“Where working hard is a habit”

IIT ASHRAM
JEE MAIN || JEE ADVANCED || MEDICAL || FOUNDATION
UG–1 & 2, Concorde Complex, Above OBC Bank. R.C. Dutt Road., Alkapuri Baroda. Ph. 6625979, 9033034152
www. iitashram.com | Email:- Admin@iitashram.com

ASSIGNMENT PHYSICS CLASS - XII GSEB

TOPIC : ELECTRONIC DEVICES

SECTION - A
SINGLE CORRECT QUESTIONS [01 Mark Each]

1. In the depletion region of a p-n junction, there

(d) holes in the valence band move from lower
is ashortage of ……..
energy level to higher energy level.
(a) Acceptor ions
6. The reverse bias current ______ with the
(b) Holes and electrons increase of temperature.
(c) Donor ions (d)None of the above (a)decreases (b) increases
2. For a pure semiconductor the Fermi level is: (c) remains same (d) none of the above
(a) in the conduction band 7. Which one of the following represents forward
(b) near the centre of the gap between the bias diode?
valence and conduction bands
(c) in the valence band
(d )well below the valence band (a)
3. Hole is
(a). an anti-particle of electron (b)
(b). a vacancy created when an electron leaves
a covalent bond (c)
(c). absence of free electron
(d). an artificially created particle (d)
4. At room temperature relation between number 8. In an unbiased p-n junction, holes diffuse from
of holes and electrons in pure silicon crystal is p- region to n-region because
(a)ne>nh (b)ne<nh (a) free electrons in the n-region attract them.
(c)ne= nh (d)ne e” nh
(b) they move across the junction by the
5. When an electric field is applied across a potential difference.
semiconductor
(c) hole concentration in p-region is more as
(a) electrons move from lower energy level to compared to n-region.
higher energy level in the conduction band.
(d) all the above.
(b) electrons move from higher energy level to
lower energy level in the conduction band.
(c) holes in the valence band move from higher
energy level to lower energy level.

IIT ASHRAM UG–1 & 2, Concorde Complex, Above OBC Bank. R.C. Dutt Road., Alkapuri Baroda.
Page # 1
9. The I-V characteristics of an LED is (a) 0 (b) 3
(c) 4 (d) 5
15. For a transistor the parameter  = 99. The value
of the parameter  is
(a) 0.9 (b) 0.99
(c) 1 (d) 9
16. A common emitter amplifier is designed with
NPN transistor ( = 0.99). The input impedance
is 1 K and load is 10 K. The voltage gain will
be
(a) 9.9 (b) 99
(c) 990 (d) 9900
17. The symbol given in figure represents

E C
10. When semiconductor is heated its resistance
(a)Increases (b) Decreases B

(c)Remains constant (d) nothing is definite. (a) NPN transistor

11. The current obtain from simple filter less full (b) PNP transistor
wave rectifier is
(c) Forward biased PN junction diode
(a) Varying direct current
(d) Reverse biased NP junction diode
(b) Constant direct current
18. Given below are four logic gate symbol (figure).
(c) Half current Those for OR, NOR and NAND are respectively
(d) Eddy current
12. The symbol of photocell:

A y A y
(a) (b)
B B
(1) (2)
(c) (d) A y A y
B B
13. In the following diode circuit
(3) (4)

(a) 1, 4, 3 (b) 4, 1, 2
(c) 1, 3, 4 (d) 4, 2, 1
19. Which represents NAND gate

(a) (b)
(a) D1 and D2 are reverse biased
(b) D1 and D2 are forward biased
(c) (d)
(c) D1 is reverse biased and D2 is forward biased
20. Which of the following logic gate is an universal
(d) D2 is reverse biased and D1 is forward biased
gate
14. The diffused impurities with ______________
(a) OR (b) NOT
valance electrons are called acceptor atoms.
(c) AND (d) NOR

