGS1 = VGS2 = 15V ns
td(off) Turn-off delay time — — 450
RG = 6.3Ω, Inductive load switching operation
tf Turn-off fall time — — 400
IS = 200A
trr*1 Reverse recovery time — — 200 ns
Qrr*1 Reverse recovery charge — 4.5 — µC
VSD*1 Source-drain voltage IS = 200A, VGS = 0V — — 1.3 V
Rth(ch-c) MOSFET part (1/6 module)*7 — — 0.19
Thermal resistance
Rth(ch-c’) MOSFET part (1/6 module)*3 — — 0.142
°C/W
Rth(c-f) Case to fin, Thermal grease Applied*8 (1/6 module) — 0.1 —
Contact thermal resistance
Rth(c’-f’) Case to fin, Thermal grease Applied*3, *8 (1/6 module) — 0.09 —

THERMISTOR PART
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
RTH*6 Resistance TTH = 25°C*5 — 100 — kΩ
B*6 B Constant Resistance at TTH = 25°C, 50°C*5 — 4000 — K
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
*3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.

May 2006
 MITSUBISHI <MOSFET MODULE>

FM400TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS

(TYPICAL) Chip (TYPICAL) Chip
400 400
VGS = 20V 12V VDS = 10V
10V Tch = 25°C
350
15V
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

300 300

250
Tch = 125°C Tch = 25°C
200 200

150 9V

100 100

50

0 0
0 0.2 0.4 0.6 0.8 1.0 5 7 9 11 13 15

DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE ON-STATE GATE THRESHOLD

VOLTAGE VS. TEMPERATURE VOLTAGE VS. TEMPERATURE
(TYPICAL) Chip (TYPICAL)
2.0
GATE THRESHOLD VOLTAGE VGS(th) (V)

7
ON-STATE RESISTANCE rDS(ON) (mΩ)

ID = 200A
6
1.6
VGS = 12V 5 VDS = 10V
DRAIN-SOURCE

ID = 20mA
1.2 4
VGS = 15V

0.8 3

2
0.4
1

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE ON-STATE CAPACITANCE VS.

VOLTAGE VS. GATE BIAS DRAIN-SOURCE VOLTAGE
(TYPICAL) Chip (TYPICAL)
1.0 102
Tch = 25°C 7
ON-STATE VOLTAGE VDS(ON) (V)

5 Ciss
0.8
3
CAPACITANCE (nF)
DRAIN-SOURCE

2
0.6
101
0.4 7
ID = 400A 5

3 Coss
0.2 ID = 200A
2
VGS = 0V Crss
ID = 100A
0 100 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE VOLTAGE VDS (V)

May 2006
 MITSUBISHI <MOSFET MODULE>

FM400TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

FREE-WHEEL DIODE
GATE CHARGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL) Chip
20 103
ID = 200A 7 VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)

SOURCE CURRENT IS (A)

16
3
Tch = 125°C
VDD = 24V VDD = 48V 2
12
102
8 7 Tch = 25°C
5

3
4
2

0 101
0 200 400 600 800 1000 1200 1400 1600 0.5 0.6 0.7 0.8 0.9 1.0

GATE CHARGE QG (nC) SOURCE-DRAIN VOLTAGE VSD (V)

HALF-BRIDGE HALF-BRIDGE
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
103 104
7
7 5
5 td(on)
3
SWITCHING TIME (ns)
SWITCHING TIME (ns)

2
3 td(off) td(off)
2 103 tr
td(on) 7
5
102 3 tf
7 2
tr Conditions:
Conditions:
5 tf 102
VDD = 48V VDD = 48V
7
3 VGS = ±15V 5 VGS = ±15V
RG = 6.3Ω 3 ID = 200A
2
Tch = 125°C 2 Tch = 125°C
Inductive load Inductive load
101 1 101
10 2 3 5 7 102 2 3 5 7 103 0 10 20 30 40 50 60 70

DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω)

HALF-BRIDGE HALF-BRIDGE
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
101 102
7 7
5 5
3
SWITCHING LOSS (mJ/pulse)

SWITCHING LOSS (mJ/pulse)

3 2 Esw(on)
2 Esw(off) 101
7
100 5
7 Esw(on) 3 Esw(off)
5 2 Conditions:
3 100 VDD = 48V
Err 7
2 5 VGS = ±15V
Conditions: 3 ID = 200A
10–1 VDD = 48V 2
7 Tch = 125°C
5 VGS = ±15V 10–1 Inductive load
7
3
RG = 6.3Ω 5
2 Tch = 125°C 3 Err
Inductive load 2
10–2 1 10–2
10 2 3 5 7 102 2 3 5 7 103 0 10 20 30 40 50 60 70

DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω)

May 2006
 MITSUBISHI <MOSFET MODULE>

FM400TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

REVERSE RECOVERY CHARACTERISTICS TRANSIENT THERMAL

OF FREE-WHEEL DIODE IMPEDANCE CHARACTERISTICS
(TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
103 100
7 7

THERMAL IMPEDANCE Zth(ch-c)

5 5

NORMALIZED TRANSIENT
3 3
2 2
trr
102 10–1 10–1
Irr (A), trr (ns)

7 Irr 7 7
5 5 5
3 3 3
2 2 2
Conditions:
101 VDD = 48V 10–2 10–2
7 7 7
5 VGS = ±15V 5 5
3 RG = 6.3Ω 3
Single pulse 3
2 Tch = 25°C 2 Tch = 25°C 2
Inductive load Per unit base = Rth(ch-c) = 0.19°C/W
100 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

SOURCE CURRENT IS (A) TIME (s)

CHIP LAYOUT

(110)

(97)

90.8

57.8
24.8

P N
29.4
49.2

7 1 13
TrUP TrVP TrWP
14
(90)
(67)

(80)

TrUN TrVN TrWN

12 6 LABEL SIDE

U V W

25.4

58.4

91.4

May 2006