IIT ASHRAM UG–1 & 2, Concorde Complex, Above OBC Bank. R.C. Dutt Road., Alkapuri Baroda.
Page # 2
 SECTION - B
Short Answer type Question: [02 Marks Each]
1. In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the
output frequency of a full-wave rectifier for the same input frequency.
2. State the factor, which controls : (i) wavelength of light, and (ii) intensity of light emitted by an
LED.
3. Distinguish between a conductor, a semiconductor and an insulator on the basis of energyband
diagrams.
4. Write two characteristic features to distinguish between n-type and p-type semiconductors.
5. Write the main use of the (i) photo diode (ii) Zener diode
6. Give reason to explain why n and p regions of a Zener diode are heavily doped. Find the current
through the Zener diode in the circuit given below : (Zener breakdown voltage is 15 V)

7. Using suitable diagram, show How is forward biasing different from reverse biasing  in a p-n
junction diode?
8. What is the reason to operate photodiodes in reverse bias ? A p-n photodiode is fabricated from a
semiconductor with a band gap 2·8 Evcan it detect a wavelength of 6000nm? justfy.
9. The circuit shown in the figure contains two diodes each with a forward resistance of 50 ohm and
infinite backward resistance. Calculate the current in the 100ohmresistance?

10. Diode used in the figure has a constant voltages drop at 0.5V at all currents and a maximum power
rating of 100mW. What should be the value of the resistance R connected in series for maximum
current?

IIT ASHRAM UG–1 & 2, Concorde Complex, Above OBC Bank. R.C. Dutt Road., Alkapuri Baroda.
Page # 3
Long Answer type Question: [03 Marks Each]
1. With the help of a suitable diagram, explain the formation of depletion region in a p-n junction.How
does its width change when the junction is (i) forward biased, and (ii) reverse biased?
2. How is forward biasing different from reverse biasing in a p-n junction diode?
3. On the basis of energy band theory define valence band, conduction band and energy gap. For a
extrinsic semiconductor, indicate on the energy band diagram the donor and acceptor levels?
4. Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave
rectifier.
5. Why does the reverse current in pn-junction show a sudden increase at the critical voltage? Name
any semiconductor device which operates under the reverse bias in the breakdown. Draw its V-I
characteristics.
6. Distinguish between a conductor, an insulator and a semiconductor on the basis of energy band
diagrams.
7. What is p-n junction ? Explain briefly, with the help of suitable diagram, how a p-n junction is
formed. Define the term Potential barrier and depletion region
8. Identify the semiconductor diode whose I-V characteristics are as shown. Draw its symbol. De-
scribe briefly using necessary circuit diagram, three basic processes involved in the generation of
emf

9. Draw a labelled circuit diagram of a full-wave rectifier and briefly explain its workingprinciple.
10. (a) Write the important considerations which are to be taken into account while fabricating a p-n
junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap
of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its
action.
(b) Draw the V-I characteristics of an LED. State two advantages of LED lamps over
conventional incandescent lamps.

IIT ASHRAM UG–1 & 2, Concorde Complex, Above OBC Bank. R.C. Dutt Road., Alkapuri Baroda.
Page # 4
Long Answer Type Questions : [04 Mark Each]
1. The input resistance of a silicon transistor is 665 . It’s base current is changed by 15A which
results in change of collector current by 2 mA. This transistor is used as a common emitter amplifier
with a load resistance of 5 k. Calculate
(i) Current gain ‘ac’
(ii) Trans conductance ‘gm’
(iii) Voltage gain ‘Av’ of the amplifier
2. In the given circuit, the value of  is 100, VCC  24 V , R L  4 .7 k , R B  220 k 
(a) Find iB , VCE , VBE and VBC when iC  1 .5 mA . State whether the transistor is in operation or not.
(b) What happens if R L  500 , the rest of the data remaining the same.

iE
iC
iB
RL
RB
C +
VBC
VCC
B VCE –

VBE E
iE

3. Give the logical symbol and truth table for an OR gate. Explain with the help of a circuit, how is
this gate realised in practice?
4. Justify the output waveform (Y) of the AND gate for the following inputs A and B given in figure

t1 t2 t3 t4 t5 t6

A
Inputs
B

5. With the help of a labelled circuit diagram, explain how a NPN transistor can be used as an amplifier
in the common emitter configuration. Show the input and output waveform

IIT ASHRAM UG–1 & 2, Concorde Complex, Above OBC Bank. R.C. Dutt Road., Alkapuri Baroda.
Page # 5